Device response principles and the impact on energy resolution of epitaxial quantum dot scintillator with monolithic photodetector integration
Data related to (pending) publication.
36 MATERIALS SCIENCE↗
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Ion Traps and Packaging for Heterogenous Integration - Chimera
Microfabricated surface ion traps and silicon-based photonics are critical technologies for scaling quantum systems. Current ion trap architectures face scalability and integration challenges due to limitations in optical access, fabrication techniques, and material compatibility. State-of-the-art quantum computers and atomic clocks are investigating monolithic integration, which necessitates custom traps for each ion species and has not overcome the integration hurdles presented by merging these technologies. The Chimera (Ion Traps and Packaging for Heterogeneous Integration) project proposes a novel approach utilizing heterogeneous integration (HI) of ion traps and photonic circuits. This separation of components allows for flexibility in ion trap design and reduces fabrication compromises. The Chimera project specifically designed an ion trap to interface vertically with a separately fabricated waveguide chip and demonstrates the first steps to integrating them at the packaging level. The ion trap features a large area of removed silicon, allowing the photonics chip outputs closer to the ion trap, improving alignment and packaging processes. The alignment must be accurate to < 1 µm to ensure that the light from the waveguide can overlap with the trapping region. This fine alignment must also be maintained through an ultra-high vacuum bake, a critical step in preparing an ion trap experiment. By combining separate chips, we demonstrate a new path for scaling trapped ion technology that is less reliant on monolithic integration. We successfully fabricated a trap with a large area of oxide removed, resulting in a region thinned to about 40 µm, a key milestone toward successful integration.
42 ENGINEERING↗
Isolation of individual Er quantum emitters in anatase TiO 2 on Si photonics
Defects and dopant atoms in solid state materials are a promising platform for realizing single photon sources and quantum memories, which are the basic building blocks of quantum repeaters needed for long distance quantum networks. In particular, trivalent erbium (Er 3+ ) is of interest because it couples C-band telecom optical transitions with a spin-based memory platform. In order to produce quantum repeaters at the scale required for quantum networks it is imperative to integrate these necessary building blocks with mature and scalable semiconductor processes. Here, in this work, we demonstrate the optical isolation of single Er 3+ ions in CMOS-compatible titanium dioxide (TiO 2 ) thin films monolithically integrated on a silicon-on-insulator photonics platform. Our results demonstrate an initial step toward the realization of a monolithically integrated and scalable quantum photonics package based on Er 3+ doped thin films.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Rapid Open-Air Fabrication of Perovskite Solar Modules
We report on the open-air fabrication of perovskite solar modules with key advances including scalable large-area spray deposition, new monolithic integration scribing techniques, advanced photoluminescence characterization, and reproducible high-throughput manufacturability. Perovskite deposition with linear speeds of 12 m/min without a post-anneal are demonstrated with improved device performance, luminescent yield and >10X carrier lifetimes. Manufacturability using monolithic integration of series-connected modules is accomplished with a new indirect fiber laser ablation scribing method. A stable cell and module power output of 18.0% and 15.5%, respectively, was achieved with a subcell V oc > 1.06V. A comprehensive supporting technoeconomic analysis details the entire in-line manufacturing process from the glass substrate to the junction box of the encapsulated module. Here, the module manufacturing cost, balance of system costs and levelized cost of energy for a range of module efficiencies and lifetimes provides insights for the necessary tool speeds, efficiencies, and lifetimes for utility-scale energy generation.
14 SOLAR ENERGY↗
Rapid Open-Air Processing of Low-Cost Perovskite Solar Modules
We report an industrially relevant approach to both scalable and fast open-air perovskite photovoltaic (PV) module production. This work resolves some of the most formidable barriers to module-level scaling that the perovskite community has been facing. Key advances include scalable large-area spray deposition, new monolithic integration scribing techniques, advanced photoluminescence characterization, and reproducible high-throughput manufacturability. Our rapid spray processing techniques enabled the highest perovskite PV efficiency produced in open-air. Innovations in scribing techniques enabled the first single-source laser process to achieve perovskite module monolithic integration and technoeconomic analysis led to a comprehensive cost model for perovskite module manufacturing. We report significant progress in reducing perovskite manufacturing costs necessary to potentially compete with incumbent Si-based PV for utility-scale power generation.
cost modeling↗
Perovskite/Perovskite Tandem Photoelectrodes for Low-Cost Unassisted Photoelectrochemical Water Splitting
In this project, we aim to address the challenges of achieving efficient and cost-effective unassisted photoelectrochemical water splitting using perovskite/perovskite tandem photoelectrodes. We utilized the following unique approaches to advance our innovation. (1) We developed stable and efficient low-E g (1.2 – 1.4 eV) perovskites as the bottom electrodes. We demonstrated approaches to improve the photovoltaic performance and photothermal stability of low-E g Sn-Pb iodide perovskite solar cells. (2) We developed a low-temperature synthesis route to fabricate wide-E g (>1.8 eV) perovskite top electrodes. By combining theoretical and experimental investigation, we found methods to reduce the formation of defects and dislocations in the wide-E g mixed halide perovskites and suppress halide segregation. (3) We developed a robust metal oxide-based interconnecting layer to integrate two perovskite layers into tandem photoelectrodes. Our monolithically integrated tandem devices feature a high V OC of more than 2 V and a high J SC of more than 15 mA/cm 2 . We showed the new design of the tandem photoelectrodes that is critical to the stable operation of tandem photoelectrodes for unassisted PV/PEC water splitting. (4) We demonstrated a water-impermeable barrier of carbon paste/epoxy/metal foil composite, which can prevent photocorrosion and water ingress of perovskite active layers. This surface protection enabled the operation of perovskite photoelectrodes in water and significantly enhanced the long-term stability of our tandem devices. (5) We conducted standardized PEC characterization in collaboration with NREL and reported accurate determination of solar-to-hydrogen conversion efficiencies of perovskite/perovskite tandem photoelectrodes. At the end of the project, we demonstrated perovskite/perovskite tandem photoelectrodes with STH efficiencies of up to 18% and less than 20% efficiency loss after continuous operation for more than 500 hours in water. Our results demonstrate the potential to develop a low-cost, durable, and efficient water-splitting system that meets the DOE 2026 and 2031 cost targets for hydrogen production.
08 HYDROGEN↗
Development of CMOS Sensors for HEP with a US-based foundry
We will present a program to establish the first development and manufacturing of HEP-specific sensors monolithically integrated into a standard CMOS process using a US-based foundry. In collaboration with several US universities the project aims to develop Monolithic Active Pixel Sensors (MAPS) designs implemented in the 90 nm technology node, including simple test structures and multi-pixel arrays, and monolithic CMOS sensors with readout integrated circuits, perform detailed characterization of the detector prototypes and quantify their performance for HEP applications.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
Integrated Solar-Driven Device with a Front Surface Semitransparent Catalysts for Unassisted CO 2 Reduction
Monolithic integrated photovoltaic-driven electrochemical (PV-EC) artificial photosynthesis is reported for unassisted CO 2 reduction. The PV-EC structures employ triple junction photoelectrodes with a front mounted semitransparent catalyst layer as a photocathode. The catalyst layer is comprised of an array of microscale triangular metallic prisms that redirect incoming light toward open areas of the photoelectrode to reduce shadow losses. Full wave electromagnetic simulations of the prism array (PA) structure guide optimization of geometries and length scales. An integrated device is constructed with Ag catalyst prisms covering 35% of the surface area. The experimental device has close to 80% of the transmittance with a catalytic surface area equivalent 144% of the glass substrate area. Experimentally this photocathode demonstrates a direct solar-to-CO conversion efficiency of 5.9% with 50 h stability. Selective electrodeposition of Cu catalysts onto the surface of the Ag triangular prisms allows CO2 conversion to higher value products enabling demonstration of a solar-to-C 2+ product efficiency of 3.1%. This design featuring structures that have a semitransparent catalyst layer on a PV-EC cell is a general solution to light loss by shadowing for front surface mounted metal catalysts, and opens a route for the development of artificial photosynthesis based on this scalable design approach.
14 SOLAR ENERGY↗
Triple integrated laser – thyristor
A triple laser – thyristor, i. e., a semiconductor laser with three emitting sections monolithically integrated with an electronic switch (thyristor) is experimentally studied. For comparison, the output characteristics of single and double laser – thyristors are presented. It is shown that the functional integration of a laser with a thyristor in one heterostructure allows the laser to efficiently operate in a pulsed regime (output power ∼50 W), the use of vertical integration of two laser sections increases the power to ∼90 W, and the integration of three laser sections makes it possible to increase the output optical power to ∼120 W with all other conditions being the same. (paper)
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
All-Epitaxial Integration of Long-Wavelength Infrared Plasmonic Materials and Detectors for Enhanced Responsivity
Here, infrared detectors using monolithically integrated doped semiconductor “designer metals” are proposed and experimentally demonstrated. We leverage the “designer metal” groundplanes to form resonant cavities with enhanced absorption tuned across the long-wave infrared (LWIR). Detectors are designed with two target absorption enhancement wavelengths: 8 and 10 μm. The core of our detectors are quantum-engineered LWIR type-II superlattice p-i-n detectors with total thicknesses of only 1.42 and 1.80 μm for the 8 and 10 μm absorption enhancement devices, respectively. Our 8 and 10 μm structures show peak external quantum efficiencies of 45 and 27%, which are 4.5× and 2.7× enhanced, respectively, compared to control structures. We demonstrate the clear advantages of this detector architecture, both in terms of ease of growth/fabrication and enhanced device performance. The proposed architecture is absorber- and device-structure agnostic, much thinner than state-of-the-art LWIR T2SLs, and offers the opportunity for the integration of low dark current LWIR detector architectures for significant enhancement of IR detectivity.
42 ENGINEERING↗
Nanophotonic waveguide chip-to-world beam scanning
A seamless chip-to-world photonic interface enables broad advancements in optical ranging, display, communication, computation and quantum information science. The ideal solution enables two-dimensional scanning of a diffraction-limited beam from anywhere on a photonic integrated circuit to a large number of resolvable spots. Current beam-scanning technologies are limited by a fundamental trade-off: photonic-integrated-circuits with diffractive optics offer scalability but have poor mode quality, whereas inertially limited micromechanical scanners provide high-quality beams but lack scalable integration. Here we report a photonic ski-jump—a nanoscale waveguide monolithically integrated on a piezoelectric cantilever—to overcome these limitations. It passively curls ~90° out-of-plane within a less-than-0.1 mm 2 footprint, emits a submicrometre, broadband diffraction-limited beam, and exhibits kilohertz-rate mechanical resonances with quality factors of over 10,000. Fabricated in a volume complementary metal–oxide–semiconductor (CMOS) foundry, our device enables scalable two-dimensional beam scanning. Driven on-resonance at CMOS-level voltages, it achieves a footprint-adjusted spot rate of 68.6 mega spots s –1 mm–², exceeding state-of-the-art micro-electro-mechanical systems mirrors by more than 50-fold, which is sufficient for one million pixels at 100 Hz from an approximately 1.5 mm diameter footprint. We demonstrate full-colour image and video projection, and single-photon initialization and readout from silicon vacancy centres in diamond. Finally, by demonstrating uniformity across a 64 ski-jump array, we establish a pathway to achieving greater than one gigaspot resolution at kilohertz rates within a sub-5-cm-diameter footprint, creating a seamless optical pipeline between integrated photonic processors and the free-space world.
Displays↗
Erbium quantum memory platform with long optical coherence via back-end-of-line deposition on foundry-fabricated photonics
Realizing scalable quantum interconnects necessitates the integration of solid-state quantum memories with foundry photonics processes. While prior photonic integration efforts have relied upon specialized, laboratory-scale fabrication techniques, this work demonstrates the monolithic integration of a quantum memory platform with low-loss foundry photonic circuits via back-end-of-line deposition. We deposited thin films of titanium dioxide (TiO 2 ) doped with erbium (Er) onto silicon nitride nanophotonic waveguides and studied Er optical coherence at subkelvin temperatures with photon echo techniques. Furthermore, we suppressed optical dephasing through ex-situ oxygen annealing and optimized measurement conditions, which yielded an optical coherence time of 64 μs (a 5-kHz homogeneous linewidth) and slow spectral diffusion of 27 kHz over 4 ms, results that are comparable to state-of-the-art Er nanophotonic devices. Combined with second-long electron spin lifetimes and demonstrated electrical control of Er emission, our findings establish Er:TiO 2 on foundry photonics as a manufacturable platform for ensemble and single-ion quantum memories.
Electro-optic effects↗
Integration and Packaging
Vertically integrated (3D) combinations of sensors and electronics provide the ability to fabricate small, fine pitch pixels with very small total capacitance monolithically integrated with complex circuitry. The small capacitance, enabled by the fine pixel pitch and low interconnect capacitance available in 3D hybrid bonding, provides excellent signal/noise with moderate power. This combination enables fabrication of integrated sensors and electronics with both excellent position and time resolution. In this white paper a discussion will be presented on 3D integration advantages, ongoing projects and prospects in high energy physics and beyond.
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
Giant energy storage and power density negative capacitance superlattices
Dielectric electrostatic capacitors, because of their ultrafast charge-discharge, are desirable for high-power energy storage applications. Along with ultrafast operation, on-chip integration can enable miniaturized energy storage devices for emerging autonomous microelectronics and microsystems. Moreover, state-of-the-art miniaturized electrochemical energy storage systems-microsupercapacitors and microbatteries-currently face safety, packaging, materials and microfabrication challenges preventing on-chip technological readiness, leaving an opportunity for electrostatic microcapacitors. Here, in this study, we report record-high electrostatic energy storage density (ESD) and power density, to our knowledge, in HfO 2 -ZrO 2 -based thin film microcapacitors integrated into silicon, through a three-pronged approach. First, to increase intrinsic energy storage, atomic-layer-deposited antiferroelectric HfO 2 -ZrO 2 films are engineered near a field-driven ferroelectric phase transition to exhibit amplified charge storage by the negative capacitance effect, which enhances volumetric ESD beyond the best-known back-end-of-the-line-compatible dielectrics (115 J cm -3 ). Second, to increase total energy storage, antiferroelectric superlattice engineering scales the energy storage performance beyond the conventional thickness limitations of HfO 2 -ZrO 2 -based (anti)ferroelectricity (100-nm regime). Third, to increase the storage per footprint, the superlattices are conformally integrated into three-dimensional capacitors, which boosts the areal ESD nine times and the areal power density 170 times that of the best-known electrostatic capacitors: 80 mJ cm -2 and 300 kW cm -2 , respectively. This simultaneous demonstration of ultrahigh energy density and power density overcomes the traditional capacity-speed trade-off across the electrostatic-electrochemical energy storage hierarchy. Furthermore, the integration of ultrahigh-density and ultrafast-charging thin films within a back-end-of-the-line-compatible process enables monolithic integration of on-chip microcapacitors, which can unlock substantial energy storage and power delivery performance for electronic microsystems.
25 ENERGY STORAGE↗
Integrated dispersion compensated mode-locked quantum dot laser
Quantum dot lasers are excellent on-chip light sources, offering high defect tolerance, low threshold, low temperature variation, and high feedback insensitivity. Yet a monolithic integration technique combining epitaxial quantum dot lasers with passive waveguides has not been demonstrated and is needed for complex photonic integrated circuits. We present here, for the first time to our knowledge, a monolithc offset quantum dot integration platform that permits formation of a laser cavity utilizing both the robust quantum dot active region and the versatility of passive GaAs waveguide structures. This platform is substrate agnostic and therefore compatible with the quantum dot lasers directly grown on Si. As an illustration of the potential of this platform, we designed and fabricated a 20 GHz mode-locked laser with a dispersion-engineered on-chip waveguide mirror. Due to the dispersion compensation effect of the waveguide mirror, the pulse width of the mode-locked laser is reduced by a factor of 2.8.
Zhang, Zeyu (ORCID:0000000271576272)↗
A Sub-Threshold Low-Power Integrated Bandpass Filter for Highly-Integrated Spectrum Analyzers
Low-power analog filter banks provide frequency analysis with minimal power and space requirements, making them viable solutions for integrated remote audio- and vibration-sensing applications. Compared with their digital counterparts, analog filter banks are better suited to achieve the lower power consumption necessary for IoT applications. In this work, the design and implementation of a sub-threshold complementary metal-oxide semiconductor (CMOS) integrated low-power tunable bandpass filter channel for signal spectrum analysis and signal discrimination is presented, including performance improvements to stability and precise matching between filter stages. The 8 th -order filter channel achieves an effective Q-factor of 4.5 and dynamic range of 60 dB, has an operational frequency range from 2 kHz to 100 kHz, and consumes 256 µW nominally at the highest center frequency. An integrated analog Gm-C filter topology is selected for this application. Functionally, the high-Q bandpass filter transfer function is implemented via four cascaded 2 nd -order filter cells and is fabricated in 130-nm 1.2-V CMOS technology, making it suitable for use in monolithic integrated spectral analysis (MISA) applications.
Long, Gavin↗
System-on-Chip approach microwave diagnostics development for burning plasma
System-on-chip (SoC) millimeter wave integrated circuit technology has been developed and employed in chip heterodyne radiometers in Electron Cyclotron Emission Imaging (ECEI) and Microwave Imaging Reflectometer (MIR) on the DIII-D tokamak for 2D electron temperature and density fluctuation diagnostics. The W-band (75-110 GHz) ECEI system has been employed with 20 poloidal horn receiver modules with customized monolithic integrated circuit chips and internal local oscillator coupling path. The new SoC approach demonstrates > 30 dB additional gain on the receiver and 95% electronics noise suppression compared to the previous Schottky diode mixer array . An F-band (110-140 GHz) receiver chip has been developed to measure MHD and turbulence behavior on the DIII-D high-field side, such as Alfven eigenmodes. Furthermore, it can image pedestal structure evolution on fusion facilities with stronger magnetic fields, such as ASDEX-U, EAST, HL-2M, and LHD. The F-band chip performance has been tested in the laboratory. Also, V-band (55-75 GHz) transmitter and receiver modules (55-75 GHz) have been developed for DIII-D and NSTX-U Furthermore, microwave Imaging Reflectometer (MIR) application suitability for 2D density fluctuation imaging on the pedestal region.
70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗