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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1994

Optical processing for semiconductor device fabrication

A new technique for semiconductor device processing is described that uses optical energy to produce local heating/melting in the vicinity of a preselected interface of the device. This process, called optical processing, invokes assistance of photons to enhance interface reactions such as diffusion and melting, as compared to the use of thermal heating alone. Optical processing is performed in a 'cold wall' furnace, and requires considerably lower energies than furnace or rapid thermal annealing. This technique can produce some device structures with unique properties that cannot be produced by conventional thermal processing. Some applications of optical processing involving semiconductor-metal interfaces are described.

Sopori, Bhushan L.↗
NASA NTRS2002

Nature of the Organic Signature in Dust from the Interstellar Medium: Laboratory Analog Studies

We measured the infrared (IR) nu(sub CH) absorption bands around 3.4 microns (2800 - 3000 cm(sup -1) in large laboratory-grown magnesium oxide (MgO) and natural olivine single crystals that crystallized from CO/CO2/H2O saturated melts. These bands are very similar to those from many astronomical sources, such as from dust in the diffuse interstellar medium (ISM), from the outflow of evolved stars, etc., and they are characteristic of aliphatic -CH2- and -CH3 entities. In our laboratory single crystals the VCH bands arise from C-H entities that were introduced by a solid solution process, and that are imbedded in the mineral matrix in form of polyatomic C(sub n) entities with C atoms bonded to O and to H. Heating breaks the C-H bonds, causing hydrogen to disperse in the mineral matrix. C-H bonds are re-established rapidly during annealing. We propose that dust grains probably contain the same type of internal C(sub n)-H entities in solid matrix rather than an external organic layer covering the grain surfaces. Thermodynamical arguments show that the concentration of organics in solid solution in small grains can be comparable to that found in astronomical environments.

Freund, M. M.↗
NASA NTRS1998

Wavelength Shifting in InP based Ultra-thin Quantum Well Infrared Photodetectors

We have demonstrated red-shifting of the wavelength response of a bound-to-continuum p-type ultra-thin InGaAs/Inp quantum well infrared photodetector after growth via rapid thermal annealing. Compared to the as-grown detector, the peak spectral response of the annealed detector was shifted to longer wavelength without any major degradation in responsivity characteristics.

Photodetector Thermal Annealing↗
NASA NTRS2010

A Novel Tungsten-Nickel Alloy Ohmic Contact to SiC at 900 C

A novel tungsten-nickel ohmic contact metallization on 4H-SiC and 6H-SiC capable of surviving temperatures as high as 900 C is reported. Preliminary results revealed the following: 1) ohmic contact on n-type 4H-SiC having net doping levels (Nd's) of 1.4 and 2 x 10(exp 19) per cubic centimeter, with specific contact resistances rhosNd's of 7.69 x 10(exp -4) and 5.81 x 10(exp -4) OMEGA (raised dot) square centimeters, respectively, after rapid thermal annealing (RTA), and 5.9 x 10(exp -3) and 2.51 x 10(exp -4) OMEGA (raised dot) square centimeters, respectively, after subsequent soak at 900 C for 1 h in argon, and 2) ohmic contact on n- and p-type 6H-SiC having Nd > 2 x 10(exp 19) and Na > 1 x 10(exp 20) per cubic centimeter, with rhosNd = 5 x 10(exp -5) and rhosNa = 2 X 10(exp -4) OMEGA (raised dot) square centimeter, respectively, after RTA, and rhosNd = 2.5 x 10 (exp -5) and rhosNa = 1.5 x 10(exp -4) OMEGA (raised dot) square centimeter after subsequent treatment at 900 C for 1 h in argon, respectively.

Okojie, Robert S.↗
NASA NTRS2018

Nanoscale Fabrication of Microwave Detectors from Commercially-Available CVD-Grown Monolayer Graphene

Using commercially-available monolayer graphene, synthesized by means of chemical vapor deposition, microwave power sensing elements have been nanofabricated and integrated with microwave-grade test structures suitable for on-wafer probing. The graphene, situated on a thermal oxide, was first cleaned of stray contaminants in a forming gas environment briefly held at 250 degrees Celsius using a rapid thermal annealer. Immediately following this step, the graphene was passivated with a protective aluminum oxide layer (approximately S nm in thickness). Micrometer-scale Corbino disc test structures were then fabricated in direct contact with the graphene using a self-aligned process, which relies on the fact that tetramethylammonium hydroxide develops the photoresist while removing the aluminum oxide. Graphene nanoribbons (with widths as small 400 nm) were then fabricated across the Corbino disc gaps using electron-beam writing in conjunction with a negative tone resist. The same developer exposed the majority of the graphene while defining nanometer-scale lines of photoresist stacked upon aluminum oxide. These stacks served as etch-stops while the unprotected graphene was ion-milled in an oxygen plasma. Finally, the photoresist was removed leaving behind passivated graphene nanoribbons. Damage caused by the fabrication was evaluated by comparing the Raman spectra of the grapheme before and after processing.

detectors↗
NASA NTRS1981

Stuffed MO layer as a diffusion barrier in metallizations for high temperature electronics

Auger electron spectroscopy was employed to characterize the diffusion barrier properties of molybdenum in the CrSi2/Mo/Au metallization system. The barrier action of Mo was demonstrated to persist even after 2000 hours annealing time at 300 C in a nitrogen ambient. At 340 C annealing temperature, however, rapid interdiffusion was observed to have occurred between the various metal layers after only 261 hours. The presence of controlled amounts of oxygen in the Mo layer is believed to be responsible for suppressing the short circuit interdiffusion between the thin film layers. Above 340 C, its is believed that the increase in the oxygen mobility led to deterioration of its stuffing action, resulting in the rapid interdiffusion of the thin film layers along grain boundaries.

Boah, J. K.↗
NASA NTRS1973

Remanent magnetization and structural effects due to shock in natural and man-made iron-nickel alloys

Explosive shock or meteorite impact are significant remagnetization processes. The mechanisms of remagnetization associated with the dynamic processes depend on the peak shock pressure, the nature of the shocked materials, and the behavior of the shock in the material. Magnetic measurements can be used to classify products formed during a shock process, and magnetic measurements can be used to investigate the process itself because of the special characteristics of the remanent magnetization vectors. The magnetic coercive force increases more rapidly in quenched and annealed iron-nickel alloys as nickel is added than it does in the alloys which have been shocked.

Wasilewski, P. J.↗
NASA NTRS1983

Annealing Solar Cells With Lasers

Laser anneals silicon solar cells rapidly enough for use in production. Laser frequently doubled neoduyminum: yttrium-aluminum-garnet (Nd:YAG) device. 30-m-diameter spot formed by lasers covers enough area to process silicon wafers rapidly. Laser anealed cells have efficiencies greater than 15 percent.

Katzeff, J. S.↗
NASA NTRS2021

Nanostructure and compositional segregation of soft magnetic FeNi-based nanocomposites with multiple nanocrystalline phases

Soft magnetic metal amorphous nanocomposite alloys are produced through rapid solidification and thermal annealing yielding nanocrystals embedded within an amorphous precursor. Similar free energies in Co-rich and FeNi-based alloy systems result in multiple nanocrystalline phases being formed during devitrification. Studies of multi-phase crystallization processes have been reported for Co-rich alloys but relatively few have investigated FeNi-based systems. A detailed characterization of compositional partitioning and microstructure of an optimally annealed FeNi-based MANC (Fe70Ni30)80Nb4Si2B14 alloy is presented through complementary high-resolution transmission electron microscopy (HRTEM) and atom probe tomography (APT). HRTEM demonstrates orientation relationships between FCC and BCC nanocrystals, suggesting heterogeneous nucleation of nanocrystals in the amorphous matrix or a cooperative mechanism of nucleation between BCC and FCC nanocrystallites. APT results show evidence for (i) the segregation of Fe and Ni between nanocrystals of different phases, (ii) B partitioning to the amorphous phase, and (iii) an Nb-enriched shell surrounding nanocrystals.

soft magnetic materials↗
NASA NTRS1982

Effects of processing and dopant on radiation damage removal in silicon solar cells

Gallium and boron doped silicon solar cells, processed by ion implantation followed by either laser or furnace anneal were irradiated by 1 MeV electrons and their postirradiation recovery by thermal annealing was determined. During the postirradiation anneal, gallium doped cells prepared by both processes recovered more rapidly and exhibited none of the severe reverse annealing observed for similarly processed 2 ohm-cm boron doped cells. Ion implanted furnace annealed 0.1 ohm-cm boron doped cells exhibited the lowest post-irradiation annealing temperatures after irradiation. The drastically lowered recovery temperature is attributed to the reduced oxygen and carbon content of the 0.1 ohm-cm cells. Analysis based on defect properties and annealing kinetics indicates that further reduction in annealing temperature is attainable with further reduction in the silicon's carbon and/or divacancy content after irradiation.

Weinberg, I.↗
NASA NTRS1982

Effects of processing and dopant on radiation damage removal in silicon solar cells

Gallium and boron doped silicon solar cells, processed by ion-implantation followed by either laser or furnace anneal were irradiated by 1 MeV electrons and their post-irradiation recovery by thermal annealing determined. During the post-irradiation anneal, gallium-doped cells prepared by both processes recovered more rapidly and exhibited none of the severe reverse annealing observed for similarly processed 2 ohm-cm boron doped cells. Ion-implanted furnace annealed 0.1 ohm-cm boron doped cells exhibited the lowest post-irradiation annealing temperatures (200 C) after irradiation to 5 x 10 to the 13th e(-)/sq cm. The drastically lowered recovery temperature is attributed to the reduced oxygen and carbon content of the 0.1 ohm-cm cells. Analysis based on defect properties and annealing kinetics indicates that further reduction in annealing temperature should be attainable with further reduction in the silicon's carbon and/or divacancy content after irradiation.

Weinberg, I.↗
NASA NTRS1994

Magnetic properties and magnetic hardening mechansim of Pt-Co-B alloys

The intrinsic coercivity is found to be maximized in the Pt42Co45B13 ternary alloy which is undercooled and rapidly solidified (quenched using a 70 m/s wheel speed after undercooling), and then annealed (800 C for 2400 min). The same alloy, processed at slower cooling rates and annealed in the same way, has a much larger scale microstructure and a much lower resulting magnetic coercivity. The microstructure which would optimize the coercitvity of this coercivity of this ternary alloy is a completely ordered L1(sub zero) Pt-Co matrix with a submicron magnetic single-domion Co-boride precipitate. The L1(sub zero) phase is highly anistropic magnetically while the Co-boride precipate is somewhat less so. Annealing treatments designed to produced single-domain Co-boride precipitates enhance the coercivity. This suggests that the refined microstructures is responsible for the high coercivities found in the rapidly solidified and annealed alloy. The magnetic domain wall thickness for a Co-boride precipitate is determined from both experimental observation and theoretical calculation in order to evaluate its influence on the coercivity of the alloy. The effects of the pinning of domain walls and the barrier to the nucleation of reverse domains on the coercivity are discussed. Both microstrucutral analysis and theoretical calculation indicate that the high coercivities in the Pt42Co45B13 alloy are due to the difficult nucleation of reverse magnetic domains.

Qiu, Ning↗
NASA NTRS1974

Study of recrystallization and devitrification of lunar glass

The technique of differential thermal analysis (DTA) was applied to the study of the Apollo 17 orange soil (74220,63) and the Apollo 16 glass coated anorthite (64455,21). These glasses show accentuated exotherms of strain relief in the annealing range which is indicative of rapid cooling. These are amenable to interpretation by comparison to the known history of synthetic glasses. Synthetic glasses were prepared whose similarity in behavior between the lunar glasses and their synthetic analogs is striking. Approximate rates of cooling of the lunar glasses were determined from comparative DTA of lunar and synthetic glasses and from the determination of the relation of strain relief in the annealing range to quench rate. At higher temperatures the glasses show exotherms of crystallization. The crystallization products associated with the exothermic reactions have been identified by X-ray diffraction and the surface morphologies developed by strain relief and crystallization have been characterized with scanning electron microscopy.

Ulrich, D. R.↗
NASA NTRS2022

Laser Patterning Assisted Devitrification and Domain Engineering of Amorphous and Nanocrystalline Alloys

We have investigated laser-patterning and devitrification as a novel method to realize emergent properties in modified regions at the ribbon surface consisting of periodic localized laser spots thermally treated under rapid heating and cooling conditions. Fe-based amorphous ribbons were annealed for systematically varied laser power. Extremely high heating and cooling rates on the order of 10(exp 8)-10(exp 10)K/s have been estimated by finite element analysis simulations. Observations suggest surface melting followed by rapid solidification fast enough to quench and form an amorphous structure upon cooling. Diffusion of heat occurs from the laser irradiated surface region so that a finite volume of material surrounding this region rises in temperature above the crystallization temperature relevant for conventional isothermal annealing experiments. The underlying mechanism of laser annealing and consequences of heat transients involved are discussed in terms of impacts upon micro/nanostructure, residual stresses, and magnetic domain structure surrounding the laser irradiated region. The study illustrates the potential to exploit spatially optimized phase transformations in a scalable manufacturing process of amorphous and nanocrystalline alloys to locally access otherwise inaccessible extreme heating and cooling rates.

Amorphous ribbons↗
NASA NTRS1979

Electron irradiation of tandem junction solar cells

The electrical behavior of 100 micron thick tandem junction solar cells manufactured by Texas Instruments was studied as a function of 1 MeV electron fluence, photon irradiation, and 60 C annealing. These cells are found to degrade rapidly with radiation, the most serious loss occurring in the blue end of the cell's spectral response. No photon degradation was found to occur, but the cells did anneal a small amount at 60 C.

Anspaugh, B. E.↗
NASA NTRS1990

The Bholghati (howardite) consortium - An overview

The Bholghati (howardite) has had a complex history. The consortium studies indicate that eucrite clasts show evidence of rapid crystallization followed by prolonged subsolidus annealing. Dark clasts are carbonaceous CM2 type. Bholghati bulk composition can be modeled by 55 percent eucritic, 45 percent diogenitic, and 3 percent dark clast components. The eucritic clasts show a LREE depleted pattern relative to HREEs, which is not typical of a normal eucrite. The LREE depletion requires two-stage melting from a chondritic source. The Bholghati evolution scenario is (1) early multiple magmatic events (4.53 Ga ago), producing eucrites and diogenites; (2) a metamorphic event (2-3 Ga ago) and prolonged subsolidus annealing; (3) fragmentation and low-temperature mixing of eucrites and diogenites; (4) low-velocity impact and admixing of carbonaceous material; (5) disruption of regolith and ejection of Bholghati 10-17 Ma ago; and (6) Bholghati fell on the earth in 1905.

Laul, J.-C.↗
NASA NTRS1988

Antiferromagnetism and superconductivity in oxygen-deficient YBa2Cu3O(x)

Positive-muon spin-rotation and -relaxation measurements of the oxygen-deficient perovskite YBa2Cu3O(x) have revealed local antiferromagnetic order for x = 6.0-6.4 with a Neel temperature TN that decreases rapidly with increasing oxygen content x. For slowly annealed samples with x = 6.35-6.5 the superconducting transition temperature Tc increases smoothly with x from 25 K at x = 6.348 to 60 K at x = 6.507. Two such samples with x = 6.348 and x = 6.400 appear to 'switch' from superconductivity to antiferromagnetic order at lower temperatures.

Brewer, J. H.↗