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At least 37 records · Page 2

Nano-indentation and laser-induced damage testing in optical multilayer-dielectric gratings [Nanomechanics and laser-induced damage in optical multilayer dielectric gratings]

Here, we demonstrate how a nanomechanical test can be used to generate metrics to complement laser-induced–damage testing (LIDT) measurements and show that differences in optical performance of the gratings (arising from changes in cleaning process and/or fabrication methods) can be related to their mechanical reliability. Data are presented on LIDT measurements in diffractive gratings of silica deposited on optical multilayers. The nano-indentation response of the diffraction gratings is measured in a new mode that allows for the extraction of a measurable metric characterizing the brittleness of the gratings, as well as their ductility. We show that lower LIDT’s are positively correlated with an increased grating brittleness, and therefore identify a nanomechanical approach to describe LIDT’s. We present extensive numerical simulations of nano-indentation tests and identify different deformation modes including stretching, shear concentration, and bending as precursors to mechanical failure in the nano-indentation test. The effects of geometrical inhomogeneities on enhanced stress generation in these gratings are specifically examined and addressed.

36 MATERIALS SCIENCE↗

Modulating Hole Transport in Multilayered Photocathodes with Derivatized p-Type Nickel Oxide and Molecular Assemblies for Solar-Driven Water Splitting

We report here a new photocathode composed of a bi-layered doped NiO film topped by a macro-mesoporous ITO (ioITO) layer with molecular assemblies attached to the ioITO surface. The NiO film containing a 2% K+ doped NiO inner layer and a 2% Cu2+ doped NiO outer layer provides sufficient driving force for hole transport after injection to NiO by the molecular assembly. The tri-layered oxide, NiK0.02O | NiCu0.02O | ioITO, sensitized by a ruthenium polypyridyl dye and functionalized with a nickel-based hydrogen evolution catalyst, outperforms its counterpart, NiO | NiO | ioITO, in photocatalytic hydrogen evolution from water over a period of several hours with a Faradaic yield of ~90%.

Shan, Bing↗

Ab initio modeling of zincblende AlN layer in Al-AlN-TiN multilayers

An unusual growth mechanism of metastable zincblende AlN thin film by diffusion of nitrogen atoms into Al lattice is established. Using first-principles density functional theory, we studied the possibility of thermodynamic stability of AlN as a zincblende phase due to epitaxial strains and interface effect, which fails to explain the formation of zincblende AlN. We then compared the formation energetics of rocksalt and zincblende AlN in fcc Al through direct diffusion of nitrogen atoms to Al octahedral and tetrahedral interstitials. The formation of a zincblende AlN thin film is determined to be a kinetically driven process, not a thermodynamically driven process.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Diagnosis of Factors Impacting Yield in Multilayer Devices for Superconducting Electronics

The ability to localize defects in order to understand failure mechanisms in complex superconducting electronics circuits, while operating at low temperature, does not yet exist. Here, this work applies thermally-induced voltage alteration (TIVA), to a biased superconducting electronics (SCE) circuit at ambient temperature. TIVA is a commonly used, laser-based failure analysis technique developed for silicon-based microelectronics. The non-operational circuit consisted of an arithmetic logic unit (ALU) in a high-frequency test bed designed at HYPRES and fabricated by MIT Lincoln Laboratory using their SFQ5ee process. Localized TIVA signals were correlated with reflected light images at the surface, and these sites were further investigated by scanning electron microscopy imaging of focused ion-beam cross-sections. The areas investigated, where prominent TIVA signals were observed, showed seams in the Nb wiring layers at contacts to Josephson junctions or inductors and/or disrupted junction morphologies. Finally, these results suggest that the TIVA technique can be used at ambient temperature to diagnose fabrication defects that may cause low temperature circuit failure.

36 MATERIALS SCIENCE↗