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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1977

Optically activated switch/modulator using a photoconductor and two channel waveguides

An optically activated switch was fabricated on LiNbO3 substrate by deposition of photoconductor-metal electrode structure on two channel waveguides obtained by the outdiffusion process. One waveguide was overcoated with a CdS film, and served as a light detector which converted the optical signal in that waveguide into an electric signal. Utilizing the electrooptic effect, this electric signal modulated the light propagating in the second waveguide by changing the refractive index, and the cutoff condition, of the waveguiding channel between two metal electrodes. The waveguides in the optically controlled switch can be either single or multimode. The length of the device can be short in comparison with other switching schemes. When binary optical signals are applied to the two waveguides, the switch can perform logic AND, NEGATION, OR and pseudo-amplification operations.

Goldberg, L.↗
NASA NTRS1983

Performance and materials aspects of Ge:Be photoconductors

Ge:Be photoconductors were developed for low photon background applications in the 30 to 50 MM wavelength region. These detectors provide higher responsivity and lower noise equivalent power (NEP) than the Ge:Ga detectors currently operating in this wavelength range. Beryllium doped single crystals were grown by the Czochralski method from a carbon susceptor under a vacuum of approx. one million torr. An optimum detective quantum efficiency of 46% at a background flux of 1.5 x 10 to the 8th power photons/second (7 x 10 to the 13th power W) was reported. Ge:Be detector performance is strongly influenced by the absolute concentrations and the concentration ratio of residual shallow donors and shallow acceptors.

Haegel, N. M.↗
NASA NTRS1983

Performance and materials aspects of Ge:Be photoconductors

Ge:Be photoconductors have been developed for low photon background applications in the 30 - 50 micron wavelength region. These detectors provide higher responsivity and lower noise equivalent power (NEP) than the Ge:Ga detectors currently operating in this wavelength range. Beryllium-doped single crystals were grown by the Czochralski method from a carbon susceptor under a vacuum of approximately 10 to the -6th torr. An optimum detective quantum efficiency of 46 percent at a background flux of 1.5 x 10 to the 8th photons/second (7 x 10 to the -13th W is reported. Ge:Be detector performance is strongly influenced by the absolute concentrations and the concentration ratio of residual shallow donors and shallow acceptors.

Haegel, N. M.↗
NASA NTRS1986

Transient response of Ge:Be and Ge:Zn FIR photoconductors under low background photon flux conditions

An experimental study of the transient behavior of Ge:Be and Ge:Zn photoconductors to changes in photon flux rates has been performed under the low background flux conditions (10 to the 8th photon/s) typical of astronomy and astrophysics applications. A characteristic transient behavior with time constants ranging from 0.1 to greater than 5 s has been observed in both materials when the shallow levels are very closely compensated. The detector response consists of both a fast and a slow component. The amplitude of the slow component can be up to 10 times greater than the initial fast component. It has been established that this phenomenon cannot be explained by current models of carrier sweep-out or dielectric relaxation. The transient behavior has been characterized as a function of temperature, electric field, photoconductive gain and material parameters.

Haegel, N. M.↗
NASA NTRS1988

Microwave response of an HEMT photoconductor

Interdigitated photodetectors of various geometries have been fabricated on GaAlAs/GaAs heterostructure material. Optical response characteristics of these devices have been examined at both dc and microwave frequencies. The microwave response, at frequencies to 8 GHz, was studied by illuminating the devices with the output of an internally modulated GaAlAs diode laser. Results of these measurements are presented and compared with that of GaAs photoconductors.

Claspy, P. C.↗
NASA NTRS1988

Solar energy conversion through the interaction of plasmons with tunnel junctions. Part A: Solar cell analysis. Part B: Photoconductor analysis

A solar cell utilizing guided optical waves and tunnel junctions was analyzed to determine its feasibility. From this analysis, it appears that the limits imposed upon conventional multiple cell systems also limit this solar cell. Due to this limitation, it appears that the relative simplicity of the conventional multiple cell systems over the solar cell make the conventional multiple cell systems the more promising candidate for improvement. It was discovered that some superlattice structures studied could be incorporated into an infrared photodetector. This photoconductor appears to be promising as a high speed, sensitive (high D sup star sub BLIP) detector in the wavelength range from 15 to over 100 micrometers.

Welsh, P. E.↗
NASA NTRS1988

Germanium:gallium photoconductors for far infrared heterodyne detection

Highly compensated Ge:Ga photoconductors for high bandwidth heterodyne detection have been fabricated and evaluated. Bandwidths up to 60 MHz have been achieved with a corresponding current responsivity of 0.01 A/W. The expected dependence of bandwidth on bias field is obtained. It is noted that increased bandwidth is obtained at the price of greater required local oscillator power.

Park, I. S.↗
NASA NTRS1988

Microwave response of an HEMT photoconductor

Interdigitated photodetectors of various geometries have been fabricated on GaAlAs/GaAs heterostructure material. Optical response characteristics of these devices have been examined at both dc and microwave frequencies. The microwave response, at frequencies to 8 GHz, was studied by illuminating the devices with the output of an internally modulated GaAlGa diode laser. Results of these measurements are presented and compared with that of GaAs photoconductors.

Claspy, P. C.↗
NASA NTRS1989

Near contact phenomena and transient effects in far infrared photoconductors

A combination of experimental and modeling work is summarized in two areas: first, the calculation of excess free carrier and space charge distributions near contacts and their effects on device resistivity, and second, the characterization of a slow transient response (tau approx. 1 sec) in Ge:Be detectors which is due to trapping associated with Be(+) formation. In both cases, analytical models, based on continuity and rate equations, have been developed to enable the application of these findings to a wide variety of photoconductor materials.

Haegel, Nancy M.↗
NASA NTRS1991

Design parameters of a resonant infrared photoconductor with unity quantum efficiency

This paper proposes a concept of a resonant infrared photoconductor that has characteristics of 100 percent quantum efficiency, high photoconductive gain, and very low noise equivalent power. Central to this concept is an establishment of a high-finesse absorption cavity internal to the detector element. A theoretical analysis is carried out, demonstrating this concept and providing some design guidelines. A Ge:Ga FIR detector is presently being fabricated using this approach.

Farhoomand, Jam↗
NASA NTRS1993

Near-contact diffusion and compensation in extrinsic photoconductors

Carrier diffusion from heavily doped contact regions has been experimentally monitored with resistivity measurements of variable thickness Si:P extrinsic photoconductors (n(+) -n-n(+)). Modeling of free carrier diffusion at the interface of heavily doped contacts and highly resistive bulk at low temperatures predicts extended regions (5-30 microns) of excess carriers in high purity materials so that, in thin device structures, free carrier diffusion profiles from each contact will overlap and determine the resistivity of the device. In this work, a decrease in resistivity of four orders of magnitude was observed in a 5-micron thick structure compared to a 10-micron thick device. The resistivity of an ohmic structure in the thin limit is strongly dependent on the bulk and near-contact compensation, and resistivity measurements can be used as a sensitive measure of compensation at interfaces or in the tail of implanted layers.

Olsen, C. S.↗
NASA NTRS2002

Optimizing Performance of Far-Infrared Photoconductors: New Approach for Interpretation and Calibration of Transient Response

The goals of the proposed work were to determine if final steady state current values for Ge:Ga photoconductors could be predicted from the initial fast component of the transient response and to develop algorithms to operationalize this approach. This required transient measurements as a function of photon background and signal sizes, for both single shot and modulated signals. In addition, we proposed to address the nature of the hook response and the effects of non-equilibrium background fluctuations.

Haegel, Nancy M.↗
NASA NTRS2002

Performance of the SBRC 190, a cryogenic multiplexer for photoconductor arrays

The SBRC 190 cryogenic readouts were developed for use with far-infrared arrays of Ge:Sb and Ge:Ga photoconductor detectors. The SBRC 190 provides an AC-coupled CTIA (capacitance transimpedance amplifier) unit cell for each detector and multiplexes up to 32 detectors. This paper presents our test results characterizing and optimizing the performance of these novel devices. We will discuss their basic behavior in addition to describing the trade-offs inherent in different sampling strategies.

Dotson, Jessie L.↗
NASA NTRS2002

Specification and Design of the SBRC-190: A Cryogenic Multiplexer for Far Infrared Photoconductor Detectors

Arrays of far-infrared photoconductor detectors operate at a few degrees Kelvin and require electronic amplifiers in close proximity. For the electronics, a cryogenic multiplexer is ideal to avoid the large number of wires associated with individual amplifiers for each pixel, and to avoid adverse effects of thermal and radiative heat loads from the circuitry. For low background applications, the 32 channel CRC 696 CMOS device was previously developed for SIRTF, the cryogenic Space Infrared Telescope Facility. For higher background applications, we have developed a similar circuit, featuring several modifications: (a) an AC coupled, capacitive feedback transimpedence unit cell, to minimize input offset effects, thereby enabling low detector biases, (b) selectable feedback capacitors to enable operation over a wide range of backgrounds, and (c) clamp and sample & hold output circuits to improve sampling efficiency, which is a concern at the high readout rates required. We describe the requirements for and design of the new device.

Erickson, E. F.↗
NASA NTRS1971

N-type mercury-cadmium-telluride photoconductors in optical heterodyne communication systems.

Discussion of the performance of a photoconductive (Hg,Cd)Te detector/mixer in a carbon dioxide laser heterodyne communication system. The utility of computer simulation of the performance of an optical heterodyne detector/mixer is demonstrated. Certain unusual properties of this device are pointed out that, while having a substantial impact on device performance, have received little previous attention.

Cohen, S. C.↗