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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS2006

Waveguide Power-Amplifier Module for 80 to 150 GHz

A waveguide power-amplifier module capable of operating over the frequency range from 80 to 150 GHz has been constructed. The module comprises a previously reported power amplifier packaged in a waveguide housing that is compatible with WR-8 waveguides. (WR- 8 is a standard waveguide size for the nominal frequency range from 90 to 140 GHz.) The waveguide power-amplifier module is robust and can be bolted to test equipment and to other electronic circuits with which the amplifier must be connected for normal operation.

Samoska, Lorene↗
NASA NTRS1968

New microelectronic power amplifier

Integrated push-pull power amplifier fabricated on a chip of silicon has interdigitated power transistors and is hermetically encapsulated in a beryllia flat package. It provides current output greater than the nominal 10 amperes from an input current drive of 1 ampere.

New, T. C.↗
NASA NTRSDate not supplied

Ka-Band GaN-on-SiC MMIC Balanced High Power Amplifier for NASA's Lunar Missions

The feasibility of Ka-band GaN-on-SiC MMIC based balanced power amplifier for science data downlinks from NASA’s lunar mission assets in space is investigated. The balanced amplifier combines the RF output power from two power amplifiers using a rectangular waveguide based 3-dB hybrid coupler. The investigation includes characterizing the balanced amplifier for the overall RF output power, Gain, power added efficiency, RMS error vector magnitude for offset-QPSK, 8PSK, 16APSK, and 32APSK waveforms, 3rd order intermodulation products, and noise figure. The balanced amplifier has high output RF power and good linearity and can support high data rate downlinks from the surface and vicinity of the Moon to Earth.

Gallium Nitride↗
NASA NTRS1993

1047 nm laser diode master oscillator Nd:YLF power amplifier laser system

A master oscillator power amplifier (MOPA) laser transmitter system at 1047 nm wavelength using a semiconductor laser diode and a diode pumped solid state (Nd:YLF) laser (DPSSL) amplifier is described. A small signal gain of 23 dB, a near diffraction limited beam, 1 Gbit/s modulation rates and greater than 0.6 W average power are achieved. This MOPA laser has the advantage of amplifying the modulation signal from the laser diode master oscillator (MO) with no signal degradation.

Yu, A. W.↗
NASA NTRS2024

Spectrally Efficient GaN High-Power Amplifier for Lunar Communications

The paper demonstrates a spectrally efficient Ka-band GaN MMIC based high-power amplifier (HPA) that uses a waveguide 4-port magic-tee as a 2-way power combiner to combine the output from two lower power amplifier circuits. The paper presents for the prototype HPA the measured output power, gain, power added efficiency, error vector magnitude for Offset-QPSK, 8PSK, 16APSK, 32APSK, and 16QAM waveforms, waveform spectrum, and out-of-band spectral regrowth. The HPA is intended for establishing a direct communication link between assets on the lunar surface/orbit and Earth.

Gallium nitride↗
NASA NTRS1972

Discrete component S-band power amplifier

A spacecraft S-band power amplifier for Nimbus satellite is reported that achieves stability by use of moderate Q input and output circuits. The discrete component amplifier uses distributed inductance and small piston capacitors for resonance and impedance matching of the transistor to 50 ohm input and output.

Block, A. F.↗
NASA NTRSDate not supplied

Demonstration of a Switched Wideband GaN High-Power Amplifier for Future Space Missions

In this paper, we present the architecture of a Ka-band switched, wideband, high efficiency gallium nitride based high-power amplifier. The architecture is validated by characterizing the driver and power amplifier chain. The measured results include Pout, Gain, PAE, RMS EVM for QPSK, Offset-QPSK, 8PSK, 16APSK, and 16QAM constellations, 3rd order IMD products, and noise figure. The wide bandwidth and high output power of the amplifier will enable future user terminals to interoperate between multiple service provider’s space networks.

high power amplifier↗
NASA NTRSDate not supplied

Demonstration of a Switched Wideband GaN High-Power Amplifier for Future Space Missions

In this paper, we present the architecture of a Ka-band switched, wideband, high efficiency gallium nitride based high-power amplifier. The architecture is validated by characterizing the driver and power amplifier chain. The measured results include Pout, Gain, PAE, RMS EVM for QPSK, Offset-QPSK, 8PSK, 16APSK, and 16QAM constellations, 3rd order IMD products, noise figure, and added phase noise. The wide bandwidth and high output power of the amplifier will enable future user terminals to interoperate between multiple service provider’s space networks.

High power amplifier↗
NASA NTRS1992

Modulation characteristics of a high-power semiconductor Master Oscillator Power Amplifier (MOPA)

A semiconductor master oscillator-power amplifier was demonstrated using an anti-reflection (AR) coated broad area laser as the amplifier. Under CW operation, diffraction-limited single-longitudinal-mode powers up to 340 mW were demonstrated. The characteristics of the far-field pattern were measured and compared to a two-dimensional reflective Fabry-Perot amplifier model of the device. The MOPA configuration was modulated by the master oscillator. Prior to injection into the amplifier, the amplitude and frequency modulation properties of the master oscillator were characterized. The frequency response of the MOPA configuration was characterized for an AM/FM modulated injection beam, and was found to be a function of the frequency detuning between the master oscillator and the resonant amplifier. A shift in the phase was also observed as a function of frequency detuning; this phase shift is attributed to the optical phase shift imparted to a wave reflected from a Fabry-Perot cavity. Square-wave optical pulses were generated at 10 MHz and 250 MHz with diffraction-limited peak powers of 200 mW and 250 mW. The peak power for a given modulation frequency is found to be limited by the injected power and the FM modulation at that frequency. The modulation results make the MOPA attractive for use as a transmitter source in applications such as free-space communications and ranging/altimetry.

Cornwell, Donald Mitchell, Jr.↗
NASA NTRS2022

Demonstration of a Switched Wideband GaN High-Power Amplifier for Future Space Missions

In this paper, we present the architecture of a Ka-band switched, wideband, high efficiency gallium nitride based high-power amplifier. The architecture is validated by characterizing the driver and power amplifier chain. The measured results include Pout, Gain, PAE, RMS EVM for QPSK, Offset-QPSK, 8PSK, 16APSK, and 16QAM constellations, 3rd order IMD products, noise figure, and added phase noise. The wide bandwidth and high output power of the amplifier will enable future user terminals to interoperate between multiple service provider’s space networks.

Rainee N. Simons↗
NASA NTRS1994

Monolithic Three-Stage 32-GHz Power Amplifier

Monolithic three-stage 32-GHz power amplifier compact and offers state-of-the-art performance. Operates at frequencies around 32 GHz. Designed for use aboard communication satellite and is also suitable for terrestrial applications in which moderate power and high efficiency needed.

Saunier, Paul↗
NASA NTRS1980

Push-pull switching power amplifier

A true push-pull switching power amplifier is disclosed utilizing two dc-to-dc converters. Each converter is comprised of two inductances, one inductance in series with a DC source and the other inductor in series with the output load, and an electrical energy transferring device with storage capability, namely storage capacitance, with suitable switching means between the inductances to obtain DC level conversion, where the switching means allows bidirectional current (and power) flow, and the switching means of one dc-to-dc converter is driven by the complement of a square-wave switching signal for the other dc-to-dc converter for true push-pull operation. For reduction of current ripple, the inductances in each of the two converters may be coupled, and with proper design of the coupling, the ripple can be reduced to zero at either the input or the output, but preferably the output.

Cuk, Slobodan M.↗
NASA NTRS1984

The 20 GHz GaAs monolithic power amplifier module development

The development of a 20 GHz GaAs FET monlithic power amplifier module for advanced communication applications is described. Four-way power combing of four 0.6 W amplifier modules is used as the baseline approach. For this purpose, a monolithic four-way traveling-wave power divider/combiner was developed. Over a 20 GHz bandwidth (10 to 30 GHz), an insertion loss of no more than 1.2 dB was measured for a pair of back-to-back connected divider/combiners. Isolation between output ports is better than 20 dB, and VSWRs are better than 21:1. A distributed amplifier with six 300 micron gate width FETs and gate and drain transmission line tapers has been designed, fabricated, and evaluated for use as an 0.6 W module. This amplifier has achieved state-of-the-art results of 0.5 W output power with at least 4 dB gain across the entire 2 to 21 GHz frequency range. An output power of 2 W was achieved at a measurement frequency of 18 GHz when four distributed amplifiers were power-combined using a pair of traveling-wave divider/combiners. Another approach is the direct common-source cascading of three power FET stages. An output power of up to 2W with 12 dB gain and 20% power-added efficiency has been achieved with this approach (at 17 GHz). The linear gain was 14 dB at 1 W output. The first two stages of the three-stage amplifier have achieved an output power of 1.6 W with 9 dB gain and 26% power-added efficiency at 16 GHz.

Source record↗