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Results for “OXIDE FILM”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Effects of ion adsorption on graphene oxide films and interfacial water structure: A molecular-scale description

Herein we discuss graphene oxide as a promising, emerging separation material, as it is durable, dispersible in water, and has naturally forming functional groups. Bulk studies using graphene oxide flakes have demonstrated impressive metal adsorption. However, little interfacial information about water and metal organization near graphene oxide is available. A mechanistic understanding of water and ions interactions with graphene oxide films is critical toward advanced separations, including improved sorption efficiency and membrane regeneration. We study metal ion and local water organization near graphene oxide thin films formed at the air/water interface. These films are not typical membranes and allow us to determine nanoscale information about the graphene oxide-water interface. We accomplish this with x-ray reflectivity (XR), x-ray fluorescence near total reflection (XFNTR), and vibrational sum frequency generation spectroscopy (SFG). These interface-specific techniques provide the electron density profile normal to the interface, number of adsorbed ions, and information about the orientational ordering and hydrogen-bonding network of interfacial water, respectively. Via XFNTR and SFG, we find that trivalent yttrium ions preferentially adsorb to graphene oxide and affect its structure, compared to divalent strontium and monovalent cesium ions. Two different interfacial water populations can be described, based on their hydrogen bonding strength, and the adsorbed ions affect these populations differently. These results provide fundamental information about ion and water organization at the interface and help address the large computational-experimental agreement gap for graphene oxide systems. Additionally, they are relevant for improved soft-scaffold graphene oxide membranes and downstream applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Mesoscopic theory of defect ordering–disordering transitions in thin oxide films

Abstract Ordering of mobile defects in functional materials can give rise to fundamentally new phases possessing ferroic and multiferroic functionalities. Here we develop the Landau theory for strain induced ordering of defects (e.g. oxygen vacancies) in thin oxide films, considering both the ordering and wavelength of possible instabilities. Using derived analytical expressions for the energies of various defect-ordered states, we calculated and analyzed phase diagrams dependence on the film-substrate mismatch strain, concentration of defects, and Vegard coefficients. Obtained results open possibilities to create and control superstructures of ordered defects in thin oxide films by selecting the appropriate substrate and defect concentration.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1992

Ellipsometric study of oxide films formed on LDEF metal samples

The optical constants of samples of six different metals (Al, Cu, Ni, Ta, W, and Zr) exposed to space on the Long Duration Exposure Facility (LDEF) were studied by variable angle spectroscopic ellipsometry. Measurements were also carried out on portions of each sample which were shielded from direct exposure by a metal bar. A least-squares fit of the data using an effective medium approximation was then carried out, with thickness and composition of surface films formed on the metal substrates as variable parameters. The analysis revealed that exposed portions of the Cu, Ni, Ta, and Zr samples are covered with porous oxide films ranging in thickness from 500 to 1000 A. The 410 A thick film of Al2O3 on the exposed Al sample is practically free of voids. Except for Cu, the shielded portions of these metals are covered by thin non-porous oxide films characteristic of exposure to air. The shielded part of the Cu sample has a much thicker porous coating of Cu2O. The tungsten data could not be analyzed.

Franzen, W.↗
NASA NTRS1986

Method to prepare oxide films

This invention pertains to a method for producing metal oxide films characterized by the fact that the metal elements constituting the main metal alloys contain at least one kind of transition element, and that the metal elements which constitute said metal alloy are thin films of barium and titanium in almost the same mol ratio.

Hirota, T.↗
DOE OSTI2020

Phase-Exchange-Driven Wake-Up and Fatigue in Ferroelectric Hafnium Zirconium Oxide Films

Ferroelectric hafnium zirconium oxide holds great promise for a broad spectrum of complementary metal–oxide–semiconductor (CMOS) compatible and scaled microelectronic applications, including memory, low-voltage transistors, and infrared sensors, among others. An outstanding challenge hindering the implementation of this material is polarization instability during field cycling. Herein, the nanoscale phenomena contributing to both polarization fatigue and wake-up are reported. Using synchrotron X-ray diffraction, the conversion of non-polar tetragonal and polar orthorhombic phases to a non-polar monoclinic phase while field cycling devices comprising noble metal contacts is observed. This phase exchange accompanies a diminishing ferroelectric remanent polarization and provides device-scale crystallographic evidence of phase exchange leading to ferroelectric fatigue in these structures. A reduction in the full width at half-maximum of the superimposed tetragonal (101) and orthorhombic (111) diffraction reflections is observed to accompany wake-up in structures comprising tantalum nitride and tungsten electrodes. Combined with polarization and relative permittivity measurements, the observed peak narrowing and a shift in position to lower angles is attributed, in part, to a phase exchange of the non-polar tetragonal to the polar orthorhombic phase during wake-up. These results provide insight into the role of electrodes in the performance of hafnium oxide-based ferroelectrics and mechanisms driving wake-up and fatigue, and demonstrate a non-destructive means to characterize the phase changes accompanying polarization instabilities.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1981

Effect of oxide films on hydrogen permeability of candidate Stirling engine heater head tube alloys

The effect of oxide films developed in situ from CO/CO2 doped hydrogen on high pressure hydrogen permeability at 820 C was studied on N-155, A-286, IN 800, 19-9DL, Nitronic 40, HS-188, and IN 718 tubing in a Stirling materials simulator. The hydrogen permeability decreased with increasing dopant levels of CO or CO2 and corresponding decreases in oxide porosity. Minor reactive alloying elements strongly influenced permeability. At high levels of CO or CO2, a liquid oxide formed on alloys with greater than 50 percent Fe. This caused increased permeability. The oxides formed on the inside tube walls were analyzed and their effective permeabilities were calculated.

Schuon, S. R.↗
NASA NTRS1988

Deposition of vanadium oxide films by direct-current magnetron reactive sputtering

It is demonstrated here that thin films of vanadium oxide can be deposited at modest substrate temperatures by dc reactive sputtering from a vanadium target in an O2-Ar working gas using a planar magnetron source. Resistivity ratios of about 5000 are found between a semiconductor phase with a resistivity of about 5 Ohm cm and a metallic phase with a resistivity of about 0.001 Ohm cm for films deposited onto borosilicate glass substrates at about 400 C. X-ray diffraction shows the films to be single-phase VO2 with a monoclinic structure. The VO2 films are obtained for a narrow range of O2 injection rates which correspond to conditions where cathode poisoning is just starting to occur.

Kusano, E.↗
NASA NTRS1992

Ambient-Temperature Sputtering Of Composite Oxide Films

Technique for deposition of homogeneous films of multicomponent oxides on substrates at ambient temperature based on sequential sputter deposition of individual metal components, as alternating ultra-thin layers, from multiple targets. Substrates rotated over sputtering targets of lead, zirconium, and titanium. Dc-magnetron sputtering of constituent metals in reactive ambient of argon and oxygen leads to formation of the respective metal oxides intermixed on extremely fine scale in desired composition. Compatible with low-temperature microelectronic processing.

Thakoor, Sarita↗
DOE OSTI2023

Direct Visualization of Charge Migration in Bilayer Tantalum Oxide Films by Multimodal Imaging

Inspired by biological neuromorphic computing, artificial neural networks based on crossbar arrays of bilayer tantalum oxide memristors have shown to be promising alternatives to conventional complementary metal-oxide-semiconductor (CMOS) architectures. In order to understand the driving mechanism in these oxide systems, tantalum oxide films are resistively switched by conductive atomic force microscopy (C-AFM), and subsequently imaged by kelvin probe force microscopy (KPFM) and spatially resolved time-of-flight secondary ion mass spectrometry (ToF-SIMS). These workflows enable induction and analysis of the resistive switching mechanism as well as control over the resistively switched region of the film. In this work it is shown that the resistive switching mechanism is driven by both current and electric field effects. Reversible oxygen motion is enabled by applying low (<1 V) electric fields, while high electric fields generate irreversible breakdown of the material (>1 V). Fully understanding oxygen motion and electrical effects in bilayer oxide memristor systems is a fundamental step toward the adoption of memristors as a neuromorphic computing technology.

36 MATERIALS SCIENCE↗
NASA NTRS1999

The Effect of Interface Roughness and Oxide Film Thickness on the Inelastic Response of Thermal Barrier Coatings to Thermal Cycling

The effects of interfacial roughness and oxide film thickness on thermally-induced stresses in plasma-sprayed thermal barrier coatings subjected to thermal cycling are investigated using the recently developed higher-order theory for functionally graded materials. The higher-order theory is shown to be a viable alternative to the finite-element approach, capable of modeling different interfacial roughness architectures in the presence of an aluminum oxide layer and capturing the high stress gradients that occur at the top coat/bond coat interface. The oxide layer thickness is demonstrated to have a substantially greater effect on the evolution of residual stresses than local variations in interfacial roughness. Further, the location of delamination initiation in the top coat is predicted to change with increasing oxide layer thickness. This result can be used to optimize the thickness of a pre-oxidized layer introduced at the top coat/bond coat interface in order to enhance TBC durability as suggested by some researchers. The results of our investigation also support a recently proposed hypothesis regarding delamination initiation and propagation in the presence of an evolving bond coat oxidation, while pointing to the importance of interfacial roughness details and specimen geometry in modeling this phenomenon.

Pindera, Marek-Jerzy↗