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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1985

Chemistry of MOS-LSI radiation hardening

The objective of this task was to obtain chemical information on MOS test samples. Toward this end, high resolution X-ray photoemission spectroscopy (XPS) has been the primary techniques used to characterize the chemistry and structure of the SiO2/Si interface for a variety of MOS structures with differing degrees of susceptibility to damage by ionizing radiation. The major accomplishments of this program are: (1) the identification of a structurally distinct region of SiO2 in the near-interfacial region of thermal SiO2 on Si; (2) the identification in the near-interfacial region of SiO2 structural differences between radiation hard and soft gate oxides; (3) the direct observation of radiation-induced damage sites in thermal SiO2 with XPS using in situ electron stress; (4) the correlation of suboxide state distributions at the SiO2/Si interface with processing parameters and radiation susceptibility; (5) the development of a chemical mechanism for radiation-induced interface state generation in SiO2/Si structures; and (6) the development benign chemical profiling techniques which permit the investigation of oxide/semiconductor structures using surface sensitive electron spectroscopic techniques.

Grunthaner, P.↗
NASA NTRS1984

The nature of chemisorbed oxygen on Ni(100) and Cu(100)

Model calculations indicate two low-lying states for the interaction of O with Ni and Cu(100). The oxide state is approximately 1 eV more stable and its R(perpendicular) for Ni(100) is consistent with the experimental value for Ni(100), indicating only one type of stable chemisorption bond. This agrees with XPS (X-ray photoemission spectroscopy) and EXAFS (extended X-ray absorption fine structure) data for the observed LEED (low energy electron diffraction) structures. Interpretations of EELS (electron energy loss spectroscopy) data in terms of a radical state forthe p(2x2) and the oxide state for the c(2x2) structure must be seriously questioned.

Bauschlicher, C. W., Jr.↗
NASA NTRS1986

Sputtering and native oxide formation on (110) surfaces of Cd(1-x)Mn(x)Te

Native oxides on the surface of Cd(1-x)Mn(x)Te (X between 0 and 0.7) have been analyzed on the basis of X-ray photoemission spectroscopy measurements. Depth profile analysis revealed a significant increase in the thickness at higher Mn concentrations and a strong Mn segregation to the surface, respectively. Sputter-induced damage on cleaved (110)-oriented surfaces was analyzed by photoreflectance and photoluminescence measurements. The damage was found to be larger on CdTe than on the alloy. Thermal annealing showed nearly complete restoration for the surface of the alloy, while CdTe revealed irreversible modifications in the near-surface regime upon sputtering and post annealing.

Neff, H.↗
NASA NTRS1987

The localization and crystallographic dependence of Si suboxide species at the SiO2/Si interface

X-ray photoemission spectroscopy has been used to examine the localization and crystallographic dependence of Si(+), Si(2+), and Si(3+) suboxide states at the SiO2/Si interface for (100)and (111)-oriented substrates with gate oxide quality thermal oxides. The Si(+) and Si(2+) states are localized within 6-10 A of the interface while the Si(3+) state extends about 30 A into the bulk SiO2. The distribution of Si(+) and Si(2+) states shows a strong crystallographic dependence with Si(2+) dominating on (100) substrates and Si(+) dominating on (111) substrates. This crystallographic dependence is anticipated from consideration of ideal unreconstructed (100) and (111) Si surfaces, suggesting that (1) the Si(+) and Si(2+) states are localized immediately within the first monolayer at the interface and (2) the first few monolayers of substrate Si atoms are not significantly displaced from the bulk. The total number of suboxide states observed at the SiO2/Si interface corresponds to 94 and 83 percent of a monolayer for these (100) and (111) substrates, respectively.

Grunthaner, P. J.↗
NASA NTRS1987

Determination of a natural valence-band offset - The case of HgTe and CdTe

A method to determine a natural valence-band offset (NVBO), i.e., the change in the valence-band maximum energy which is intrinsic to the bulk band structures of semiconductors is proposed. The HgTe-CdTe system is used as an example in which it is found that the valence-band maximum of HgTe lies 0.35 + or - 0.06 eV above that of CdTe. The NVBO of 0.35 eV is in good agreement with the X-ray photoemission spectroscopy measurement of the heterojunction offset. The procedure to determine the NVBO between semiconductors, and its implication on the heterojunction band lineup and the electronic structures of semiconductor alloys, are discussed.

Shih, C. K.↗
NASA NTRS1987

II-VI and I-III-VI2 alloy crystals for photovoltaic applications

The results of the photoreflectance, photoconductivity, and photoluminescence studies on Mn(x)Cd(1-x)Te single crystals are discussed from the viewpoint of the utility of these compounds as gap components in multijunction solar cells. Attention is also given to recent results on CuInSe2 and on quaternary I-III-VI2 alloys based on CuInSe2. Recent Kelvin probe and X-ray photoemission spectroscopy studies of the surface properties of CuInSe2 and Mn(x)Cd(1-x)Te, respectively, are described. In addition, recent results on the radiation damage and annealing kinetics of Mn(x)Cd(1-x)Te are considered in the context of future work on the sputtering and ion beam deposition of thin films of this material.

Bachmann, K. J.↗
NASA NTRS1989

Research and development of HgZnTe as an infrared material

Interfacial morphology and Fermi level pinning behavior at the interfaces of Al, Ag, and Pt with UHV-cleaved CdTe and ZnTe have been studied using X-ray and ultraviolet photoemission spectroscopies. Results are compared to metal/HgCdTe interface formation, where the weak HgTe bond and consequent ease of Hg loss strongly influence semiconductor disruption and metal-semiconductor intermising. For Al/CdTe, the strong Al-Te reaction yields a significantly more extensive Al-Te reacted region than has been observed for HgCdTe. The Al/ZnTe interface is observed to be more abrupt than Al/CdTe. The final Fermi level pinning positions, Ef-Evbm for Al, Ag, and Pt on p-type CdTe and p-ZnTe have been determined. Efi is found to be roughly the same for both CdTe and ZnTe, with the value for ZnTe lying approximately 0.2 eV closer to the VBM for all three metals. From these results, one would expect Schottky barriers of about the same height for these metals on p-CdTe and p-ZnTe; and also that, in principle, metal interfaces with the two alloys HgCdTe and HgZnTe would have the same properties. Comparisons and implications for electrical behavior of metal contacts to the alloys are discussed.

Wahi, A. K.↗
NASA NTRS1989

Degradation and crosslinking of perfluoroalkyl polyethers under X-ray irradiation in ultrahigh vacuum

Degradation of three types of commercially available perfluoroalkyl polyethers (PFPE)-Demnum S200, Fomblin Z25, and Krytox 16256-by X-ray irradiation was studied by using X-ray photoemission spectroscopy (XPS) and a mass spectrometer under ultra-high-vacuum conditions. The carbons in the polymers were characterized by chemical shifts of Cls binding energies. Gaseous products containing COF2 and low-molecular-weight fluorocarbons were formed. From Fomblin Z25, which has acetal linkages (-OCF2O-), a large quantity of COF2 gas was evolved. Liquid products became tacky after a long irradiation time, and some did not dissolve in Freon. High-pressure liquid chromatography (HPLC) showed that molecular weight distribution became broader and that higher molecular weight polymers were formed from Demnum and Krytox. We concluded from these results that degradation and cross-linking took place simultaneously. Demnum crosslinked more easily than the other fluids. The time dependence of both XPS spectra of Cls and mass spectra showed that C-O-bonded carbons in PFPE'S were removed faster than other carbons. There was no substrate effect on the degradation reaction because the first-order rate constants calculated from the change of gaseous products were similar when stainless steel (440C) and gold-coated surfaces were used. Metal fluorides were formed on stainless steel during the reaction. A mechanism for the degradation of PFPE'S is discussed on the basis of their molecular structures.

Mori, Shigeyuki↗
NASA NTRS1989

CdTe and ZnTe metal interface formation and Fermi-level pinning

Interfacial morphology and Fermi-level pinning behavior at the interfaces of Al, Ag, and Pt with UHV-cleaved CdTe and ZnTe are studied using X-ray photoelectron and ultraviolet photoemission spectroscopies. Results are compared to metal/HgCdTe interface formation. For Al/CdTe, a case is found where significantly greater intermixing occurs in CdTe than seen on HgCdTe. The Al/ZnTe interface is also more abrupt than Al/CdTe. Band bending results for interfaces of all three metals with p-CdTe and p-ZnTe are presented and implications for metal/HgZnTe interface formation are considered.

Wahi, A. K.↗
NASA NTRS1990

Preparation and characteristics of superconducting cuprate thin films: Nd(2-x)Ce(x)CuO4 and substituted Bi-system

Characteristics of the electron-doped-type Nd(2-x)Ce(x)CuO4 systems and substituted Bi2(Sr,Ln)3Cu2Oy system were systematically studied using the high quality thin-film samples. The Nd(2-x)Ce(x)CuO4 thin films with various Ce concentrations, x, were prepared by RF magnetron sputtering on SrTiO3 heated at around 500 C. After subsequent annealing at 1100 C in air, the films showed the c-axis orientation normal to the substrates. By means of the reducing treatment (annealing in a vacuum), superconductivity was induced for the films with 0.14 is less than or equal to x is less than or equal to 0.18. The superconductivity and transport properties of the films were strongly affected by the reducing treatment. The x = 0.15 film exhibited a sharp superconducting transition with zero resistivity at 22 K, in consistent with the diamagnetic properties. The resistivity of the films was fairly low with metallic characteristics, and the sight of the Hall coefficient was negative in the normal state. On the other hand, the normal-state optical measurements showed that the undoped Nd2CuO4 is a semiconductor with a charge transfer gap of 1.3 eV, and that, when Ce ions were doped, a plasma reflection due to the free-carriers came to be seen with the plasma frequency of 1.07 eV for 0.14 is less than or equal to x is less than or equal to 0.18. Moreover, x ray photoemission study revealed that the Cu valence of the film decreased for 2(+) for x = 0 to 1(+) for x = 0.15. These physical properties are in contrast with those of hole-doped-type cuprate superconductors. Bi2(Sr,Ln)3Cu2Oy thin films were also prepared on MgO substrates heated at 600 to 700 C by similar methods. It was found that the growth conditions for Bi-systems with two CuO2 planes were different for each composition and species of lanthanoid in the films. Moreover, preparation of Bi-system with three CuO2 planes was very difficult when lanthanoid atoms were doped in the system. Their electric transport properties and x ray photoemission spectroscopy were investigated. Carrier concentration and Cu valence were discussed with regard to the superconductivity.

Adachi, H.↗
NASA NTRS1993

Visible photoluminescence of porous Si(1-x)Ge(x) obtained by stain etching

We have investigated visible photoluminescence (PL) from thin porous Si(1-x)Ge(x) alloy layers prepared by stain etching of molecular-beam-epitaxy-grown material. Seven samples with nominal Ge fraction x varying from 0.04 to 0.41 were studied at room temperature and 80 K. Samples of bulk stain etched Si and Ge were also investigated. The composition of the porous material was determined using X-ray photoemission spectroscopy and Rutherford backscattering techniques to be considerably more Ge-rich than the starting epitaxial layers. While the luminescence intensity drops significantly with the increasing Ge fraction, we observe no significant variation in the PL wavelength at room temperature. This is clearly in contradiction to the popular model based on quantum confinement in crystalline silicon which predicts that the PL energy should follow the bandgap variation of the starting material. However, our data are consistent with small active units containing only a few Si atoms that are responsible for the light emission. Such units are present in many compounds proposed in the literature as the cause of the visible PL in porous Si.

Ksendzov, A.↗
NASA NTRS1995

Strain Effects on the Structural and Magnetic Properties of La- Ca-Mn-O Epitaxial Films

La0.7Ca0.3MnO3 (a = 3.86 angstroms) epitaxial thin films have been grown on SrTiO3 (a = 3.905 angstroms), LaAlO3 (a = 3.79 angstroms), and YAlO3 (a/square root of 2 = 3.66 angstroms, b/square root of 2 = 3.77 angstroms) substrates. The films were analyzed with x-ray diffraction, x-ray photoemission spectroscopy, dc and ac resistivity, and dc magnetization.

epitaxial films lanthanum↗
NASA NTRSDate not supplied

Low Temperature Formation of Carbonaceous Grains from Hydrocarbons and PAHs with the COSmIC Facility

Complex carbon molecules and ions are ubiquitous in space and form the building blocks of the carbonaceous components of cosmic dust grains, ultimately contributing to the formation of planets. We report experimental investigations of the low temperature chemical pathways leading to the formation of cosmic grain analogs from gas phase molecular precursors to better understand the evolution of cosmic carbon. The study of the formation of dust is essential to understand and to quantify the budget of extraterrestrial organic molecules. Although dust plays an important role in the evolution of interstellar chemistry and in the formation of organic molecules, little is known on the formation and destruction processes of carbonaceous dust. The experiments were performed using the Cosmic Simulation Chamber (COSmIC) to generate and characterize solid grains formed from gas phase precursors under controlled conditions representative of astrophysical environments [1]. Using COSmIC, it is possible to investigate the evolution of cosmic carbon from the formation of neutral and ionized hydrocarbons and PAHs in the gas phase [2], to solid carbon grains [3, 4, 5]. This is achieved by using a pulsed slit discharge nozzle to produce an adiabatic jet expansion and cool down Ar-hydrocarbon and PAH gas mixtures to astrophysically relevant temperature before inducing chemistry by generating a plasma discharge in the stream of the expansion. This plasma induced chemistry results in the formation of complex molecules and solid particles, analogs of cosmic grains in situ in the plasma expansion (i.e., without wall effects) that are carried by the accelerated gas in the expansion, and collected on substrates placed a few centimeters downstream of the electrodes. The results of a preliminary solid phase ex-situ analysis of cosmic grain analogs produced from a series of gas mixtures including hydrocarbons such as CH4 and C2H2 [3] and PAHs [4, 5] found in circumstellar ejecta of late C stars will be discussed. SEM imaging was used to provide insight on the impact of the precursors on the morphology and growth structure of the grains produced [3]. Laser desorption mass spectrometry was used to identify the molecules making up the main structures within the condensed grains [4] while X-ray irradiation and X-ray photoemission spectroscopy were used to investigate the impact the impact of stellar X-rays on cosmic dust.

Carbonaceous Grains↗
NASA NTRS2009

Stardust Interstellar Preliminary Examination (ISPE)

In January 2006 the Stardust sample return capsule returned to Earth bearing the first solid samples from a primitive solar system body, C omet 81P/Wild2, and a collector dedicated to the capture and return o f contemporary interstellar dust. Both collectors were approximately 0.1m(exp 2) in area and were composed of aerogel tiles (85% of the co llecting area) and aluminum foils. The Stardust Interstellar Dust Col lector (SIDC) was exposed to the interstellar dust stream for a total exposure factor of 20 m(exp 2-) day during two periods before the co metary encounter. The Stardust Interstellar Preliminary Examination ( ISPE) is a three-year effort to characterize the collection using no ndestructive techniques. The ISPE consists of six interdependent proj ects: (1) Candidate identification through automated digital microsco py and a massively distributed, calibrated search (2) Candidate extr action and photodocumentation (3) Characterization of candidates thro ugh synchrotronbased FourierTranform Infrared Spectroscopy (FTIR), S canning XRay Fluoresence Microscopy (SXRF), and Scanning Transmission Xray Microscopy (STXM) (4) Search for and analysis of craters in f oils through FESEM scanning, Auger Spectroscopy and synchrotronbased Photoemission Electron Microscopy (PEEM) (5) Modeling of interstell ar dust transport in the solar system (6) Laboratory simulations of h ypervelocity dust impacts into the collecting media

Westphal, A. J.↗
NASA NTRS1983

Optical detectors for spectroscopy

The modes of operation of photoconductive and photoemissive array detectors are described, and their performance characteristics compared and contrasted, with emphasis on their suitability for use as detectors for optical spectroscopy. The prospects for future developments of the array detectors are discussed.

Timothy, J. G.↗