Three-dimensional measurements of plasma parameters in an inductively coupled plasma processing chamber
Inductively coupled plasmas (ICPs) are extensively used for materials processing and microelectronics fabrication. However, their electromagnetic properties have not been fully characterized. In this regard, we have performed fully three dimensional (3D), time dependent measurements of the magnetic field, electron density, and electron temperature for an ICP sustained in argon in an industrial reactor designed for plasma etching in microelectronics fabrication. These measurements were compared to modeling results. The plasma was generated using pulsed power delivered at 2 MHz by a planar coil. The magnetic field was measured using a three axis magnetic probe at 15 366 locations throughout the plasma volume during the H-mode portion of the pulse at temporal intervals of 2 ns. A swept Langmuir probe was used to measure plasma parameters at the same locations. The plasma density measurement was calibrated with line-integrated densities obtained using a 96 GHz interferometer. During a single radio frequency (RF) cycle, the 3D current density [derived from B(r→,t)]is initially maximum just below the coil and moves downward toward the center of the chamber. Isosurfaces of current are nearly symmetric toroids. The total electric field, space charge field, and inductive electric field were derived and used to calculate the dissipated power, plasma current, and Poynting flux. Computer modeling of the experiment reproduces the phase dependent behavior. Animations showing the time dependent 3D measurements are presented in the supplementary material.