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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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27 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS2001

Fabrication of Very High Efficiency 5.8 GHz Power Amplifiers using AlGaN HFETs on SiC Substrates for Wireless Power Transmission

For wireless power transmission using microwave energy, very efficient conversion of the DC power into microwave power is extremely important. Class E amplifiers have the attractive feature that they can, in theory, be 100% efficient at converting, DC power to RF power. Aluminum gallium nitride (AlGaN) semiconductor material has many advantageous properties, relative to silicon (Si), gallium arsenide (GaAs), and silicon carbide (SiC), such as a much larger bandgap, and the ability to form AlGaN/GaN heterojunctions. The large bandgap of AlGaN also allows for device operation at higher temperatures than could be tolerated by a smaller bandgap transistor. This could reduce the cooling requirements. While it is unlikely that the AlGaN transistors in a 5.8 GHz class E amplifier can operate efficiently at temperatures in excess of 300 or 400 C, AlGaN based amplifiers could operate at temperatures that are higher than a GaAs or Si based amplifier could tolerate. Under this program, AlGaN microwave power HFETs have been fabricated and characterized. Hybrid class E amplifiers were designed and modeled. Unfortunately, within the time frame of this program, good quality HFETs were not available from either the RSC laboratories or commercially, and so the class E amplifiers were not constructed.

Sullivan, Gerry↗
NASA NTRS2018

Development of Large Bandgap Materials Using Reactive Growth in Al-SI Eutectic for Optical and RF Applications

Carbon was utilized as reactive element to modify the microstructure using forced mixing during crystallization of the Al-Si alloy by rotation and stirring. We nucleated the material on SiC substrates while the Al-Si melt was rotated with a speed of 30rpm in a graphite crucible. Several experiments were performed and parameters such as time of mixing, soaking temperature, rotation rate of the substrate and rate of cooling during the solidification was changed. We observed dendrite and cell morphologies during the solidification of rotating melt. The microstructure was characterized by optical microscopy and SEM-EDX and compositional spectroscopy. The effect of carbon impurities was studied on the solidifying microstructure. When we used the longer soak time of the melt in presence of carbon impurities we observed the destruction of dendritic morphology and the formation of cellular and colony structures. Similar approach has been used for Ga2O3, a novel large bandgap material also.

Singh, N. B.↗
NASA NTRSDate not supplied

Ka-Band GaN-on-SiC MMIC Balanced High Power Amplifier for NASA's Lunar Missions

The feasibility of Ka-band GaN-on-SiC MMIC based balanced power amplifier for science data downlinks from NASA’s lunar mission assets in space is investigated. The balanced amplifier combines the RF output power from two power amplifiers using a rectangular waveguide based 3-dB hybrid coupler. The investigation includes characterizing the balanced amplifier for the overall RF output power, Gain, power added efficiency, RMS error vector magnitude for offset-QPSK, 8PSK, 16APSK, and 32APSK waveforms, 3rd order intermodulation products, and noise figure. The balanced amplifier has high output RF power and good linearity and can support high data rate downlinks from the surface and vicinity of the Moon to Earth.

Gallium Nitride↗
NASA NTRSDate not supplied

Ka-Band GaN-on-SiC MMIC Balanced High Power Amplifier for NASA's Lunar Missions

The feasibility of Ka-band GaN-on-SiC MMIC based balanced high power amplifier (HPA) for science data downlinks from NASA’s Lunar mission assets in space is investigated. The HPA combines the RF output power from two PAs using a rectangular waveguide based 3-dB hybrid coupler. The investigation includes characterizing the HPA for the overall RF output power, Gain, PAE, RMS EVM for offset-QPSK, 8PSK, 16APSK, and 32APSK waveforms, Spectrum, 3rd order IMD products, noise figure, phase noise, & group delay. The HPA has high Pout and good linearity and can support high data rate downlinks from the surface and vicinity of the Moon to Earth.

Rainee.N. Simons↗
NASA NTRS2003

Arrays of Carbon Nanotubes as RF Filters in Waveguides

Brushlike arrays of carbon nanotubes embedded in microstrip waveguides provide highly efficient (high-Q) mechanical resonators that will enable ultraminiature radio-frequency (RF) integrated circuits. In its basic form, this invention is an RF filter based on a carbon nanotube array embedded in a microstrip (or coplanar) waveguide, as shown in Figure 1. In addition, arrays of these nanotube-based RF filters can be used as an RF filter bank. Applications of this new nanotube array device include a variety of communications and signal-processing technologies. High-Q resonators are essential for stable, low-noise communications, and radar applications. Mechanical oscillators can exhibit orders of magnitude higher Qs than electronic resonant circuits, which are limited by resistive losses. This has motivated the development of a variety of mechanical resonators, including bulk acoustic wave (BAW) resonators, surface acoustic wave (SAW) resonators, and Si and SiC micromachined resonators (known as microelectromechanical systems or MEMS). There is also a strong push to extend the resonant frequencies of these oscillators into the GHz regime of state-of-the-art electronics. Unfortunately, the BAW and SAW devices tend to be large and are not easily integrated into electronic circuits. MEMS structures have been integrated into circuits, but efforts to extend MEMS resonant frequencies into the GHz regime have been difficult because of scaling problems with the capacitively-coupled drive and readout. In contrast, the proposed devices would be much smaller and hence could be more readily incorporated into advanced RF (more specifically, microwave) integrated circuits.

Hoppe, Daniel↗
NASA NTRS2004

High-Temperature Probe Station Developed to Characterize Microwave Devices Through 500 C

A photograph and a block diagram of the high-temperature probe station are shown. The system consists of the ceramic heater mounted on a NASA shuttle tile insulator, a direct current power supply, a personal-computer-based data acquisition and temperature controller, microwave probes, a microscope, and a network analyzer. The ability to perform microwave tests at high temperatures is becoming necessary. There is now a need for sensors and communication circuits that can operate at 500 C and above for aircraft engine development and monitoring during flight. To address this need, researchers have fabricated devices using wide bandgap semiconductors such as SiC with targeted operating temperatures of 500 to 600 C. However, the microwave properties of these devices often change drastically with temperature, so any designs that are intended to be used in such an environment must be characterized at high temperatures. For some reliability, lifetime, and direct-current testing, the device under test can be packaged and characterized in an oven. However, for RF and microwave measurements, it is usually not possible to establish a calibrated reference plane at the device terminals within a package. In addition, the characteristics of the package would vary over a 500 C temperature range, and this would have to be accounted for when the data were analyzed. A high temperature probe station allows circuits and devices to be characterized through on wafer measurements across a broad temperature range with known reference plane. The conventional, commercially available thermal wafer-probe stations that are used to evaluate microwave devices across a controlled temperature range have a typical upper limit of 200 C. Standalone thermal heating chucks are available with an extended upper temperature range of 300 to 400 C. To effectively characterize devices at temperatures up to and surpassing 500 C, Glenn researchers developed a custom probe station. In the past, custom probe stations have been developed to test devices under other extreme environments, such as cryogenic temperatures as low as 37 K. Similarly, this custom probe station was specifically modified for high-temperature use. It allows devices to be measured quickly and flexibly, without the use of wire bonds and test fixtures. The probe station is shown making scattering parameter measurements from 1 to 50 GHz with a Hewlett-Packard 8510C Network Analyzer. There is a half-wafer of silicon directly on top of the heater to provide a uniform heated platform for our sample. A quarter wafer of silicon carbide forms the substrate for our test circuit of several transmission lines.

Downey, Alan N.↗
NASA NTRS2004

2.45 GHz Rectenna Designed for Wireless Sensors Operating at 500 C

High temperature wireless sensors that operate at 500 C are required for aircraft engine monitoring and performance improvement These sensors would replace currently used hard-wired sensors and lead to a substantial reduction in mass. However, even if the sensor output data is transmitted wirelessly to a receiver in the cooler part of the engine, and the associated cables are eliminated, DC power cables are still required to operate the sensors and power the wireless circuits. To solve this problem, NASA is developing a rectenna, a circuit that receives RF power and converts it to DC power. The rectenna would be integrated with the wireless sensor, and the RF transmitter that powers the rectenna would be located in the cooler part of the engine. In this way, no cables to or from the sensors are required. Rectennas haw been demonstrated at ambient room temperature, but to date, no high temperature rectennas haw been reported. In this paper, we report the first rectenna designed for 2.45 GHz operation at 500 C. The circuit consists of a microstrip dipole antenna, a stripline impedance matching circuit, and a stripline low pass filter to prevent transmission of higher harmonics created by the rectifying diode fabricated on an Alumina substrate. The rectifying diode is the gate to source junction of a 6H Sic MESFET and the capacitor and load resistor are chip elements that are each bonded to the Alumina substrate. Each element and the hybrid, rectenna circuit haw been characterized through 500 C.

Ponchak, George E.↗
NASA NTRS1991

Diamond film deposition using microwave plasmas under low pressures

Microwave plasma depositions of diamond films have been investigated under low pressures of 10 mTorr to 10 Torr, at low substrate temperatures of 400 to 750 C, using high methane concentrations of 5 to 15 percent and oxygen concentrations of 5 to 10 percent in hydrogen plasmas. The deposition system consists of a microwave plasma chamber, a downstream deposition chamber, and a RF induction-heated sample stage. The deposition system can be operated in either high-pressure microwave or electron cyclotron resonance (ECR) modes by varying the sample stage position. Cathodoluminescence (CL) studies on diamond films deposited at 10 Torr pressure show that CL emissions at 430, 480, 510, 530, 560, 570 and 740 nm can be employed to characterize the quality of diamond films. High-quality, well-faceted diamond films have been deposited at 10 Torr and 600 C using 5 percent CH4 and 5 percent O2 in H2 plasmas; CL measurements on these films show very low N impurities and no detectable Si impurities. Diamond nucleation on SiC has been demonstrated by depositing well-faceted diamond crystallites on SiC-coated Si substrates.

Shing, Y. H.↗
DOE OSTI2021

Low Thermal Resistance (0.5 K/W) Ga 2 O 3 Schottky Rectifiers With Double-Side Packaging

The low thermal conductivity of Ga 2 O 3 has arguably been the most serious concern for Ga 2 O 3 power and RF devices. Despite many simulation studies, there is no experimental report on the thermal resistance of a large-area, packaged Ga 2 O 3 device. This work fills this gap by demonstrating a 15-A double-side packaged Ga 2 O 3 Schottky barrier diode (SBD) and measuring its junction-to-case thermal resistance (R θJC ) in the bottom-side- and junction-side-cooling configurations. The R θJC characterization is based on the transient dual interface method, i.e., JEDEC 51-14 standard. The R θJC of the junction- and bottom-cooled Ga 2 O 3 SBD was measured to be 0.5 K/W and 1.43 K/W, respectively, with the former R θJC lower than that of similarly-rated commercial SiC SBDs. This low R θJC is attributable to the heat extraction directly from the Schottky junction instead of through the Ga 2 O 3 chip. Here, the R θJC lower than that of commercial SiC devices proves the viability of Ga 2 O 3 devices for high-power applications and manifest the significance of proper packaging for their thermal management.

42 ENGINEERING↗