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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

Comment on 'Observation of intrinsic bistability in resonant-tunneling structures'

It is suggested that the intrinsic bistability observed by Goldman et al. (1987) occurred not because of charging of the well, as is claimed, but because of oscillations in the negative-resistance region. A typical I-V curve for a double-barrier resonant-tunneling (DBRT) diode which is known to be oscillating is presented. In a reply to this comment, Goldman et al. show that the series resistance (of about 100 ohms) in Sollner's sample leads to extrinsic, rather than intrinsic, bistability. It is furthermore suggested that the mere presence of an oscillation does not in itself exclude intrinsic bistability in a DBRT structure. It is also noted that the intrinsic bistability and buildup of negative charge-space in a DBRT structure well has been demonstrated experimentally by Payling et al. (1987).

Sollner, T. C. L. G.↗
NASA NTRS1984

Low noise tuned amplifier

A bandpass amplifier employing a field effect transistor amplifier first stage is described with a resistive load either a.c. or directly coupled to the non-inverting input of an operational amplifier second stage which is loaded in a Wien Bridge configuration. The bandpass amplifier may be operated with a signal injected into the gate terminal of the field effect transistor and the signal output taken from the output terminal of the operational amplifier. The operational amplifier stage appears as an inductive reactance, capacitive reactance and negative resistance at the non-inverting input of the operational amplifier, all of which appear in parallel with the resistive load of the field effect transistor.

Kleinberg, L. L.↗
NASA NTRS1981

On a theory of temporal fluctuations in the electrostatic potential structures associated with auroral arcs

A possible mechanism is presented for the generation of large-amplitude temporal fluctuations in the structure of the electron energization region associated with auroral arcs. The mechanism is based on the observation that the auroral arc system resembles a laboratory circuit consisting of the series connection of battery, resistance and a forward biased diode containing collisionless plasma in which large-amplitude relaxation oscillations are sometimes observed to be superimposed on the steady-state current. It is shown that in both the laboratory and auroral systems, in which a localized auroral arc dynamo, the ionosphere and the electron energization region are involved, the oscillations are controlled by the times for ions and electrons to traverse the acceleration region, which also characterize the low- and high-frequency structure of the fluctuating waveform. It is demonstrated that a plausible one-dimensional double-layer model of the auroral arc acceleration region exhibits the dynamic negative resistance necessary for the generation of oscillations by the present mechanism. Finally, consideration is given to two kinds of auroral phenomena which might be associated with the mechanism: the 10-Hz quasi-periodic flickering aurora and 10-Hz modulations in the intensity of electrostatic hydrogen cyclotron waves.

Silevitch, M. B.↗
NASA NTRS1970

Constant current load matches impedances of electronic components

Constant current load with negative resistance characteristics actively compensates for impedance variations in circuit components. Through a current-voltage balancing operation the internal impedance of the diodes is maintained at a constant value. This constant current load circuit can be used in simple telemetry systems.

Alexander, R. M.↗
NASA NTRS1971

Characteristics of NbN Dayem bridges

NbN Dayem bridge characteristics, discussing negative resistance region, self induced subharmonic current steps, temperature dependence and microwave radiation effects

Blaugher, R. D.↗
NASA NTRS1971

Micropower active filters for vhf applications

High Q micropower filters for VHF applications based on conditionally stable negative resistance operation, describing computer-aided design, construction and performance

Gaertner, W. W.↗
NASA NTRS1974

Ultra-stable oscillator with complementary transistors

A high frequency oscillator, having both good short and long term stability, is formed by including a piezoelectric crystal in the base circuit of a first bi-polar transistor circuit, the bi-polar transistor itself operated below its transitional frequency and having its emitter load chosen so that the input impedance, looking into the base thereof, exhibits a negative resistance in parallel with a capacitive reactance. Combined with this basic circuit is an auxiliary, complementary, second bi-polar transistor circuit of the same form with the piezoelectric crystal being common to both circuits. By this configuration small changes in quiescent current are substantially cancelled by opposite variations in the second bi-polar transistor circuit, thereby achieving from the oscillator a signal having its frequency of oscillation stable over long time periods as well as short time periods.

Kleinberg, L. L.↗
NASA NTRS1974

Millimeter wave pumped parametric amplifier

A negative resistance parametric amplifier is reported that employs a discrete varactor diode for high frequency pump excitation in the millimeter wave range.

Dickens, L. E.↗
NASA NTRS1975

The solid-state Ku-band power amplifier

A survey of IMPATT diodes and negative resistance amplifiers is presented. The first phase of the amplifier effort is discussed in which a single diode reflection amplifier delivering 0.5 watt at 15 GHz with 10-dB gain over a 1-GHz band was developed. The design of a dominant mode resonant combiner is described along with the characterization of the IMPATT diodes. Results are given on the complete amplifier and on the thermal and graceful failure characteristics of the unit.

Geller, B. D.↗
NASA NTRS1974

A high performance line regulator

The present work describes the design of a 10-kHz, 500-W switching buck type regulator used as a line regulator in a power conditioner for an ion thruster. The frequency response of the switching regulator had to be raised beyond the resonant frequency of the output LC filter to produce a positive total network impedance and prevent negative resistance oscillation. Analysis of this stability problem is given.

Cardwell, G. I.↗
NASA NTRS1975

Relationships among classes of self-oscillating transistor parallel inverters

It recently has been shown in the literature that many dc-to-square-wave parallel inverters which are widely used in power-conditioning applications can be grouped into one of two families. Each family is characterized by an equivalent RLC network. Based on this approach, a classification procedure is presented for self-oscillating parallel inverters which makes evident natural relationships which exist between various inverter configurations. By utilizing concepts from the basic theory of negative resistance oscillators and the principle of duality as applied to nonlinear networks, a chain of relationships is established which enables a methodical transfer of knowledge gained about one family of inverters to any of the other families in the classification array.

Wilson, T. G.↗
NASA NTRS1977

UHF/microwave oscillator/amplifier

Circuit uses tunnel diode as negative resistance and bipolar transistor as an active device in conjunction with resistors and capacitors. Transistor provides inductance required to produce oscillation and tuning. Output is taken from transistor collector and avoids unwanted characteristics of two-terminal oscillator/amplifier.

Kleinberg, L. L.↗
NASA NTRS1982

Fabrication techniques for superconducting readout loops

Procedures for the fabrication of superconducting readout loops out of niobium on glass substrates were developed. A computer program for an existing fabrication system was developed. Both positive and negative resist procedures for the production of the readout loops were investigated. Methods used to produce satisfactory loops are described and the various parameters affecting the performance of the loops are analyzed.

Payne, J. E.↗
NASA NTRS1987

Some dynamical properties of very strong double layers in a triple plasma device

Dynamical properties of very strong double layers seen in a differentially pumped triple plasma device are reported. These double layers are V-shaped. The following findings are discussed: (1) Disruptions in the double layer potential and in the plasma current occur when an inductance is placed in series with the bias supply between the sources in the external circuit. These disruptions, which can be highly periodic, are the result of a negative resistance region. (2) When reactances in the circuit are minimized, the double layer exhibits a jitter motion in position approximately equal to the double layer thickness. (3) When the bias between the sources is rapidly turned on, the initial phase in the double layer formation is the occurrence of a constant electric field for the first few microseconds. First the apparatus used in all of the work is discussed and then each of the three phenomena are considered.

Carpenter, T.↗
NASA NTRS1988

Grid oscillators

Loading a two-dimensional grid with active devices offers a means of combining the power of solid-state oscillators in the microwave and millimeter-wave range. The grid structure allows a large number of negative resistance devices to be combined. This approach is attractive because the active devices do not require an external locking signal, and the combining is done in free space. In addition, the loaded grid is a planar structure amenable to monolithic integration. Measurements on a 25-MESFET grid at 9.7 GHz show power-combining and frequency-locking without an external locking signal, with an ERP of 37 W. Experimental far-field patterns agree with theoretical results obtained using reciprocity.

Popovic, Zorana B.↗