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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2

Two-micron Detector Development using Sb-based Material Systems

NASA Langley Research Center (LaRC), in partnership with the University of Delaware (UD), developed AlGaAsSb/InGaAsSb custom-designed phototransistors in the 0.6-2.5 micron wavelength range for applications to laser remote sensing. The phototransistor s performance greatly exceeds the previously reported results at this wavelength range in the literature. The performances of the custom-designed phototransistor, such as responsivity, detectivity, and gain, are improved significantly as compared to the previously published detectors as well as commercial detectors. Detection in the 0.6- to 2.5- micron broadband with a single phototransistor will result in reduction or elimination of heavy and complex optical components now required for multiple wavelength detection in atmospheric remote sensors resulting in smaller, lighter, simpler instruments with higher performance. This high performance broadband phototransistor will eliminate the need for high power laser for active remote sensing and also the Si (1.0- micron cutoff) and InGaAs (extended 2.3- micron cutoff) detectors. The developed broadband phototransistor will be applicable for the next generation of space-based Earth observations and other planetary instruments for active and passive remote sensing with substantial reduction in size, complexity, and weight to measure water vapor, methane, and carbon dioxide in planetary atmospheres as well as aerosol, cloud, water vapor, O2, CO, and CO2 for a broad range of applications to Earth and Space Science Missions under Science Mission Directorate (SMD) research programs.

Abedin, M. N.↗

Progress of 2-micron Detectors for Application to Lidar Remote Sensing

AlGaAsSb/InGaAsSb heterojunction phototransistors were developed at Astropower, Inc under Laser Risk Reduction Program (LRRP) for operation in the 2-micron region. These phototransistors were optimized for 2-micron detection and have high quantum efficiency (>60%), high gain (>10(exp 3)) and low noise-equivalent- power (<5x10(exp -14) W/Hz), while operating at low bias voltage. One of these phototransistors was tested in lidar mode using the 2-micron CO2 Differential Absorption Lidar (DIAL) system currently under development under the Instrument Incubator Program (IIP) at NASA Langley. Lidar measurements included detecting atmospheric structures consisting of thin clouds in the mid-altitude and near-field boundary layer. These test results are very promising for the application of phototransistors for the two-micron lidar remote sensing. In addition, HgCdTe avalanche photodiodes (APD) acquired from Raytheon were used in atmospheric testing at 2-microns. A discussion of these measurements is also presented in this paper.

Abedin, M. N.↗

Photoelectronic Monitor of Motion Sickness

Instrument includes gallium arsenide light-emitting diode (LED) and silicon phototransistor with infrared filter, all cast in single plastic housing. Housing attached to subject's face with transparent doublesided adhesive tape. LED directs pulses of infrared light to skin, which reflects them to phototransistor. Phototransistor produces signal that is processed by external circuits to yield plot of infrared reflectance with time. External circuits temperature-compensated and respond only to pulsed component of detector output, rejecting those components caused by stray light. Circuits also extract blood-volume pulse amplitude and heart rate.

Oman, C. M.↗

Development of an image converter of radical design

A long term investigation of thin film sensors, monolithic photo-field effect transistors, and epitaxially diffused phototransistors and photodiodes to meet requirements to produce acceptable all solid state, electronically scanned imaging system, led to the production of an advanced engineering model camera which employs a 200,000 element phototransistor array (organized in a matrix of 400 rows by 500 columns) to secure resolution comparable to commercial television. The full investigation is described for the period July 1962 through July 1972, and covers the following broad topics in detail: (1) sensor monoliths; (2) fabrication technology; (3) functional theory; (4) system methodology; and (5) deployment profile. A summary of the work and conclusions are given, along with extensive schematic diagrams of the final solid state imaging system product.

Irwin, E. L.↗

Infrared range sensor

Sensor employs triangulation technique to locate objects that lie in intersections of four emitted beams of light and fields of view of four phototransistors. Signals from individual phototransistors are filtered and identified by individual synchronous detectors, one for each beam-intersection point.

Hill, J. W.↗

New television camera eliminates vidicon tube

Small, lightweight camera systems use solid state imaging devices in the form of phototransistor mosaic sensors instead of vidicon tubes for light sensing and image conversion. The digital logic circuits scan the sensor mosaic at 60 frames per second to produce pictures composed of a series of dots rather than lines.

Source record↗

An integrated circuit switch

Multi-chip integrated circuit switch consists of a GaAs photon-emitting diode in close proximity with S1 phototransistor. A high current gain is obtained when the transistor has a high forward common-emitter current gain.

Bonin, E. L.↗

Television research

Model of solid state television camera without imaging tube and using mosaic of phototransistors

Huggins, C. T.↗

Solid state television camera has no imaging tube

Camera with characteristics of vidicon camera and greater resolution than home TV receiver uses mosaic of phototransistors. Because of low power and small size, camera has many applications. Mosaics can be used as cathode ray tubes and analog-to-digital converters.

Huggins, C. T.↗

Feasibility test of a solid state spin-scan photo-imaging system

The feasibility of using a solid-state photo-imaging system to obtain resolution imagery from a Pioneer-type spinning spacecraft in future exploratory missions to the outer planets is discussed. Evaluation of the photo-imaging system performance, based on electrical video signal analysis recorded on magnetic tape, shows that the signal-to-noise (S/N) ratios obtained at low spatial frequencies exceed the anticipated performance and that measured modulation transfer functions exhibited some degradation in comparison with the estimated values, primarily owing to the difficulty in obtaining a precise focus of the optical system in the laboratory with the test patterns in close proximity to the objective lens. A preliminary flight model design of the photo-imaging system is developed based on the use of currently available phototransistor arrays. Image quality estimates that will be obtained are presented in terms of S/N ratios and spatial resolution for the various planets and satellites. Parametric design tradeoffs are also defined.

Laverty, N. P.↗

Vacuum UV performance of silicon detectors

The sensitivity, time-varying response, and spatial sensitivity of four silicon detectors of vacuum UV were measured by passing a typical flux of 3 x 10 photons/s at the Lyman alpha line of 1215.7 A through an exit aperture of 0.55 mm x 0.8 mm. The detectors tested were: (1) a Fairchild FPM 200 silicon planar passivated photodiode with the window removed so that radiation could directly impinge on the center of the 1.0 mm square silicon chip, (2) a Fairchild FPM 100 silicon NPN planar passivated phototransistor, (3) the Hewlett-Packard 5082-4204 silicon planar PIN photodiode, and (4) the United Detector Technology PIN Spot/2 special sensitive silicon Schottky surface photodiode with the window removed.

Ohlhaber, R. L.↗