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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Topological flat bands in a family of multilayer graphene moiré lattices

Moiré materials host a wealth of intertwined correlated and topological states of matter, all arising from flat electronic bands with nontrivial quantum geometry. A prominent example is the family of alternating-twist magic-angle graphene stacks, which exhibit symmetry-broken states at rational fillings of the moiré band and superconductivity close to half filling. Here, we introduce a second family of twisted graphene multilayers made up of twisted sheets of M- and N-layer Bernal-stacked graphene flakes. Calculations indicate that applying an electric displacement field isolates a flat and topological moiré conduction band that is primarily localized to a single graphene sheet below the moiré interface. Phenomenologically, the result is a striking similarity in the hierarchies of symmetry-broken phases across this family of twisted graphene multilayers. Our results show that this family of structures offers promising new opportunities for the discovery of exotic new correlated and topological phenomena, enabled by using the layer number to fine tune the flat moiré band and its screening environment.

Electronic properties and materials↗
DOE OSTI2025

Robust supermoiré pattern in large-angle single-twist bilayers

Forming long-wavelength moiré superlattices in van der Waals bilayers that have a small-angle twist between the two layers has been a key approach for creating moiré flat bands. However, for small twist angles, strong lattice reconstruction creates domain walls and other forms of disorder in the moiré pattern, posing considerable challenges for engineering such platforms. At large twist angles, the lattices are more rigid, but it is difficult to produce flat bands in shorter-wavelength moiré superlattices. Here, in this study, we introduce an approach for tailoring robust supermoiré structures in bilayers of transition-metal dichalcogenides using only a single twist near a commensurate angle. Structurally, we show the spontaneous formation of a periodic arrangement of three inequivalent commensurate moiré stackings, where the angle deviation from the commensurate angle determines the periodicity. Electronically, we reveal a large set of van Hove singularities that indicate strong band hybridization, leading to flat bands near the valence band maximum. Our study extends the study of the interplay among band topology, quantum geometry and moiré superconductivity to the large twist angle regime.

electronic properties and materials↗
DOE OSTI2025

Moiré-driven topological electronic crystals in twisted graphene

In a dilute two-dimensional electron gas, Coulomb interactions can stabilize the formation of a Wigner crystal. Although Wigner crystals are topologically trivial, it has been predicted that electrons in a partially filled band can break continuous translational symmetry and time-reversal symmetry spontaneously, resulting in a type of topological electron crystal known as an anomalous Hall crystal. Here we report signatures of a generalized version of the anomalous Hall crystal in twisted bilayer–trilayer graphene, whose formation is driven by the moiré potential. The crystal forms at a band filling of one electron per four moiré unit cells (ν = 1/4) and quadruples the unit-cell area, coinciding with an integer quantum anomalous Hall effect. The Chern number of the state is exceptionally tunable, and it can be switched reversibly between +1 and −1 by electric and magnetic fields. Several other topological electronic crystals arise in a modest magnetic field, originating from ν = 1/3, 1/2, 2/3 and 3/2. As a result, the quantum geometry of the interaction-modified bands is likely to be very different from that of the original parent band, which enables possible future discoveries of correlation-driven topological phenomena.

Electronic properties and materials↗
DOE OSTI2024

Semi-Dirac Fermions in a Topological Metal

Topological semimetals with massless Dirac and Weyl fermions represent the forefront of quantum materials research. In two dimensions, a peculiar class of fermions that are massless in one direction and massive in the perpendicular direction was predicted 16 years ago. These highly exotic quasiparticles—the semi-Dirac fermions—ignited intense theoretical and experimental interest but remain undetected. Using magneto-optical spectroscopy, we demonstrate the defining feature of semi-Dirac fermions— B 2 / 3 scaling of Landau levels—in a prototypical nodal-line metal ZrSiS. In topological metals, including ZrSiS, nodal lines extend the band degeneracies from isolated points to lines, loops, or even chains in the momentum space. With calculations and theoretical modeling, we pinpoint the observed semi-Dirac spectrum to the crossing points of nodal lines in ZrSiS. Crossing nodal lines exhibit a continuum absorption spectrum but with singularities that scale as B 2 / 3 at the crossing. Our work sheds light on the hidden quasiparticles emerging from the intricate topology of crossing nodal lines and highlights the potential to explore quantum geometry with linear optical responses. Published by the American Physical Society 2024

Shao, Yinming (ORCID:0000000228910028)↗
DOE OSTI2025

Topological Magneto-optics in the Noncoplanar Antiferromagnet Co 1/3 ⁢NbS 2 : Imaging and Writing Chiral Magnetic Domains

Despite its tiny net magnetization, the antiferromagnetic (AFM) van der Waals material Co 1/3 ⁢NbS 2 exhibits a large transverse Hall conductivity 𝜎 𝑥⁢𝑦 even at zero applied magnetic field, which arises, as recently shown, from the topological nature of its noncoplanar “tetrahedral” AFM order. Here, this triple-𝐪 magnetic order can be regarded as the short-length-scale limit of a magnetic skyrmion lattice and has an intrinsic spin chirality. Here, we show, using optical wavelengths spanning the ultraviolet to infrared (400–1000 nm), that magnetic circular dichroism provides an incisive optical probe of the topological AFM order in Co 1/3 ⁢NbS 2 . Measurements as a continuous function of photon energy are directly compared with first-principles calculations, revealing the influence of the underlying quantum geometry on optical conductivity. Leveraging the power and flexibility of optical methods, we use scanning magnetic circular dichroism microscopy to directly image chiral AFM domains and demonstrate writing of chiral AFM domains.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Dataset for Role of electron correlation on the adenine dimer interaction for non-equilibrium geometries: a benchmark Quantum Monte Carlo study

Datasets for the calculations reported in "Role of electron correlation on the adenine dimer interaction for non-equilibrium geometries: A benchmark Quantum Monte Carlo study" by L. Washburn, A. Sedova, P. R. C. Kent. J. Chem. Phys. (2026) 165 (5): 054118. https://doi.org/10.1063/5.0332651. Includes the molecular geometries, QMCPACK, PySCF, and ORCA inputs and outputs, analysis scripts and files needed to reproduce all the figures and tables.

59 BASIC BIOLOGICAL SCIENCES↗
NASA NTRS2003

Investigarion of the effects of a quantum dot crystal geometry on its brillouin spectrum

We develop a theoretical model and carry out simulation of Brillouin spectrum of three-dimensional (3D) quantum dot (QD) arrays with a high order of 3D periodicity, i.e. quantum dot crystals (QDC). The phonon spectrum of Ge/Si QDC is found from the numerical solution of the elasticity equation for the whole structure. The developed approach is valid for any QD shape and regimentation and allows to include disorder in consider at ion.

quantum dot arrays quantum dot crystal raman spect↗
DOE OSTI2026

Role of electron correlation on the adenine dimer interaction for non-equilibrium geometries: a benchmark Quantum Monte Carlo study

The accurate description of non-covalent interactions is critical for understanding the structure, dynamics, and eventual function of biomolecules. The adenine dimer serves as a benchmark system for computational methods due to its role in nucleic acid structures and its rich conformational landscape. In this study, we employ benchmark diffusion quantum Monte Carlo (DMC) methods to investigate the relative energies and role of electron correlation on a set of adenine dimer conformations generated via a search of the potential energy landscape using the global optimizer algorithm. Relative DMC energies are compared against a wide range of density functional theory (DFT) approximation results. We find that although most of the DFT functionals perform well for low-energy structures, their accuracy varies significantly for higher-energy conformations, including stacked and T-shaped structures. A large fraction of the variation is due to the treatment of the van der Waals interaction. BLYP, B3LYP, and PBE0 significantly improve with added D4 dispersion, while the recent r2SCAN-D4 and ωB97M-V functionals show the least scatter and closest agreement with the DMC. These findings highlight the delicate nature of these interactions in biomolecular systems and provide guidance for simulations of their structure and dynamics and for the development of machine learned interatomic potentials.

Washburn, Laurel [ORNL] (ORCID:0000000324179335)↗
DOE OSTI2025

Generalized geometric speed limits for quantum observables

Leveraging quantum information geometry, we derive generalized quantum speed limits on the rate of change of the expectation values of observables. These bounds subsume and, for Hilbert space dimension ≥3, tighten existing bounds—in some cases by an arbitrarily large multiplicative constant. Our theoretical results are supported by illustrative examples and an experimental demonstration using a superconducting qutrit. We also derive two upper bounds on the generalized quantum Fisher information in terms of the condition number of the density matrix. One of these bounds applies only to coherent dynamics and depends also on the variance of the Hamiltonian. The other bound depends also on the so-called Wigner-Yanase skew information. These bounds generalize well-known bounds on the symmetric logarithmic derivative quantum Fisher information and are tighter than the existing bounds for sufficiently mixed states (e.g., for sufficiently high temperature thermal states).

open quantum systems & decoherence↗
DOE OSTI2025

Computational Power of Random Quantum Circuits in Arbitrary Geometries

Empirical evidence for a gap between the computational powers of classical and quantum computers has been provided by experiments that sample the output distributions of two-dimensional quantum circuits. Many attempts to close this gap have utilized classical simulations based on tensor network techniques, and their limitations shed light on the improvements to quantum hardware required to frustrate classical simulability. In particular, quantum computers having in excess of approximately 50 qubits are primarily vulnerable to classical simulation due to restrictions on their gate fidelity and their connectivity, the latter determining how many gates are required (and, therefore, how much infidelity is suffered) in generating highly entangled states. Here, we describe recent hardware upgrades to Quantinuum’s H2 quantum computer, enabling it to operate on up to 56 qubits with arbitrary connectivity and 99.843(5)% two-qubit gate fidelity. We define a class of circuits with random geometries that become hard to classically simulate in very low depth and implement them utilizing the flexible connectivity of H2. A careful analysis demonstrating the fast saturation of classical simulation complexity with depth indicates that H2 can yield data well beyond the reach of state-of-the art classical simulation methods at unprecedented fidelities. We find that the considerable difficulty of classically simulating H2 is likely limited only by qubit number, demonstrating the promise and scalability of the quantum charge-coupled device architecture as continued progress is made toward building larger machines. Published by the American Physical Society 2025

DeCross, M.↗
DOE OSTI2025

Multistate Geometry of Shift Current and Polarization

The quantum metric and Berry curvature capture essential properties of nontrivial Bloch states and underpin many fascinating phenomena. However, it becomes increasingly evident that a more comprehensive understanding of quantum state geometry is necessary to explain properties involving Bloch states of multiple bands, such as optical transitions. To this end, we employ quantum state projectors to develop an explicitly gauge-invariant formalism and demonstrate its power with applications to nonlinear optics and the theory of electronic polarization. We provide a simple expression for the shift current that resolves its precise relation to the moments of electronic polarization, clarifies the treatment of band degeneracies, and reveals its decomposition into the sum of the skewness of the occupied states and intrinsically multistate geometry. The projector approach is applied to calculate nonlinear optical properties of transition metal dichalcogenides (TMDs) layers, using previously calculated minimal tight-binding models, and demonstrated analytically on a three-band generalization of the Rice-Mele chain to elucidate the different contributions. We close with comments on further applications of the projector operator approach to multistate geometry.

electric polarization↗
NASA NTRS2002

The Design of Fault Tolerant Quantum Dot Cellular Automata Based Logic

As transistor geometries are reduced, quantum effects begin to dominate device performance. At some point, transistors cease to have the properties that make them useful computational components. New computing elements must be developed in order to keep pace with Moore s Law. Quantum dot cellular automata (QCA) represent an alternative paradigm to transistor-based logic. QCA architectures that are robust to manufacturing tolerances and defects must be developed. We are developing software that allows the exploration of fault tolerant QCA gate architectures by automating the specification, simulation, analysis and documentation processes.

Armstrong, C. Duane↗
NASA NTRS1998

Simulation of Ultra-Small MOSFETs Using a 2-D Quantum-Corrected Drift-Diffusion Model

The continued down-scaling of electronic devices, in particular the commercially dominant MOSFET, will force a fundamental change in the process of new electronics technology development in the next five to ten years. The cost of developing new technology generations is soaring along with the price of new fabrication facilities, even as competitive pressure intensifies to bring this new technology to market faster than ever before. To reduce cost and time to market, device simulation must become a more fundamental, indeed dominant, part of the technology development cycle. In order to produce these benefits, simulation accuracy must improve markedly. At the same time, device physics will become more complex, with the rapid increase in various small-geometry and quantum effects. This work describes both an approach to device simulator development and a physical model which advance the effort to meet the tremendous electronic device simulation challenge described above. The device simulation approach is to specify the physical model at a high level to a general-purpose (but highly efficient) partial differential equation solver (in this case PROPHET, developed by Lucent Technologies), which then simulates the model in 1-D, 2-D, or 3-D for a specified device and test regime. This approach allows for the rapid investigation of a wide range of device models and effects, which is certainly essential for device simulation to catch up with, and then stay ahead of, electronic device technology of the present and future. The physical device model used in this work is the density-gradient (DG) quantum correction to the drift-diffusion model [Ancona, Phys. Rev. B 35(5), 7959 (1987)]. This model adds tunneling and quantum smoothing of carrier density profiles to the drift-diffusion model. We used the DG model in 1-D and 2-D (for the first time) to simulate both bipolar and unipolar devices. Simulations of heavily-doped, short-base diodes indicated that the DG quantum corrections do not have a large effect on the IN characteristics of electronic devices without heteroj unction s. On the other hand, ultra-small MOSFETs certainly exhibit important quantum effects that the DG model will include: quantum repulsion of the inversion and gate charges from the oxide interfaces, and quantum tunneling through thin gate oxides. We present initial results of 2-D DG simulations of ultra-small MOSFETs. Subtle but important issues involving the specification of the model, boundary conditions, and interface constraints for DG simulation of MOSFETs will also be illuminated.

Biegal, Bryan A.↗
DOE OSTI2025

Cornering relative symmetry theories

The symmetry data of a 𝑑-dimensional quantum field theory (QFT) can often be captured in terms of a higher-dimensional symmetry topological field theory. In top-down (i.e., stringy) realizations of this structure, the QFT in question is localized in a higher-dimensional bulk. In many cases of interest, however, the associated (𝑑+1)-dimensional bulk is not fully gapped and one must instead consider a filtration of theories to reach a gapped bulk in 𝐷 =𝑑 + 𝑚 dimensions. Overall, this leads us to a nested structure of relative symmetry theories which descend to coupled edge modes, with the original QFT degrees of freedom localized at a corner of this 𝐷-dimensional bulk system. We present a bottom-up characterization of this structure and also show how it naturally arises in a number of string-based constructions of QFTs with both finite and continuous symmetries.

M-theory↗
DOE OSTI2026

Position Operators in Terms of Converging Finite-Dimensional Matrices and Their Intertwining with Geometry, Transport, and Gauge

The position operator 𝑟̂ appears as 𝑖∂ 𝑝 in wave mechanics, while its matrix form (e.g., under a Bloch basis) is well known diverging in diagonals, causing difficulties in basis transformation, observable yielding, etc. We aim to find a convergent r-matrix (CRM) to improve the existing divergent r-matrix (DRM), and investigate its influence at both the conceptual and the application levels. A key modification is increasing the familiar substitution of 𝑟̂ by 𝑖∂ 𝑝 to 𝑖∑ 𝑗 ∂ 𝑘 𝑗 , namely the N-th Weyl algebra. Resolving the divergence makes r-matrix rigorously defined, and we are able to show r-matrix is distinct from a spin matrix in terms of its defining principles, transformation behavior, and the observable it yields. Conceptually, the CRM fills the logical gap between the r-matrix and the Berry connection (this unremarked vagueness has caused the diagonal divergence). In application, we focus on transport, and discover that the Hermitian matrix is not identical with the associative Hermitian operator, i.e., 𝑟 𝑚,𝑛 = 𝑟$^∗_{𝑛,𝑚}$ ⇎ 𝑟̂ = 𝑟̂ † , which subtly affects the celebrated Berry curvature formula for adiabatic current. We also discuss how such a non-representation CRM can contribute to building a unified transport theory.

Weyl algebras↗
DOE OSTI2025

On the holographic dual of a symmetry operator at finite temperature

Topological symmetry operators of holographic large 𝑁 CFT 𝐷 ’s are dual to dynamical branes in the gravity dual AdS 𝐷+1 . We use this correspondence to establish a dictionary between thermal expectation values of symmetry operators in the Euclidean CFT 𝐷 and the evaluation of gravitational saddles in the presence of a dynamical brane. Expectation values of 0-form symmetry operators in the CFT 𝐷 are then related to branes wrapped on volume minimizing cycles in the bulk, i.e., the Euclidean continuation of a black hole horizon. We illustrate with some representative examples, including gravity in AdS 3 , duality/triality defects in four-dimensional 𝒩 = 4 super Yang-Mills theory, and the dual of R-symmetry operators probing five-dimensional Bogomol’nyi–Prasad–Sommerfield black holes.

Anomalies↗
DOE OSTI2025

Angle-resolved polarized Raman spectroscopy study of phosphorene nanoribbons

We present a systematic angle-resolved polarized Raman spectroscopy (ARPRS) study of black phosphorus (BP) nanostructures formed via electrochemical sodium- and lithium-ion intercalation. Sodium intercalation leads to bundles of densely packed, highly uniform phosphorene nanoribbons (PNRs) separated by parallel amorphous channels, whereas lithium intercalation results in shorter, irregular nanoribbon-like segments with lower aspect ratios. In both cases, six additional Raman peaks (P1–P6) appear alongside the three primary Raman-active modes of BP (A$^{1}_{g}$, B 2g , and A$^{2}_{g}$). These peaks are attributed to the amorphous regions, as confirmed by their isotropic angular dependence in ARPRS measurements. The three BP modes show pronounced angular variations that differ significantly between the two intercalated samples. In sodium-intercalated BP, A$^{1}_{g}$ and A$^{2}_{g}$ modes retain a dumbbell-like angular dependence under parallel polarization with enhanced anisotropy and reduced symmetry under crossed polarization. At the same time, the B 2g mode transitions from four-lobed (cloverleaf) polar plot to a butterfly-like one. In contrast, lithium-intercalated BP exhibits weaker anisotropy and less distinct angular polar plots for all three modes. These differences reflect the sensitivity of phonon behavior to underlying nanostructure morphology. The vibrational frequencies density of states (FDOS) calculations attribute the B 2g mode transformation to phonon band folding and mode mixing in PNRs. This study demonstrates the power of ARPRS in probing phonon-structure relationships and highlights the influence of edge geometry and quantum confinement on phonon dispersion in PNRs.

77 NANOSCIENCE AND NANOTECHNOLOGY↗