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DOE OSTI2024

Polarization Type Potential Induced Degradation under Positive Bias in a Commercial PERC Module: Preprint

Potential induced degradation of the polarization type (PID-p) can reduce module performance in a relatively short period of time. PID-p can occur at both voltage polarities, but most studies are focused on degradation under a negative bias. This paper uses commercial bifacial passivated emitter and rear contact (PERC) cells within a monofacial glass-backsheet module construction to evaluate the impact of PID-p under a positive bias on the front side. Using the aluminum-foil (Al-foil) method, the module was stressed for PID in an environmental chamber. After the stress, the maximum power (Pmax) showed a decline of 3.1% at 1000 W/m2 and 6.2% at 200 W/m2. Recovery under light was also investigated. Complete recovery was observed at high irradiance, while a partial recovery was seen at lower irradiance. The outcomes of this study can help in understanding PID-p degradation under a positive bias and its recovery under the light.

PERC↗

DOE OSTI2023

Bringing high-efficiency silicon solar cells with heterojunction contacts to market with a new, versatile deposition technique

Silicon heterojunction (SHJ) and tunnel-oxide-passivated-contacts (TOPCon) solar cells are the future for silicon technology after passivated-emitter-and-rear-contact (PERC) cells. However, the tool costs (CapEx) for SHJ (TOPCon) make the cell lines more than 2 (1.5) times of the cost of the PERC, which hinders the wide adoption these new technologies despite higher efficiencies. A common challenge for both cell types is that the passivation layers are sensitive to sputter damage. Furthermore, for TOPCon cells, it is desirable to have an inline (instead of batch) process for tunnel oxide and polysilicon to maximize the throughput and thus reduce the operation cost.

14 SOLAR ENERGY↗

DOE OSTI2025

Polarization-type potential-induced degradation in bifacial PERC modules in the field

This study examines the susceptibility of bifacial glass/glass passivated emitter and rear cell (PERC) modules to potential-induced degradation-polarization (PID-p) in the field. While there are several studies showing PID-p occurring on both front and back faces of bifacial PERC in accelerated tests, we address the yet unclarified behavior in fielded modules. We examine the effects of mounting configuration; specifically, comparing modules mounted near ground and in elevated ground rack configurations. Modules with the cell circuit in -1500 V system voltage configuration, whether mounted on racks about 30 cm above the ground or elevated 2 m high showed mean degradation of 4.5% to 6% in power under standard test conditions over about 2.5 weeks as measured from the front side of the module. This extent of degradation remained sustained for a duration of about 6 months analyzed. Average daytime temperatures of modules in the various mounting configurations were similar and therefore judged to be insufficient to be a primary influence for the modest PID-p rate differences that we observed among mounting configurations. Increased leakage current in the morning suggests morning dew was sustained longer on modules near the ground measured over six months which would be expected to increase the PID-p rate over the long term. However, the main difference seen between the modules on the various mountings during the initial period with up to 6% mean degradation by PID-p was the approximately two times the irradiance from albedo on the rear of modules mounted in elevated ground rack compared to those on the near ground rack. This difference in incident albedo led to a modestly reduced rate of the development of PID-p of the modules on the elevated ground rack. The difference is attributed to the dissipation of PID-p-causing electrical charge by the albedo incident on the module rear. The behavior could be modeled by a sigmoidal equation with consideration of the differences in the insolation on the module rear.

14 SOLAR ENERGY↗

DOE OSTI2026

Lessons from the IEC Durability of Adhesion Accelerated Test Sequence

The IEC 62788-1-1 and IEC 63209-2 standards use aging sequences for durability of adhesion in photovoltaic (PV) modules, which may be evaluated using the single cantilever beam (SCB) test. Because the encapsulant forms critical interfaces with the front glass and solar cells, degradation at those interfaces under ultraviolet (UV) exposure, elevated temperature, and humidity can lead to interfacial delamination - compromising the long-term reliability. In this work, adhesion durability of UV-transmitting poly(ethylene-co-vinyl acetate) (EVA) encapsulant to glass and to silicon solar cells is evaluated after sequenced UV and damp heat aging (85C/85%RH). Laminates were prepared using StarPhire solar front glass with thin glass or PERC cells, and two EVA formulations with different concentrations of siloxane coupling agent. Adhesion was quantified by measuring critical debond energy using the SCB method. Both formulations exhibit similar qualitative trends, while different adhesion is observed at the periphery despite the use of low-shrink manufacturing. The results show that while glass/EVA adhesion remains stable or increases after UV exposure and shows only moderate changes after damp heat, the EVA/cell interface exhibits an irreversible loss of adhesion following UV and then damp heat exposure. Although glass/EVA interfaces generally exhibit lower debond energies, the EVA/cell interface is significantly more vulnerable to UV-driven degradation, identifying it as the dominant reliability risk location through early- and intermediate-module life. These results demonstrate that accelerated aging sequences can expose large, interface-specific losses in adhesion durability and underscore the importance of interface engineering for long-term PV module reliability.

14 SOLAR ENERGY↗

DOE OSTI2026

Tandem Photovoltaics Core Program Final Technical Report

The Tandem Photovoltaics Core Program was a multi-year initiative aimed at advancing hybrid tandem solar cell technologies to enhance solar module efficiency beyond the limits of single junction devices. This project focused on the development, testing, and scaling of prototype photovoltaic devices, with the goal of achieving commercial relevance and driving industry adoption. The work was divided into three tasks: 1) Comparative Analysis of Tandem Technologies: This task focused on quantifying energy yield under real-world conditions and assessing economic viability of tandems relative to silicon-based modules. The project's modeling framework incorporated performance data, cost of materials, and manufacturing process impacts to optimize tandem designs 2) Tandem Integration and Prototyping: In this task, we developed innovative tandem designs by combining metal halide perovskite (MHP) top cells and silicon (Si) bottom cells. The project focuses on both mechanical integration and direct deposition techniques to enable compatibility with commercially relevant Si technologies, such as passivated contact or PERC cells. 3) Scale-up and Reliability: This task addressed the challenges of large-area fabrication by developing scalable deposition methods and robust interconnection schemes for tandems. The project looked at different accelerated testing such as thermal cycling, damp heat exposure, and potential induced degradation, to ensure long-term stability of devices in field conditions. Tandem solar cells can greatly increase module efficiency beyond conventional single junction (SJ) devices, which are approaching their theoretical limit. There are many ways to fabricate a tandem cell or module in terms of materials used, configuration, and terminal connection. This SETO core project focused critical factors in enabling tandems to enter the market, including hardware integration, technoeconomic analysis (TEA), and energy yield analysis. We focused on MHP/Si hybrid tandem solar cells and modules as a model system for their versatility in module design comparisons, providing valuable insights for other tandem options. While champion cells with areas <1cm2 are regularly demonstrated by groups around the world, it is significantly more challenging to translate these advances into modules, and fewer institutions and companies are working at the module level. This project addressed questions about module fabrication, testing, and reliability that are hard to answer without actually fabricating prototypes. We also performed analysis and road-mapping activities to understand the potential for a wider variety of tandems, including all-perovskite tandems fabricated in collaboration with the Perovskite PV core program. Detailed technical results from this project are described for each task in Section 7.

14 SOLAR ENERGY↗

DOE OSTI2023

Hydrogen Sulfide Passivation for p-Type Passivated Emitter and Rear Contact Solar Cells

This work reports on the application of sulfur (S)-passivation to passivated emitter and rear contact (PERC) solar cells. The emitter surface was passivated by hydrogen sulfide (H 2 S) gas phase reaction and capped by a hydrogenated amorphous silicon nitride (a-SiN x :H) layer. The sulfur passivation on a symmetrically n + diffused emitter is shown to lead to an emitter saturation current density (J 0n+ ) of 30 fA/cm 2 at R sheet,n+ ≈ 100 Ω/sq. The application of S-passivation to the emitter surface in the PERC cell structure, with the rear surface passivated by an aluminum oxide (Al 2 O 3 )/a-SiN x :H stack, showed a promising implied open-circuit voltage (iV OC ) of 686 mV before metallization. This iV OC was higher than that for the a-SiN x :H or SiO 2 /a-SiN x :H passivated emitter surfaces (675 and 674 mV, respectively) on PERC cells processed in the same run. However, a significant drop in cell V OC is observed for the S-passivated PERC cell after the completion of device fabrication with laser patterning, screen-printed metal contact deposition, and firing. Nonetheless, an efficiency of ~20% and a V OC of ~650 mV was achieved with an emitter surface passivated by sulfur. We identified that the 760°C contact firing process degrades the S-passivation quality. Furthermore, the surface morphology was studied, and a detailed surface analysis was performed to study the causes of the S-passivated surface degradation.

14 SOLAR ENERGY↗

DOE OSTI2023

Capacitance Transients, Photoconductive Decay, and Impedance Spectroscopy on 19% to 22% Efficient Silicon Solar Cells

High efficiency silicon solar cells are characterized using current-voltage curves, electroluminescence imaging, impedance spectroscopy, capacitance transients, microwave photoconductive decay, and time-resolved photoluminescence imaging. The sample set is composed of cells from different manufacturers and includes an n-type silicon heterojunction (SHJ), an n-type passivated emitter rear totally diffused (PERT), and five different p-type passivated emitter rear contact (PERC) cells. Carrier lifetimes, both photoconductivity and photoluminescence, are measured co-located with the light excitation pulse and within the cell but away from the light spot. Luminescence intensity and excess carrier lifetimes correlate to cell voltage. The capacitance transient time constants correlate to the capacitance values extracted from impedance spectroscopy.

capacitance↗

DOE OSTI2023

Capacitance Transients, Photoconductive Decay, and Impedance Spectroscopy on 19% to 22% Efficient Silicon Solar Cells

capacitance↗

DOE OSTI2020

Spatially resolved characterization of optical and recombination losses for different industrial silicon solar cell architectures

In this work, spatially resolved characterization methods are used to identify loss mechanisms for common p -type silicon solar cell architectures, including multicrystalline aluminum back surface field (Al-BSF), monocrystalline Al-BSF, monocrystalline passivated emitter and rear cells (PERC), and bifacial monocrystalline PERC. The characterization methods used in this work include suns-V OC , photoluminescence imaging, and spatially resolved external quantum efficiency and reflectance measurements. The optical and recombination losses are driven by the material properties, cell processing conditions, and device architecture. These losses are quantified and categorized in terms of underlying mechanisms (e.g., front reflectance, escape reflectance, front recombination, and parasitic optical absorption and recombination in the bulk and rear). The ability to create images of these loss parameters can be used to gain more insight into the materials and manufacturing processes used to produce solar cells, and examples are given in this work to illustrate how these images can help reveal the origin of defects.

14 SOLAR ENERGY↗

DOE OSTI2020

Enabling Efficiencies > 22.5% with Metal Oxide Passivating Contacts using Low-Cost Spatial Atomic Layer Deposition (Final Technical Report)

In this project, the University of Central Florida (UCF) worked to both increase module efficiency and reduce manufacturing cost by driving demonstrated lab-scale passivating contact technology using materials and processes compatible with high-volume manufacturing for crystalline silicon (c-Si) photovoltaic (PV) cells. Passivating contacts have garnered significant attention in recent years. They provide a means of suppressing contact recombination, a loss mechanism that limits the performance of industrially relevant cell architectures like Al back surface field (Al-BSF) cells and passivated emitter and rear cells (PERC). Most of the development of passivating contact technology has focused on the use of doped amorphous silicon or doped polysilicon contacts, but both suffer from parasitic optical absorption amongst other issues. Our team developed fully transparent hole-selective heterojunctions, deposited using atomic layer deposition (ALD), and showed how they could be incorporated into c-Si PV cells. The team conducted experiments to understand the process-structure-property relationship of hole-selective oxides, surface passivation oxide materials, and transparent conductive oxides deposited by ALD, and use that understanding to reduce contact recombination, contact resistivity, and parasitic optical absorption within c-Si PV cells. Before getting into the details of the report, we would like to note that COVID-19 has made it more challenging to conduct experimental research at UCF. UCF has a number of mandatory policies in place to ensure social distancing, testing, and contact tracing are all carried out in day-to-day operations. Despite these challenges, we worked diligently to make progress on this project in a manner that was as safe as possible. Over the course of the project, the UCF team and its collaborators have made the following discoveries and developments.

14 SOLAR ENERGY↗

DOE OSTI2024

High Temperature Copper Metallization: Demand, Hurdles and Reliability

As newer cells structures come online, the pressing need to replace silver in the metallization pastes has renewed interest in alternative technologies employing base metals. Copper typically leads the charge with its abundance and lower cost but has faced numerous obstacles from relatively higher oxidation and diffusion rates which can damage the lifetime of the devices. In this study, a low-cost alternative to silver metallization pastes has been shown on PERC cells. The screen printable copper paste can be fired in air at temperatures >500 degrees C, and the impact of processing conditions and equipment on the performance and reliability of 274 cm2 cells have been evaluated. Through damp heat testing of micro-modules using 16 cm2 cells, routes that can lead to both the failure and success of durable contacts have been demonstrated.

copper↗

DOE OSTI2022

Techno-economic analysis of the use of atomic layer deposited transition metal oxides in silicon heterojunction solar cells

The industry for producing silicon solar cells and modules has grown remarkably over the past decades, with more than a 100-fold reduction in price over the past 45?years. The main solar cell fabrication technology has shifted over that time and is currently dominated by the passivated emitter and rear cell (PERC). Other technologies are expected to increase in market share, including tunnel-oxide passivated contact (TOPCon) and heterojunction technology (HJT). In this paper, we examine the cost potential for using atomic layer deposition (ALD) to form transition metal oxide (TMO) layers (MoO x , TiO x and aluminium-doped zinc oxide [AZO]) to use as lower cost alternatives of the p-doped, n-doped and indium tin oxide (ITO) layers, respectively, the layers normally used in HJT solar cells. Using a bottom-up cost and uncertainty model with equipment cost data and process experience in the lab, we find that the production cost of these variations will likely be lower per wafer than standard HJT, with the main cost drivers being the cost of the ALD precursors at high-volume production. We then considered what efficiency is required for these sequences to be cost effective in $/W and discuss whether these targets are technically feasible. This work motivates further work in developing these ALD TMO processes to increase their efficiency towards their theoretical limits to take advantage of the processing cost advantage.

14 SOLAR ENERGY↗

DOE OSTI2022

Evaluation of bifacial module technologies with combined–accelerated stress testing

In view of the increasing interest and market share of bifacial cells and modules, suitable substrates such as glass and transparent backsheets along with ethylene vinyl acetate (EVA) and polyolefin elastomer (POE) encapsulants were examined in combined-accelerated stress testing (C-AST) to evaluate and compare degradation modes. Testing with both monofacial and bifacial cells, we found glass-glass modules with monofacial cells led to greater grid finger breakage than those with polymeric backsheets. Furthermore, this is attributed to previous X-ray topography and modeling work showing higher stress in cells and interconnections in glass-glass modules than glass-backsheet modules. Consistent with the objectives of C-AST, which stresses modules at levels corresponding to the limits seen in the natural environment, we observed the UV-fluorescence signatures of modules tested in C-AST (considering the degradation associated with developing chromophores, moisture penetration and photobleaching effects) to be like those in fielded modules, more so than other chamber stress testing implemented for comparison. We found light-induced degradation (LID) in module types with regenerated (inactive) cells with C-AST, suggesting the possibility of LID destabilization in some field conditions. We could also distinguish potential-induced degradation (PID) on the back of the bifacial passivated emitter and rear cells (PERC) in C-AST. Confirming with ex-situ tests, we found polarization-type PID most prevalent in glass-glass modules with EVA as would be anticipated considering the greater leakage current through such module encapsulation. Unlike PID tests performed in the dark, which can lead to false positive PID test results, field-representative illumination is experienced by the modules on the front and back side while –1200 V system voltage is applied in C-AST, supporting the conclusion that this module type with glass-glass construction would be susceptible to PID in the field.

14 SOLAR ENERGY↗

NASA NTRS1998

Semiconductors: In Situ Processing of Photovoltaic Devices

The possible processing of semiconductor photovoltaic devices is discussed. The requirements for lunar PV cells is reviewed, and the key challenges involved in their manufacturing are investigated. A schematic diagram of a passivated emitter and rear cell (PERC) is presented. The possible fabrication of large photovoltaic arrays in space from lunar materials is also discussed.

Curreri, Peter A.↗

DOE OSTI2022

Evaluation of Bifacial Modules and PV Technologies with Combined-Accelerated Stress Testing

In view of the increasing interest and market share of bifacial cells and modules, suitable substrates such as glass and transparent backsheets along with ethylene vinyl acetate (EVA) and polyolefin elastomer (POE) encapsulants were examined in combined-accelerated stress testing (C-AST) to evaluate and compare degradation modes. Testing with both monofacial and bifacial cells, we found glass-glass modules with monofacial cells led to greater grid finger breakage than those with polymeric backsheets. This is attributed to previous x-ray topography work showing higher stress in cells in glass-glass modules than glass backsheet modules. Consistent with the objectives of C-AST, which stresses modules at levels corresponding to the limits seen in the natural environment, we observed the UV-fluorescence signatures of modules tested in C-AST (considering the degradation associated with developing chromophores, moisture penetration and photobleaching effects) to be like those in fielded modules, more so than other chamber stress testing implemented for comparison. Finally, among multiple cell degradation modes that we observed such as light-induced degradation (LID), we differentiated susceptibility to potential-induced degradation (PID) on the back of the bifacial Passivated Emitter Back Cells (PERC) in C-AST. Confirming with ex-situ tests, we found polarization-type PID most prevalent in glass/glass modules with EVA as would be anticipated considering the greater leakage current through such module encapsulation. Unlike PID tests performed in the dark, which can lead to false positive PID test results, field-representative illumination is experienced by the modules on the front and back side while -1200 V system voltage is applied in C-AST, supporting the conclusion that this module type would be susceptible to PID in the field.

bifacial modules↗

DOE OSTI2022

Novel and effective surface passivation for high efficiency n- and p-type Silicon solar cell

The project objective was to develop a novel Si surface passivation method using chalcogens, sulfur (S) and/or selenium (Se), as passivating elements, to withstand industry-standard high temperature contacting and metallization schemes for p-type Si based passivated emitter and rear contact (p-PERC) solar cells. The back surface passivation of PERC cells has been improved drastically with the invention and successful application of an Al 2 O 3 passivation layer. However, the front n + diffused junction surface is still poorly passivated by the standard amorphous silicon nitride (SiNx) anti-reflection coating (ARC) layer. This project sought to address the passivation challenges of both front n+ emitter and undiffused p-Si back surface. Improved p-PERC solar cell performance with open circuit voltage (V OC ) > 680 mV and efficiency of 22% were targeted to validate superior defect passivation properties as compared to standard SiO 2 / Al 2 O 3 passivation. During this project, we systematically investigated process-structure-properties-performance relationships of this novel advanced defect passivation approach. The S/Se passivation was carried out by reacting industrial Czochralski (Cz) Si wafers in H 2 S and H 2 Se gases in a chemical vapor deposition (CVD) reactor at temperatures up to 700°C. After an exhaustive optimization of the process parameters (temperature, time, and gas concentration), we established an optimized process and demonstrated extremely low surface recombination velocities (SRVs) of 1.5 cm/s and 8 cm/s on n-type and p-type Si, respectively, by S-passivation. In-depth surface and interface characterization were performed using soft x-ray and photoelectron spectroscopies (XPS, UPS, XES), combined with capacitance-voltage-frequency (C-V-f) measurements, to decipher the surface chemical/electronic structure and interface defect state densities. These measurements provided critical understanding of the defect passivation mechanism and elucidated the presence of surface S-Si bonds, a reduction of surface dipoles, and low interface state densities (D it ) < 10 11 cm -2 ev -1 . We also found that the Se-passivation is inferior to the S-passivation (by at least one order of magnitude in SRV). Application of the optimized S-passivation to the n+ diffused emitter surface led to a low surface recombination current density, J0 ≈ 40 fA/cm 2 (~ 1/4 of the industry-standard SiNx-passivation), and high implied V OC (686 mV) in p-PERC solar cell structures. The S-passivation process also was found to improve the bulk quality of the p-type Si, better than the SiO 2 or Al 2 O 3 passivation processes. After successful demonstration of efficient passivation of Si surface defects by S, we extensively studied the air, thermal, and illumination stability of the passivation structure. S-passivation itself degrades in air due to competing reactions with moisture and oxygen to form oxides, which can be eliminated by a SiNx capping layer (also acting as a anti-reflective coating). After SiNx process optimization, we demonstrated illumination and thermally stable S-passivation with SRV < 5 cm/s and J 0 < 80 fA/cm 2 . These enhancements in Si passivation, incorporated into p-PERC cells, achieved an efficiency of 19.93% with V OC = 649 mV, using manufacturing metallization and contacting schemes. The low cell performance (cell V OC is much less than the implied V OC = 686 mV, anticipated from surface passivation) was identified due to degradation of S-passivation during the metal firing step (out-diffusion of S from the Si interface to the SiNx surface). The S-passivation of Si surfaces shows significant promise with excellent passivation quality, essential for high performance (high V OC , high efficiency) solar cells. Integration of this innovative defect passivation into devices, however, demands further development of the capping layer, low temperature (<700°C) metallization process, and/or engineering of advanced device structures. Surface passivation-dominated advanced Si solar cells, such as tunnel oxide passivated contacts and Si heterojunctions, are increasingly of interest due to their high-performance potential and will have a growing photovoltaic market share in the near future.

14 SOLAR ENERGY↗

DOE OSTI2024

Development and Reliability of Screen-Printable Fire-Through Cu Paste for Passivated Contact Solar Cells

We present the development of copper (Cu) paste which has been screen printed on Selective Emitter-Passivated Emitter Rear Contact (SE-PERC) solar cells. This paste can also be applied to Tunnel Oxide Passivated Contact (TOPCON) solar cells due to its fire-through nature. Champion PERC cells have achieved ....efficiency with ...parameters . Accelerated testing to investigate reliability performance of the SE- PERC mini-modules were carried out in damp heat chamber with 85oC and 85% humidity. The devices were found to be operational even after 1,500 hours. Devices with screen printed Ag contacts on the front side have been studied in parallel to the Cu contacts for comparison.

copper paste↗

DOE OSTI2023

Screen printable copper pastes for silicon solar cells

The current work demonstrates the successful metallization of a PERC silicon solar cell with screen-printable copper (Cu) paste that is sintered at elevated temperature in air atmosphere. The existing state of the art in Silicon (Si) solar cell metallization is silver (Ag) paste; Cu cost is 1/100th the cost of Ag and has a comparable conductivity. However, Cu undergoes rapid oxidation at elevated temperatures and the high diffusion of Cu into Si restricts its usage in the metallization of silicon solar cells. In this paper, a Cu paste containing a proprietary mixture of antioxidant additives and diffusion inhibitors was used to make front gridlines on PERC cells. The Cu-printed cells were fired in an IR belt furnace with a peak temperature of 576°C in air atmosphere. The solar cells discussed here reached an efficiency of 19%, which is 88% of the efficiency measured for a commercial Ag-printed cell. The working devices were further characterized using STEM, EDX, ToF-SIMS and long-term suns-V oc studies demonstrating an absence of Cu diffusion. Furthermore, thermally stressing the Cu-printed solar cells yielded a reduction of less than 1.9% of the initial pseudo fill factor (pFF) after 1000 hours at 200°C. Here, the shunt resistance of cells monitored over 3 years remained within 2.5% of its initial value, which demonstrates the effectiveness of the Cu diffusion barrier.

14 SOLAR ENERGY↗