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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Spin-orbit torque induced magnetization switching in Ta/Co{sub 20}Fe{sub 60}B{sub 20}/MgO structures under small in-plane magnetic fields

Spin-orbit torque (SOT)-induced magnetization switching under small in-plane magnetic fields in as-deposited and annealed Ta/CoFeB/MgO structures is studied. For the as-deposited samples, partial SOT-induced switching behavior is observed under an in-plane field of less than 100 Oe. Conversely, for the annealed samples, an in-plane field of 10 Oe is large enough to achieve full deterministic magnetization switching. The Dzyaloshinskii-Moriya interaction at the Ta/CoFeB interface is believed to be the main reason for the discrepancy of the requisite in-plane magnetic fields for switching in the as-deposited and annealed samples. In addition, asymmetric field dependence behavior of SOT-induced magnetization switching is observed in the annealed samples. Deterministic magnetization switching in the absence of an external magnetic field is obtained in the annealed samples, which is extremely important to develop SOT-based magnetoresistive random access memory.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Effect of biquadratic coupling on current induced magnetization switching in Co/Cu/Ni-Fe nanopillar

The effect of biquadratic coupling on spin current induced magnetization switching in a Co/Cu/Ni-Fe nanopillar device is investigated by solving the free layer magnetization switching dynamics governed by the Landau-Lifshitz-Gilbert-Slonczewski (LLGS) equation. The LLGS equation is numerically solved by using Runge-Kutta fourth order procedure for an applied current density of 5 × 10{sup 12} Am{sup -2}. Presence of biquadratic coupling in the ferromagnetic layers reduces the magnetization switching time of the nanopillar device from 61 ps to 49 ps.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2020

Giant orbital magnetoelectric effect and current-induced magnetization switching in twisted bilayer graphene

Recently, quantum anomalous Hall effect with spontaneous ferromagnetism was observed in twisted bilayer graphenes (TBG) near 3/4 filling. Importantly, it was observed that an extremely small current can switch the direction of the magnetization. This offers the prospect of realizing low energy dissipation magnetic memories. However, the mechanism of the current-driven magnetization switching is poorly understood as the charge currents in graphenes are generally believed to be non-magnetic. In this work, we demonstrate that in TBG, the twisting and substrate induced symmetry breaking allow an out of plane orbital magnetization to be generated by a charge current. Moreover, the large Berry curvatures of the flat bands give the Bloch electrons large orbital magnetic moments so that a small current can generate a large orbital magnetization. We further demonstrate how the charge current can switch the magnetization of the ferromagnetic TBG near 3/4 filling as observed in the experiments.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Current induced magnetization switching in Co/Cu/Ni-Fe nanopillar with orange peel coupling

The impact of orange peel coupling on spin current induced magnetization switching in a Co/Cu/Ni-Fe nanopillar device is investigated by solving the switching dynamics of magnetization of the free layer governed by the Landau-Lifshitz-Gilbert-Slonczewski (LLGS) equation. The value of the critical current required to initiate the magnetization switching is calculated analytically by solving the LLGS equation and verified the same through numerical analysis. Results of numerical simulation of the LLGS equation using Runge-Kutta fourth order procedure shows that the presence of orange peel coupling between the spacer and the ferromagnetic layers reduces the switching time of the nanopillar device from 67 ps to 48 ps for an applied current density of 4 × 10{sup 12}Am{sup −2}. Also, the presence of orange peel coupling reduces the critical current required to initiate switching, and in this case, from 1.65 × 10{sup 12}Am{sup −2} to 1.39 × 10{sup 12}Am{sup −2}.

36 MATERIALS SCIENCE↗
DOE OSTI2022

High‐Efficiency Magnon‐Mediated Magnetization Switching in All‐Oxide Heterostructures with Perpendicular Magnetic Anisotropy

Abstract The search for efficient approaches to realize local switching of magnetic moments in spintronic devices has attracted extensive attention. One of the most promising approaches is the electrical manipulation of magnetization through electron‐mediated spin torque. However, the Joule heat generated via electron motion unavoidably causes substantial energy dissipation and potential damage to spintronic devices. Here, all‐oxide heterostructures of SrRuO 3 /NiO/SrIrO 3 are epitaxially grown on SrTiO 3 single‐crystal substrates following the order of the ferromagnetic transition metal oxide SrRuO 3 with perpendicular magnetic anisotropy, insulating and antiferromagnetic NiO, and metallic transition metal oxide SrIrO 3 with strong spin–orbit coupling. It is demonstrated that instead of the electron spin torques, the magnon torques present in the antiferromagnetic NiO layer can directly manipulate the perpendicular magnetization of the ferromagnetic layer. This magnon mechanism may significantly reduce the electron motion‐related energy dissipation from electron‐mediated spin currents. Interestingly, the threshold current density to generate a sufficient magnon current to manipulate the magnetization is one order of magnitude smaller than that in conventional metallic systems. These findings suggest a route for developing highly efficient all‐oxide spintronic devices operated by magnon current.

Zheng, Dongxing↗
DOE OSTI2019

Field-free Magnetization Switching by Utilizing the Spin Hall Effect and Interlayer Exchange Coupling of Iridium

Magnetization switching by spin-orbit torque (SOT) via spin Hall effect represents as a competitive alternative to that by spin-transfer torque (STT) used for magnetoresistive random access memory (MRAM), as it doesn’t require high-density current to go through the tunnel junction. For perpendicular MRAM, however, SOT driven switching of the free layer requires an external in-plane field, which poses limitation for viability in practical applications. Here we demonstrate field-free magnetization switching of a perpendicular magnet by utilizing an Iridium (Ir) layer. The Ir layer not only provides SOTs via spin Hall effect, but also induce interlayer exchange coupling with an in-plane magnetic layer that eliminates the need for the external field. Such dual functions of the Ir layer allows future build-up of magnetoresistive stacks for memory and logic applications. Experimental observations show that the SOT driven field-free magnetization reversal is characterized as domain nucleation and expansion. Micromagnetic modeling is carried out to provide in-depth understanding of the perpendicular magnetization reversal process in the presence of an in-plane exchange coupling field.

Science & Technology - Other Topics↗
DOE OSTI2014

Modelling current-induced magnetization switching in Heusler alloy Co{sub 2}FeAl-based spin-valve nanopillar

We investigated the current-induced magnetization switching in a Heusler alloy Co{sub 2}FeAl-based spin-valve nanopillar by using micromagnetic simulations. We demonstrated that the elimination of the intermediate state is originally resulted from the decease of effective magnetic anisotropy constant. The magnetization switching can be achieved at a small current density of 1.0 × 10{sup 4} A/cm{sup 2} by increasing the demagnetization factors of x and y axes. Based on our simulation, we found magnetic anisotropy and demagnetization energies have different contributions to the magnetization switching.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

On the size-dependent magnetism and all-optical magnetization switching of transition-metal silicide nanostructures

Theoretical investigations of the electronic structure, synthesis, and all-optical magnetization switching of transition-metal silicide nanostructures are reported. The magnetic moment of the nanostructures is studied as a function of the silicide cluster size and configuration. The experimentally demonstrated magnetization switching of nanostructured nickel silicide by circularly polarized light makes it possible to create high-speed storage devices with high density data recording.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Pulsed Field-Induced Magnetization Switching in Antiferromagnetic Ferrihydrite Nanoparticles

The dynamic magnetization switching of ferrihydrite nanoparticles has been investigated by a pulsed magnetometer technique in maximum fields H{sub max} of up to 130 kOe with pulse lengths of 4, 8, and 16 ms. Ferrihydrite exhibits antiferromagnetic ordering and defects cause the uncompensated magnetic moment in nanoparticles; therefore, the behavior typical of magnetic nanoparticles is observed. The dynamic hysteresis loops measured under the above-mentioned conditions show that the use of pulsed fields significantly broadens the temperature region of existence of the magnetic hysteresis and the coercivity can be governed by varying the maximum field and pulse length. This behavior is resulted from the relaxation effects typical of conventional ferro- and ferrimagnetic nanoparticles and the features typical of antiferromagnetic nanoparticles.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Spin-orbit torque-driven magnetization switching and thermal effects studied in Ta\CoFeB\MgO nanowires

We demonstrate magnetization switching in out-of-plane magnetized Ta\CoFeB\MgO nanowires by current pulse injection along the nanowires, both with and without a constant and uniform magnetic field collinear to the current direction. We deduce that an effective torque arising from spin-orbit effects in the multilayer drives the switching mechanism. While the generation of a component of the magnetization along the current direction is crucial for the switching to occur, we observe that even without a longitudinal field thermally generated magnetization fluctuations can lead to switching. Analysis using a generalized Néel-Brown model enables key parameters of the thermally induced spin-orbit torques-driven switching process to be estimated, such as the attempt frequency and the effective energy barrier.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Spin-torque driven magnetization switching in ferromagnetic nanopillar with pinned layer biasing configuration

Magnetization switching driven by spin transfer torque in a ferromagnetic nanopillar by biasing the angular polarizer with different orientation has been studied. The free layer dynamics includes the spin torque from the oscillating free layer with magneto crystalline anisotropy and shape anisotropy, which is governed by the Landau-Lifshitsz-Gilbert-Slonczweski (LLGS) equation and solving it numerically by using embedded Runge Kutta fourth order method. Results of numerical simulation shows that there is a drastic reduction of switching time in the free layer by the orientation of angular polarizer of the nano pillar device. We fixed the angular polarizer as 0°, 30°, 60°, 90° and the corresponding switching time is 6.53 ns, 4.36 ns, 2.25 ns and 1.21 ns respectively for an applied current density of 5 × 10{sup 11} Am{sup −2}.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Dynamic Magnetization Switching in NiO Nanoparticles: Pulsed Field Magnetometry Study

The dynamic magnetization switching of antiferromagnetic nickel oxide nanoparticles with a characteristic size of 8 nm has been experimentally investigated by pulsed field magnetometry. It is shown that, due to the presence of defects in NiO nanoparticles, as in other antiferromagnetic particles, the uncompensated magnetic moment is induced by the incomplete compensation of spins at the antiferromagnetic ordering. The dynamic magnetic hysteresis loops have been studied in pulsed fields with the maximum field (H{sub max}) of up to 130 kOe and pulse lengths (τ{sub P}) of 4, 8, and 16 ms. According to the results obtained, the coercivity (H{sub C}) depends on both the τ{sub P} and H{sub max} values. The observed increase in the H{sub C} value with decreasing pulse length (i.e., with increasing switching field frequency) is unambiguously related with the relaxation processes typical of single-domain ferromagnetic nanoparticles. However, the observed effect of the maximum applied field (H{sub max}) on the H{sub C} value is assumed to be a feature of antiferromagnetic nanoparticles.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2017

Magnetic switching in granular FePt layers promoted by near-field laser enhancement

Light-matter interaction at the nanoscale in magnetic materials is a topic of intense research in view of potential applications in next-generation high-density magnetic recording. Laser-assisted switching provides a pathway for overcoming the material constraints of high-anisotropy and high-packing density media, though much about the dynamics of the switching process remains unexplored. We use ultrafast small-angle X-ray scattering at an X-ray free-electron laser to probe the magnetic switching dynamics of FePt nanoparticles embedded in a carbon matrix following excitation by an optical femtosecond laser pulse. We observe that the combination of laser excitation and applied static magnetic field, 1 order of magnitude smaller than the coercive field, can overcome the magnetic anisotropy barrier between “up” and “down” magnetization, enabling magnetization switching. This magnetic switching is found to be inhomogeneous throughout the material with some individual FePt nanoparticles neither switching nor demagnetizing. The origin of this behavior is identified as the near-field modification of the incident laser radiation around FePt nanoparticles. Furthermore, the fraction of not-switching nanoparticles is influenced by the heat flow between FePt and a heat-sink layer.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Thermal stability and magnetization switching of composite free layer with perpendicular magnetic anisotropy

We present a micromagnetic study of a ferromagnetically exchange-coupled composite free layer design for perpendicular magnetic tunnel junctions. The thermal stability factor and critical switching current density depend on the exchange coupling strength and effective anisotropy ratio between the sublayers of the composite free layer. The energy barrier increases with an increase of the exchange coupling strength until it reaches a plateau in the strong-coupling limit. An optimal exchange coupling strength exists that leads to the minimal critical switching current and a significant improvement of the figure of merit defined as the ratio between the energy barrier and critical switching current. This behavior is obtained for smaller device sizes with uniform reversal and larger sizes with domain wall reversal.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Fast Switching Magnet for Heavy Ion Beam Separation

Fast magnets for multiplexing ion beams between different beamlines are technologically challenging and expensive, but there is an ever-growing need to develop such systems for beam separation at research and industrial facilities. For example, The Argonne Tandem Linac Accelerator System (ATLAS) is planning to expand its operations as a multi-user facility and there is a clear need, presently unmet by the industry, for a switching magnet system with the sub-millisecond transient times.In response to this problem, RadiaBeam Technologies is developing a novel pulsed switching magnet system capable of producing a 1.1T peak field over 45 cm length with a short (<1 ms) rise and fall time. The key enabling innovation in this project is an introduction of a solid-state interposed modulator architecture, which enables to improve magnet performance and reliability and reduce the cost to a practical level.

43 PARTICLE ACCELERATORS↗
DOE OSTI2014

Magnetic switching behaviors of orbital states with different magnetic quantum numbers in Au/Fe/MgO multilayer system

A spin specific magnetic hysteresis (SSMH) curve and an orbital specific magnetic hysteresis (OSMH) curve are obtained for Fe/Au/Fe/MgO multilayers by magnetic Compton scattering and SQUID magnetometer measurements. The SSMH curve with each contribution of magnetic quantum number |m| = 0, 1, and 2 states is obtained by decomposition analyses of magnetic Compton profiles. Residual magnetization is observed for the SSMH curve with magnetic quantum number |m| = 0, 2 and the OSMH curve. Although the SQUID magnetometer measurements do not show perpendicular magnetic anisotropy (PMA) in the present Fe/Au/Fe/MgO multilayer film, the SSMH curve with magnetic quantum number |m| = 0, 2 and OSMH curve show switching behaviors of PMA.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Size dependence of magnetization switching and its dispersion of Co/Pt nanodots under the assistance of radio frequency fields

We have studied the dot size dependence of microwave assisted magnetization switching (MAS) on perpendicular magnetic Co/Pt multilayer dot array. The significant microwave assistance effect has been observed over the entire dot size D ranging from 50 nm to 330 nm examined in the present study. The MAS behavior, however, critically depends on D. The excitation frequency dependence of the switching field is well consistent with the spin wave theory, indicating that the magnetization precession in MAS is in accordance with the well defined eigenmodes depending on the dot diameter. The lowest order spin wave is only excited for D ≤ 100 nm, and then the MAS effect is well consistent with that of the single macrospin prediction. On the other hand, higher order spin waves are excited for D > 100 nm, giving rise to the significant enhancement of the MAS effect. The dispersion of MAS effect also depends on D and is significantly reduced for the region of D > 100 nm. This significant reduction of the dispersion is attributed to the essential feature of the MAS effect which is insensitive to the local fluctuation of anisotropy field, such as defect, damaged layer, and so on.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Spin-Correlated Radical Pairs as Magnetic Switches for Controlling Emissive Triplet States via Triplet–Triplet Energy Transfer

Magnetic fields offer a powerful means to control molecular emission, enabling quantum sensing and spin-level control of chemical reactions. Here, we demonstrate a strategy to magnetically control red to near-infrared phosphorescence via triplet–triplet energy transfer (TTET) from donor–chiral bridge–acceptor (D−χ–A) molecules that generate spin-correlated radical pairs (SCRPs) upon photoexcitation. These SCRPs yield non-emissive triplet excited states whose formation is sensitive to magnetic fields. Here, by transferring this energy to emissive Pt- and Pd-based π-extended porphyrins, we enable magnetic control over phosphorescence that would otherwise be unresponsive to weak magnetic fields (<1 T). This approach establishes a platform for quantifying magnetic field effects on silent triplet states while extending magnetically responsive emission into the near-infrared. Coupling SCRP-based molecular magnetic switches to long-wavelength emissive acceptors offers a new way for probing and modulating spin-dependent processes and triplet-state populations in molecular systems.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗