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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Memory Effect on the Synthesis of Perovskite-Type Li-Ion Conductor Li x La 2/3– x /3 TiO 3 (LLTO)

The structural chemistry of the solid ion-conducting Li x La 2/3–x/3 TiO 3 (LLTO) is rich with various polymorphs related to atomic segregation. Here, we explored the LLTO reaction pathway from various structurally related precursors (La 2 LiO 3 H, Li 2 TiO 3 , and Li 4 Ti 5 O 12 ), focusing on the effects of LLTO-like structural motifs in precursors using a combination of experimental and computational techniques. Density functional theory (DFT) calculations revealed that the failure of syntheses to produce LLTO below 1300 °C is due to the presence of multiple competing low-energy phases that result in competitive byproduct formation. In all syntheses where T = 1300 °C, LLTO was the sole product; however, varying phase fractions of I4/mcm and P4/nbm polymorphs and double-perovskite P4/mmm can be obtained depending on the synthesis route. This is an unusual result as at 1300 °C, LLTO should only be the ideal cubic Pm-3m perovskite structure, yet there appears to be a memory effect from the different precursors resulting in the unique phase selectivity and stabilization.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Long-time memory effects in a localizable central spin problem

We study the properties of the Nakajima–Zwanzig memory kernel for a qubit immersed in a many-body localized (i.e. disordered and interacting) bath. We argue that the memory kernel decays as a power law in both the localized and ergodic regimes, and show how this can be leveraged to extract t → ∞ populations for the qubit from finite time (Jt ≤ 10 2 ) data in the thermalizing phase. This allows us to quantify how the long-time values of the populations approach the expected thermalized state as the bath approaches the thermodynamic limit. This approach should provide a good complement to state-of-the-art numerical methods, for which the long-time dynamics with large baths are impossible to simulate in this phase. Additionally, our numerics on finite baths reveal the possibility for unbounded exponential growth in the memory kernel, a phenomenon rooted in the appearance of exceptional points in the projected Liouvillian governing the reduced dynamics. In small systems amenable to exact numerics, we find that these pathologies may have some correlation with delocalization.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2020

Ultrafast Electron Correlations and Memory Effects at Work: Femtosecond Demagnetization in Ni

Experimental observations of the ultrafast (less than 50 fs) demagnetization of Ni have so far defied theoretical explanations particularly since its spin-flipping time is much less than that resulting from spin-orbit and electron-lattice interactions. Through the application of an approach that benefits from spin-flip time-dependent density-functional theory and dynamical mean-field theory, we show that proper inclusion of electron correlations and memory (time dependence of electron-electron interaction) effects leads to demagnetization at the femtosecond scale, in good agreement with experimental observations. Furthermore, our calculations reveal that this ultrafast demagnetization results mainly from spin-flip transitions from occupied to unoccupied orbitals implying a dynamical reduction of exchange splitting. In this work, these conclusions are found to be valid for a wide range of laser pulse amplitudes. They also pave the way for ab initio investigations of ultrafast charge and spin dynamics in a variety of quantum materials in which electron correlations may play a definitive role.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2024

Nanoscale Probing of Electrical Memory Effects in van der Waals Layered PdSe 2

Tunable electronic materials that can be switched between different impedance states are fundamental to the hardware elements for neuromorphic computing architectures. This “brain-like” computing paradigm uses highly paralleled and colocated data processing, leading to greatly improved energy efficiency and performance compared to traditional architectures in which data have to be frequently transferred between processor and memory. In this work, we use scanning microwave impedance microscopy for nanoscale electrical and electronic characterization of two-dimensional layered semiconductor PdSe 2 to probe neuromorphic properties. The local resolution of tens of nanometers reveals significant differences in electronic behavior between and within PdSe 2 nanosheets (NSs). In particular, we detected both n-type and p-type behaviors, although previous reports only point to ambipolar n-type dominating characteristics. Nanoscale capacitance–voltage curves and subsequent calculation of characteristic maps revealed a hysteretic behavior originating from the creation and erasure of Se vacancies as well as the switching of defect charge states. In addition, stacks consisting of two NSs show enhanced resistive and capacitive switching, which is attributed to trapped charge carriers at the interfaces between the stacked NSs. Stacking n- and p-type NSs results in a combined behavior that allows one to tune electrical characteristics. In conclusion, as local inhomogeneities of electrical and electronic behavior can have a significant impact on the overall device performance, the demonstrated nanoscale characterization and analysis will be applicable to a wide range of semiconducting materials.

2D material↗
DOE OSTI2021

Local structure memory effects in the polar and nonpolar phases of MoTe 2

We use total scattering to study the reversible transition between the polar 1T' and nonpolar T d phases of layered MoTe 2 taking place at 240 K. Whereas, macroscopically, the transition appears to be first order, locally, it is not. In particular, a great deal of the stacking sequence of Te-Mo-Te layers characteristic of the polar 1T' phase persists locally in the nonpolar T d phase, and vice versa, over a broad temperature range extending about 100 K both below and above the transition. The intermixing ratio for the two sequences evolves gradually across the transition temperature, consistent with a second-order transition behavior. Here, the presence of coexisting local polar and nonpolar regions and the resulting variety of internal interfaces where the spatial inversion symmetry is broken may be behind some of the unusual electronic properties of T d –MoTe 2 , including its putative type-II Weyl semimetal state.

2-dimensional systems↗
DOE OSTI2022

MemGaze: Rapid and Effective Load-Level Memory Trace Analysis

A major challenge of memory analysis tools is combining high-resolution analysis and low overhead measurement. Currently, hardware/software-based analysis of load-level sequences incurs time slowdowns of O(100×). We present MemGaze, a tool for low-overhead, high-resolution memory analysis. MemGaze uses Intel’s Processor Tracing (PT) instruction ptwrite to collect sampled and compressed memory address traces for load-level, sequence-aware analysis of data reuse. We describe multi-resolution analysis for locations vs. operations, accesses vs. spatio-temporal reuse, and reuse (distance, rate, volume) vs. access patterns. Both trace size and resolution are controllable. We use MemGaze to elucidate the memory effects of different data structures and algorithms. For sampled traces that are ˜1% of a full one, analysis metrics have 1-25% MAPE for histograms of varying dynamic sequence lengths. With current suboptimal kernel support (PT runs continuously), MemGaze’s time overhead is typically 10–95%; 7× at worst. However, when PT runs only during samples, overhead is 10–35% on memory intensive regions and correlates with executed ptwrites.

Kilic, Ozgur O.↗
DOE OSTI2024

Memory and rejuvenation in glassy systems

Here, the memory effect in a single crystal spin glass (Cu 0.92 Mn 0.08 ) has been measured using 1 Hz ac susceptibility measurements over a reduced temperature range of 0.4 - 0.7 T g and a model of the memory effect has been developed. A double-waiting-time protocol is carried out where the spin glass is first allowed to age at a temperature below T g , T w$_{1}$ , followed by a second aging 4 K lower, T w$_{2}$ . The 4 K separation is sufficient to ensure rejuvenation has occurred. The model is based on calculating overlaps between the growth of the correlation lengths at the two temperatures. It accounts for the absolute magnitude of the memory effect as a function of both waiting times and temperatures. The data can be explained by the memory loss being a function of the relative change in the correlated volume at the first waiting temperature due to growth in the correlations at the second waiting temperature.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Jamming, fragility and pinning phenomena in superconducting vortex systems

Abstract We examine driven superconducting vortices interacting with quenched disorder under a sequence of perpendicular drive pulses. As a function of disorder strength, we find four types of behavior distinguished by the presence or absence of memory effects. The fragile and jammed states exhibit memory, while the elastic and pinning dominated regimes do not. In the fragile regime, the system organizes into a pinned state during the first pulse, flows during the second perpendicular pulse, and then returns to a pinned state during the third pulse which is parallel to the first pulse. This behavior is the hallmark of the fragility proposed for jamming in particulate matter. For stronger disorder, we observe a robust jamming state with memory where the system reaches a pinned or reduced flow state during the perpendicular drive pulse, similar to the shear jamming of granular systems. We show signatures of the different states in the spatial vortex configurations, and find that memory effects arise from coexisting elastic and pinned components of the vortex assembly. The sequential perpendicular driving protocol we propose for distinguishing fragile, jammed, and pinned phases should be general to the broader class of driven interacting particles in the presence of quenched disorder.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

The neutrino gravitational memory from a core collapse supernova: phenomenology and physics potential

General Relativity predicts that the passage of matter or radiation from an asymmetrically-emitting source should cause a permanent change in the local space-time metric. This phenomenon, called the gravitational memory effect, has never been observed, however supernova neutrinos have long been considered a promising avenue for its detection in the future. With the advent of deci-Hertz gravitational wave interferometers, observing the supernova neutrino memory will be possible, with important implications for multimessenger astronomy and for tests of gravity. In this work, we develop a phenomenological (analytical) toy model for the supernova neutrino memory effect, which is overall consistent with the results of numerical simulations. This description is then generalized to several case studies of interest. We find that, for a galactic supernova, the dimensionless strain, h(t), is of order ~ 10 -22 - 10 -21 , and develops over a typical time scale that varies between ~ 0.1 - 10 s, depending on the time-evolution of the anisotropy of the neutrino emission. The characteristic strain, h c (f), has a maximum at a frequency f max ~ Script $\mathcal{O}$(10 -1 ) - Script $\mathcal{O}$(1) Hz. The detailed features of the time- and frequency-structure of the memory strain will inform us of the matter dynamics near the collapsed core, and allow to distinguish between different stellar collapse scenarios. Next generation gravitational wave detectors like DECIGO and BBO will be sensitive to the neutrino memory effect for supernovae at typical galactic distances and beyond; with Ultimate DECIGO exceeding a detectability distance of 10 Mpc

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗