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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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All sourcesNASA NTRSDOE OSTI
NASA NTRS1980

Effects of angular-momentum-changing collisions on dielectronic satellite spectra

A generalization of the low-density corona-model theory of the intensities of satellite lines of the resonance lines emitted by multiply charged helium-like ions in the X-ray spectra of high-temperature plasmas is developed in order to take account of electron collisional transitions between close autoionizing levels. A formalism for determining the population densities of the autoionizing levels and the satellite line intensities is presented, and the quantum mechanical calculation of autoionization, radiative decay and electron-induced collisional transitions is discussed. Generalized emission rate coefficients corresponding to dielectronic recombination and inner-shell-electron collisional excitation are tabulated as functions of electron density and temperature. The procedure is then used to illustrate the effects of angular-momentum-changing electron collisions on the intensities of the satellites of the 1s2p 1P to 1s2 1S resonance line of the ions Al XII and Si XIII. It is concluded that the collisional transitions have their most significant effect on the intensities of satellite transitions from metastable autoionizing states, which may be useful in determining plasma densities.

Jacobs, V. L.↗
NASA NTRS1999

Coherent Pump-Probe Interactions and Terahertz Intersubband Gain in Semiconductor Quantum Wells

In recent years there has been considerable interest in intersubband-transition-based infrared semiconductor quantum well (QW) lasers because of their potential applications. In the mid-infrared range, both electrically-injected quantum cascade lasers [1] and optically-pumped multiple QW lasers [2] have been experimentally realized. In these studies, optical gain is due to population inversion between the lasing subbands. It was also proposed that stimulated Raman scattering in QW systems can produce net infrared optical gain [3j. In such a nonlinear optical scheme, the appearance of optical gain that may lead to intersubband Raman lasers does not rely on the population inversion. Since, in tile resonant Raman process (Raman gain is the largest in this case), the pump field induces population redistribution among subbands in the QW s ystem, it seems that a realistic estimate of the optical gain has to include this effect. Perturbative calculations used in the previous work [3] may overestimate the Raman gain. In this paper we present a nonperturbative calculation of terahertz gain of optically-pumped semiconductor step quantum wells. Limiting optical transitions within the conduction band of QW, we solve the pump-field-induced nonequilibrium distribution function for each subband of the QW system from a set of coupled rate equations. Both intrasubband and intersubband relaxation processes in the quantum well system are included. Taking into account the coherent interactions between pump and THz (signal) waves, we we derive the susceptibility of the QW system for the THz field. For a GaAs/AlGaAs step QW, we calculate the Thz gain spectrum for different pump frequencies and intensities. Under moderately strong pumping (approximately 0.3 MW/sq cm), a significant THz gain (approximately 300/m) is predicted. It is also shown that the coherent wave interactions (resonant stimulated Raman processes) contribute significantly to the THz gain.

Liu, Ansheng↗
NASA NTRS1983

Quantum/classical mode evolution in free electron laser oscillators

The problem of oscillator evolution and mode competition in free electron lasers is studied. Relativistic quantum field theory is used to calculate electron wave functions, the angular distribution of spontaneous emission, and the transition rates for stimulated emission and absorption in each mode. The photon rate equation for the weakfield regime is presented. This rate equation is applied to oscillator evolution with a conventional undulator, a two-stage optical klystron, and a tapered undulator. The effects of noise are briefly discussed.

Bosco, P.↗
NASA NTRS1985

Electron-impact vibrational excitation rates in the flow field of aeroassisted orbital transfer vehicles

This paper examines the vibrational excitation rate processes expected in the flow field of aeroassisted orbital transfer vehicles (AOTVs). An analysis of the multiple-quantum vibrational excitation processes by electron impact is made to predict the vibrational excitation cross sections, rate coefficients, and relaxation times which control vibrational temperature. The expression for the rate of electron-vibration energy transfer is derived by solving the system of master equations which account for the multiple-level transitions. The vibrational excitation coefficients, which are the prerequisite physical quantities in solving the obtained vibrational equation, are calculated based on the theoretically predicted cross sections. These cross sections are obtained from quantum mechanical calculations, based on the concept that vibrational excitation of molecules by electron impact occurs through formation of an intermediate negative ion state. Finally, the modified Landau-Teller-type rate equation, which is suitable for the numerical calculations for the AOTV flow fields, is suggested.

Lee, J.-H.↗
NASA NTRS1976

Double-quantum vibrational energy transfer in the O3-CO and O3-OCS systems

Using the CO2 laser induced fluorescence technique at 298 K for excitation of the P(30) transition in O3 or the P(22) transition in OCS, double-quantum vibrational energy transfer was studied in the O3-CO and O3-OCS binary gas systems. Rapid rates were observed for energy transfer from the CO (nu = 1) to the coupled O3(200), O3(101), and O3(002) levels, as well as for the transfer from the coupled O3(001) and O3(100) levels to the OCS(020) level. Deactivation of OCS by N2, Ar, and OCS was studied and deactivation rate constants were measured. The experimental results are compared with those calculated using the first order perturbation theory of dipole transition-moment interactions (Sharma and Brau, 1969) as modified by Tam (1972). An attempt is made to interpret the obtained results.

Hui, K.-K.↗
NASA NTRS1985

Collisional excitation of molecules in dense interstellar clouds

State transitions which permit the identification of the molecular species in dense interstellar clouds are reviewed, along with the techniques used to calculate the transition energies, the database on known molecular transitions and the accuracy of the values. The transition energies cannot be measured directly and therefore must be modeled analytically. Scattering theory is used to determine the intermolecular forces on the basis of quantum mechanics. The nuclear motions can also be modeled with classical mechanics. Sample rate constants are provided for molecular systems known to inhabit dense interstellar clouds. The values serve as a database for interpreting microwave and RF astrophysical data on the transitions undergone by interstellar molecules.

Green, S.↗
NASA NTRS1990

Small band gap superlattices as intrinsic long wavelength infrared detector materials

Intrinsic long wavelength (lambda greater than or equal to 10 microns) infrared (IR) detectors are currently made from the alloy (Hg, Cd)Te. There is one parameter, the alloy composition, which can be varied to control the properties of this material. The parameter is chosen to set the band gap (cut-off wavelength). The (Hg, Cd)Te alloy has the zincblend crystal structure. Consequently, the electron and light-hole effective masses are essentially inversely proportional to the band gap. As a result, the electron and light-hole effective masses are very small (M sub(exp asterisk)/M sub o approx. M sub Ih/M sub o approx. less than 0.01) whereas the heavy-hole effective mass is ordinary size (M sub hh(exp asterisk)/M sub o approx. 0.4) for the alloy compositions required for intrinsic long wavelength IR detection. This combination of effective masses leads to rather easy tunneling and relatively large Auger transition rates. These are undesirable characteristics, which must be designed around, of an IR detector material. They follow directly from the fact that (Hg, Cd)Te has the zincblend crystal structure and a small band gap. In small band gap superlattices, such as HgTe/CdTe, In(As, Sb)/InSb and InAs/(Ga,In)Sb, the band gap is determined by the superlattice layer thicknesses as well as by the alloy composition (for superlattices containing an alloy). The effective masses are not directly related to the band gap and can be separately varied. In addition, both strain and quantum confinement can be used to split the light-hole band away from the valence band maximum. These band structure engineering options can be used to reduce tunneling probabilities and Auger transition rates compared with a small band gap zincblend structure material. Researchers discuss the different band structure engineering options for the various classes of small band gap superlattices.

Smith, Darryl L.↗
NASA NTRS2018

Microcalorimeter Array Development for the ATHENA X-Ray Integral Field Unit

The X-ray integral field unit (X-IFU) for ESA's Athena X-ray observatory will consist of 3840 AC-biased transition edge sensors (TESs), read out using frequency domain multiplexing (FDM). In this paper we describe details of the latest pixels geometries that are being designed for the current baseline array configuration. This includes details on how important TES properties (transition parameters, thermal design of the pixels, absorber composition) are being optimized to meet the target energy resolution, count-rate and quantum efficiency. We also present the latest design optimizations specifically targeted at mitigating AC-bias phenomena in Mo/Au TESs that can degrade performance.

Smith, Stephen↗
NASA NTRS1994

Theoretical investigation of wave-vector-dependent analytical and numerical formulations of the interband impact-ionization transition rate for electrons in bulk silicon and GaAs

The electron interband impact-ionization rate for both silicon and gallium arsenide is calculated using an ensemble Monte Carlo simulation with the expressed purpose of comparing different formulations of the interband ionization transition rate. Specifically, three different treatments of the transition rate are examined: the traditional Keldysh formula, a new k-dependent analytical formulation first derived by W. Quade, E. Scholl, and M. Rudan (1993), and a more exact, numerical method of Y. Wang and K. F. Brennan (1994). Although the completely numerical formulation contains no adjustable parameters and as such provides a very reliable result, it is highly computationally intensive. Alternatively, the Keldysh formular, although inherently simple and computationally efficient, fails to include the k dependence as well as the details of the energy band structure. The k-dependent analytical formulation of Quade and co-workers overcomes the limitations of both of these models but at the expense of some new parameterization. It is found that the k-dependent analytical method of Quade and co-workers produces very similar results to those obtained with the completely numerical model for some quantities. Specifically, both models predict that the effective threshold for impact ionization in GaAs and silicon is quite soft, that the majority of ionization events originate from the second conduction band in both materials, and that the transition rate is k dependent. Therefore, it is concluded that the k-dependent analytical model can qualitatively reproduce results similar to those obtained with the numerical model yet with far greater computational efficiency. Nevertheless, there exist some important drawbacks to the k-dependent analytical model of Quade and co-workers: These are that it does not accurately reproduce the quantum yield data for bulk silicon, it requires determination of a new parameter, related physically to the overlap intergrals of the Bloch state which can only be adjusted by comparison to experiment, and fails to account for any wave-vector dependence of the overlap integrals. As such the transition rate may be overestimated at those points for which 'near vertical,' small change in k, transitions occur.

Kolnik, Jan↗
NASA NTRS1994

Theoretical Investigation of Wave-Vector-Dependent Analytical and Numerical Formulations of the Interband Impact-Ionization Transition Rate for Electron in Bulk Silicon and GaAs

The electron interband impact-ionization rate for both silicon and gallium arsenide is calculated using an ensemble Monte Carlo simulation with the expressed purpose of comparing different formulations of the interband ionization transition rate. Specifically, three different treatments of the transition rate are examined: the traditional Keldysh formula, a new k-dependent analytical formulation first derived by W. Quade, E Scholl, and M. Rudan, and a more exact, numerical method of Y. Wang and K. F. Brennan. Although the completely numerical formulation contains no adjustable parameters and as such provides a very reliable result, it is highly computationally intensive. Alternatively, the Keldysh formula, although inherently simple and computationally efficient, fails to include the k dependence as well as the details of the energy band structure. The k-dependent analytical formulation of Quade and co-workers overcomes the limitations of both of these models but at the expense of some new parameterization. It is found that the k-dependent analytical method of Quade and co-workers produces very similar results to those obtained with (he completely numerical model for some quantities. Specifically, both models predict that the effective threshold for impact ionization in GaAs and silicon is quite soft, that the majority of ionization events originate from the second conduction band in both materials, and that the transition rate is k dependent. Therefore, it is concluded that the k-dependent analytical model can qualitatively reproduce results similar to those obtained with the numerical model yet with far greater computational efficiency. Nevertheless, there exist some important drawbacks to the k-dependent analytical model of Quade and co-workers: These are that it does not accurately reproduce the quantum yield data for bulk silicon, it requires determination of a new parameter, related physically to (he overlap integrals of the Bloch state which can only be adjusted by comparison to experiment, and fails to account for any wave-vector dependence of the overlap integrals. As such [he transition rate may be overestimated at those points for which "near vertical," small change in k, transitions occur.

Kolnik, Jan↗
NASA NTRS2015

Instantons in Quantum Annealing: Thermally Assisted Tunneling Vs Quantum Monte Carlo Simulations

Recent numerical result (arXiv:1512.02206) from Google suggested that the D-Wave quantum annealer may have an asymptotic speed-up than simulated annealing, however, the asymptotic advantage disappears when it is compared to quantum Monte Carlo (a classical algorithm despite its name). We show analytically that the asymptotic scaling of quantum tunneling is exactly the same as the escape rate in quantum Monte Carlo for a class of problems. Thus, the Google result might be explained in our framework. We also found that the transition state in quantum Monte Carlo corresponds to the instanton solution in quantum tunneling problems, which is observed in numerical simulations.

Quantum Monte Carlo↗
NASA NTRSDate not supplied

Examination of Mars2020 Shock-Layer Conditions via Infrared Laser Absorption Spectroscopy of CO2 and CO

Amid-infrared laser absorption diagnostic was deployed to study a simulated Mars2020 shock layer in the Electric Arc Shock Tube (EAST) facility at NASA’s Ames Research Center. Rapid RF-diplexing techniques enabled quantitative temperature and number density measurements of CO2 and CO with μs-resolution over an incident shock velocity range of 1.39 – 3.75 km/s. Two interband cascade lasers were utilized at 4.17 and 4.19 μm to resolve eight CO2 asymmetric stretch fundamental band (𝜈3) transitions from two different vibrational levels: 0000 (ground state) and 0110 (first excited bending mode). The probed rotational levels span across J” = 58 to J” = 140. Results are compared to DPLR simulations of the shock layer using kinetic mechanisms of Johnston et al. and Cruden et al. At shock velocities below 3.1 km/s, the agreement between the measurements and the Johnston mechanism is typically within 5% for temperature and within 10% for number density. At shock velocities above 3.1 km/s, the CO2 measurement becomes sensitive to a thin boundary layer and corrections of this effect are presented. On test cases with enough energy to dissociate CO2, a quantum cascade laser scanned the P(2, 20), P(0, 31), and P(3, 14) transitions of the CO fundamental band at 4.98 μm. CO formation rate is measured to be close to the Johnston kinetic mechanism at low velocities, and then trending towards the Cruden kinetic mechanism at high velocities. On a few low velocity test cases, rovibrational relaxation of the Martian atmosphere is probed with μs resolution.

Laser Absorption↗
NASA NTRS1971

Analytic expression for the energy-transfer rate from photoelectrons to thermal-electrons.

An analytic form is given for the energy-transfer rate from photoelectrons to thermal electrons. The expression fits the classical formulation of Itakawa and Aono (1966) at low energies and gives a smooth transition to fit the quantum mechanical equation of Schunk and Hays (1971) at higher energies. The corresponding loss function or stopping power has a form that is convenient in auroral and dayglow calculations.

Swartz, W. E.↗
NASA NTRS1998

Molecular Processes in Comets

The research focused on molecular hydrogen and its response to ultraviolet radiation, photoelectron impact excitation and X-ray radiation and on the interpretation of the ultraviolet spectra of the Jupiter dayglow and auroras. A systematic effort was made to obtain reliable rate coefficients for rovibrational energy transfer of H2, particularly in collisions with hydrogen atoms. We carried out elaborate quantum-mechanical calculations of the scattering of H and H2 on what had been characterized as a reliable potential energy surface of the H3 molecular system. These calculations took into account reactive channels and rate coefficients for ortho-para transitions were obtained. Quantal calculations are too complex to be applied to all the possible rovibrational transitions and we turned to a semi-classical method. With it we calculated rate coefficients for transitions, reactive and non-reactive, for all the rovibrational levels. We carried out the calculations for three of the available H3 potential energy surfaces. We discovered an unexpected sensitivity of the rate coefficients for the non-reactive channels to the potential energy surface. This discovery stimulated more thorough investigations of the potential energy surface elsewhere and to the construction of a new surface. We have used it in further semi-classical calculations in work that will shortly be 2 completed and which, together with new quantum-mechanical calculations should comprise a set of reliable rate coefficients that can be used in discussions of H2 on the Jovian planets. We carried out a detailed study of the Jovian ultraviolet dayglow. There has been a long-running argument about the dayglow on Jupiter. There are two sources of excitation: fluorescence and photoelectron impact excitation. It had been argued that a third source "the electron glow" was needed to bring theory and observation into agreement. We believe we have shown conclusively that the third source is unnecessary. We have achieved a close quantitative agreement between the predicted spectrum arising from fluorescence and photoelectrons and the measured spectrum. We also demonstrated a method by which the presence of HD could be established observationary. Similar calculations were carried out of the ultraviolet spectra of the Jovian auroras. We again found close agreement. Indeed, the agreement was so detailed we were able to derive the temperature of the atmosphere. We found, contrary to the standard model of the time, a high temperature between 400 K and 600 K and established the presence of a significant temperature gradient. A large temperature gradient was indeed found by direct sampling with the Jupiter probe.

Dalgarno, A.↗
NASA NTRS1999

Terahertz Optical Gain Based on Intersubband Transitions in Optically-Pumped Semiconductor Quantum Wells: Coherent Pumped-Probe Interactions

Terahertz optical gain due to intersubband transitions in optically-pumped semiconductor quantum wells (QW's) is calculated nonperturbatively. We solve the pump- field-induced nonequilibrium distribution function for each subband of the QW system from a set of rate equations that include both intrasubband and intersubband relaxation processes. The gain arising from population inversion and stimulated Raman processes is calculated in a unified manner. We show that the coherent pump and signal wave interactions contribute significantly to the THz gain. Because of the optical Stark effect and pump-induced population redistribution, optical gain saturation at larger pump intensities is predicted.

Liu, Ansheng↗
NASA NTRS2004

Microscopic Theory and Simulation of Quantum-Well Intersubband Absorption

We study the linear intersubband absorption spectra of a 15 nm InAs quantum well using the intersubband semiconductor Bloch equations with a three-subband model and a constant dephasing rate. We demonstrate the evolution of intersubband absorption spectral line shape as a function of temperature and electron density. Through a detailed examination of various contributions, such as the phase space filling effects, the Coulomb many-body effects and the non-parabolicity effect, we illuminate the underlying physics that shapes the spectra. Keywords: Intersubband transition, linear absorption, semiconductor heterostructure, InAs quantum well

Li, Jianzhong↗
NASA NTRS1999

Modeling of THz Lasers Based on Intersubband Transitions in Semiconductor Quantum Wells

In semiconductor quantum well structures, the intersubband energy separation can be adjusted to the terahertz (THz) frequency range by changing the well width and material combinations. The electronic and optical properties of these nanostructures can also be controlled by an applied dc electric field. These unique features lead to a large frequency tunability of the quantum well devices. In the on-going project of modeling of the THz lasers, we investigate the possibility of using optical pumping to generate THz radiation based on intersubband transitions in semiconductor quantum wells. We choose the optical pumping because in the electric current injection it is difficult to realize population inversion in the THz frequency range due to the small intersubband separation (4-40 meV). We considered both small conduction band offset (GaAs/AlGaAs) and large band offset (InGaAs/AlAsSb) quantum well structures. For GaAs/AlGaAs quantum wells, mid-infrared C02 lasers are used as pumping sources. For InGaAs/AlAsSb quantum wells, the resonant intersubband transitions can be excited by the near-infrared diode lasers. For three- and four-subband quantum wells, we solve the pumpfield-induced nonequilibrium distribution function for each subband of the quantum well system from a set of rate equations that include both intrasubband and intersubband relaxation processes. Taking into account the coherent interactions between pump and THz (signal) waves, we calculate the optical gain for the THz field. The gain arising from population inversion and stimulated Raman processes is calculated in a unified manner. A graph shows the calculated THz gain spectra for three-subband GaAs/AlGaAs quantum wells. We see that the coherent pump and signal wave interactions contribute significantly to the gain. The pump intensity dependence of the THz gain is also studied. The calculated results are shown. Because of the optical Stark effect and pump-induced population redistribution, the maximum THz gain saturates at larger pump intensities.

Liu, Ansheng↗
NASA NTRS1993

Molecular processes in comets

Classical trajectory calculations of the cross sections for vibrational and rotational energy exchange in direct and reactive collisions of hydrogen atoms and hydrogen molecules have been carried out. To test the sensitivity, three potential energy surfaces have been used. For the exchange transitions which occur at small internuclear distances, the rate coefficients for the three surfaces agree quite well. For the direct transitions, there are significant differences for the pure rotational transitions from j=0 to 2 and from j=1 to j=3 in which there is no change in vibration. For higher j the differences tend to disappear, suggesting that the rotational angular momentum can couple to the orbital angular momentum to overcome the centrifugal barrier. Complete numerically exact quantum mechanical calculations for the process in which vJ changes have been performed. Dr. M. A'Hearn has provided data on the fluorescent population of the NH rotational and fine-structure levels from which we should be able to predict accurate photodissociation lifetimes. The distribution rate of C2 is being investigated. A review of H3(+) in terrestrial and extraterrestrial environments was prepared for a volume of Advances in Atomic, Molecular and Optical Physics.

Dalgarno, A.↗