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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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29 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Cost-optimized energy storage operation for a grid-connected solar PV system at community and individual scales

This study provides a comparative analysis of grid-connected PV-integrated battery storage at individual and community scales. The paper addresses the challenge of managing energy demand-generation mismatch by using a battery energy storage optimization algorithm, which minimizes operational costs while accounting for battery degradation. Also, this work introduces a broader evaluation basis that includes seasonal variability, grid exchange smoothness, and scalability across different battery capacities. Results show that community-scale storage more effectively dampens grid exchange power fluctuations and reduces system costs, particularly with moderate price differences between electricity buying and selling prices and low battery capacities. The paper also analyzes the impacts of static control versus cost-optimized battery system management. Here, it is shown that the gap in system costs between the cost-optimized and static control scenarios widens as the price difference increases.

25 ENERGY STORAGE↗
DOE OSTI2021

Understanding Improvements in Coalesced Epilayers Grown over Nanopatterned Substrates

Nanopatterned substrates provide opportunities for reducing costs of high-efficiency III-V devices through methods such as substrate reuse and growth on cheaper substrates. In this work, we aim to better understand some of the fundamental challenges of growing high quality III-V material on nanopatterned substrates. Through specific pattern orientations and control of overgrowth morphology, we report that smooth and defect-free coalesced III-V epilayers are attainable over nanopatterned GaAs substrates.

coalescense↗
DOE OSTI2025

Unified Universal Control and Coordination of Inverter-Based Resources, and Validation for a PV + Battery Hybrid Plant

As renewable energy deployment grows, hybrid power plants (HPPs) combining photovoltaic (PV) and battery systems must evolve to offer both energy and grid stability services. These systems typically include a mix of grid-following (GFL) and grid-forming (GFM) inverters, presenting unique coordination and control challenges. This Department of Energy–funded project developed and validated a Unified Universal Control and Coordination (UUCC) framework for such PV + battery hybrid plants, enabling seamless and stable operation, including ultrafast black start, autonomous synchronization, and robust frequency and voltage regulation, under different grid conditions. The project significantly advanced the understanding of inverter-based resource (IBR) control by developing and validating three complementary system-level approaches for hybrid GFL/GFM operation: 1. A combined Virtual Resistance (VR)-based GFL and Virtual Oscillator Control (VOC)-based GFM method, where each inverter type is governed by a specialized control strategy. Together, these achieve stable, fast-response coordination, eliminating inrush current and enabling smooth black start and grid synchronization across a wide range of grid strengths. 2. A Deadbeat-based UUCC strategy, which uses discrete-time, switching-cycle-level control for both GFL and GFM inverters. This approach replaces traditional PI/PLL control with a control parameter-free, high-bandwidth framework that supports stable LVRT and instantaneous synchronization under all conditions. 3. A benchmark comparison with Siemens’ commercial GFM microgrid controller, which provided a fast baseline platform. The commercial approach decoupled v & f control was implemented on a commercial microgrid controller.The baseline commercial benchmark helped highlight superior transient response and black start performance offered by the deadbeat and VOC approaches. These technical contributions offer substantial improvements over conventional inverter control schemes, which often rely on slow phase-locked loop (PLL)-based synchronization, require careful control parameters tuning, and prone to unstable in weak grids with GFL inverters and in stiff grid with GFM inverters therefore challenging for hybrid GFL+GFM under all grid conditions. The deadbeat-based UUCC framework enables simpler, faster, and more robust operation of hybrid IBR systems using wide-bandgap (WBG) devices such as SiC power semiconductors. The rapid expansion of hybrid distributed energy resources (DERs), including residential and commercial PV-BESS installations such as Tesla Powerwall, PV with vehicle-to-grid (V2G) capability, and other integrated configurations, presents complex operational challenges for medium-voltage radial distribution feeders. These networks are subject to frequent disturbances such as faults, switching operations, rapid reclosing sequences, and feeder reconfigurations, all of which introduce dynamic stress on IBRs. In addition, planned feeder segmentation and deliberate islanding for resilience will require DERs that can autonomously perform blackstart, establish voltage and frequency references, and resynchronize with the main grid. The advanced deadbeat-based UUCC control and blackstart functionalities developed in this project directly address these requirements, enabling decentralized and autonomous operation of inverter-dominated DERs in distribution systems under a wide range of fault and reconfiguration scenarios. From a public benefit perspective, these innovations enable more reliable and cost-effective integration of renewable energy into distribution networks. The ability to autonomously black start and stabilize grids under varying grid conditions support accelerates recovery from outages and support decentralized resilient energy systems. By reducing system complexity and improving performance, this project lays critical groundwork for future inverter-dominated power grids that are clean, reliable, and accessible to all.

14 SOLAR ENERGY↗
DOE OSTI2021

Control of Surface Morphology during the Growth of (110)-Oriented GaAs by Hydride Vapor Phase Epitaxy

We present a study of the effect of hydride vapor phase epitaxy (HVPE) growth conditions on the morphology of GaAs grown on vicinal and nominally exact (110) GaAs substrates. We evaluate epilayer surfaces using a combination of Nomarski microscopy and atomic force microscopy. The surface morphology strongly depends on the growth conditions employed, as well as the substrate orientation. On substrates offcut 3° toward (111)A, faceting generally develops under conditions in which the growth is Ga-limited, although Ga-limited growth is not the only requirement for faceting. Low growth temperatures lead to a faceted morphology, while higher growth temperatures favor smooth growth and facet-free morphology. We show that the surface morphology is kinetically controlled and that the tendency to facet correlates with the growth rate. 3D growth occurs on nominally exact substrates, resulting in hillock formation, but reduction of the group V precursor partial pressure results in smooth morphology. Overall, our results are consistent with models for step-bunching-induced surface faceting that invoke a negative Ehrlich–Schwoebel step-edge barrier.

(110) oriented GaAs↗
DOE OSTI2024

Planarizing Spalled GaAs(100) Surfaces by MOVPE Growth

III-V photovoltaic devices have demonstrated exceptional performance across various applications, with controlled crystal fracturing, known as controlled spalling, emerging as a promising method to reduce costs by enabling substrate reuse. Spalling GaAs(100) substrates, a commonly used substrate in III-V photovoltaics, results in faceted ridges that must be planarized to grow high-quality photovoltaic devices. Here, in this study, we demonstrate that a GaAs(100) wafer offcut toward [$0\bar{11}$] and spalled toward [$011$] can be efficiently planarized by growing C:GaAs by metal-organic vapor phase epitaxy (MOVPE) on the surface, with up to 95% of the nominally deposited material used to fill the valleys between ridges. We find that reducing the offcut to 2° enhances the planarizing capability of C:GaAs. A surface morphology model indicates that the density of surface dangling bonds significantly influences the growth evolution of undoped GaAs surfaces. In contrast, the model suggests that the effectiveness of C:GaAs as a smoothing layer stems from modifying the atomic surface structure and, consequently, the associated sticking coefficients of the facets, which can alter the evolution of surface morphology. Our findings provide guidelines for the epitaxial planarization of semiconductor surfaces and improve the understanding of MOVPE growth on nonplanar surfaces.

14 SOLAR ENERGY↗
DOE OSTI2023

Evaluating Recursive Blind Forecast Against API and Baseline: A Puerto Rican Case Study on Solar Irradiance for Normal and Extreme Weather

This paper leverages ongoing work in a community microgrid in Adjuntas, Puerto Rico to forecast global horizontal irradiance (GHI) and compare performance in normal and extreme weather. Given a positive correlation of 0.98 between GHI and PV power, forecasting GHI can be an effective, indirect forecast of photovoltaic (PV) power, especially in microgrids where the end-users, owners, operators, or other stakeholders are reluctant to share data for training or validation due to privacy and security concerns. A recursive one-shot (termed as "blind") forecast is, hence, formulated, wherein a gradient-boosted regression tree (GBR) is built to forecast GHI for a 7-day horizon in normal weather, and a 2-day horizon in extreme weather. To demonstrate its resilience, the architecture is trained on normal and hurricane weather GHI from 2002-2022. It is generalized on February 9-16, 2023, and on the landfall of Hurricane Nicole (Nov 4-5, 2022), respectively. Forecasts from GBR are compared against that from a satellite-based API resource and three baselines: persistence, averaging, and exponential smoothing. Results show GBR and persistence outperform sophisticated API in both types of weather for this case study.

Sundararajan, Aditya↗
DOE OSTI2022

In-situ Characterizations of Microstructural Degradation of Perovskite Solar Cells

Rapid progress has been achieved in perovskite solar cells (PSCs), and their efficiencies have improved from 3.8 % to 24.2 % in less than a decade. With low-cost processing, PSCs have shown exciting photovoltaic (PV) properties, such as effective optical absorption, a long carrier lifetime, and unique defect tolerance. While recent studies demonstrated improved stability up to 100 days, PSC technology is still challenged to meet the stringent industry requirements for commercialization. Despite considerable efforts, the underlying physical mechanisms for the inferior stability of PSCs are not well understood. One reason for this divergence is that many established measurement techniques (e.g., quantum efficiency, photoluminescence) probe the properties on length scales far greater than that of electronic and/or structural inhomogeneity (i.e., < 1 μm near grain boundaries) and therefore characterize convoluted and/or averaged properties. Ion/electron beam-based techniques have been extensively used to access the microstructures of PSCs, enabling atomic/nanoscale structural, chemical, optical, and electrical characterizations. For example, focused ion beam (FIB) milling produces an atomically smooth surface that minimizes the artifacts attributed to the surface roughness. FIB techniques can also create a well-defined cross-section of PSCs without mechanical damage in a physical cleaving sample preparation. While powerful, there are some concerns about possible beam damage of inorganic-organic perovskites via chemical-bond breakage and local heating. This project aims to comprehensively understand how the microstructural/interfacial properties of PSCs (e.g., Methylammonium Lead Iodide [MAPbI 3 ]) are modified under the irradiating ion beams. Specifically, we investigate the sub-surface properties of PSCs before and after Ar-ion beam injections. Kelvin probe force microscopy (KPFM) measures the contact potential differences (CPDs). Photoluminescence (PL) microscopy in conjunction with Finite-Difference Time-Domain (FDTD) simulations infers the formation of a “dead layer” (< 15 nm) on the subsurface of MAPbI 3 during Ar+ milling processes while preserving the initial bulk properties. The x-ray photoemission spectroscopy (XPS) confirms this modified surface is a lead-rich and iodine-deficient surface. We initiate customizing in-situ measurement setup while measuring the local optical and electrical properties of PSC under thermal (cooling, heating) and light stressors. Our results provide in-depth knowledge of the ion-beam impact on metal-halide perovskites and how this modified sub-surface impacts their properties under accelerated stressors of light and heat. Intensive Monte Carlo simulations of an electron beam interacting with PSCs provide the beam energy distribution in PSCs, proposing possible measurement conditions of using e-beam with minimizing beam damage. Our in-situ measurement platform can accommodate the diverse architecture of PSC devices for studying deterioration mechanisms under mixed environmental stressors.

14 SOLAR ENERGY↗
DOE OSTI2021

Development of High-Efficiency GaAs Solar Cells Grown on Nanopatterned GaAs Substrates

One approach to reducing the cost of high-efficiency III–V devices involves adding patterned layers to heteroepitaxial or homoepitaxial substrates to facilitate substrate removal and reuse. However, few studies have focused explicitly on high-quality devices grown over patterned substrates, which is required for any cost saving to be beneficial. In this work, we demonstrate the growth of high-efficiency GaAs solar cells on GaAs substrates patterned with an array of nanoscale SiOX mask stripes. We show that reducing the pattern dimensions to submicron length scales with nanoimprint lithography enables defect-free coalescence. By varying the growth conditions, faceting of the epilayer material during overgrowth of the patterned mask was also controlled. A V/III ratio of 200 during MOVPE overgrowth produced smooth coalesced epilayers, which is desirable for the growth of subsequent device layers. Inverted GaAs front homojunction devices grown on patterned GaAs(001) substrates achieved threading dislocation densities below 5 × 10 5 cm –2 and maintained >23% solar cell efficiencies at one sun illumination, equivalent to control devices grown on unpatterned epi-ready substrates.

14 SOLAR ENERGY↗
DOE OSTI2021

Planarization of Rough (100) GaAs Substrates via Growth by Hydride Vapor Phase Epitaxy

Wafer reuse techniques help offset the cost of III-V growth substrates by using a single wafer for multiple growths, but costly re-polishing after device removal limits the end benefit. In this work, we present planarization growth by hydride vapor-phase epitaxy (HVPE), a potentially low-cost growth technique, as a method of smoothing rough substrates for subsequent high-quality device growth without the need for polishing. First, we show there is a threshold for allowable substrate roughness without device degradation by comparing devices grown by organometallic vapor-phase epitaxy (OMVPE) on epi-ready polished and pre-polished substrates that did not have the final epi-ready polish. We then demonstrate successful smoothing with HVPE growth on substrates with different surface morphologies, with features ranging from general roughness to large facets. Initial devices grown by HVPE on a pre-polished substate showed no degradation compared to a control wafer, indicating that planarizing rough substrates through HVPE growth is a promising path toward being able to use rough substrates directly for growth, without costly polishing steps.

GaAs↗
DOE OSTI2021

Impacts of Mode Mixity on Controlled Spalling of (100)-Oriented Germanium

Controlled spalling is a technology to prepare single-crystal thin films of semiconductors by fracture with a subsurface crack propagating nearly parallel to the substrate surface. Practical applications require uniform thickness and a smooth surface across the whole film. Both wafer-scale and patterned-stressor-defined small-area spalling of germanium substrates are conducted experimentally and numerically. River line features are observed on spalled surfaces close to lateral edges of the spall, regardless of the spall direction and the size of the spalled area. Three-dimensional finite element method modeling shows the river lines are caused by mixed mode I?+?III loading near the lateral edges of spall and predicts a spall depth variation near the lateral edges of spall due to mixed mode I?+?II loading. The absolute range of river lines increases with lateral size of spall, while the relative range of river lines decreases, consistent with variations in mode mixity.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Remote Epitaxy of III-V Solar Cells via Hydride Vapor Phase Epitaxy

The promise of remote epitaxy, in which epitaxial registry of a film can still be maintained through two-dimensional layers, has emerged from an advanced understanding of the interactions between two dimensional materials and bulk semiconductors. A promising application of this technology is to facilitate substrate reuse in epitaxial III-V systems, which could significantly reduce material cost and improve commercial viability of this high-efficiency photovoltaic technology. In this process the weak van der Waal bonds between the 2D layer and the III-V substrate make separation of epitaxially-grown layers simple and leaves a smooth substrate that can be reused for cost reduction. Here we present a study of growth parameters of GaAs on AlGaAs through a low dimensional carbon interlayer via hydride vapor phase epitaxy (HVPE). We Investigate the effect of various GaAs nucleation conditions such as V/III ratio, temperature and growth rate on film roughness, crystallinity, and degree of epitaxial alignment. We demonstrate growth of single crystal GaAs layer on top of the low dimensional carbon that follow the crystal orientation of the substrate. Surface roughness measured via AFM found that lower V/III ratios result in smoother III-V films grown on the low dimensional carbon, with a lowest RMS of ~60 nm obtained at a V/III ratio of 5. Growth temperatures are optimized at 650 C, as temperatures below 550 C show non-crystalline growth and higher temperature samples display very rough surfaces. Additionally, we investigate HVPE growth on various forms of low-dimensional carbon including transferred graphene, CVD-grown graphene, and MOCVD-growth amorphous carbon and find the latter to be most well suited for III-V growth as this method results in cleaner interface and potential for direct, large-area coverage. We also identify techniques to mitigate surface degradation in carbon layers as a function of both exposure time and growth environment by analyzing surface changes via x-ray reflectivity. We show growth of heteroepitaxial III-V solar cells on carbon interlayers and preliminary cell results, which are currently limited to 4% efficiency under one sun.

AlGaAs↗