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At least 37 records · Page 2

Data for "Gold-Induced Chemical Perturbations in CdTe-Based Photovoltaic Cells"

Back contacting p-type CdTe has been identified as one of the major areas of loss in CdTe photovoltaic (PV) power conversion efficiency (PCE). In research settings, Au is a common contact material due to its ease of use and decent performance. This work provides a detailed investigation into using gold for back contacting As-doped, CdCl2 treated, polycrystalline CdTe that has been exposed to air after absorber processing, another routine practice. First, X-ray photoemission spectroscopy (XPS) is used to determine the native oxide to be 1.6 nm of CdTeO3 using a combination of angle-resolved XPS and the cadmium modified Auger parameter. During gold metallization of CdTe, oxygen and oxidized tellurium are eliminated from the thin CdTeO3 native oxide. The fate of the released oxygen and possibly cadmium and tellurium are not known, but these reaction byproducts can enter the absorber bulk or grain boundaries, stay at the interface, or dissolve in the Au. Interfacial hole barriers between CdTe and Au are measured for samples with and without the native oxide present prior to metallization. Results show that the thin CdTeO3 alleviates the downward band bending by 40 meV from 470 meV to 430 meV even though it is consumed during interface formation. The implications of these chemical reactions on the device are assessed through photoluminescence (PL) spectroscopy which shows losses in internal open circuit voltage (iVoc) from 820 meV to 795 meV, carrier lifetime from 123 ns to 45 ns, and PL quantum yield from 2.9x10-5 to 1.2x10-5. Modeling time-resolved PL lifetimes demonstrates the back surface recombination velocity due to metallization reduces minority carrier lifetimes. These results identify the native oxide and show that it plays an important role in mediating downward band bending along with how the back interface reaction can negatively impact device-scale parameters and reduce PV PCE.

14 SOLAR ENERGY↗

Gold-Induced Chemical Perturbations in CdTe-Based Photovoltaic Cells

Back-contacting p-type CdTe has been identified as one of the major areas of loss in CdTe photovoltaic (PV) power conversion efficiency (PCE). In research settings, Au is a common contact material due to its ease of use and decent performance. This work provides a detailed investigation into using gold for back contacting As-doped, CdCl 2 -treated, polycrystalline CdTe that has been exposed to air after absorber processing, another routine practice. First, X-ray photoemission spectroscopy (XPS) is used to determine the native oxide to be 1.6 nm of CdTeO 3 by using a combination of angle-resolved XPS and the cadmium-modified Auger parameter. During gold metallization of CdTe, oxygen and oxidized tellurium are eliminated from the thin CdTeO 3 native oxide. The fates of the released oxygen and possibly cadmium and tellurium are not known, but these reaction byproducts can enter the absorber bulk or grain boundaries, stay at the interface, or dissolve in the Au. Interfacial hole barriers between CdTe and Au are measured for samples with and without the native oxide present prior to metallization. Results show that the thin CdTeO 3 alleviates the downward band bending by 40 meV from 470 to 430 meV even though it is consumed during interface formation. The implications of these chemical reactions on the device are assessed through photoluminescence (PL) spectroscopy, which shows losses in internal open circuit voltage (iVoc) from 820 to 795 meV, carrier lifetime from 123 to 45 ns, and PL quantum yield from 2.9 × 10 −5 to 1.2 × 10 −5 . Modeling timeresolved PL lifetimes demonstrates the back surface recombination velocity due to metallization reduces minority carrier lifetimes. These results identify the native oxide and show that it plays an important role in mediating downward band bending along with how the back interface reaction can negatively impact device-scale parameters and reduce PV PCE.

14 SOLAR ENERGY↗

Top-Performing Photovoltaic Cells Compared to the Shockley–Queisser Limit

Top-performing single-junction and two-terminal tandem devices that include at least one polycrystalline cell are compared with each other and their ideal limits. The parameters of open-circuit voltage, short-circuit current, and fill-factor are individually compared to the Shockley–Queisser limit to investigate where different technologies have room to improve. Technologies, such as silicon and cadmium telluride have the most room for improvement in open-circuit voltage currently utilizing 87% and 81% of their maxima, respectively. Detailed diode and fill-factor loss analysis is presented for single-junction devices to give further insight on how they compare and where efficiency is lost. Single-crystal technologies demonstrate a fill-factor closer to the Shockley–Queisser limit than polycrystalline devices. The high diode quality factor of polycrystalline devices is the leading cause of the decreased fill-factor. Similar analysis on tandem cells with at least one thin-film cell shows that although their efficiency exceeds that of the single-junction cells, the fraction of their ideal efficiency is smaller. Here, by comparing parameters to the Shockley–Queisser limit, it becomes clearer where certain technologies have the potential for improvement.

High efficiency↗

Top Stack Optimization for Cu 2 BaSn(S, Se) 4 Photovoltaic Cell Leads to Improved Device Power Conversion Efficiency beyond 6%

Earth-abundant and air-stable Cu 2 BaSnS 4-x Se x (CBTSSe) and related thin-film absorbers are regarded as prospective options to meet the increasing demand for low-cost solar cell deployment. Devices based on vacuum-deposited CBTSSe absorbers have achieved record power conversion efficiency (PCE) of 5.2 % based on a conventional device structure using CdS buffer and i-ZnO/ITO window layers, with open-circuit voltage (V OC ) posing the major bottleneck for improving solar cell performance. The current study demonstrates a >20 % improvement in V OC (from 0.62 V to 0.75 V) and corresponding enhancement in PCE (from 5.1 % to 6.2 % without anti-reflection coating; to 6.5 % with MgF 2 anti-reflection coating) for solution-deposited CBTSSe solar cells. This performance improvement is realized by introducing an alternative successive ionic layer adsorption and reaction (SILAR)-deposited Zn 1-x Cd x S buffer combined with sputtered Zn 1-x Mg x O/Al-doped ZnO window/top contact layer, which offer lower electron affinities relative to the conventional CdS/i-ZnO/ITO stack and better matching with the low electron affinity of CBTSSe. A combined experimental (temperature- and light intensity-dependent V OC measurements) and device simulation (SCAPS-1D) evaluation points to the importance of addressing relative band offsets for both the buffer and window layers relative to the absorber in mitigating interfacial recombination and optimizing CBTSSe solar cell performance.

25 ENERGY STORAGE↗

Laser‐Sintered Silver Metallization for Silicon Heterojunction Photovoltaic Cells

Herein, a novel metallization technique is reported for crystalline silicon heterojunction (SHJ) solar cells in which silver (Ag) fingers are printed on the SHJ substrates by dispensing Ag nanoparticle‐based inks through a needle and then sintered with a continuous‐wave carbon dioxide (CO 2 ) laser. The impact of the Ag ink viscosity on the line quality and the line resistance is investigated on three Ag inks with different viscosities. Increasing ink viscosity yields higher Ag contact heights, larger aspect ratios, and lower line resistance values. The Ag line height increases from less than a micrometer to ≈18.62 ± 3.48 μm with the increasing viscosity. Photoluminescence imaging shows that the low‐resistance Ag metal contacts obtained do not result in any passivation damage of the SHJ substrate. This is because the wavelength of light emitted from the CO 2 laser (i.e., 10.6 μm) leads to optical absorption in the Ag, but this light is effectively transparent to the transparent conductive oxide film, amorphous silicon films, and crystalline silicon substrate. Bulk resistivity values as low as 6.5 μΩ cm are obtained for the laser‐sintered Ag contact and printed using the Ag ink with the highest viscosity in this work.

Mousumi, Jannatul Ferdous↗

Mechanically stacked tandem photovoltaic cells with intermediate optical filters

A method of fabricating a multi-junction photosensitive device is provided. The method may include fabricating at least two photoactive layers, wherein at least one photoactive layer is fabricated on a transparent substrate, and at least one photoactive layer is fabricated on a reflective substrate, patterning at least one optical filter layer on at least one photoactive layer fabricated on a transparent substrate, and bonding the at least two photoactive layers using cold weld or van der Waals bonding. A multi-junction photosensitive device is also provided. The device may have at least two photoactive layers, and at least one optical filter layer, wherein at least two layers are bonded using cold weld or van der Waals bonding. The optical filter layer may be a Distributed Bragg Reflector.

Forrest, Stephen R.↗

Solar fuel generator including a catalytic mesh

This disclosure provides systems, methods, and apparatus related to a solar fuel generator. In one aspect, a device includes a photovoltaic cell, the photovoltaic cell having a first surface and a second surface, a mesh disposed on the first surface of the photovoltaic cell, and a polymer disposed on the mesh and on the first surface of the photovoltaic cell. The mesh has a catalyst disposed thereon. The polymer covers the first surface of the photovoltaic cell, with at least a portion of the mesh not being covered with the polymer.

Walczak, Karl A.↗

Moldable photovoltaic solar cell module

A moldable photovoltaic module is provided. The module includes a flexible polymeric flex-circuit substrate having an electrically conductive printed wiring pattern and solder pads defined on it. Small photovoltaic cells are affixed to the flex-circuit substrate by back-surface contacts in electrical contact with the solder pads. At least one thermoformable polymeric film is joined to the flex-circuit substrate. Each said solder pad comprises a solder composition that, after an initial melt, has a melting point that lies above at least a portion of the temperature range for thermoforming the polymeric film.

14 SOLAR ENERGY↗

Photochemical Decomposition of Y‐Series Non‐Fullerene Acceptors Is Responsible for Degradation of High‐Efficiency Organic Solar Cells

Abstract Organic photovoltaic cells that employ Y‐series non‐fullerene acceptors (NFAs) have recently achieved impressive power‐conversion efficiencies (>18%). To fulfill their commercial promise, it is important to quantify their operational lifetimes and understand their degradation mechanisms. In this work, the spectral‐dependent photostability of films and solar cells comprising several Y‐series acceptors and the donor polymer PM6 is investigated systematically. By applying longpass filters during aging, it is shown that UV/near‐UV photons are responsible for the photochemical decomposition of Y‐series acceptors; this degradation is the primary driver of early solar cell performance losses. Using mass spectrometry, the vinylene linkage between the core and electron‐accepting moieties of Y‐series acceptors is identified as the weak point susceptible to cleavage under UV‐illumination. Employing a series of device characterization, along with numerical simulations, the efficiency losses in organic photovoltaic cells are attributed to the formation of traps, which reduces charge extraction efficiency and facilitates non‐radiative recombination as the Y‐series acceptors degrade. This study provides new insights for molecular degradation of organic photovoltaic absorber materials and highlights the importance of future molecular design and strategies for improved solar cell stability.

14 SOLAR ENERGY↗

Operando nuclear magnetic resonance rotor insert

A magic angle sample spinning nuclear magnetic resonance system including a housing, a cryogenic fluid in the housing, a magnet in the housing, a probe in the housing, a magic angle sample spinning insert in the probe, a sample battery in the magic angle sample spinning insert, a photovoltaic cell in the magic angle sample spinning insert wherein the photovoltaic cell is connected to the sample battery, an optic fiber operatively connected to the photovoltaic cell, and a laser operatively connected to the optic fiber wherein the laser provides power to charge the sample battery during the magic angle sample spinning nuclear magnetic resonance.

Marple, Maxwell↗

Wavelength-selective specularly reflecting photovoltaic module and manufacture thereof

A photovoltaic module comprises a plurality of photovoltaic cells, and a polymeric film positioned on an incident light side of the plurality of photovoltaic cells, wherein the polymeric film transmits a range of wavelengths of the incident light spectrum and specularly reflects wavelengths outside of the range. An encapsulant layer is in contact with the polymeric film. The polymeric film may have a first surface area larger than a second surface area of the layer of photovoltaic cells. The polymeric film may have one or more through-holes so that encapsulant can penetrate through the through-holes at elevated temperature during lamination thereby bonding to a front glass of the photovoltaic module.

14 SOLAR ENERGY↗

Vapor phase photo-electrochemical cell

This disclosure provides systems, methods, and apparatus related to a vapor phase photo-electrochemical cell. In one aspect, a device includes a photovoltaic cell, a cathode disposed on the photovoltaic cell, an ionomer membrane disposed on the cathode, and an anode disposed on the ionomer membrane. The cathode includes a cathode catalyst. The ionomer membrane is in contact with the cathode catalyst. The anode includes an anode catalyst. The anode catalyst is in contact with the ionomer membrane. The anode, the ionomer membrane, and the cathode are transmissive to the solar radiation spectrum.

Larson, David M.↗