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The use of positive bevels for P-I-N mesa structures to achieve high voltages is described. The technique of glass passivation for mesa structures is described. The utilization of high energy radiation to control the lifetime of carriers in silicon is reported as a means to achieve fast recovery times. Characterization data is reported and is in agreement with design concepts developed for power diodes.
An analysis of directly and externally modulated fiberoptic links is presented. The theoretical analysis is based on the signal flow diagram of the interface circuits to the laser diode, Mach-Zehnder electro-optic modulator, and p-i-n photodiode. System parameters such as gain, noise figure, two-tone intermodulation distortion, and spurious free and compression dynamic range are expressed as a function of frequency and operating point of the laser and external modulator. Two directly and externally modulated fiber-optic links were designed and fabricated to verify the analytical models. The direct modulation FO link was developed at the Ku-band (11.6-12.4 GHz), whereas the external modulation link was at L-band (875-925 MHz). Spurious-free dynamic ranges of 95.8 dB-Hz exp 2/3 and 113 dB-Hz exp 2/3, respectively, were achieved. The predictions based on the analytical models match the measured results.
The proton induced charge deposition in a well characterized silicon P-i-N focal plane array is analyzed with Monte Carlo based simulations. These simulations include all physical processes, together with pile up, to accurately describe the experimental data. Simulation results reveal important high energy events not easily detected through experiment due to low statistics. The effects of each physical mechanism on the device response is shown for a single proton energy as well as a full proton space flux.
A variety of silicon carbide (SiC) detectors have been developed to study the sensitivity of SiC ultraviolet (UV) detectors, including Schottky photodiodes, p-i-n photodiodes, avalanche photodiodes (APDs), and single photon-counting APDs. Due to the very wide bandgap and thus extremely low leakage current, Sic photo-detectors showed excellent sensitivity. The specific detectivity, D*, of SiC photodiodes are orders of magnitude higher than that of their competitors, such as Si photodiodes, and comparable to the D* of photomultiplier tubes (PMTs). To pursue the ultimate detection sensitivity, SiC APDs and single photon-counting avalanche diodes (SPADs) have also been fabricated. By operating the SiC APDs at a linear mode gain over 10(exp 6), SPADs in UV have been demonstrated. SiC UV detectors have great potential for use in solar blind UV detection and biosensing. Moreover, SiC detectors have excellent radiation hardness and high temperature tolerance which makes them ideal for extreme environment applications such as in space or on the surface of the Moon or Mars.
The effects of irradiating Ga(0.47)In(0.53)As p-i-n junctions with 1 MeV electrons were measured using Deep Level Transient Spectroscopy (DLTS) and both dark and illuminated (1 sun, air mass zero (AM0)) current-voltage (I-V) measurements. The I-V measurements were made over the range 100K less than T less than 350K. Temperature coefficients of the Ga(0.47)In(0.53)As photovoltaic parameters are presented which follow the same general behavior as other solar cell materials (e.g. Si and GaAs). Fits of the dark I-V data to the two term diode equation before irradiation were satisfactory, yielding an estimated band-gap energy of 0.79 eV. The recombination component of the dark current was found to increase linearly with fluence. DLTS detected two radiation-induced defect levels one shallow (E(sub c)-0.10 eV) and one near mid-gap (E(sub c)-0.29 eV), and it is the near mid-gap level which is expected to be the cause of the dark current increase. The radiation-induced degradation of the open circuit voltage is shown to be accurately predicted from the dark I-V measurements. The degradation of the open circuit voltage dominated the radiation response of the photovoltaic parameters while the short circuit current was only moderately degraded. This behavior is qualitatively explained in terms of the base thickness and dopant level. Appropriate changes in the device structure are suggested which should increase the radiation resistance. Isochronal thermal annealing induced recovery in the photovoltaic parameters at approximately 400K, coinciding with an annealing stage of the near mid-gap defect level.
An improved HgCdTe photomixer technology was demonstrated employing a p-i-n photodiode structure. The i-region was near intrinsic n-type HgCdTe; the n-region was formed by B+ ion implantation; and the p-region was formed either by a shallow Au diffusion or by a Pt Schottky barrier. Experimental devices in a back-side illuminated mesa diode configuration were fabricated, tested, and delivered. The best photomixer was packaged in a 24-hour LN2 dewar along with a cooled GaAs FET preamplifier. Testing was performed by mixing black-body radiation with a CO2 laser beam and measuring the IF signal, noise, and signal-to-noise ratio in the GHz frequency range. Signal bandwidth for this photomixer was 1.3 GHz. The heterodyne NEP was 4.4 x 10 to the -20 W/Hz out to 1 GHz increasing to 8.6 x 10 to the -10 W/Hz at 2 GHz. Other photomixers delivered on this program had heterodyne NEPs at 1 GHz ranging from 8 x 10 to the -20 to 4.4 x 10 to the -19 W/Hz and NEP bandwidths from 2 to 4 GHz.