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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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21 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1972

Silicon solar cell development and radiation effects study for low temperature and low illumination intensity operation, volume 2

The results are presented of a study to determine the effect of in-situ proton irradiation upon low temperature, low intensity performance of several cell types. The cell types were selected in an attempt to distinguish variations in temperature-dependent radiation resistance which could be attributed to the n-p or p-n structure, diffused or implanted junctions, crucible grown or float-zone type base material, and high or low base resistivity. The results indicate that while expected variations of performance occur at room temperature, all cell types degrade more or less similarly at lower temperatures with normalized degradation becoming increasingly rapid as temperature is reduced. Recommendations for an optimized cell for Jupiter probe use are included along with a definition of the testing required on these cells to insure good performance characteristics.

Kirkpatrick, A. R.↗
NASA NTRS1972

JPL lithium doped solar cell development program

One of the most significant problems encountered in the use of silicon solar cells in space is the sensitivity of the device to electron and proton radiation exposure. The p-diffused-into-n-base solar cells were replaced with the more radiation tolerant n-diffused-into-p-base solar cells. Another advancement in achieving greater radiation tolerance was the discovery that the addition of lithium to n-base silicon resulted in what appeared to be annealing of radiation-induced defects. This phenomenon is being exploited to develop a high efficiency radiation resistant lithium-doped solar cell. Lithium-doped solar cells fabricated from oxygen-lean and oxygen-rich silicon were obtained with average initial efficiencies of 11.9% at air mass zero and 28 C, as compared to state-of-the-art n-p cells fabricated from 10 ohm cm silicon with average efficiencies of 11.3% under similar conditions. Lithium-doped cells demonstrated the ability to withstand three to five times the fluence of 1-MeV electrons before degrading to a power equivalent to state-of-the-art solar cells. The principal investigations are discussed with respect to fabrication of high efficiency radiation resistant lithium-doped cells, including starting material, p-n junction diffusion, lithium source introduction, and lithium diffusion.

Berman, P. A.↗
NASA NTRS2000

p-n Junction Diodes Fabricated on Si-Si/Ge Heteroepitaxial Films

A set of photolithographic masks was designed for the fabrication of diodes in the Si-Si/Ge material system. Fabrication was performed on samples obtained from two different wafers: (1) a complete HBT structure with an n (Si emitter), p (Si/Ge base), and an n/n+ (Si collector/sub-collector) deposited epitaxially (MBE) on a high resistivity p-Si substrate, (2) an HBT structure where epitaxial growth was terminated after the p-type base (Si/Ge) layer deposition. Two different process runs were attempted for the fabrication of Si-Si/Ge (n-p) and Si/Ge-Si (p-n) junction diodes formed between the emitter-base and base-collector layers, respectively, of the Si-Si/Ge-Si HBT structure. One of the processes employed a plasma etching step to expose the p-layer in the structure (1) and to expose the e-layer in structure (2). The Contact metallization used for these diodes was a Cu-based metallization scheme that was developed during the first year of the grant. The plasma-etched base-collector diodes on structure (2) exhibited well-behaved diode-like characteristics. However, the plasma-etched emitter-base diodes demonstrated back-to-back diode characteristics. These back-to back characteristics were probably due to complete etching of the base-layer, yielding a p-n-p diode. The deep implantation process yielded rectifying diodes with asymmetric forward and reverse characteristics. The ideality factor of these diodes were between 1.6 -2.1, indicating that the quality of the MBE grown epitaxial films was not sufficiently high, and also incomplete annealing of the implantation damage. Further study will be conducted on CVD grown films, which are expected to have higher epitaxial quality.

Das, K.↗