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At least 37 records · Page 2

Worldwide Physics-Based Lifetime Prediction of c-Si Modules Due to Solder-Bond Failure

Lifetime prediction of the fielded c-Si solar modules due to location-specific weather conditions has been an important topic of photovoltaic research and the economic viability of solar energy. Data analytic techniques such as the performance ratio method, Statistical clear sky model, and Suns-Vmp methods quantify the degradation from measured data of a solar farm, however, the nonlinear time-dependence and correlated degradations make it difficult to use the empirical degradation rates for ultimate lifetime projection. In this article, we propose a complementary physics-based model to predict the solder bond failure caused by mechanical stress associated with the variations of the temperature. Integrating the worldwide weather information from NASA/NSRDB databases, the model predicts the location-specific output-power degradation and the lifetime of a module due to solder bond failure. The model parameters are calibrated against qualification tests involving thermal cycling of specific batches of modules from a specific technology/manufacturer. The results may be summarized as: 1) Modules installed at higher latitudes show a longer lifetime due to reduced damage accumulation. 2) The reduction of temperature fluctuation close to large bodies of water, such as seashores, increases solder bond lifetime significantly. 3) Relatively speaking, modules installed close to the Tropic of Cancer/Capricorn (23.5 degrees North/South) suffer from a higher solder bond damage and have a shorter lifetime, suggesting a conservative design. This model should serve as a building block of a comprehensive reliability framework that can predict the lifetime of a module that experiences simultaneous and correlated degradation mechanisms involving yellowing, corrosion, and potential-induced degradation.

14 SOLAR ENERGY↗

Lifetime measurements of excited states in 15 O

The CNO cycle is the main energy source in stars more massive than our Sun, it defines the energy production and the cycle time that lead to the lifetime of massive stars, and it is an important tool for the determination of the age of globular clusters. One of the largest uncertainties in the CNO chain of reactions comes from the uncertainty in the 14 N(p,γ) 15 O reaction rate. This uncertainty arises predominantly from the uncertainty in the lifetime of the subthreshold state in 15 O at E x = 6792 keV. Previous measurements of this state's lifetime are significantly discrepant. Here, we report on a new lifetime measurement of this state, as well as the excited states in 15 O at E x = 5181 keV and E x = 6172 keV, populated via the 14 N(p,γ) 15 O reaction at proton energies of E p = 1020 keV and E p = 1570 keV. Furthermore, the lifetimes have been determined with the Doppler-Shift Attenuation Method (DSAM) with three separate, nitrogen-implanted targets with Mo, Ta, and W backing. We obtained lifetimes from the weighted average of the three measurements, allowing us to account for systematic differences between the backing materials. For the 6792 keV state, we obtained a τ = 0.6 ± 0.4 fs. To provide cross-validation of our method, we measured the known lifetimes of the states at 5181 and 6172 keV to be τ = 7.5 ± 3.0 and τ = 0.7 ± 0.5 fs, respectively, in good agreement with previous measurements.

6 ≤ A ≤ 19↗

NIR fluorescence lifetime macroscopic imaging with a time-gated SPAD camera

The performance of SwissSPAD2 (SS2), a large scale, widefield time-gated CMOS SPAD imager developed for fluorescence lifetime imaging, has recently been described in the context of visible range and fluorescence lifetime imaging microscopy (FLIM) of dyes with lifetimes in the 2.5 – 4 ns range. Here, we explore its capabilities in the NIR regime relevant for small animal imaging, where its sensitivity is lower and typical NIR fluorescent dye lifetimes are much shorter (1 ns or less). We carry out this study in a simple macroscopic imaging setup based on a compact NIR picosecond pulsed laser, an engineered diffuser-based illumination optics, and NIR optimized imaging lens suitable for well-plate or small animal imaging. Because laser repetition rates can vary between models, but the synchronization signal frequency accepted by SS2 is fixed to 20 MHz, we first checked that a simple frequency-division scheme enables data recording for different laser repetition rates. Next, we acquired data using different time gate widths, including gates with duration longer than the laser period, and analyzed the resulting data using both standard nonlinear least-square fit (NLSF) and phasor analysis. We show that the fixed synchronization rate and large gate widths characterizing SS2 (10 ns and over) are not an obstacle to accurately extracting lifetime in the 1 ns range and to distinguishing between close lifetimes. As a result, SS2 and similar very large gated SPAD imagers appear as a versatile alternative to other widefield time-resolved detectors for NIR fluorescence lifetime imaging, including preclinical molecular applications.

FLIM↗

A new method for inferring city emissions and lifetimes of nitrogen oxides from high-resolution nitrogen dioxide observations: a model study

We present a new method to infer emissions and lifetimes of nitrogen oxides (NO x ) based on tropospheric nitrogen dioxide (NO 2 ) observations together with reanalysis wind fields for cities located in polluted backgrounds. Since the accuracy of the method is difficult to assess due to lack of “true values” that can be used as a benchmark, we apply the method to synthetic NO 2 observations derived from the NASA-Unified Weather Research and Forecasting (NU-WRF) model at a high horizontal spatial resolution of 4 km × 4 km for cities over the continental United States. We compare the inferred emissions and lifetimes with the values given by the NU-WRF model to evaluate the method. The method is applicable to 26 US cities. The derived results are generally in good agreement with the values given by the model, with the relative differences of 2 % ± 17 % (mean ± standard deviation) and 15 % ± 25 % for lifetimes and emissions, respectively. Our investigation suggests that the use of wind data prior to the satellite overpass time improves the performance of the method. The correlation coefficients between inferred and NU-WRF lifetimes increase from 0.56 to 0.79 and for emissions increase from 0.88 to 0.96 when comparing results based on wind fields sampled simultaneously with satellite observations and averaged over 9 h data prior to satellite observations, respectively. We estimate that uncertainties in NO x lifetime and emissions arising from the method are approximately 15 % and 20 %, respectively, for typical (US) cities. The total uncertainties reach up to 43% (lifetimes) and 45% (emissions) by considering the additional uncertainties associated with satellite NO 2 observations and wind data. We expect this new method to be applicable to NO 2 observations from the TROPOspheric Monitoring Instrument (TROPOMI) and geostationary satellites, such as Geostationary Environment Monitoring Spectrometer (GEMS) or the Tropospheric Emissions: Monitoring Pollution (TEMPO) instrument, to estimate urban NO x emissions and lifetimes globally.

54 ENVIRONMENTAL SCIENCES↗

Radiative lifetime-encoded unicolour security tags using perovskite nanocrystals

Traditional fluorescence-based tags, used for anticounterfeiting, rely on primitive pattern matching and visual identification; additional covert security features such as fluorescent lifetime or pattern masking are advantageous if fraud is to be deterred. Herein, we present an electrohydrodynamically printed unicolour multi-fluorescent-lifetime security tag system composed of lifetime-tunable lead-halide perovskite nanocrystals that can be deciphered with both existing time-correlated single-photon counting fluorescence-lifetime imaging microscopy and a novel time-of-flight prototype. We find that unicolour or matching emission wavelength materials can be prepared through cation-engineering with the partial substitution of formamidinium for ethylenediammonium to generate “hollow” formamidinium lead bromide perovskite nanocrystals; these materials can be successfully printed into fluorescence-lifetime-encoded-quick-read tags that are protected from conventional readers. Furthermore, we also demonstrate that a portable, cost-effective time-of-flight fluorescence-lifetime imaging prototype can also decipher these codes. A single comprehensive approach combining these innovations may be eventually deployed to protect both producers and consumers.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

High Carrier Lifetimes in Epitaxial Germanium-Tin/Al(In)As Heterostructures with Variable Tin Compositions

Group IV-based germanium-tin (Ge1-ySny) compositional materials have recently shown great promise for infrared detection, light emission and ultra-low power transistors. High carrier lifetimes are desirable for enhancing the detection limit and efficiency of photodetectors, low threshold current density in lasers, and low tunneling barrier height by lowering defects and dislocations at the heterointerface of a source and a channel. Here, carrier lifetimes in epitaxial germanium (Ge) and variable tin (Sn) compositional Ge1-ySny materials were experimentally determined on GaAs substrates using the contactless microwave photoconductive decay (u-PCD) technique at an excitation wavelength of 1500 nm. Sharp (2 x 2) reflection high energy electron diffraction patterns and low surface roughness were observed from the surface of the Ge0.97Sn0.03 epilayer. X-ray rocking curves from Ge0.97Sn0.03 and Ge0.94Sn0.06 layers demonstrated the pseudomorphic and lattice-matched growth on AlAs and In0.12Al0.88As buffers, respectively, further substantiated by reciprocal space maps and abrupt heterointerfaces evident from the presence of Pendellosung oscillations. High effective carrier lifetimes of 150 ns to 450 ns were measured for Ge1-ySny epilayers as a function of Sn composition, surface roughness, growth temperature, and layer thickness. The observed increase in the carrier lifetime with an increasing Ge layer thickness and a reducing surface roughness, by incorporating Sn, were explained. The enhancement of the carrier lifetime with an increasing Sn concentration was achieved by controlling the defects with lattice-matched Ge0.94Sn0.06/In0.12Al0.88As heterointerfaces or the pseudomorphic growth of Ge0.94Sn0.06 on GaAs. Therefore, our monolithic integration of variable Sn alloy compositional Ge1-ySny materials with high carrier lifetimes opens avenues to realize electronic and optoelectronic devices.

carrier lifetimes↗

Defect-Limited Carrier Lifetime in Epitaxially Strained Germanium-On-Silicon Heterostructures

Epitaxially strained germanium-on-silicon (Ge-on-Si) heterostructures are central to next-generation photonic and electronic devices, yet their performance remains strongly constrained by defect-limited carrier lifetimes. In this work, we investigate the impact of defects on the carrier lifetime in relaxed Ge-on-Si and strained Ge-on-Si heterostructures. High-resolution X-ray diffraction quantifies the strain-state in Ge and reveals signatures of strain relaxation due to lattice mismatch. Cross-sectional and plan-view transmission electron microscopy analyses enable direct visualization of interfacial defects and quantification of threading dislocation densities (TDDs) within the Ge layer. However, the presence of a dense misfit dislocation network obscures the threading dislocation signatures, preventing reliable TDD determination by plan-view transmission electron microscopy in strained-Ge (..epsilon..-Ge). To assess the defect density in this case, etch-pit density measurements were performed, providing an alternative means of quantifying the TDDs in the ..epsilon..-Ge layer. Carrier lifetime measurements by microwave-reflection photoconductive decay reveal a clear relationship with TDDs ranging from 5 x 103 cm-2 to 2 x 1010 cm-2, confirming Shockley-Read-Hall recombination as the limiting mechanism at lower defect densities, with TDD-dominated recombination at higher defect densities. The Ge-on-Si relaxed heterostructure exhibited lifetimes much lower (~12 ns) than the lattice-matched Ge on gallium arsenide (GaAs) (~158 ns) heterostructure. Introducing controlled tensile strain reduces defect formation, suppresses strain-relaxation pathways, and leads to measurable improvements in minority carrier lifetime from 12 ns to 171 ns. These results establish a direct relation between defect suppression and carrier recombination dynamics in both relaxed Ge-on-Si grown directly on Si and strained Ge-on-Si heterostructures incorporating compound-semiconductor buffer layers, offering a materials-driven pathway for engineering Ge with improved carrier lifetime for photonic applications.

36 MATERIALS SCIENCE↗

Lifetime fatigue response due to wake steering on a pair of utility-scale wind turbines

Quantifying the impacts on turbine loads during wind farm control is an important consideration in assessing power production benefits. Wake steering controls aim to improve total wind farm performance by coordinating the control actions of individual turbines, wherein an upstream turbine is intentionally yawed at an offset angle from the measured wind direction. Consequently, this redirects its wake for improved power production and potentially reduces fatigue loads of the downstream turbines. This paper studies the lifetime fatigue loads associated with wake steering by using utility-scale wind turbine experimental data to conduct an analysis on a pair of wind turbines. This study was part of a large field experiment in which a group of five GE 1.5-MW SLE CWE turbines were selected as targets for conducting wake steering research. A standard loads instrumentation package and data acquisition system were installed on two turbines within the cluster to measure turbine fundamental loads. The time-series databases were used to calculate loads statistics as well as short-term and lifetime damage equivalent loads. Fatigue calculations followed the guidance in Annex H of the International Electrotechnical Commission standard 61400-1, Edition 4. Lifetime fatigue calculation results are presented in this analysis; three methods of assessing lifetime fatigue were used to determine percent difference for blade root moments, main shaft moments, main shaft torque, and tower top torque. For all three fatigue treatments, some components’ lifetime fatigue increases for the controlled turbine; however, the downwind turbine experienced a reduction in lifetime fatigue and combined effect for the turbine pair results in a reduction of fatigue when wake steering controls are applied.

17 WIND ENERGY↗

Lifetime of actin-dependent protein nanoclusters

Protein nanoclusters (PNCs) are dynamic collections of a few proteins that spatially organize in nanometer-length clusters. PNCs are one of the principal forms of spatial organization of membrane proteins, and they have been shown or hypothesized to be important in various cellular processes, including cell signaling. PNCs show remarkable diversity in size, shape, and lifetime. In particular, the lifetime of PNCs can vary over a wide range of timescales. The diversity in size and shape can be explained by the interaction of the clustering proteins with the actin cytoskeleton or the lipid membrane, but very little is known about the processes that determine the lifetime of the nanoclusters. In this paper, using mathematical modeling of the cluster dynamics, we model the biophysical processes that determine the lifetime of actin-dependent PNCs. In particular, we investigated the role of actin aster fragmentation, which had been suggested to be a key determinant of the PNC lifetime, and we found that it is important only for a small class of PNCs. A simple extension of our model allowed us to investigate the kinetics of protein-ligand interaction near PNCs. We found an anomalous increase in the lifetime of ligands near PNCs, which agrees remarkably well with experimental data on RAS-RAF kinetics. In particular, analysis of the RAS-RAF data through our model provides falsifiable predictions and novel hypotheses that will not only shed light on the role of RAS-RAF kinetics in various cancers, but also will be useful in studying membrane protein clustering in general.

59 BASIC BIOLOGICAL SCIENCES↗

Non-monotonic size-dependent exciton radiative lifetime in CsPbBr3 nanocrystals

Lead halide perovskite nanocrystals have attracted intense interest due to their desirable optical properties, diverse structural features, and size-tunable excitonic structure. Here we show that, under ambient conditions, a non-monotonic trend in radiative lifetime emerges from the interplay of size, lattice symmetry and excitonic structure. Small nanocrystals exhibit long radiative lifetimes due to weakly emissive excitons, but the oscillator strength increases and shortens the lifetime for nanocrystals approaching intermediate confinement. For larger nanocrystals with higher exciton density of states (DOS), the radiative lifetime is lengthened due to depopulation of the bright exciton manifold into thermally accessible dim states. A size-dependent structural symmetry lowering transition from cubic to orthorhombic is observed by XRD and MD simulations, and the non-monotonic radiative lifetime trend emerges only in lower symmetry structures with an increased dim exciton DOS. These findings shed light on the impact of nanocrystal size and structure on radiative lifetime and pave the way for tailored optical materials in various optical applications.

optical materials↗

GeSn-on-GaAs with photoconductive carrier lifetime >400 ns: role of substrate orientation and atomistic simulation

Group IV GeSn quantum material finds application in electronics and silicon-compatible photonics. Synthesizing these materials with low defect density and high carrier lifetime is a potential challenge due to lattice mismatch induced defects and tin segregation at higher growth temperature. Recent advancements in the growth of these GeSn materials on Si, Ge, GaAs, and with substrate orientations, demonstrated different properties using epitaxial and chemical deposition methods. This article addresses the effect of GaAs substrate orientation and misorientation on the materials’ properties and carrier lifetimes in epitaxial Ge 0.94 Sn 0.06 layers. With starting GaAs substrates of (100)/2°, (100)/6°, (110) and (111)A orientations, Ge 0.94 Sn 0.06 epitaxial layers were grown with an intermediate Ge buffer layer by molecular beam epitaxy and analyzed by several analytical tools. X-ray analysis displayed good crystalline quality, and Raman spectroscopy measurements showed blue shifts in phonon wavenumber due to biaxial compressive strain in Ge 0.94 Sn 0.06 epilayers. Cross-sectional transmission electron microscopy analysis confirmed the defect-free heterointerface of Ge 0.94 Sn 0.06 /Ge/GaAs heterostructure. Minority carrier lifetimes of the unintentionally doped n-type Ge 0.94 Sn 0.06 epilayers displayed photoconductive carrier lifetimes of >400 ns on (100)/6°, 319 ns on (100)/2°, and 434 ns on (110) GaAs substrate at 1500 nm excitation wavelength. On the other hand, Ge 0.94 Sn 0.06 layer showed poor carrier lifetime on (111)A GaAs substrate. The observed differences in carrier lifetimes were correlated with the formation energy of the Ge on (100)/6° and (100)/2° GaAs heterointerface using Stillinger–Weber interatomic potential model-based atomistic simulation with different heterointerfacial bonding by Synopsys QuantumATK tool. Total energy computation of 6280-atom Ge/GaAs supercell on (100)/6° leads to lower formation energy than (100)/2°, making it more thermodynamically stable. Hence, the growth of the GeSn/III–V material system using misoriented (100) substrates that are more thermodynamically stable will enhance the performances of optoelectronic devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Simple new methods for deducing lifetimes in recoil distance Doppler-shift measurements

In this work, new approaches for lifetime determination using data from recoil distance Doppler-shift experiments are presented based on the fundamental properties of the functions describing the time evolution of the population of excited nuclear states. To some extent, one of them represents a contraction of the well-known Differential decay-curve method (DDCM) by using the most reliable data point [the maximum of the $n_i(t)$ function describing the population of level $\textit{i}$ in time] and a purely numerical procedure avoiding any fitting of decay curves. The combination with the standard DDCM analysis is promising for improving the reliability and the precision of the results for the lifetimes obtained. The novel part of the approach consists of using a chain of equations at the consecutive maxima of the ni(t) functions, which allow us to precisely determine the ratio of the lifetimes of two consecutive levels and, in the case where one of these lifetimes is known, to determine the unknown one. In addition, a simple integral derivation of the lifetime is presented involving the peak areas measured at different distances, and an application of the first moments (expectation values and centroids in time) of the $n_i(t)$ functions for determining lifetimes is also demonstrated to be useful.

47 OTHER INSTRUMENTATION↗

Utility of Shockley–Read–Hall analysis to extract defect properties from semiconductor minority carrier lifetime data

The semiconductor minority carrier lifetime contains information about several important material properties, including Shockley–Read–Hall defect levels/concentrations and radiative/Auger recombination rates, and the complex relationships between these parameters produce a non-trivial temperature-dependence of the measured lifetime. It is tempting to fit temperature-dependent lifetime data to extract the properties of the Shockley–Read–Hall recombination centers; however, without a priori knowledge of the distribution of the Shockley–Read–Hall states across the bandgap, this fit problem is under-constrained in most circumstances. Shockley–Read–Hall lifetime data are not well-suited for the extraction of Shockley–Read–Hall defect levels but can be used effectively to extract minority carrier recombination lifetimes. The minority carrier recombination lifetime is observed at temperatures below 100 K in a Si-doped n-type InGaAs/InAsSb superlattice, and deviation from its expected temperature-dependence indicates that the capture cross section of the defect associated with Si-doping has an activation energy of 1.5 meV or a characteristic temperature of 17 K. This lower temperature regime is also preferrable for the analysis of the physics of defect introduction with displacement-damage-generating particle irradiation.

Physics↗

Analytic rate theory of polariton relaxation that explains long polariton lifetime

Hybridization of a molecular exciton with a quantized photon creates a polariton. Despite extensive experimental investigations, the apparent lifetime of the exciton–polariton is not well-understood. For this work, we examined the steady-state population dynamics for a Holstein–Tavis–Cumming Hamiltonian to illuminate the long-term polaritonic dynamics and lifetime of the exciton–polariton in an optical cavity. For a realistic description of polariton relaxation, cavity loss and various exciton decay channels are included in the model. We found that in the presence of weak but finite exciton loss, the apparent lifetime of the lower polariton coincides with the out-of-cavity exciton lifetime and is independent of cavity-matter detuning. This is a simple explanation for the experimentally observed lifetimes for exciton polaritons and theoretically justifies the dark state reservoir hypothesis. Furthermore, if the upper polariton is initially populated, the system reaches the steady state very quickly, leading to single-exponential polariton relaxation. Starting from the lower polariton leads to a longer pre-steady-state time period, leading to double-exponential relaxation. Finally, we considered the effect of site orientational disorders and the exciton frequency disorderers. Under the collective limit, the effects of this disorder can be included in Fermi’s golden rule population dynamics without explicit sampling. For the exciton energy disorders, numerical calculations are needed. Our theoretical framework is applicable to interpret exciton–polariton experiments, especially related to the measured apparent lifetime of polaritons.

Chemical dynamics↗

On the relation between active-region lifetimes and the autocorrelation function of light curves

ABSTRACT Rotational modulation of stellar light curves due to dark spots encloses information on spot properties and, thus, on magnetic activity. In particular, the decay of the autocorrelation function (ACF) of light curves is presumed to be linked to spot/active-region lifetimes, given that some coherence of the signal is expected throughout their lifetime. In the literature, an exponential decay has been adopted to describe the ACF. Here, we investigate the relation between the ACF and the active-region lifetimes. For this purpose, we produce artificial light curves of rotating spotted stars with different observation, stellar, and spot properties. We find that a linear decay and respective time-scale better represent the ACF than the exponential decay. We therefore adopt a linear decay. The spot/active-region time-scale inferred from the ACF is strongly restricted by the observation length of the light curves. For 1-yr light curves our results are consistent with no correlation between the inferred and the input time-scales. The ACF decay is also significantly affected by differential rotation and spot evolution: strong differential rotation and fast spot evolution contribute to a more severe underestimation of the active-region lifetimes. Nevertheless, in both circumstances the observed time-scale is still correlated with the input lifetimes. Therefore, our analysis suggests that the ACF decay can be used to obtain a lower limit of the active-region lifetimes for relatively long-term observations. However, strategies to avoid or flag targets with fast active-region evolution or displaying stable beating patterns associated with differential rotation should be employed.

Santos, A. R. G. (ORCID:0000000171956542)↗

Understanding Environmental Barrier Coating Lifetimes and Performance for Industrial Gas Turbines

Hydrogen or hydrogen blend fuels are expected to replace natural gas in land-based industrial gas turbines (IGTs) to support a greener power economy. Silicon carbide (SiC) base ceramic matrix composites (CMCs) are considered for replacement of Ni-based superalloys to facilitate future efficiency improvements. SiC CMCs require environmental barrier coatings (EBCs) to mitigate volatilization from high-temperature steam, thus making the EBC lifetime critical information for identifying CMC component lifetimes. Here, the goal of this project is to determine the maximum bond coating temperature underneath the EBC for achieving an IGT component lifetime goal of 25,000 h, which is far greater than current CMC component lifetime requirements for aeroturbine applications. To provide data for the lifetime model, laboratory testing used atmospheric plasma-sprayed rare-earth silicate EBCs on monolithic SiC substrates with an intermediate Si bond coating. Specimens exposed to 1-h thermal cycles in flowing air–steam environments and reaction kinetics were assessed from 700 °C to 1350 °C by measuring the thickness of the thermally grown silica scales. The silica growth and phase transformation appear critical in predicting EBC lifetime and several strategies have been explored to reduce the oxide growth rate and improve EBC durability at elevated temperatures. Advanced characterization using Raman spectroscopy has helped clarify this system.

08 HYDROGEN↗

Understanding EBC Lifetimes and Performance for Industrial Gas Turbines

Hydrogen or hydrogen blend fuels are expected to replace natural gas in land-based industrial gas turbines (IGTs) to support a greener power economy. Silicon carbide (SiC) base ceramic matrix composites (CMCs) are considered for replacement of Ni-based superalloys to facilitate future efficiency improvements. SiC CMCs require environmental barrier coatings (EBCs) to mitigate volatilization from high-temperature steam, thus making the EBC lifetime critical information for identifying CMC component lifetimes. The goal of this project is to determine the maximum bond coating temperature underneath the EBC for achieving an IGT component lifetime goal of 25,000 h, which is far greater than current CMC component lifetime requirements for aero-turbine applications. To provide data for the lifetime model, laboratory testing used plasma-sprayed rare-earth silicate EBCs on monolithic SiC substrates with an intermediate Si bond coating. Specimens exposed to 1-h thermal cycles in flowing air-steam environments and reaction kinetics were assessed from 700°-1350°C by measuring the thickness of the thermally grown silica scales. The silica growth and phase transformation appear critical in predicting EBC lifetime and several strategies have been explored to reduce the oxide growth rate and improve EBC durability at elevated temperatures. Advanced characterization using Raman spectroscopy has helped clarify this system.

Ridley, Mackenzie↗

Preliminary Environmental and Financial Viability Analysis of Circular Economy Scenarios for Satisfying PV System Service Lifetime

PV deployment has grown rapidly in recent decades, and this growth is expected to continue. At the same time, the rapid increase in PV panel efficiencies offers the opportunity to repower/revamp existing installations - replacing operational, lower-efficiency panels before the end of their 30-year service lifetime with newer, higher-efficiency panels. As a result, an increasing volume of PV panels could be decommissioned well before reaching the end of their 30-year service lifetime. Two broad strategies can be applied to manage the expected increase in decommissioned PV panels: (i) recycle prematurely decommissioned panels, and (ii) prevent recycling of these panels by satisfying the typical service lifetime of 30 years through circular economy strategies such as repair and reuse. Each strategy presents an environmental and economic trade-off. Retaining and satisfying the lifetime of the older, lower-efficiency panels avoids environmental burdens from recycling or landfilling but incurs burdens from additional repair and forgoing the opportunity to install newer panels with greater electricity-generation capabilities. This study assesses whether satisfying the expected service lifetime of a PV system through circular economy scenarios generates a greater environmental and financial benefit than recycling used panels and installing newer panels with higher efficiencies. The circular economy scenarios include repair and reuse of the PV system. Specifically, the study determines whether it is better for the environment to keep a PV panel in use for its 30-year service life after accounting for potential repair and additional transportation, or to replace older panels with more efficient new ones. In addition, we explore whether satisfying the service lifetime of PV panels proves competitive with the recycling route from a financial perspective.

14 SOLAR ENERGY↗