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Results for “Photoconductive materials”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Pulse compression photoconductive semiconductor switches

A photoconductive switch that uses materials that support negative differential mobility, whose operation leverages the pulse compression of a charge could to generate the “on” time of the pulse in combination with the speed of light to generate the “off” time of the pulse, is described. In one example, a method of operating a photoconductive switch, which includes two electrodes and a light absorbing material positioned therebetween, includes selecting a value for one or more parameters comprising a voltage for generation of an electric field, a spot size of a laser pulse, a temporal pulse width of the laser pulse, or an intensity of the laser pulse, wherein the selected value(s) for the one or more parameters enable the switch to operate in a region where the light absorbing material exhibits negative differential mobility, and illuminating the light absorbing material with the laser pulse to generate a charge cloud within the light absorbing material.

Voss, Lars F.↗
DOE OSTI2023

Nonlinear photoconductivities and quantum geometry of chiral multifold fermions

Here, chiral multifold fermions are quasiparticles that appear only in chiral crystals such as transition metal silicides in the cubic B20 structure (i.e., the CoSi family), and they may show exotic physical properties. Here we study the injection and shift photoconductivities and also the related geometrical quantities for several types of chiral multifold fermions, including spin-1/2 as well as pseudospin-1 and -3/2 fermions, dubbed as Kramers Weyl, triple-point, and Rarita-Schwinger-Weyl (RSW) fermions, respectively. We utilize the minimal symmorphic model to describe the triple-point fermions (TPF). We also consider the more realistic model Hamiltonian for the CoSi family including both linear and quadratic terms. We find that injection currents due to circularly polarized light are quantized as a result of the Chern numbers carried by the multifold fermions within the linear models. Surprisingly, we discover that in the TPF model, the linear shift conductivities, responsible for the shift current generation by linearly polarized light, are proportional to the pseudo spin-orbit coupling and independent of photon frequency. In contrast, for the RSW and Kramer Weyl fermions, the linear shift conductivity is linearly proportional to photon frequency. The numerical results agree with the power-counting analysis for quadratic Hamiltonians. The frequency independence of the linear shift conductivity could be attributed to the strong resonant symplectic Christoffel symbols of the flat bands. Moreover, the calculated symplectic Christoffel symbols show significant peaks at the nodes, suggesting that the shift currents are due to the strong geometrical response near the topological nodes.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Intrinsic Photoconductivity of few-layered ZrS 2 Phototransistors via Multiterminal Measurements

We report intrinsic photoconductivity studies on one of the least examined layered compounds, ZrS 2 .Few-atomic layer ZrS 2 field-effect transistors were fabricated on the Si/SiO 2 substrate and photoconductivity measurements were performed using both two- and four-terminal configurations under the illumination of 532 nm laser source. We measured photocurrent as a function of the incident optical power at several source-drain (bias) voltages. We observe a significantly large photoconductivity when measured in the multiterminal (four-terminal) configuration compared to that in the two-terminal configuration. For an incident optical power of 90 nW, the estimated photosensitivity and the external quantum efficiency (EQE) measured in two-terminal configuration are 0.5 A/W and 120%, respectively, under a bias voltage of 650 mV. Under the same conditions, the four-terminal measurements result in much higher values for both the photoresponsivity (R) and EQE to 6 A/W and 1400%, respectively. This significant improvement in photoresponsivity and EQE in the four-terminal configuration may have been influenced by the reduction of contact resistance at the metal-semiconductor interface, which greatly impacts the carrier mobility of low conducting materials. This suggests that photoconductivity measurements performed through the two-terminal configuration in previous studies on ZrS 2 and other 2D materials have severely underestimated the true intrinsic properties of transition metal dichalcogenides and their remarkable potential for optoelectronic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Dominant Role of Hole Transport Pathway in Achieving Record High Photoconductivity in Two‐Dimensional Metal–Organic Frameworks

Abstract Metal–organic frameworks (MOFs) with mobile charges have attracted significant attention due to their potential applications in photoelectric devices, chemical resistance sensors, and catalysis. However, fundamental understanding of the charge transport pathway within the framework and the key properties that determine the performance of conductive MOFs in photoelectric devices remain underexplored. Herein, we report the mechanisms of photoinduced charge transport and electron dynamics in the conductive 2D M−HHTP (M=Cu, Zn or Cu/Zn mixed; HHTP=2,3,6,7,10,11‐hexahydroxytriphenylene) MOFs and their correlation with photoconductivity using the combination of time‐resolved terahertz spectroscopy, optical transient absorption spectroscopy, X‐ray transient absorption spectroscopy, and density functional theory (DFT) calculations. We identify the through‐space hole transport mechanism through the interlayer sheet π–π interaction, where photoinduced hole state resides in HHTP ligand and electronic state is localized at the metal center. Moreover, the photoconductivity of the Cu−HHTP MOF is found to be 65.5 S m −1 , which represents the record high photoconductivity for porous MOF materials based on catecholate ligands.

14 SOLAR ENERGY↗
DOE OSTI2020

Extrinsic Absorption Pathways in Vanadium-Doped SiC Measured Using a Total Internal Reflection Geometry

Vanadium-doped SiC is under study for high-power photoconductive switches and is receiving increased attention as a potential material system for quantum computing, as the V can act as a quantum emitter at telecom wavelengths. Knowledge of the defect-mediated electronic transition pathways from sub-bandgap illumination in this material with low absorption and multi-photon and multi-path transition probability is important in optimizing quantum efficiency. Herein, the optical transitions of vanadium-doped SiC for two polytypes as a function of dopant concentration using a total internal reflection (TIR) geometry are examined. Furthermore, normalized quantum efficiency is reported and correlated with both dopant concentrations (V, N, B, and Al) measured by secondary ion mass spectroscopy (SIMS) and absorption measurements. Although both polytypes respond well to 532 nm light, efficiency at longer wavelengths does not correlate 1:1 with absorption coefficient and strongly depends on the polytype and net background co-dopant concentration. This has important implications for efficient excitation of both carriers for optoelectronics and for the use of V as a quantum emitter.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Monolithic optoelectronic circuit design for on-chip terahertz applications

We demonstrate a monolithic coplanar stripline platform for on-chip terahertz (THz) generation, transmission, and detection, addressing key challenges of mode purity, bandwidth, and referencing. Capacitive coupling of the photoconductive generator switch enforces pure odd-mode propagation, increases THz field strength, and extends the operational frequency range, achieving 0.05–1.4 THz. Our architecture enables fully monolithic fabrication with amorphous silicon switches, in situ field referencing, and galvanic isolation between generation and detection. Finite-element simulations and experiments confirm that suppressing parasitic modes improves signal integrity, providing a robust platform for high-fidelity THz spectroscopy, ultrafast electronics, and nanoscale quantum materials research.

Capacitive coupling↗
DOE OSTI2026

Conductivity Spectroscopy for Investigation and Discovery of Photovoltaic Materials

Conductivity spectroscopy is an extremely powerful set of methods for probing the properties of optoelectronic materials, especially photovoltaics, where photoconductivity is one of the best spectroscopic proxies for performance. Despite this power, they are substantially less commonly used than time-resolved photoluminescence (for instance) because they tend to be more expensive to implement (THz) and/or require specialized knowledge (GHz) to construct instruments, which are not widely available. The goal of this review is to illustrate the utility of these experiments in the discovery and study of photovoltaic absorber materials and simultaneously make them more accessible to the community by providing a central tutorial resource. We provide a comprehensive review of how conductivity spectroscopy has developed over the past decade and been applied in the discovery and development of photovoltaic materials, with a primary focus on emerging solution-processable technologies. Along the way we aim to demystify conductivity spectroscopy with focused tutorial sections that explain the physical models used to fit the data and illustrate how to think about “high-frequency conductivity”.

14 SOLAR ENERGY↗
DOE OSTI2021

A hybrid optoelectronic Mott insulator

The coupling of electronic degrees of freedom in materials to create “hybridized functionalities” is a holy grail of modern condensed matter physics that may produce versatile mechanisms of control. Correlated electron systems often exhibit coupled degrees of freedom with a high degree of tunability which sometimes lead to hybridized functionalities based on external stimuli. However, the mechanisms of tunability and the sensitivity to external stimuli are determined by intrinsic material properties which are not always controllable. A Mott metal-insulator transition (MIT) is technologically attractive due to the large changes in resistance, tunable by doping, strain, electric fields, and orbital occupancy but not, in and of itself, controllable with light. Here, an alternate approach is presented to produce optical functionalities using a properly engineered photoconductor/strongly correlated hybrid heterostructure. This approach combines a photoconductor, which does not exhibit an MIT, with a strongly correlated oxide, which is not photoconducting. Due to the intimate proximity between the two materials, the heterostructure exhibits giant volatile and nonvolatile, photoinduced resistivity changes with substantial shifts in the MIT transition temperatures. This approach can be extended to other judicious combinations of strongly correlated materials.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Dominant Role of Hole Transport Pathway in Achieving Record High Photoconductivity in Two‐Dimensional Metal–Organic Frameworks

Abstract Metal–organic frameworks (MOFs) with mobile charges have attracted significant attention due to their potential applications in photoelectric devices, chemical resistance sensors, and catalysis. However, fundamental understanding of the charge transport pathway within the framework and the key properties that determine the performance of conductive MOFs in photoelectric devices remain underexplored. Herein, we report the mechanisms of photoinduced charge transport and electron dynamics in the conductive 2D M−HHTP (M=Cu, Zn or Cu/Zn mixed; HHTP=2,3,6,7,10,11‐hexahydroxytriphenylene) MOFs and their correlation with photoconductivity using the combination of time‐resolved terahertz spectroscopy, optical transient absorption spectroscopy, X‐ray transient absorption spectroscopy, and density functional theory (DFT) calculations. We identify the through‐space hole transport mechanism through the interlayer sheet π–π interaction, where photoinduced hole state resides in HHTP ligand and electronic state is localized at the metal center. Moreover, the photoconductivity of the Cu−HHTP MOF is found to be 65.5 S m −1 , which represents the record high photoconductivity for porous MOF materials based on catecholate ligands.

Wang, Denan↗
NASA NTRS1968

Improved radiographic image amplifier panel

Layered image amplifier for radiographic /X ray and gamma ray/ applications, combines very high radiation sensitivity with fast image buildup and erasure capabilities by adding a layer of material that is both photoconductive and light-emitting to basic image amplifier and cascading this assembly with a modified Thorne panel.

Brown, R. L., Sr.↗
NASA NTRS1978

Characterization of nonideal silicon in terms of lifetime and diffusion length

Experimental methods have been evaluated for the determination of lifetime and diffusion length in silicon intentionally doped with potentially lifetime-degrading impurities which may be present in low-cost silicon intended for use in terrestrial flat-plate arrays. Results obtained with these methods have been compared for mutual consistency. The effects of a number of impurities on bulk lifetime were determined from steady-state photoconductivity, and solar cells fabricated from this material were characterized in terms of diffusion length using a penetrating light technique. Comparison was made with results obtained by others using photoconductivity decay. General agreement was found in terms of the hierachy of impurities to which the lifetime is sensitive. The utility of the steady-state photoconductivity method is established even in the presence of considerable trapping.

Othmer, S.↗
DOE OSTI2023

Extreme γ –Ray Radiation Tolerance of Spectrometer–Grade CsPbBr 3 Perovskite Detectors

The perovskite compound CsPbBr 3 has recently been discovered as a promising room-temperature semiconductor radiation detector, offering an inexpensive and easy-to-manufacture alternative to the current benchmark material Cd 1–x Zn x Te (CZT). The performance of CsPbBr 3 sensors is evaluated under harsh conditions, such as high radiation doses often found in industrial settings and extreme radiation in space. Results show minimal degradation in detector performance after exposure to 1 Mrad of Co-60 gamma radiation, with no significant change to energy resolution or hole mobility and lifetime. Additionally, many of the devices are still functional after being exposed to a 10 Mrad dose over 3 days, and those that do not survive can still be refabricated into working detectors. Notably, these results suggest that the failure mode in these devices is likely related to the interface between the electrode and material and their reaction, or the electrode itself and not the material itself. Overall, the study suggests that CsPbBr 3 has high potential as a reliable and efficient radiation detector in various applications, including those involving extreme fluxes and energies of gamma-ray radiation.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Ultrafast terahertz spectroscopy provides insight into charge transfer efficiency and dynamics in artificial photosynthesis

Terahertz (THz) spectroscopy provides a noncontact method to measure the ultrafast dynamics and photoconductivity of mobile carriers in semiconducting materials. This has proven useful in studying artificial photosynthesis devices which use semiconductor photoelectrodes. In this work, we present a brief introduction to optical-pump THz-probe (OPTP) spectroscopy, a technique that provides unique and useful insight into interfacial electron transfer (from the surface-attached dye to the conduction band of the semiconductor) in dye-sensitized photoelectrochemical cells. Compared with more familiar methods like visible transient absorption spectroscopy, OPTP spectroscopy stands out in offering both sub-picosecond time resolution as well as sensitivity to mobile carriers (electrons and holes) in the semiconductor portion of artificial photosynthesis devices. The mobile carriers are crucial to device performance as only they pass to the other half cell to complete the reaction. In order to highlight these advantages and illustrate the types of questions OPTP spectroscopy can address, we discuss three case studies. In the first, OPTP spectroscopy is used to measure the injection rates from a set of six different dyes, revealing the effect of the energetics and lifetimes of the dye excited states on interfacial electron transfer. The subsequent case studies investigate the influence of varying the moieties which bind to the surface (anchors), as well as the moieties that connect the chromophore with these anchors (linkers). OPTP spectroscopy was used to measure the interfacial electron transfer rate as these moieties were varied.

59 BASIC BIOLOGICAL SCIENCES↗
NASA NTRS1983

Lead sulfide - Silicon MOSFET infrared focal plane development

A process for directly integrating photoconductive lead sulfide (PbS) infrared detector material with silicon MOS integrated circuits has been developed primarily for application in long (greater than 10,000 detector elements) linear arrays for pushbroom scanning applications. The processing technology is based on the conventional PMOS and CMOS technologies with a variation in the metallization. Results and measurements on a fully integrated eight-element multiplexer are shown.

Barrett, J. R.↗
DOE OSTI2022

Role of defects in ultra-high gain in fast planar tin gallium oxide UV-C photodetector by MBE

Here we report ultra-high responsivity of epitaxial (Sn x Ga 1–x ) 2 O 3 (TGO) Schottky UV-C photodetectors and experimentally identified the source of gain as deep-level defects, supported by first principles calculations. Epitaxial TGO films were grown by plasma-assisted molecular beam epitaxy on (–201) oriented n-type β-Ga 2 O 3 substrates. Fabricated vertical Schottky devices exhibited peak responsivities as high as 3.5 ×10 4 A/W at –5 V applied bias under 250 nm illumination with sharp cutoff shorter than 280 nm and fast rise/fall time in milliseconds order. Hyperspectral imaging cathodoluminescence (CL) spectra were examined to find the mid-bandgap defects, the source of this high gain. Irrespective of different tin mole fractions, the TGO epilayer exhibited extra CL peaks at the green band (~2.20 eV) not seen in β-Ga 2 O 3 along with enhancement of the blue emission-band (~2.64 eV) and suppression of the UV emission-band. Based on hybrid functional calculations of the optical emission expected for defects involving Sn in β-Ga 2 O 3 , V Ga –Sn complexes are proposed as potential defect origins of the observed green and blue emission-bands. Such complexes behave as acceptors that can efficiently trap photogenerated holes and are predicted to be predominantly responsible for the ultra-high photoconductive gain in the Sn-alloyed Ga 2 O 3 devices by means of thermionic emission and electron tunneling. Regenerating the V Ga –Sn defect complexes by optimizing the growth techniques, we have demonstrated a planar Schottky UV-C photodetector of the highest peak responsivity.

36 MATERIALS SCIENCE↗
DOE OSTI2024

High Mobility, High Carrier Density SnSe 2 Field‐Effect Transistors with Ultralow Subthreshold Swing and Gate‐Controlled Photoconductance Switching

2D and layered semiconductors are considered as promising electronic materials, particularly for applications that require high carrier mobility and efficient field-effect switching combined with mechanical flexibility. To date, however, the highest mobility has been realized primarily at low carrier concentration. Here, it is shown that few-layer/multilayer SnSe 2 gated by a solution top gate combines very high room-temperature electron mobility (up to 800 cm 2 V −1 s −1 ), along with large on-off current ratios (>10 5 ) and a subthreshold swing below the thermodynamic limit (50 mV per decade) in field-effect devices, at exceptionally large sheet carrier concentrations of ≈10 13 cm −2 . Observed mobility enhancements upon partial depletion of the channel point to near-surface defects or impurities as the mobility-limiting scattering centers. Under illumination, the resulting gap states give rise to gate-controlled switching between positive and negative photoconductance. The results qualify SnSe 2 as a promising layered semiconductor for flexible and wearable electronics, as well as for the realization of advanced approaches to photodetection.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Photothermoelectric effect in cadmium arsenide thin films for unbiased, mid-infrared photodetection

Mid-infrared photodetectors that can operate at room temperature are of great interest for a wide range of applications. Here, we demonstrate unbiased, mid-infrared (10.4 μm) photodetection in epitaxial thin films of the three-dimensional Dirac semimetal cadmium arsenide (Cd 3 As 2 ), which are grown on a III–V heterostructure. We show that the photocurrent response of planar metal–Cd 3 As 2 –metal devices is consistent with the photothermoelectric effect, which is due to a temperature gradient that develops under asymmetric illumination of the device. We show that the photoresponsivity of Cd 3 As 2 channel devices is an order of magnitude greater than devices with a III–V semiconductor channel, attesting to the excellent thermoelectric properties of Cd 3 As 2 and promising efficient unbiased, room-temperature mid-infrared photodetection.

36 MATERIALS SCIENCE↗