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33 records · Page 2

Two-Photon-Absorption Scheme for Optical Beam Tracking

A new optical beam tracking approach for free-space optical communication links using two-photon absorption (TPA) in a high-bandgap detector material was demonstrated. This tracking scheme is part of the canonical architecture described in the preceding article. TPA is used to track a long-wavelength transmit laser while direct absorption on the same sensor simultaneously tracks a shorter-wavelength beacon. The TPA responsivity was measured for silicon using a PIN photodiode at a laser beacon wavelength of 1,550 nm. As expected, the responsivity shows a linear dependence with incident power level. The responsivity slope is 4.5 x 10(exp -7) A/W2. Also, optical beam spots from the 1,550-nm laser beacon were characterized on commercial charge coupled device (CCD) and complementary metal-oxide semiconductor (CMOS) imagers with as little as 13.7 microWatts of optical power (see figure). This new tracker technology offers an innovative solution to reduce system complexity, improve transmit/receive isolation, improve optical efficiency, improve signal-to-noise ratio (SNR), and reduce cost for free-space optical communications transceivers.

Ortiz, Gerardo G.↗

Photodetector Arrays for Multicolor Visible/Infrared Imaging

Monolithic focal-plane arrays of photodetectors capable of imaging the same scenes simultaneously in multiple wavelength bands in the visible and infrared spectral regions have been proposed. In prior visible/infrared imaging systems, it has been standard practice to use separate optical trains to form images in visible and infrared wavelength bands on separate visibleand infrared-photodetector arrays. Because the proposal would enable the detection of images in multiple wavelength bands on the same focal plane, the proposal would make it unnecessary to use multiple optical trains. Hence, multispectral imaging systems could be made more compact and the difficulties of aligning multiple optical trains would be eliminated. Each pixel in an array according to the proposal would contain stacks of several photodetectors. The proposal is a logical extension of prior concepts of arrays of stacked photodetectors for imaging in two or three wavelength bands. For example, such an array was described in Three-Color Focal-Plane Array of Infrared QWIPs (NPO-20683), NASA Tech Briefs, Vol. 24, No. 5 (May 2000), page 26a. In one proposed design, (see figure), each pixel would be divided into four subpixels, one being dedicated to a visible- and-near-infrared (V) band, one to a combination of the V band and a verylong- wavelength infrared (VLWIR) band, one to a combination of the V band and a long-wavelength infrared (LWIR) band, and one to a combination of the V band and a medium-wavelength infrared (MWIR) band. For this purpose, each subpixel would include a GaAs-based positive/intrinsic/negative (PIN) photodiode for detection in the V band stacked with three quantum-well infrared photodetectors (QWIPs), each optimized for one of the aforementioned infrared bands. The stacks of photodetectors in all the subpixels would be identical except for the electrical connections, which would be configured to activate the various wavelengthband combinations.

Gunapala, Sarath↗

Fast Imaging Detector Readout Circuits with In-Pixel ADCs for Fourier Transform Imaging Spectrometers

Focal plane arrays (FPAs) with high frame rates and many pixels benefit several upcoming Earth science missions including GEO-CAPE, GACM, and ACE by enabling broader spatial coverage and higher spectral resolution. FPAs for the PanFTS, a high spatial resolution Fourier transform spectrometer and a candidate instrument for the GEO-CAPE mission are the focus of the developments reported here, but this FPA technology has the potential to enable a variety of future measurements and instruments. The ESTO ACT Program funded the developed of a fast readout integrated circuit (ROIC) based on an innovative in-pixel analog-to-digital converter (ADC). The 128 X 128 pixel ROIC features 60 ?m pixels, a 14-bit ADC in each pixel and operates at a continuous frame rate of 14 kHz consuming only 1.1 W of power. The ROIC outputs digitized data completely eliminating the bulky, power consuming signal chains needed by conventional FPAs. The 128 X 128 pixel ROIC has been fabricated in CMOS and tested at the Jet Propulsion Laboratory. The current version is designed to be hybridized with PIN photodiode arrays via indium bump bonding for light detection in the visible and ultraviolet spectral regions. However, the ROIC design incorporates a small photodiode in each cell to permit detailed characterization of the ROICperformance without the need for hybridization. We will describe the essential features of the ROIC design and present results of ROIC performance measurements.

focal plane arrays (FPAs)↗

C30665L CD3740 Displacement Damage and Total Ionizing Dose Test Report

The purpose of this testing is to provide preliminary characterization of the displacement damage and total ionizing dose effects via 63 MeV protons on InGaAs PIN photodiodes fabricated and assembled by Excelitas for use in a LIDAR system. The testing is being conducted to determine the susceptibility of the component to the radiation environment that it will be exposed to during mission duration.

Landen D Ryder↗

Displacement Damage Induced Dark Current and Random Telegraph Signal in P-Type Deep-Trench Pinned Photogates

This study focuses on displacement damage induced dark current and Random Telegraph Signal (RTS) in STMicroelectronics P-Type photogate, a device moving away from the 4T Pinned-Photodiode, with a sensitive volume exclusively made of boron-doped P-type epitaxy, and collecting holes instead of electrons. Results show a typical trend for the shape of dark current and RTS degradation in CMOS Image Sensors with the exception that the measured generation rates seem 2 times smaller than typical literature values in irradiated silicon. Different hypothesis on the origin of this discrepancy are explored.

displacement damage dose↗

In Situ Identification of Mineral Resources with an X-Ray-Optical "Hands-Lens" Instrument

The recognition of material resources on a planetary surface requires exploration strategies not dissimilar to those employed by early field geologists who searched for ore deposits primarily from surface clues. In order to determine the location of mineral ores or other materials, it will be necessary to characterize host terranes at regional or subregional scales. This requires geographically broad surveys in which statistically significant numbers of samples are rapidly scanned from a roving platform. To enable broad-scale, yet power-conservative planetary-surface exploration, we are developing an instrument that combines x-ray diffractometry (XRD), x-ray fluorescence spectrometry (XRF), and optical capabilities; the instrument can be deployed at the end of a rover's robotic arm, without the need for sample capture or preparation. The instrument provides XRD data for identification of mineral species and lithological types; diffractometry of minerals is conducted by ascertaining the characteristic lattice parameters or "d-spacings" of mineral compounds. D-spacings of 1.4 to 25 angstroms can be determined to include the large molecular structures of hydrated minerals such as clays. The XRF data will identify elements ranging from carbon (Atomic Number = 6) to elements as heavy as barium (Atomic Number = 56). While a sample is being x-rayed, the instrument simultaneously acquires an optical image of the sample surface at magnifications from lx to at least 50x (200x being feasible, depending on the sample surface). We believe that imaging the sample is extremely important as corroborative sample-identification data (the need for this capability having been illustrated by the experience of the Pathfinder rover). Very few geologists would rely on instrument data for sample identification without having seen the sample. Visual inspection provides critical recognition data such as texture, crystallinity, granularity, porosity, vesicularity, color, lustre, opacity, and so forth. These data can immediately distinguish sedimentary from igneous rocks, for example, and can thus eliminate geochemical or mineral ambiguities arising, say between arkose and granite. It would be important to know if the clay being analyzed was part of a uniform varve deposit laid down in a quiescent lake, or the matrix of a megabreccia diamictite deposited as a catastrophic impact ejecta blanket. The unique design of the instrument, which combines Debye-Scherrer geometry with elements of standard goniometry, negates the need for sample preparation of any kind, and thus negates the need for power-hungry and mechanically-complex sampling systems that would have to chip, crush, sieve, and mount the sample for x-ray analysis. Instead, the instrument is simply rested on the sample surface of interest (like a hand lens); the device can interrogate rough rock surfaces, coarse granular material, or fine rock flour. A breadboard version of the instrument has been deployed from the robotic arm of the Marsokhod rover in field trials at NASA Ames, where large vesicular boulders were x-rayed to demonstrate the functionality of the instrument design, and the ability of such a device to comply with constraints imposed by a roving platform. Currently under development is a flight prototype concept of this instrument that will weigh 0.3 kg, using about 4500 J of energy per sample analysis. It requires about 5 min. for XRD analysis, and about 30 min. for XRF interrogation. Its small mass and rugged design make it ideal for deployment on small rovers of the type currently envisaged for the exploration of Mars (e.g., Sojourner-scale platforms). The design utilizes a monolithic P-N junction photodiode pixel array for XRD, a Si PIN photodiode/avalanche photodiode system for XRF, and an endoscopic imaging camera system unobtrusively embedded between the detectors and the x-ray source (the endoscope with its board-mounted camera can be adapted for IR light in addition to visible wavelenths. A rugged, miniature (7 cu cm) x-ray source for the instrument has already been breadboarded.

Marshall, J.↗

Photodiode-Coupled Light Modulator

Absorption of one light beam controls transmission of another. High-performance monolithic light modulator comprised of p-doped/intrinsic/n-doped (PIN) GaAs photodiode grown directly over InAs/GaAs PIN multiple-quantum-well (MQW) diode. Photodiode-coupled multiple-quantum-well modulator includes advanced semi-conductor microstructures enhancing electro-optical properties. Using standard lithographic and etching techniques for defining picture elements, structures fabricated into two-dimensional arrays for use as spatial light modulators.

Maserjian, Joseph↗

Quantum efficiency measurements for several waveshifter coatings in the extreme vacuum ultraviolet

Quantum efficiency measurements are given for coronene and liumogen coatings designed to enhance UV sensitivity for silicon charge coupled device imaging detectors. Coatings on quartz and on UDT PIN 10DP photodiodes were tested. The wavelength range extended from 153.7 to 50.0 nm in the vacuum ultraviolet. Similar measurements were made for coronene, liumogen, and stilbene-3 laser dye films on quartz disks relative to sodium salicylate. Sodium salicylate and coronene are the most efficient waveshifters down to 50 nm so far observed. Coronene's fairly constant quantum efficiency over such a wide wavelength range into the far VUV makes it a useful waveshifter for UV and VUV applications.

Butner, C. L.↗

Ionizing Radiation Effects on Hole Collection Backside-Illuminated P-Type Deep-Trench Pinned Photo-MOS Pixels under Image Acquisition

Dark current degradation, origins, and annealing behavior after x-ray irradiation are studied in a P-type, hole collecting, backside-illuminated image sensor currently being developed at STMicroelectronics and based on deep-trenched photo-MOS pixels. Different biasing conditions during irradiation, i.e. grounded or biased and sequenced, are compared. The dark current increase with total ionizing dose (TID) and the dark current annealing behavior seem to be driven by the backside interface between the P-epitaxy of the pixels and the ONO stack. Despite still being under development, this pixel architecture already exhibits both very good electro-optical performance and a better radiation hardness than pinned photodiode-based CMOS Image sensors that benefit from the same advanced CIS processing technologies. At high total dose range, the photogate challenges custom Radiation-Hardened-by-Design photodiodes by exhibiting a comparable radiation tolerance while bringing new features such as high-resolution or Correlated Double Sampling.

CMOS Image Sensor (CIS)↗

A payload to evaluate photodiodes for the detection of soft and hard x rays in a space environment using a Get Away Special

We propose to use the Get Away Special (GAS) facility to evaluate P-intrinsic-N (PIN) detectors and avalanche photodiodes (APD's) for the detection of both solar and nonsolar soft and hard x rays. We would like to fly both types of silicon detectors for the direct detection of the x ray photons in the energy range from 1 to 30 keV with an energy resolution of about 1 keV. We would also like to use both types of photodiodes viewing CsI(Tl) scintillators to extend the energy range up to 1 MeV with -6 percent resolution at 660 keV. Solar flares would be detected with this instrumentation during periods of solar pointing providing high energy resolution spectra with high time resolution. Similar data would be obtained in the scanning mode on nonsolar transient and steady x ray sources with the same instrumentation. A commandable door over the detectors would be required to allow measurements to be made as low as 1 keV.

Desai, Upendra D.↗

Procedures for Tuning a Multiresonator Photonic Filter

Two procedures have been devised for tuning a photonic filter that comprises multiple whispering-gallery mode (WGM) disk resonators. As used here, tuning signifies locking the filter to a specific laser frequency and configuring the filter to obtain a desired high-order transfer function. The main problem in tuning such a filter is how to select the correct relative loading of the resonators to realize a prescribed filter function. The first of the two procedures solves this problem. As temperature gradients develop during operation, the spectra of individual resonators tend to drift, primarily because of the thermorefractive effect. Thus, there arises the additional problem of how to adjust the tuning during operation to maintain the desired transfer function. The second of the two procedures solves this problem. To implement the procedures, it is necessary to incorporate the resonators into an apparatus like that of Figure 1. In this apparatus, the spectrum of each resonator can be adjusted individually, via the electro-optical effect, by adjusting a bias voltage applied to that resonator. In addition, the positions of the coupling prisms and resonators can be adjusted to increase or reduce the gaps between them, thereby reducing or increasing, respectively, the optical coupling between them. The optical power (Pi) in resonator i is monitored by use of a tracking photodiode. Another tracking diode monitors the power reflected from the input terminal (Pr), and still others monitor the input power (Pin) and output power (Po). The readings of these photodiodes are used to guide the tuning adjustments described in this paper.

Matsko, Andrey↗

Monolithic III-V/Silicon Spatial Light Modulator

Current techniques for growth of device-quality GaAs on silicon substrates enables fabrication of silicon-based version of photodiode-coupled spatial light modulator. Monolithic photodiode-coupled light-modulator array constructed on silicon substrate by growing InAs/GaAs multiple-quantum-wells over silicon PIN diode layer. Intermediate GaAs buffer layer confines attice-misfit dislocations to vicinity of silicon. Use of silicon makes available wider range of auxiliary on-chip signal-processing circuitry for coding and decoding of data, addition or subtraction of brightness levels, spatial reformatting, and rescaling.

Maserjian, Joseph↗

A fiber-optic technique for the measurement of contact angle in a clearance-fit pin-loaded hole

A fiber-optic technique for measuring contact angle during pin loading of a specimen is proposed. The experimental design and procedures for loading a 49.8-mm-diameter instrumented pin into an quasi-isotropic graphite-epoxy specimen are described. The optical fiber was located just above the surface of the pin outer diameter in order to obtain accurate pin-hole contact-angle measurements at increasing load levels. The movement of the optical fiber through the no-contact, contact, and no-contact regions is discussed; the photodiode output decreased monotonically as the fiber moved from the no-contact to the contact region and then decreased monotonically as the fiber moved from the contact region to the no-contact region. Variations in the contact angle measurements are examined as function of applied load level. The measurements are compared to contact angle values obtained using a finite element analysis and an electrical technique; it is determined that the data correlate well.

Prabhakaran, R.↗

Demonstration of the First 4H-SiC EUV Detector with Large Detection Area

Ultraviolet (UV) and Extreme Ultraviolet (EUV) detectors are very attractive in astronomy, photolithography and biochemical applications. For EUV applications, most of the semiconductor detectors based on PN or PIN structures suffer from the very short penetration depth. Most of the carries are absorbed at the surface and recombined there due to the high surface recombination before reach the depletion region, resulting very low quantum efficiency. On the other hand, for Schottky structures, the active region starts from the surface and carriers generated from the surface can be efficiently collected. 4H-Sic has a bandgap of 3.26eV and is immune to visible light background noise. Also, 4H-Sic detectors usually have very good radiation hardness and very low noise, which is very important for space applications where the signal is very weak. The E W photodiodes presented in this paper are based on Schottky structures. Platinum (Pt) and Nickel (Ni) are selected as the Schottky contact metals, which have the highest electron work functions (5.65eV and 5.15eV, respectively) among all the known metals on 4H-Sic.

Xin, Xiaobin↗