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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Evaluation of Low-Pressure-Sintered Multi-Layer Substrates for Medium-Voltage SiC Power Modules: Preprint

Direct-bonded aluminum (DBA) multi-layer substrates have been fabricated using low-pressure silver sintering. These multi-layer substrates can be used to reduce the peak electric field strength inside power modules. This benefit is particularly important for medium-voltage silicon carbide (SiC) MOSFETs due to their higher operating voltages. The voiding content and defect density of the bond used to create the multi-layer substrate stackup is critical to the thermal performance and reliability of the power module. This work two low-pressure-assisted sintering techniques; one using nano-silver preform and the other using nano-silver paste to bond 23 mm by 49 mm DBA substrates. Scanning acoustic microscopy (C-SAM) is used to evaluate the bond quality after sintering. To evaluate the reliability of the sintered multi-layer substrates, passive thermal cycling from –40 °C to 200 °C was performed. Cross-sections were cut at pre-determined intervals and imaged with Scanning Electron Microscopy (SEM). After 1,000 thermal cycles, minor cracking was observed, but no failures have occurred.

28 EE - Advanced Manufacturing Office (EE-5A)↗
DOE OSTI2021

SiC-Based 5-kV Universal Modular Soft-Switching Solid-State Transformer (M-S4T) for Medium-Voltage DC Microgrids and Distribution Grids

Medium-voltage DC (MVDC) grids are attractive for electric aircraft and ship power systems, battery energy storage system (BESS), fast charging electric vehicle (EV), etc. Such EV or BESS applications need isolated bidirectional MVDC to LVDC or LVAC converters. However, the existing Si-based solutions cannot fulfill the requirements of a high-efficiency and robust converter for MVDC grids. This paper presents a 5 kV SiC-based universal modular solid-state transformer (SST). This universal current-source SST can interface either a LVAC or LVDC grid with a MVDC grid in single-stage power conversion, while the conventional dual active bridge (DAB) converter needs an additional inverter. The proposed SST module using 3.3 kV SiC MOSFETs and diodes is bidirectional and can serve as a building block in series or parallel for higher-voltage higher-power systems. The topology of each module is based on the soft-switching solid-state transformer (S4T) with reduced conduction loss, which features reduced EMI through controlled dv/dt, and high efficiency with full-range ZVS for main devices and ZCS for auxiliary devices. Operation principle of the modular S4T (M-S4T), capacitor voltage balancing control between the cascaded modules, design of components including a medium-voltage (MV) medium-frequency transformer (MFT) to realize a 50 kVA 5 kV DC to 600 V DC or 480 V AC M-S4T are presented. Importantly, the MV MFT prototype achieves very low leakage inductance (0.13%) and 15 kV insulation with coaxial cables and nanocrystalline cores. Here, the proposed universal modular SST is compared against the DAB solution and verified with DC-DC and DC-AC simulation and 4 kV experimental results. Significantly, the MV experimental results of a modular DC transformer with each module at MVDC are rarely covered in the literature and reported for the first time.

14 SOLAR ENERGY↗
DOE OSTI2025

PID-Regulated Heating System for PIP-II Reference Line

The Proton Improvement Project-2 centers on building a new superconducting linear particle accelerator (Linac) at Fermilab. At the heart of the accelerator is the reference line, a critical system that defines the ideal path for the particle beam as it passes through magnets, RF cavities, and other beamline elements. Temperature stability is crucial for the reliable operation of RF components, such as mixers and filters. Fluctuations affect key performance parameters like conversion loss, isolation, and linearity. To mitigate any drift caused by ambient temperature changes, a heating plate assembly is utilized to maintain key components at a controlled temperature of 40°C. The system utilizes an aluminum 36”x36”x0.5” heat plate powered by a MOSFET-based control circuit, delivering approximately 460 W of thermal energy through a resistor array. Real-time temperature feedback is provided by a PT100 Resistance Temperature Detector (RTD), which interfaces with a Proportional–Integral–Derivative (PID) control algorithm to maintain closed-loop temperature regulation. The control signal actively modulates the gate voltage of an N channel MOSFET, dynamically adjusting power delivery in response to deviations from the temperature setpoint. Simulations and LTspice models validate the functionality and responsiveness of the circuit under varying conditions. The prototype has successfully demonstrated stable thermal control, paving the way for integration into the PIP-II infrastructure. The final design will feature an expanded resistor array, as well as communication with a PLC for continuous data acquisition and diagnostics. This work directly supports Fermilab’s broader mission by contributing to the stability and reliability of core accelerator systems, enhancing the precision of particle beam delivery for future physics experiments.

Mosher, Alexander [Fermilab]↗
DOE OSTI2020

Improving Heat Conduction of Insulated Metal Substrate with Thermal Pyrolytic Graphite Core for SiC Power Module Packaging

TPG-core IMS concept was jointly explored in this study. Integrating high thermally conductive TPG graphite core into IMS is expected to simultaneously achieve high thermal conductivity from TPG and electrical functionalities from IMS. Nearly 2x thermal conductivity and 30% weight saving was demonstrated on TPG-core IMS compared to conventional Cu-core IMS. Significant junction temperature reduction (11°C) in steady state and power cycling was revealed by the thermal analysis as the result of improved thermal spreading in plane and through the thickness. The study also proved the manufacturability and compatibility of this TPG-core IMS structure to the existing IMS production and power module assembling. Finally, the integration of TPG and IMS paves a new packaging route to increase heat load, improve reliability, simplify module design and reduce assembling cost and number of steps.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Reliability Analysis of Large-Area, Low Pressure-Assisted Silver Sintering for Medium-Voltage Power Modules

Multi-layer insulating ceramic substrates can enable medium-voltage (MV) power modules with reduced peak electric field. This benefit is particularly important for MV silicon carbide (SiC) MOSFETs due to their higher operating voltages. Large-area, low-pressure assisted silver sintering is a potential solution for bonding substrates to create a multi-layer structure. The voiding content and defect density of the bond used to create the multi-layer substrate stack-up is critical to the reliability of the power module and the thermal performance, as this bond is in the primary path for heat dissipation in the power module structure. Here, samples of two-layer direct bonded aluminum (DBA) stacks have been fabricated and subjected to thermal cycling to analyze their reliability. Passive thermal cycling from -40 degrees C to 200 degrees C was performed. Cross-sections were cut at pre-determined intervals and imaged with Scanning Electron Microscopy (SEM). After 1000 thermal cycles, adhesive failures are observed between the sintered silver and the DBA surface. Cross-sections were cut and imaged via optical microscope and SEM. Thermal analyzer measurements are recorded on a 10-kV SiC power module utilizing the sintered DBA substrate stacks.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2025

Rapid Prototyping Techniques for Organic Direct-Bonded-Copper Power Modules

Organic Direct-Bonded-Copper (ODBC) is a novel packaging technology for power modules which allows higher flexibility in layout design. In this work, a set of rapid prototyping techniques are developed for ODBC modules based on a polyimide dielectric material. These techniques enable fast and low-cost fabrication of modules with 3-Dimensional (3D) layout features. An example half-bridge (HB) silicon carbide (SiC) metal oxide semiconductor field effect transistor (MOSFET) module is designed and prototyped using the proposed techniques aiming at ultra-low power loop inductance. Finite element analysis (FEA)-circuit co-simulations results and experimental results validate an approximately 0.71nH power loop inductance for the example module design.

36 MATERIALS SCIENCE↗
DOE OSTI2022

A High-Voltage High-Reliability Scalable Architecture for Electric Vehicle Power Electronics (Final Report)

This project developed and demonstrated new composite converter technologies that lead to high power density (> 20 kW/L) at power levels of 10s of kW, 100s of kW, or possibly higher, with fundamental advances in converter efficiency and Q that lead to substantial increases in mean time to failure (MTTF). These advantages were realized through development of new composite converter topologies that perform buck, boost, or other conversion functions and that are scalable to higher voltage and power levels through sharing of voltage and current stresses among multiple dissimilar partial-power converter modules. The project led to experimental demonstration of a125 kW multifunction electric vehicle power conversion system having in-creased dc bus voltage (950 V nominal, 1200 V peak) that interfaces a 200 V to 400 V battery pack, and that includes integrated level 2 wired charging and wireless charging functions. The project incorporated SiC MOSFET modules having switching frequencies in excess of 100 kHz, planar magnetics, a hierarchical control architecture that enables scaling to higher voltages and powers with additional converter modules, and a high-power density in excess of 20 kW/L. The research demonstrated how a more complex converter approach can increase mean-time-to-failure, even though the number of elements is increased. This is achieved through significant reduction of temperature rise through fundamentally superior converter circuit topologies. The research also demonstrated new high power planar magnetics that increase power density. The technology is appropriate to a variety of applications including EV power trains, EV charging, PV inverters, battery storage, and similar areas. These systems potentially can be manufactured in the U.S.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2024

An Organic, Direct Bonded Copper, Multi-Layered, Ultra-Low Inductance Package for High-Power UWBG MOSFETs

The most common metalized substrates used in high-power switching packages consist of a ceramic layer such as Aluminum Nitride (AlN) sandwiched between two copper layers. Ceramic substrates are used because it has the key characteristic of having high dielectric strength while being thermally conductive. A large drawback to ceramic substrates is that they do not allow for a multi-layered circuit design. By replacing the traditional ceramic substrate with organic direct bonded copper (ODBC) we can open a wide range of possibilities when it comes to power module layout such as multi-layered circuits and double-sided cooling. Both benefits are critical while packaging high-performance Gallium Oxide (Ga2O3) MOSFETs. Because of Ga2O3's relatively poor thermal conductivity, a double-sided cooled package becomes necessary. Therefore, the use of ODBC provides the flexibility to fabricate copper traces carrying much higher currents, and by creating a multi-layered package, we can drastically reduce the parasitic inductance inside the power module. Achieving lower parasitic inductance is critical for an ultra-fast Ga2O3 package to avoid excessive voltage overshoot and ringing. Using ODBC, we have designed novel packages capable of handling the challenges presented by fast Ga2O3 switching. Using multi-physics modeling software, we can validate our design before building the prototype. Due to the simple process parameters needed to work with ODBC, we can rapidly create prototypes without using external vendors. This flexibility allows us to quickly design, build, and validate highly complex switching power modules to accommodate next generation, Ga2O3 switching devices.

ADVANCED PROPULSION SYSTEMS,ENGINEERING↗
DOE OSTI2024

Power Module Precursors and Prognostics

This project focuses on finding and utilizing electrical properties (precursors) of power electronic devices and modules whose changes have strong correlations with different modes and levels of degradations in order to realize online and lightweight state of health evaluation and fault diagnosis. Results from this project will contribute to higher safety, reliability, and power density of power electronic components. The approaches mainly include reviewing academic literature and industry practices for state of the art precursor identification and extraction, accelerated life cycles (ALC) of various power modules to create different degradations in-house, and developing techniques for gate-driver-integratable precursor detection circuit. In FY24, the results includes two sets of definitively detected aging precursors (on-state resistance and gate threshold voltage) for two sets of power modules respectively, controlled accelerated lifetime cycling of multiple silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) modules, and the development and validation of a gate voltage detection system.

ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2020

1.2 kV, 10 A, 4H-SiC Bi-Directional Field Effect Transistor (BiDFET) with Low On-State Voltage Drop

Bidirectional power switches are used in matrix-or cyclo-converters and in multistage inverter circuits to facilitate high-frequency AC-to-AC conversion. A new 1.2 kV bidirectional MOSFET (BiDFET) with low on-resistance is achieved and demonstrated using two discrete SiC power MOSFET bare die chips, packaged within a four-terminal custom-designed module. Static and dynamic characterization has been carried out to inspect the on-state and switching behaviour of the BiDFET. Here, the BiDFET is shown to have a low forward voltage drop of 0.6 V at a current of 10 A, which is more than 2.5x smaller than previous Si IGBT and SiC MOSFET based bidirectional switch implementations.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Thermal Optimization of a Silicon Carbide, Half-Bridge Power Module

This project describes the modeling process to design the packaging and heat exchanger for a half-bridge wide-bandgap (WBG) power semiconductor module. The module uses two silicon carbide, metal-oxide-semiconductor field-effect transistor (MOSFET) devices per switch position that are soldered to an aluminum nitride, direct-bond copper (DBC) substrate. A baseplate cooling configuration (e.g., no thermal grease) is used along with a water-ethylene glycol, jet-impingement-style heat exchanger. The heat exchanger was designed to be fabricated using prototyping equipment from the National Renewable Energy Laboratory, complies with automotive standards (for minimal channel sizes, flow rates, and coolant), and considers reliability aspects (i.e., erosion/corrosion). Device-scale computational fluid dynamics (CFD) is used first to design the slot jet impingement cooling configuration and compute the effective heat transfer coefficient (HTC) of the concept. The computed HTCs are then used as boundary conditions for a finite element study to optimize the package geometry (e.g., device layout and baseplate thickness) to minimize thermal resistance and minimize temperature variation between the module's four devices. Finally, a fluid manifold is designed to generate the slot jets and cool the devices. Module-scale CFD predicts a relatively low junction-to-fluid thermal resistance of 16.7 mm2 K/W, a 1.4 degrees C temperature variation between devices, and a total pressure drop of 5,860 Pa (0.85 psi) for the design. The thermal resistance of the module design is about 67% lower than the 2015 BMW i3 power electronics/modules thermal resistance.

DIRECT ENERGY CONVERSION↗
DOE OSTI2020

Optimized Highly Efficient SSCB Using Organic Substrate Packaging for Electric Vehicle Applications

Solid State Circuit Breakers (SSCBs) are an attractive protection solution for their arcless current interruption and fast actuation speeds over mechanical breakers. This paper proposes a Bidirectional SSCB (BSSCB) with a thermally defined and digitally controlled current time profile for fault protection in EV and other low-voltage DC systems. The paper proposes an organic packaging approach utilizing flex circuitry to develop a reliable, cost-effective power module for BSSCBs. The paper studies transient heat transfer in the power modules using finite element analysis (FEA). An RC themal ladder network is extracted to define a fusing curve. To demonstrate and verify the design, a 1kV/50 A SiC MOSFET BSSCB prototype is fabricated and tested, having a power density of 60 W/cm3 and 4x reduction in form factor over presently researched breakers. Also, given are results for 750 V/150 A operation showing interruption in 2.4 μs.

organic power packaging↗
DOE OSTI2020

Hardware Design and Demonstration of a 100kW, 99% Efficiency Dual Active Half Bridge Converter Based on 1700V SiC Power MOSFET

High efficiency, high density and galvanically isolated power converters are attractive for numerous medium voltage high power applications. This paper presents a 1.5kVdc, 100kW bidirectional Dual Active Half Bridge (DAHB) using newly developed 1.7kV SiC MOSFET modules. The DAHB achieved an efficiency of 98.6% at full load of 100kW and a maximum of 99% at 45kW, operating as an isolated DC/DC converter. The converter also achieved an efficiency of 97.8% operating as an isolated DC/AC inverter. An optimized PCB-based busbar design has significantly reduced the voltage overshoot across the device, making the design suitable for 1500Vdc input application such as 1500V PV inverters. Typical partial discharge inception voltage (PDIV) of the optimized PCB busbar is 1.7kVpeak with total charge <10pC. The power density of the DAHB converter is 1.8MVA/m 3 which is much higher than traditional two-stage industry products. The DAHB converter can be used as a building block for a 4.16kV/1MVA utility scale PV systems with input parallel and output series configuration.

Xu, Wei↗
DOE OSTI2023

Ramp Generator for Electron Scanner in SNS Beam Profile Measurements System

A new fast high voltage Ramp Generator to deflect an electron beam in the Electron Scanner is required at the Spallation Neutron Source (SNS) in the Oak Ridge National Laboratory. The Electron Scanner is used for non-destructively measuring the transverse profiles of the proton beam in the accumulator ring of the SNS [1]. The existing deflector is obsolete and needs to be replaced. A new Ramp Generator is proposed based on fast high voltage MOSFET power switches. Two configurations have been considered. One is bipolar, with two opposite polarity power supplies and one switch module or two single switches, and the other is unipolar, with one power supply and two switch modules. Schematics and performance of both options are described, and results of the prototype testing are presented in the paper.

Peplov, Vladimir↗
DOE OSTI2021

Model Reduction by Generalized Falk Method for Efficient Field-Circuit Simulations

The Generalized Falk Method (GFM) for coordinate transformation, together with two model-reduction strategies based on this method, are presented for efficient coupled field-circuit simulations. Each model-reduction strategy is based on a decision to retain specific linearly-independent vectors, called trial vectors, to construct a vector basis for coordinate transformation. The reduced-order models are guaranteed to be stable and passive since the GFM is a congruence transformation of originally symmetric positive definite systems. We also show that, unlike the Pad´e-via-Lanczos (PVL) method, the GFM does not generate unstable positive poles while reducing the order of circuit problems. Further, the proposed GFM is also faster when compared to methods of the type Lanczos (or Krylov) that are already widely used in circuit simulations for electrothermal and electromagnetic problems. The concept of response participation factors is introduced for the selection of the trial vectors in the proposed model-reduction methods. Further, we present methods to develop simple equivalent circuit networks for the field component of the overall field-circuit system. The implementation of these equivalent circuit networks in circuit simulators is discussed. With the proposed model-reduction strategies, significant improvement on the efficiency of the generalized Falk method is illustrated for coupled field-circuit problems.

42 ENGINEERING↗
DOE OSTI2021

Instability Issue of Paralleled Dies in an SiC Power Module in Solid-State Circuit Breaker Applications

Paralleled dies in a power module could have instability issues during high current switching transients. Here, the instability is caused by the differential-mode oscillation among paralleled MOSFETs. Conventional analyses of paralleled MOSFETs’ stability are normally limited to a single operating point, which ignores the influences of the switching trajectory and nonlinear device parameters on stability. This article reveals that the switching trajectory can significantly influence parallel stability. The analysis is improved by solving eigenvalues of state-space modeling system matrices of all operating points that the switching trajectory goes through considering nonlinear device parameters. Higher voltage and current stresses result in greater real parts of complex eigenvalues, which explains why the paralleled MOSFETs are more unstable with higher voltage and current stresses. To improve stability in solid-state circuit breaker applications, we propose a method to manipulate the switching trajectory to avoid the unstable region where the conventional hard switching trajectory normally goes through. Experimental results show that the turn- off current capability can be increased from ~five times of rated current with the gate oscillation using the conventional turn- off trajectory to ~ten times of rated current without the gate oscillation using the optimal turn- off trajectory.

42 ENGINEERING↗
DOE OSTI2025

Design and Commission of Solid State Switch Driver in SLAC Subbooster Modulator

The LINAC sub-booster modulator is a pulsed power supply to provide a 30kV pulse to drive a klystron in SLAC LINAC. It has utilized vacuum tetrode as pulse switch for more than 60 years. With the vacuum tetrode availability becoming less and its cost surging, a natural choice is to use solid state switch in this pulsed power modulator. To commission solid state switch in LINAC sub-booster modulator, a driver board is designed to drive a BEHLKE HTS-LC2 series MOSFET based switches. The design concept and some concerns in design will be presented. The driver board is universal for all HTS-LC2 series switches because they share the same driver signals and connections. After the driver is commissioned, two AI systems are introduced to design one core part of the driver, the results are presented here. During the commission of the driver board in the LINAC sub-booster modulators, some problems happened and were addressed.

AI Circuit Design↗
DOE OSTI2020

A Novel Voltage Balancing Control With dv/dt Reduction for 10-kV SiC MOSFET-Based Medium Voltage Modular Multilevel Converter

Using high voltage (HV) silicon carbide (SiC) power semiconductors in a modular multilevel converter (MMC) is promising because it results in fewer submodules and lower switching loss compared to conventional Si based solutions. The nearest level pulsewidth modulation (NL-PWM) is commonly used in the MMC for medium voltage applications. However, with the NL-PWM and existing voltage balancing control, there are many submodules that switch their modes in a control cycle, resulting in a high dv/dt during the deadtime of the power semiconductor, which could be multiple times of the dv/dt of the single device. This poses great challenges on the noise immunity and insulation design in the MMC using HV SiC devices, which have very fast switching speed. A novel voltage balancing control, which ensures only two submodules switch their modes in a control cycle, is proposed in this article, limiting the maximum dv/dt to the dv/dt of a single power semiconductor and also maintaining the voltage balance performance. Furthermore, the proposed voltage balancing control is experimentally validated in a 10-kV SiC mosfet based MMC with four submodules per arm.

42 ENGINEERING↗