Search NASA⌕ Search

SEARCH · Search NASA

Results for “QWIP”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 37 records · Page 2

Low Frequency 1/f Noise on QWIPs, nBn, and Superlattice Focal Plane Array

Noise Equivalent Difference Temperature (NE△T) is a standard performance metric for most infrared focal plane array (FPA) systems. The frequency bandwidth and range associated with NE△T is at high frequency and it does not describe the long time noise behavior or the very low frequency noise of the FPA. Very low frequency noise measurement requires data capture that takes longer time duration and sampling interval. This study investigates low frequency noise in QWIP, nBn and LWIR n-type Complementary Barrier Infrared Detector (CBIRD) FPAs. The corner frequencies are extracted from the power spectral density (PSD) as function of frequency. The peak wavelength, quantum efficiency of QWIP detector are 6.2 µm and 2 %, respectively. QWIP FPA has a mean NE△T ~ 25 mK at an operating temperature of 65 K and an integration time of 16 msec. The mean QWIP PSD plot shows a corner frequency of < 0.5 mHz. The nBn FPA with 4 µm cut off and quantum efficiency of 67 % has NE△T ~ 15.6 mK at an integration time ~ 7.52 msec and an operating temperature of 120 K. The nBn has corner frequency of > 50 mHz. Lastly the n-type CBIRD FPA with a 50% cutoff at 8.8 µm and quantum efficiency of ~ 50 % has an NE△T ~ 18.6 mK at an integration time of 1.86 msec and operating temperature 120 K. The superlattice FPA has a corner frequency ~ 10 mHz. The investigation of the tail on the NE△T histogram reveals that its origin is not accounted for entirely by the high noise current, but also it needs the inclusion of lower responsivity for some pixels.

Pepper, B.↗

8-9 and 14-15 Micron Two-Color 640x486 GaAs/AlGaAs Quantum Well Infrared Photodetector (QWIP) Focal Plane Array Camera

An optimized long-wavelength two-color Quantum Well Infrared Photodetector (QWIP) device structure has been designed. This device structure was grown on a three inch semi-insulating GaAs substrate by molecular beam epitaxy (MBE). This wafer was processed into several 640x486 format monolithically integrated 8-9 and 14-15 micron two color (or dual wavelength) QWIP focal plane arrays (FPAs). These FPAs were then hybridized to 640x486 silicon CMOS readout multiplexers. A thinned (i.e., substrate removed) FPA hybrid was integrated into a liquid helium cooled dewar to perform electrical and optical characterization and to demonstrate simultaneous two-color imagery. The 8-9 micron detectors in the FPA have shown background limited performance (BLIP) at 70 K operating temperature, at 300 K background with f/2 cold stop. The 14-15 micron detectors of the FPA have reached BLIP at 40 K operating temperature at the same background conditions. In this presentation we discuss the performance of this long-wavelength dualband QWIP FPA in quantum efficiency, detectivity, noise equivalent temperature difference (NEAT), uniformity, and operability.

Gunapala, S. D.↗

Development of a 1K x 1K GaAs QWIP Far IR Imaging Array

In the on-going evolution of GaAs Quantum Well Infrared Photodetectors (QWIPs) we have developed a 1,024 x 1,024 (1K x1K), 8.4-9 microns infrared focal plane array (FPA). This 1 megapixel detector array is a hybrid using the Rockwell TCM 8050 silicon readout integrated circuit (ROIC) bump bonded to a GaAs QWIP array fabricated jointly by engineers at the Goddard Space Flight Center (GSFC) and the Army Research Laboratory (ARL). The finished hybrid is thinned at the Jet Propulsion Lab. Prior to this development the largest format array was a 512 x 640 FPA. We have integrated the 1K x 1K array into an imaging camera system and performed tests over the 40K-90K temperature range achieving BLIP performance at an operating temperature of 76K (f/2 camera system). The GaAs array is relatively easy to fabricate once the superlattice structure of the quantum wells has been defined and grown. The overall arrays costs are currently dominated by the costs associated with the silicon readout since the GaAs array fabrication is based on high yield, well-established GaAs processing capabilities. In this paper we will present the first results of our 1K x 1K QWIP array development including fabrication methodology, test data and our imaging results.

Jhabvala, M.↗

Plasmonic Antenna Coupling for QWIPs

In a proposed scheme for coupling light into a quantum-well infrared photodetector (QWIP), an antenna or an array of antennas made of a suitable metal would be fabricated on the face of what would otherwise be a standard QWIP. This or any such coupling scheme is required to effect polarization conversion: Light incident perpendicularly to the face is necessarily polarized in the plane of the face, whereas, as a matter of fundamental electrodynamics and related quantum selection rules, light must have a non-zero component of perpendicular polarization in order to be absorbed in the photodetection process. In a prior coupling scheme, gratings in the form of surface corrugations diffract normally gles, thereby imparting some perpendicular polarization. Unfortunately, the corrugation- fabrication process increases the overall nonuniformity of a large QWIP array. The proposed scheme is an alternative to the use of surface corrugations.

Hong, John↗

GaAs QWIP Array Containing More Than a Million Pixels

A 1,024 x 1,024-pixel array of quantum-well infrared photodetectors (QWIPs) has been built on a 1.8 x 1.8- cm GaAs chip. In tests, the array was found to perform well in detecting images at wavelengths from 8 to 9 m in operation at temperatures between 60 and 70 K. The largest-format QWIP prior array that performed successfully in tests contained 512 x 640 pixels. There is continuing development effort directed toward satisfying actual and anticipated demands to increase numbers of pixels and pixel sizes in order to increase the imaging resolution of infrared photodetector arrays. A 1,024 x 1,024-pixel and even larger formats have been achieved in the InSb and HgCdTe material systems, but photodetector arrays in these material systems are very expensive and manufactured by fewer than half a dozen large companies. In contrast, GaAs-photodetector-array technology is very mature, and photodetectors in the GaAs material system can be readily manufactured by a wide range of industrial technologists, by universities, and government laboratories. There is much similarity between processing in the GaAs industry and processing in the pervasive silicon industry. With respect to yield and cost, the performance of GaAs technology substantially exceeds that of InSb and HgCdTe technologies. In addition, GaAs detectors can be designed to respond to any portion of the wavelength range from 3 to about 16 micrometers - a feature that is very desirable for infrared imaging. GaAs QWIP arrays, like the present one, have potential for use as imaging sensors in infrared measuring instruments, infrared medical imaging systems, and infrared cameras.

Jhabvala, Murzy↗

Development of a 2K x 2K GaAs QWIP Focal Plane Array

We are developing the next generation of GaAs Quantum Well Infrared Photodetector (QWIP) focal plane arrays (FPAs) in preparation for future NASA space-borne Earth observing missions. It is anticipated that these missions will require both wider ground spatial coverage as well as higher ground imaging resolution. In order to demonstrate our capability in meeting these future goals we have taken a two-tiered approach in the next stage of advanced QWIP focal plane array development. We will describe our progress in the development of a 512 x 3,200 (512 x 3K) array format for this next generation thermal imaging array for the NASA Landsat project. However, there currently is no existing readout integrated circuit (ROIC) for this format array.so to demonstrate the ability to scale-up an existing ROIC we developed a 1,920 x 2,048 (2K x 2K) array and it hybridized to a Raytheon SB419 CTIA readout integrated circuit that was scaled up from their existing 512 x 640 SB339 ROIC. Two versions of the 512 x 3K QWIP array were fabricated to accommodate a future design scale-up of both the Indigo 9803 ROIC based on a 25 micron pixel dimension and a scale up of the Indigo 9705 ROIC based on a 30 micron pixel dimension. Neither readout for the 512 x 3K has yet to be developed but we have fabricated both versions of the array. We describe the design, development and test results of this effort as well as the specific applications these FPAs are intended to address.

Jhabvala, M.↗

Mid-Wave and Long-Wave Infrared Dualband Megapixel QWIP Focal Plane Array

Mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) 1024x1024 pixel InGaAs/GaAs/AlGaAs based quantum well infrared photodetector (QWIP) focal planes and a 320x256 pixel dual-band pixel co-registered simultaneous QWIP focal plane array have been demonstrated as pathfinders. In this paper, we discuss the development of 1024x1024 MWIR/LWIR dual-band pixel co-registered simultaneous QWIP focal plane array.

Gunapala, S. D.↗

Large format long-wavelength infrared narrow-band, multi-band, and broad-band QWIP focal plane arrays

A 640x512 pixel, long-wavelength cutoff, narrow-band quantum well infrared photodetector focal pllay array, a four-band QWIP FPA in 4-16 um spectral region, and a broad-band QWIP FPA having 15.4 mum cutoff have been demonstrated. In this paper we discuss the detector designs, dark currents, quantum efficiencies, responsivities, detectivities, noise equivalent differential temperatures, the effect of FPA nonuniformity on performance, and the operabilities of these QWIP FPAs.

Mumolo, J. M.↗

640 X 512 pixel long-wavelength infrared narrowband, multiband, and broadband QWIP focal plane arrays

A 640 512 pixel, long-wavelength cutoff, narrowband(delta lambda/lambda ~ 10%) quantum-well infrared photodetector(QWIP) focal plane array (FPA), a four-band QWIP FPA in the 4??m spectral region, and a broadband (delta lambda/lambda ~ 42%)QWIP FPA having a 15.4 m cutoff have been demonstrated. In this paper, we discuss the electrical and optical characterization of these FPAs, and their performance. In addition, we discuss the development of a very sensitive (NEDT ~ 10.6 mK) 640 X 512 pixel thermal imaging camera having a 9 lambda m cutoff.

broadband↗

Sharp Infrared Eyes The Journey of QWIPs from Concept to Large Inexpensive Sensitive Arrays in Hand-held Infrared Cameras

One of the simplest device realizations of the classic particle-in-a-box problem of basic quantum mechanics is the Quantum Well Infrared Photodetector (QWIP). Optimization of the detector design and material growth and processing has culminated in the realization of a camera with a large (256x256 pixel) focal plane array of QWIPs which can see at 8.5 mu m, holding forth great promise for a variety of applications in the 6-25 mu m wavelength range.

Quantum Well Infrared Photodetector QWIP quantum m↗

Quantum Well Infrared Photodetector (QWIP) Focal Planes for Long Wave Imaging

In this paper, we discuss the development of very sensitive long wavelength infrared GaAs/AlxGa1-xAs quantum well infrared photodetectors (QWIPs) based on bound-to-quasibound intersubband transition, fabrication of light coupling schemes for efficient light coupling, and demonstration of several long wavelength infrared cameras based on QWIP focal plane arrays.

long wavelength infrared quantum well infrared pho↗

Long-wavelength 256x256 QWIP Hand-held Camera

In this paper, we discuss the development of very sensitive long wavelength infrared (LWIR) GaAs/AlxGa1-xAs quantum well infrared photodetectors (QWIPs), fabrication of random reflectors for efficient light coupling, and the demonstration of first hand-held long-wavelength 256x256 QWIP focal plane array camera. Excellent imagery, with a noise equivalent differential temperature of 25 mK has been achieved.

long↗

Quantum Well Infrared Photodetectors (QWIP)

There has been a lot of interest in III-V long wavelength detectors in the lambda = 8 to 12 micron spectral range as alternatives to HgCdTe. Recently high performance quantum well infrared photodetectors (QWIP) have been demonstrated. They have a responsivity of R = 1.2 A/W, and a detectivity D(exp asterisk) sub lambda = 2 times 10(exp 10) cm Hz(exp 1/2)/W at 68 K for a QWIP with a cutoff wavelength of lambda sub c = 10.7 micron and a R = 1.0 A/W, and D(exp asterisk) sub lambda = 2 times 10(exp 10) cm Hz(exp 1/2)/W at T = 77 K for lambda sub c = 8.4 micron. These detectors consist of 50 periods of molecular beam epitaxy (MBE) grown layers doped n = 1 times 10(exp 18)cm(exp -3) having GaAs quantum well widths of 40 A and barrier widths of 500 A of Al sub x Ga sub 1-x As. Due to the well-established GaAs growth and processing techniques, these detectors have the potential for large, highly uniform, low cost, high performance arrays as well as monolithic integration with GaAs electronics, high speed and radiation hardness. Latest results on the transport physics, device performance and arrays are discussed.

Levine, B. F.↗

Long-Wavelength 256 x 256 QWIP Hand-Held Camera

In this paper, we discuss the development of very sensitive long wavelength infrared (LWIR) GaAs/Al(x)Ga(l-x)As quantum well infrared photodetectors (QWIPs), fabrication of random reflectors for efficient light coupling, and the demonstration of the first hand-held long-wavelength 256 x 256 QWIP focal plane array camera. Excellent imagery, with a noise equivalent differential temperature (NE Delta T) of 25 mK has been achieved.

Gunapala, S. D.↗

1024 x 1024 pixel mid-wavelength and long-wavelength infrared QWIP focal plane arrays for imaging applications

Mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) 10(24) x 10(24) pixel quantum well infrared photodetector (QWIP) focal planes have been demonstrated with excellent imaging performance. The MWIR QWIP detector array has demonstrated a noise equivalent differential temperature (NEAT) of 17 mK at a 95 K operating temperature with f/2.5 optics at 300 K background and the LWIR detector array has demonstrated a NEAT of 13 mK at a 70 K operating temperature with the same optical and background conditions as the MWIR detector array after the subtraction of system noise. Both MWIR and LWIR focal planes have shown background limited performance (BLIP) at 90 K and 70 K operating temperatures respectively, with similar optical and background conditions. In this paper, we will discuss the performance in terms of quantum efficiency, NE(delta)T, uniformity, operability and modulation transfer functions.

uniformity↗

Dual Common Planes for Time Multiplexing of Dual-Color QWIPs

A proposed improved method of externally controlled time multiplexing of the readouts of focal-plane arrays of pairs of stacked quantum-well infrared photodetectors (QWIPs) that operate in different wavelength bands is based on a dual-detector-common-plane circuit configuration. The method would be implemented in a QWIP integrated-circuit chip hybridized with a readout integrated-circuit (ROIC) chip.

Rafol, Sir B.↗