On the Role of Power Electronics and Power Conversion Systems in Grid-Energy Storage.
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With the increasing penetration level of renewable sources and power electronics loads in modern power systems, accurate and computationally efficient models are needed. Black-box model (BBM) could be a useful method in such systems. However, not very extensive research efforts have been made for power electronics BBM so far, and existing works mostly focus on steady-state operation, neglecting the important transient behaviors such as load transients, voltage transients, and faults. This paper presents a comparative study of three commonly used nonlinear BBM approaches for transient behaviors of power electronics converters. Comparison methods are proposed, and the evaluations are conducted under different transients using a grid-connected single-phase photovoltaic inverter. The findings of this study provide valuable references for further feasibility investigations on implementing BBMs in large-scale power electronics-rich power systems.
Here, this paper quantifies the impact of distributed power electronics in photovoltaic (PV) systems in terms of end-of-life energy-capture performance and reliability. The analysis is based on simulations of PV installations over system lifetime at various degradation rates. It is shown how module-level or submodule-level power converters can mitigate variations in cell degradation over time, effectively increasing the system lifespan by 5-10 years compared with the nominal 25-year lifetime. An important aspect typically overlooked when characterizing such improvements is the reliability of distributed power electronics, as power converter failures may not only diminish energy yield improvements but also adversely affect the overall system operation. Failure models are developed, and power electronics reliability is taken into account in this work, in order to provide a more comprehensive view of the opportunities and limitations offered by distributed power electronics in PV systems. Lastly, it is shown how a differential power-processing approach achieves the best mismatch mitigation performance and the least susceptibility to converter faults.
The power electronics industry is currently undergoing a major transition by replacing silicon devices with wide-bandgap devices. Gallium oxide devices have the potential to accelerate this transition by offering comparable or even superior performance to other wide-bandgap devices, but at a much lower cost. Recent breakthroughs include demonstration of a laboratory-scale gallium oxide transistors and diodes; however, a functional power electronics package for these devices is yet to be developed. In this paper, the research methodology in designing an electronics package for gallium oxide devices is outlined. Finite element-based thermal and thermomechanical modeling simulations were conducted to realize a package design that meets the combined target of minimal thermal resistance and improved reliability. Different package designs that include various material combinations and cooling configurations were explored, and their thermal and thermomechanical performance are reported. Furthermore, the short-circuit withstanding capabilities of gallium oxide devices were studied and compared with silicon carbide.
In this paper a new concept of multiport modular medium-voltage power electronics hub (M3PE-HUB) is introduced for future power grid. The goal for this project is to design, develop, and demonstrate foundational technologies and capabilities for multiport power electronics energy hubs that can serve as intelligent devices to coordinate and control several different sources and loads. In this paper, the architecture of the controller, the central controls, and its verification is presented.
Large power electronics systems like multi-port autonomous reconfigurable solar power plant (MARS) are increasingly being researched upon to integrate emerging energy sources. MARS connects photovoltaic (PV) systems and energy storage systems (ESSs) to high-voltage direct current (HVdc) links/grids and high-voltage alternating current (ac) transmission grids. As these large power electronics systems incorporate complex hierarchical control systems that are close-by and communicate fast, the control systems require an unique power electronic hardware-in-the-loop (PE-HIL) real-time architecture to evaluate individual controllers. In this paper, a PE-HIL real-time architecture is proposed to evaluate one of the hundreds to thousands of digital signal processors (DSPs) that are a part of the complex hierarchical control system. The DSP connects to a central processing unit (CPU) and a field programmable gate array (FPGA) that form a part of the upper levels of the control system. The DSP is part of the lower level of the control system. The proposed PE-HIL architecture is tested and evaluated. Preliminary test results are presented to showcase the concept.
Power electronics are critical for a sustainable energy future, playing a key role in electrification and integration of renewable energy sources into the grid. Advances in ultrawide band gap materials are needed to handle higher powers in smaller form factors while reducing electrical and thermal losses. High Al content Al x Ga 1 − x N is theoretically capable of meeting these demands, but its impact in power electronics has been severely restricted by a lack of substrates that can satisfy conductivity, lattice matching, and/or thermal expansion requirements. We demonstrate that electrically conductive Ta C can be used as a virtual substrate for Al x Ga 1 − x N heteroepitaxy. Scaleably sputtered Ta C grown on Al 2 O 3 , followed by high-temperature face-to-face annealing, produces a thin film Ta C template with an effective hexagonal lattice constant matched to Al 0.70 Ga 0.30 N . Annealing of the Ta C promotes recrystallization, significantly improving crystallinity and reducing crystalline defects from as-deposited columnar grains to a step-and-terrace surface morphology, enabling the subsequent growth of high-quality Al 0.70 Ga 0.30 N by molecular beam epitaxy. X-ray diffraction and scanning transmission electron microscopy confirm that the Al x Ga 1 − x N layer is heteroepitaxially aligned, strain-free, and lattice-matched, transitioning abruptly from Ta C to Al x Ga 1 − x N without intermediate phases. These results demonstrate Ta C virtual substrates as electrically conductive, lattice-matched, and thermally compatible templates for vertical Al x Ga 1 − x N devices that can meet the growing power needs of a sustainable energy future. Published by the American Physical Society 2024
Dynamic wireless power transfer (DWPT) can provide energy to EVs in motion and extend the drive range. Upscaling the charging power to 200 kW (High Power DWPT) reduces the percentage of electrified roadway required, and the solution becomes cost-effective. To smooth the power at the battery and grid, a secondary regulation stage must be added. The DWPT system therefore relies on power electronics to interface with the coils and regulate the power flow. Designing this high power system using wide bandgap devices makes ensuring high efficiency, small size, and reliable operation very challenging, and significant engineering effort is required to build such complicated systems for large-scale installation and deployment. Here, this paper describes a modular design approach for the power electronics to achieve the 200 kW wireless power transfer. As described, the SiC power electronics building block is designed, simulated, and characterized. The approach is validated in the DWPT system to build the inverter, the rectifier, and the DC/DC converter, which demonstrated high performance and reliable operation with 188 kW power.
“Ultra” wide-bandgap semiconductors are an emerging class of materials with bandgaps greater than that of gallium nitride (EG > 3.4 eV) that may ultimately benefit a wide range of applications, including switching power conversion, pulsed power, RF electronics, UV optoelectronics, and quantum information. This paper describes the progress made to date at Sandia National Laboratories to develop one of these materials, aluminum gallium nitride, targeted toward high-power devices. The advantageous material properties of AlGaN are reviewed, questions concerning epitaxial growth and defect physics are covered, and the processing and performance of vertical- and lateral-geometry devices are described. The paper concludes with an assessment of the outlook for AlGaN, including outstanding research opportunities and a brief discussion of other potential applications.
Insulated gate bipolar transistor (IGBT) power modules are devices commonly used for switching of high voltages and currents. Usage and environmental conditions can cause these power modules to degrade over time, and this gradual process may eventually lead to catastrophic failure of the device. This degradation process may cause some early performance symptoms related to the state of health of the power module, making it possible to detect reliability degradation of the IGBT module. Testing can be used to accelerate this process, permitting a rapid determination of whether specific declines in device reliability can be characterized. In this study, thermal cycling was conducted on multiple power modules simultaneously in order to assess the effect of thermal cycling on the degradation of the power module. In-situ monitoring of temperature was performed from inside each power module using high temperature thermocouples. Device imaging and characterization was performed along with temperature data analysis, to assess failure modes and mechanisms within the power modules. While the experiment was aimed to assess the potential damage effects of thermal cycling on die attach, results indicated that wirebond degradation was the life limiting failure mechanism.
This is a generic tester developed in c++ for testing the power electronics components and its controls in the power system.
The increasing penetration of power electronics in power grids significantly raises the computing requirements in a real-time (and/or fast) simulation of the power grid. The real-time simulation is an enabler for evaluating controllers, protection systems, new equipment, and twinning. In this paper, emerging computing architectures such as tensor processing units (TPU), neural/neuromorphic processing units (NPU), and quantum processing units (QPU) are introduced and characterized for the real-time (and/or fast) simulation of power electronics-dominated power grids. The metrics and the process to characterize emerging computing architectures to perform real-time (and/or fast) simulations of future power grids with power electronics are discussed. Three of the emerging computing units are characterized based on these metrics and the process developed. This characterization will enable identification and comparison of emerging computing architectures that can perform real-time (and/or fast) simulation of future power grids.
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The advanced power electronics and electric machines (APEEM) research group at the National Renewable Energy Laboratory (NREL) has developed world-class experimental and modeling capabilities for designing and evaluating efficient and reliable power electronics and electric machines thermal management systems. They also design, fabricate and characterize advanced power electronics packaging, and are developing state-of-health monitoring techniques. These researchers deliver safe, reliable, high performing, power-dense components that allow seamless integration between renewable energy sources, electric transportation, and the grid, helping to make widespread electric vehicle (EV) adoption and greenhouse gas emissions reduction more feasible. This document outlines the group's major capabilities in the areas of power electronics; module development and characterization; thermal modeling and management; thermomechanical reliability analysis of devices, modules, inverters/converters, and electric machines; physics-of-failure-based reliability analysis; and microelectronics. It also overviews the group's state-of-the-art equipment for fluid-based thermal management; thermal measurement & characterization; thermomechanical reliability analysis; micro- and power electronics measurement & characterization; and prototype fabrication, as well as the group's world-class modeling and simulation capabilities.