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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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30 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Robust and symmetric magnetic field dependency of superconducting diode effect in asymmetric Dirac semimetal SQUIDs

The recent demonstration of the superconducting diode effect (SDE) has generated renewed interest in superconducting electronics, in which devices such as compact superconducting diodes that can perform signal rectification with low-energy operations are needed. In this article, we present our results of robust and symmetric-in-magnetic-field SDE in asymmetric superconducting quantum interference devices (SQUIDs) realized in high-quality Dirac semimetal Cd 3 As 2 thin film grown by the molecular beam epitaxy technique. Consistent with previous work, a zero magnetic field SDE is observed. Furthermore, the difference in switching current is independent of the strength and polarity of an out-plane magnetic field in the range of −10 and 10 mT. We speculate that this robust symmetric-in-field SDE in our Dirac semimetal SQUIDs is due to the formation of helical spin texture, theoretically predicted in Dirac semimetals.

Current-voltage characteristic↗
DOE OSTI2026

Revisiting the Anisotropic Complex Refractive Indices of Sodium Nitrate for Interpretation of the Reflectance Spectrum of Pressed Pellets

Reflectance spectroscopy is notoriously confounding in that the measured spectral response is highly dependent upon the morphology of the sample. Fortunately, all such perturbations are neatly encoded by the complex refractive index of the sample. Herein, we seek to quantitatively model the measured infrared reflectance spectrum of a specularly flat pressed pellet sample of the birefringent compound, sodium nitrate. Single crystals of sodium nitrate were synthesized via a slow evaporation process and spectroscopically analyzed using polarization-dependent infrared single-angle reflectance spectroscopy. The anisotropic complex refractive index was measured from 7500 to 300 cm-1 (1.33 to 33.33 µm). The deduced anisotropic optical constants were found to be consistent with those previously reported. Once measured and validated, the optical constants were applied to model the pressed pellet reflectance spectrum. It was evident that an average of the anisotropic refractive indices was insufficient to account for the measured pellet reflectance. In order to account for contributions of all possible microcrystalline orientations within the pellet, the Python package PYELLI was used to calculate a basis set of orientation-dependent reflection spectra spanning the distinct ? and ? Euler rotations of the uniaxial crystal. When the population of orientations was allowed to vary freely in a spectral fit analysis, the fit-deduced orientations were tightly clustered along f = 45º, hinting at residual anisotropy in the pressed pellet sample. Conversely, an equally valid spectral fit (with marginally worse fit metric) was obtained when the population was constrained to an isotropic distribution of orientations. Subsequent non-zero cross-polarization reflectance measurements likewise suggested anisotropy in the pellet. However, both grazing incidence wide-angle x-ray scattering and scanning electron microscopy measurements revealed that the microcrystal orientations at the surface of the pressed pellet sample were isotropically distributed (and that the average crystallite size was larger than ?/10). Application of the measured complex refractive indices for modeling the reflectance spectrum of the pressed pellet, and rectification of these seemingly contradictory observations will be discussed.

Wilhelm, Michael J.↗
DOE OSTI2025

Realizing a topological diode effect on the surface of a topological Kondo insulator

Introducing the concept of topology into material science has sparked a revolution from classic electronic and optoelectronic devices to topological quantum devices. The latter has potential for transferring energy and information with unprecedented efficiency. Here, we demonstrate a topological diode effect on the surface of a three-dimensional material, SmB 6 , a candidate topological Kondo insulator. The diode effect is evidenced by pronounced rectification and photogalvanic effects under electromagnetic modulation and radiation at radio frequency. Our experimental results and modeling suggest that these prominent effects are intimately tied to the spatially inhomogeneous formation of topological surface states (TSS) at the intermediate temperature. This work provides a manner of breaking the mirror symmetry (in addition to the inversion symmetry), resulting in the formation of pn-junctions between puddles of metallic TSS. Further, this effect paves the way for efficient current rectifiers or energy-harvesting devices working down to radio frequency range at low temperature, which could be extended to high temperatures using other topological insulators with large bulk gap.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Impact of proton irradiation on 4H-SiC Low Gain Avalanche Detectors (LGADs)

Silicon carbide (SiC) particle detectors have the potential to provide time resolutions and robust performance in extreme environments which exceed that of silicon detectors. In this work 4H-SiC low gain avalanche detectors (LGADs) and complementary PiN diodes were irradiated with 2.5 GeV protons at fluences up to 3.33 × 10 14 p/cm 2 . The electrostatic performance of both irradiated and non-irradiated devices was evaluated using I-V and C-V measurements. Moreover, charge collection measurements using α particles were also conducted. SiC LGADs displayed a loss in rectification, high ON-state resistances >10 10 Ω-cm 2 , and the complete removal of gain when exposed to the highest proton fluence. Additionally, the reductions in capacitance and OFF-state current pointed to compensation of the gain layer as a gain reducing mechanism. The introduction of radiation-induced defects also hinders carrier acceleration, which reduces impact ionization and further gain reduction. LGADs exposed to a fluence of 1 × 10 14 p/cm 2 experienced a partial recovery in gain (originally having a value of ∼ 2) with a value of ∼ 1.65 when applying a bias of 500 V. Charge trapping was also seen in the reduction of charge collection efficiency (CCE) to ∼ 65% for the PiN diode. However, despite the reduction in device performance, the demonstration of a measurable signal after irradiation points to the potential of SiC LGAD detectors for future high energy physics applications.

43 PARTICLE ACCELERATORS↗
DOE OSTI2026

High-performance nanodevices based on WGe 2⁢ N 4 monolayer

Two-dimensional (2D) 𝑀⁢𝐴 2 ⁢𝑍 4 -family monolayers (MLs) have emerged as promising semiconductors due to their element tunability and rich electronic and optoelectronic properties. In this work, using first-principles calculations, we investigate the electronic, mechanical, transport, and optoelectronic properties of WGe 2⁢ N 4 ML with a small indirect bandgap. Various nanodevices based on WGe 2 ⁢N 4 ML are studied, including pn-junction diodes, pin-junction field-effect transistors (FETs), and phototransistors. The present results reveal that the WGe 2⁢ N 4 ML exhibits high rigidity, thermal stability, and remarkable light absorption. These nanodevices demonstrate excellent performance: (1) the pn-junction diode shows a high rectification ratio and a near-Shockley-limit ideality factor, (2) the pin-junction FET exhibits significant gate voltage modulation capability with subthreshold swing as low as 71 mV/dec (close to the theoretical limit calculated based on the Boltzmann distribution), and (3) the phototransistor displays strong optoelectronic responses in the visible and ultraviolet regions. Furthermore, these findings establish WGe 2 ⁢N 4 ML as a versatile platform for developing high-performance, multifunctional nanoelectronic and optoelectronic devices, significantly expanding the application potential of 𝑀⁢𝐴 2⁢ 𝑍 4 -family materials.

2-dimensional systems↗
DOE OSTI2024

Stripe and bubble ratchets on asymmetric substrates

We show that various nonmonotonic ratchet effects can arise when mesophase pattern-forming systems, which exhibit anisotropic crystal, stripe, and bubble regimes, are coupled to one-dimensional asymmetric substrates under ac driving. The patterns emerge in the absence of a substrate when the ratio of attraction to repulsion is varied for particles with competing short-range attraction and long-range repulsion potentials. In the presence of the substrate, we find that the ratchet efficiency varies nonmonotonically with increasing attraction, depending upon how well the mesophase morphology matches the substrate spacing and periodicity. For strong repulsion, there is a weak but finite ratchet effect, while at intermediate attraction, there is a robust ratchet effect in which the system forms stripes aligned with the substrate symmetry direction. For strong attraction, large bubbles appear that have weak or no ratchet effects when the bubble width exceeds the substrate lattice spacing, causing the bubble to be only weakly coupled to the substrate. For very strong attraction, small bubbles form and undergo a strong ratchet effect with an efficiency that oscillates as a function of ac drive amplitude. Although the small bubble regime is a strongly correlated regime in which each bubble contains many particles, the system behaves as if it is in a single-particle regime since the bubble width is much smaller than the substrate lattice spacing. We map out the different rectification phases as a function of the pattern morphology, substrate strength, and ac drive amplitude. The pronounced ratchet effects that we observe in some regimes can be exploited for pattern sorting in hard and soft matter systems. Published by the American Physical Society 2024

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

A Digital Twin Framework for Liquid-cooled Supercomputers as Demonstrated at Exascale

We present ExaDigiT, an open-source framework for developing comprehensive digital twins of liquid-cooled supercomputers. It integrates three main modules: (1) a resource allocator and power simulator, (2) a transient thermo-fluidic cooling model, and (3) an augmented reality model of the supercomputer and central energy plant. The framework enables the study of "what-if" scenarios, system optimizations, and virtual prototyping of future systems. Using Frontier as a case study, we demonstrate the framework's capabilities by replaying six months of system telemetry for systematic verification and validation. Such a comprehensive analysis of a liquid-cooled exascale supercomputer is the first of its kind. ExaDigiT elucidates complex transient cooling system dynamics, runs synthetic or real workloads, and predicts energy losses due to rectification and voltage conversion. Throughout our paper, we present lessons learned to benefit HPC practitioners developing similar digital twins. We envision the digital twin will be a key enabler for sustainable, energy-efficient supercomputing.

Brewer, Wes↗
DOE OSTI2024

Electro-physical properties of surface-barrier diodes on low-resistance n-Cd 0.96 Mn 0.04 Te 0.96 Se 0.04 crystals

The electro-physical properties of Cd 0.96 Mn 0.04 Te 0.96 Se 0.04 n-type conductivity single crystals with relatively low resistivity were studied. The determined resistivity of semiconductor single crystals Cd 0.96 Mn 0.04 Te 0.96 Se 0.04 n-type conductivity is equal to ρ≈2 Ω-cm at 293K. The activation energy of dark conductivity, measured from the temperature dependence of the resistivity of the In/Cd 0.96 Mn 0.04 Te 0.96 Se 0.04 /In structure, is equal to ΔE≈0.11eV. From optical measurements of the absorption coefficient from the energy of photons in the region of large α, the band-gap width of the single crystal was found, which is equal to E g =1.53eV. Diode structures of Ni/Cd 0.96 Mn 0.04 Te 0.96 Se 0.04 /In obtained by vacuum sputtering of Ni on the surface of a single crystal n-Cd 0.96 Mn 0.04 Te 0.96 Se 0.04 were manufactured and studied. Here, the rectification coefficient at a voltage of U=1V is equal to 10 8 . Within the framework of the Sah-Noys-Shockley carrier generation-recombination model, a quantitative match of the experimental measurements of the volt-ampere characteristics with the calculation was achieved.

(Cd,Mn)(Te,Se)↗
DOE OSTI2025

Directed self-assembly of block copolymers for high-precision patterning in the era of extreme ultraviolet lithography

Extreme ultraviolet (EUV) lithography enables unprecedented resolution in semiconductor patterning but faces critical challenges in developing resist materials that achieve high-precision at economically viable throughput. Directed self-assembly (DSA) of block copolymers (BCPs) offers a promising solution for pattern rectification by leveraging thermodynamically determined domain structures to decouple BCP pattern quality from the imperfect original lithographic pattern. This prospective presents an overview of recent progress on the EUV + DSA strategy, covering advances in BCP material design, processing, metrology, and pattern transfer. We highlight recent advances in high-χ BCPs with perpendicular orientation and domain spacings compatible with EUV dimensions, leveraging A-b-(B-r-C) architectures. We also discuss progress in chemical pre-pattern fabrication using both positive- and negative tone resists, along with processing strategies to minimize defects and roughness based on BCP thermodynamics and assembly kinetics. We further examine metrology platforms for characterizing the thermodynamics of BCP materials and quantifying the size and shape of BCP domains. Lastly, we review pattern transfer strategies for generating functional inorganic masks suitable for semiconductor manufacturing. Together, these advances highlight the potential of DSA to complement EUV lithography, offering a pathway to address critical challenges in achieving high-precision patterning for the semiconductor industry.

Lee, Kyunghyeon [Univ. of Chicago, IL (United Stat↗
DOE OSTI2024

Optical and photoelectric properties of surface barrier diodes based on n- Hg3In2Te6 crystals

The high radiation resistance of Hg3In2Te6 (MIT) single crystals to large doses of ionizing radiation makes devices quite attractive. Such a feature of the crystal structure has not only important advantages, but also causes serious technological difficulties in doping and controlling the specific resistance within the required limits and type of conductivity of single crystals. These technological difficulties create serious problems when creating structures with a potential barrier, especially with a p-n junction. At the moment, there are no publications on the creation of a p-n junction based on MIT. The only alternative is to create a potential barrier such as a Schottky diode or a metal-dielectric-semiconductor structure. This limits the use of MIT to produce, for example, rectifier diodes that can operate at relatively high reverse bias voltages. The typical resistivity of single crystals of MIT of n-type conductivity, which are used for the manufacture of diodes and photodiodes, is approximately equal to ρ≈103-104 Ω×cm. Such a specific resistance leads to a relatively large resistance of the neutral part of the single crystal, which in turn limits the direct currents of the rectifier diodes and significantly limits an important parameter of photodiodes - the dynamic range of the watt-ampere characteristic. This problem arises from the relatively high series resistance of the substrate. For rectifier diodes, this relatively large series resistance leads to a significant forward bias voltage drop, which reduces both the rectification factor and the amount of rectified current. We have already created diodes and photodiodes on Cr/MIT/Cr single crystals with a specific resistance of ρ≈103-104 Ω×cm. The diodes had relatively small dark currents but had the disadvantage of a relatively large specific resistance of the substrate, which we have already discussed above [1,2,3].

Sklyarchuk, V.↗
DOE OSTI2025

Tunable reciprocal and nonreciprocal contributions to 1D Coulomb drag

Coulomb drag is a powerful tool to study interactions in coupled low-dimensional systems. Historically, Coulomb drag has been attributed to a frictional force arising from momentum transfer whose direction is dictated by the current flow. In the absence of electron-electron correlations, treating the Coulomb drag circuit as a rectifier of noise fluctuations yields similar conclusions about the reciprocal nature of Coulomb drag. In contrast, recent findings in one-dimensional systems have identified a nonreciprocal contribution to Coulomb drag that is independent of the current flow direction. In this work, we present Coulomb drag measurements between vertically coupled GaAs/AlGaAs quantum wires separated vertically by a hard barrier only 15 nm wide, where both reciprocal and nonreciprocal contributions to the drag signal are observed simultaneously, and whose relative magnitudes are temperature and gate tunable. Our study opens up the possibility of studying the physical mechanisms behind the onset of both Coulomb drag contributions simultaneously in a single device, ultimately leading to a better understanding of Luttinger liquids in multi-channel wires and paving the way for the creation of energy harvesting devices.

Coulomb Drag↗
DOE OSTI2025

Roadmap on thermodynamics and thermal metamaterials

Thermal metamaterials represent a transformative paradigm in modern physics, synergizing thermodynamic principles with metamaterial engineering to master heat flow at will. As next-generation technologies demand multi-scale thermal control, this field urgently requires systematic frameworks to unify its multidisciplinary advances. Curated through a global collaboration involving over 50 specialists across 25 subdisciplines, this review primarily summarizes two decades of advancements, ranging from theoretical breakthroughs to functional implementations. The review reveals groundbreaking innovations in heat manipulation through the exploration of both classical and non-classical transport regimes, topological thermal control mechanisms, and quantum-informed phonon engineering strategies. By bridging physical insights like non-Hermitian thermal dynamics and valleytronic phonon transport with cutting-edge applications, we demonstrate paradigm-shifting capabilities: environment-adaptive thermal cloaks, AI-optimized metamaterials, and nonlinear thermal circuits enabling heat-based computation. Experimental milestones include 3D thermal null media with reconfigurable invisibility and thermal designs breaking classical conductivity limits. Here, this collaborative effort establishes an indispensable roadmap for physicists, highlighting pathways to quantum thermal management, entropy-controlled energy systems, and topological devices. As thermal metamaterials transition from laboratory marvels to technological cornerstones, this work provides the foundational lexicon and design principles for the coming era of intelligent thermal matter.

heat conduction control↗