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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Electric-Drive Vehicle Power Electronics Thermal Management: Current Status, Challenges, and Future Directions

Effective thermal management of traction-drive power electronics is critical to the advancement of electric-drive vehicles and is necessary for increasing power density and improving reliability. Replacing traditional silicon devices with more efficient, higher temperature, higher voltage, and higher frequency wide-bandgap (WBG) devices will enable increased power density but will result in higher device heat fluxes. Compact packaging of high-temperature WBG devices near low-temperature-rated components creates thermal management challenges that need to be addressed for future power-dense systems. This paper summarizes the thermal performance of on-road automotive power electronics thermal management systems and provides thermal performance and pumping-power metrics for select vehicles. Thermal analyses reveal that the package/conduction resistance dominates the total thermal resistance (for existing automotive systems). We model advanced packaging concepts and compare the results with existing packaging designs to quantify their thermal performance enhancements. Double-side-cooled configurations that do not use thermal interface materials are package concepts predicted to provide a low junction-to-fluid thermal resistance (compared to current packages). Dielectric-fluid-cooled concepts enable a redesign of the package to reduce the package resistance, can be implemented in single- and two-phase cooling approaches, and allow for cooling of passive components (e.g., capacitors) and bus bars.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2022

Near-zero-field magnetoresistance measurements: A simple method to track atomic-scale defects involved in metal-oxide-semiconductor device reliability

We demonstrate the ability of a relatively new analytical technique, near-zero-field magnetoresistance (NZFMR), to track atomic-scale phenomena involved in the high-field stressing damage of fully processed Si metal-oxide-semiconductor field-effect transistors. We show that the technique is sensitive to both the Pb0 and Pb1 dangling bond centers and that the presence of both centers can be inferred through NZFMR via hyperfine interactions with the central 29Si atoms of the dangling bonds. The NZFMR results also provide evidence for the redistribution of mobile hydrogen atoms at the Si/SiO2 interface and also a potential change in the average dipolar coupling constant between electrons in neighboring defects. This work shows that NZFMR offers significant analytical power for studying technologically relevant semiconductor device reliability problems and has advantages in experimental simplicity over comparable techniques.

Moxim, Stephen J. (ORCID:0000000309659904)↗
DOE OSTI2021

Scenario adaptive disruption prediction study for next generation burning-plasma tokamaks

Next generation High Performance (HP) tokamaks risk damage from unmitigated disruptions at high current and power. Achieving reliable disruption prediction for a device's HP operation based on its Low Performance (LP) data is a key to its success. In this letter, through explorative data analysis and dedicated numerical experiments on multiple existing tokamaks, we demonstrate how the operational regimes of tokamaks can affect the power of a trained disruption predictor. First, our results suggest data-driven disruption predictors trained on abundant LP discharges work poorly on the HP regime of the same tokamak, which is a consequence of the distinct distributions of the tightly correlated signals related to disruptions in these two regimes. Second, we find that matching operational parameters among tokamaks strongly improves cross-machine accuracy which implies our model learns from the underlying scalings of dimensionless physics parameters like q 95 , β p and confirms the importance of these parameters in disruption physics and cross machine domain matching from the data-driven perspective. Finally, our results show in the absence of HP data from the target devices, the best predictivity of the HP regime for the target machine can be achieved by combining LP data from the target with HP data from other machines. Furthermore, these results provide a possible disruption predictor development strategy for next generation tokamaks, such as ITER and SPARC, and highlight the importance of developing baseline scenario discharges of future tokamaks on existing machines to collect more relevant disruptive data.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Heteroepitaxial growth of Ga2O3 on 4H-SiC by liquid-injection MOCVD for improved thermal management of Ga2O3 power devices

We report on the growth of monoclinic β- and orthorhombic κ-phase Ga2O3 thin films using liquid-injection metal-organic chemical vapor deposition on highly thermally conductive 4H-SiC substrates using gallium (III) acetylacetonate or tris(2,2,6,6-tetramethyl-3,5-heptanedionato) gallium (III). Both gallium precursors produced the β phase, while only the use of the latter led to growth of κ-Ga2O3. Regardless of the used precursor, best results for β-Ga2O3 were achieved at a growth temperature of 700 °C and O2 flows in the range of 600–800 SCCM. A relatively narrow growth window was found for κ-Ga2O3, and best results were achieved for growth temperatures of 600 °C and the O2 flow of 800 SCCM. While phase-pure β-Ga2O3 was prepared, κ-Ga2O3 showed various degrees of parasitic β phase inclusions. X-ray diffraction and transmission electron microscopy confirmed a highly textured structure of β- and κ-Ga2O3 layers resulting from the presence of multiple in-plane domain orientations. Thermal conductivities of 53 nm-thick β-Ga2O3 (2.13 + 0.29/−0.51 W/m K) and 45 nm-thick κ-Ga2O3 (1.23 + 0.22/−0.26 W/m K) were determined by transient thermoreflectance and implications for device applications were assessed. Presented results suggest great potential of heterointegration of Ga2O3 and SiC for improved thermal management and reliability of future Ga2O3-based high power devices.

Materials Science↗
DOE OSTI2023

1 kV GaN-on-Si Quasi-Vertical Schottky Rectifier

Here, this work demonstrates quasi-vertical GaN Schottky barrier diodes (SBDs) on 6-inch Si substrate with a breakdown voltage (BV) over 1 kV, the highest BV reported in vertical GaN-on-Si SBDs to date. The deep mesa inherently in quasi-vertical devices is leveraged to form a self-aligned edge termination, and the mesa sidewall is covered by the p-type nickel oxide (NiO) as a reduced surface field (RESURF) structure. This novel termination enables a parallel-plane junction electric field of 2.8 MV/cm. The device also shows low turn-on voltage of 0.5 V, and low specific on-resistance of 1.1 mΩ∙ cm 2 . Moreover, the device exhibits excellent overvoltage robustness under the continuous 800 V stress in the unclamped inductive switching test. These results show the good promise of the low-cost vertical GaN-on-Si power diodes.

42 ENGINEERING↗
DOE OSTI2020

Thermal Assessment and In-Situ Monitoring of Insulated Gate Bipolar Transistors in Power Electronic Modules: Preprint

Insulated gate bipolar transistor (IGBT) power modules are devices commonly used for switching of high voltages and currents. Usage and environmental conditions can cause these power modules to degrade over time, and this gradual process may eventually lead to catastrophic failure of the device. This degradation process may cause some early performance symptoms related to the state of health of the power module, making it possible to detect reliability degradation of the IGBT module. Testing can be used to accelerate this process, permitting a rapid determination of whether specific declines in device reliability can be characterized. In this study, thermal cycling was conducted on multiple power modules simultaneously in order to assess the effect of thermal cycling on the degradation of the power module. In-situ monitoring of temperature was performed from inside each power module using high temperature thermocouples. Device imaging and characterization was performed along with temperature data analysis, to assess failure modes and mechanisms within the power modules. While the experiment was aimed to assess the potential damage effects of thermal cycling on die attach, results indicated that wirebond degradation was the life limiting failure mechanism.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2020

Liquid-Cooled Heat Sink Optimization for Thermal Imbalance Mitigation in Wide-Bandgap Power Modules

Power semiconductor die layout in substrates used in power modules is generally optimized for minimum electrical parasitics (e.g., stray inductance) by considering the minimum spacing between dies for thermal decoupling. The layout assumes sufficient heat spreading and transfer from dies to the cooling structure. For module designs using a direct substrate cooling method, the base plate is removed, leading to a steady-state thermal asymmetry in the power module due to insufficient heat spreading/transfer. This causes significant temperature differences among the devices. Such unintentional thermal asymmetries can lead to undesirable asymmetries in power conversion among semiconductor devices, which impact reliability. This article proposes a thermal imbalance mitigation method that uses evolutionary optimized liquid-cooled heat sinks to improve the thermal loading among devices.

Sahu, Raj↗
DOE OSTI2023

Suppressing Carbon Incorporation in Metal–Organic Chemical Vapor Deposition GaN Using High‐Offcut‐Angled Substrates

Carbon (C) is a common impurity that acts as a compensator within GaN grown via metal–organic chemical vapor deposition (MOCVD). Reducing C in GaN will help reduce the compensation level and provide a route to achieve GaN with reliably low effective doping for high-power device applications. GaN grown with fast growth rates on bulk GaN with various offcut angles via conventional-MOCVD (C-MOCVD) and laser-assisted MOCVD (LA-MOCVD) is compared and analyzed. C-incorporation effects are compared through quantitative secondary-ion mass spectroscopy analysis in GaN grown on GaN substrate with offcut angles of 4° and 0.3° toward m-plane over a wide range of growth rates by C-MOCVD and LA-MOCVD. For both growth techniques investigated, a significant reduction in C-incorporation is observed when a high-offcut-angle (4°) substrate is used as compared to a lower-offcut-angle (0.3°) substrate. Furthermore, with C-MOCVD, at the fastest growth condition investigated (17.26 μm h −1 at 0.3°-offcut, 15.25 μm h −1 at 4°-offcut), a reduction in [C] by 21.2X is observed with an increase in the offcut angle from 0.3° to 4°. A 82.6X reduction in [C] is observed with the similar fast growth condition via LA-MOCVD on GaN with 4° offcut angle (9.78 μm h −1 ) as compared to C-MOCVD at 0.3° offcut angle (17.26 μm h −1 ).

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Envisioning the Future Renewable and Resilient Energy Grids—A Power Grid Revolution Enabled by Renewables, Energy Storage, and Energy Electronics

Today’s power grids are facing tremendous challenges because of the ever-increasing power demand, system complexity, infrastructure cost, knowledge base, and policy and regulatory issues to achieve supply–demand power balance and resiliency with respect to more frequent extreme weather events and cyberattacks. It is particularly challenging when the transition toward 100% intermittent renewable energy sources is considered. Many countries are calling for building up more transmission and distribution lines to increase power delivery capacities. This article is an attempt to answer two urgent questions: Is more transmission and distribution infrastructure really needed to meet the increasing power demand? What kind of future grid infrastructure should we envision and build? This article attempts to answer these questions and proposes the concept of community-centric asynchronous renewable and resilient energy grids. By clearly differentiating the concepts of grid resilience and reliability, the importance of building resilient power electronics’ devices and robust system-level control algorithms to achieve 100% renewable energy integrated resilient grids is presented. To identify the shortcomings and propose advancements, power electronics’ technologies are categorized using the proposed concepts of natural source frequencies (NSf), energy storage, direct energy conversion/control and fault protection (DeCaFp), and high-efficiency energy consumption and buffering (heECaB) technology. The ability of networked microgrids to greatly reduce power outages and power system restoration time is demonstrated by leveraging robust decentralized and centralized control algorithms, identified through a comprehensive literature review. Future research areas are proposed to further enhance grid stability, controllability, cybersecurity, and protection against faults in the presence of 100% renewable sources by leveraging the advanced capabilities of NSf, DeCaFp, and heECaB devices and system-level control algorithms.

14 SOLAR ENERGY↗
DOE OSTI2021

Critical Interference Mechanisms for Marine Renewable Energy-powered Ocean Observing Platforms

Marine renewable energy devices, such as wave energy converters or tidal turbines, not only have the potential to provide clean, reliable power to the grid but may also offer new opportunities for ocean exploration by providing power for oceanographic sensors where other sources cannot. However, an important consideration in making this vision a reality is understanding whether the marine energy devices may interfere with oceanographic measurements. Interference may occur through several pathways, including sound produced by the device and the motion of the device itself. In this report, we provide an overview of interference pathways and their implications before exploring two use cases for marine energy-powered ocean observing platforms: a tidal-powered passive acoustic monitoring system and wave-powered wave measurement buoys. For each use case, we review the relevant literature and underlying physics of the systems as they are relevant to the desired measurements before making recommendations for design of such systems.

16 TIDAL AND WAVE POWER↗
DOE OSTI2021

A perspective on the electro-thermal co-design of ultra-wide bandgap lateral devices

Fundamental research and development of ultra-wide bandgap (UWBG) semiconductor devices are under way to realize next-generation power conversion and wireless communication systems. Devices based on aluminum gallium nitride (AlxGa1-xN, x is the Al composition), ..beta..-phase gallium oxide (..beta..-Ga2O3), and diamond give promise to the development of power switching devices and radio frequency power amplifiers with higher performance and efficiency than commercial wide bandgap semiconductor devices based on gallium nitride (GaN) and silicon carbide (SiC). However, one of the most critical challenges for the successful deployment of UWBG device technologies is to overcome adverse thermal effects that impact the device performance and reliability. Overheating of UWBG devices originates from the projected high power density operation and poor intrinsic thermal properties of AlxGa1-xN and ..beta..-Ga2O3. This Perspective delineates the need and process for the "electro-thermal co-design" of laterally configured UWBG electronic devices and provides a comprehensive review of current state-of-the-art thermal characterization methods, device thermal modeling practices, and both device- and package-level thermal management solutions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

RaDIATE Collaboration for Material Studies

In the recent past, major accelerator facilities have been limited in beam power not by their accelerators, but by the beam intercepting device survivability. As next-generation accelerator target facilities (High Energy Physics, Spallation Sources, …) become increasingly more powerful and intense, high power target systems face key technical challenges. Beam-intercepting devices such as beam windows and secondary particle-production targets are continuously bombarded by high-energy high-intensity pulsed proton beams to produce secondary particles. Energy deposition from the primary beam induces near instantaneous heating (thermal shock) and microstructural changes (radiation damage) in the beam-intercepting materials. Both thermal shock and radiation damage ultimately degrade the performance and lifetime of targets and have been identified as the leading cross-cutting challenges of high-power target facilities. In order to operate reliable beam-intercepting devices in the framework of energy and intensity increase for next generation accelerators, the RaDIATE collaboration (Radiation Damage In Accelerator Target Environment) managed by Fermilab, brings together existing expertise in nuclear material and accelerator targets from 20 international institutions to execute a coordinated strategy for high power targetry R&D. This collaboration is generating new and useful materials data for application within the accelerator and the fission/fusion communities. I will give an overview of the RaDIATE R&D program and the achievement in the last few years on material studies in support of High Power Targetry development, including results obtained from irradiation test, development of novel materials and the prospective towards future irradiation campaign. A highlight will be given to the results in collaboration with our colleagues from J-PARC.

Pellemoine, Frederique↗
DOE OSTI2023

Understanding Impacts of Frequency Calculations on Underfrequency Load Shedding

Power system fundamental frequency-dependent protection decisions and control decisions are increasingly common in the distribution system space. Understanding the algorithms used in frequency measurements is critical to understanding the decisions made by the many intelligent electronic devices in the power system. These decisions are critically important for reliability analysis for interconnected power systems as they bear directly on resource planning to mitigate under-frequency conditions that would result in under-frequency load shedding (UFLS). This work aims to improve the understanding of frequency measurement algorithms, evaluate the intelligent electronic devices that use frequency measurements for decision making, and understand the algorithms' direct impact on frequency related decision making. First, this work presents background information on the use of frequency measurements in protection logic, specifically UFLS. Second, the paper presents a relay hardware evaluation test bed used to detect and protect systems from under-frequency events. Finally, the paper presents the dynamic events used to evaluate commercially available, off-the-shelf relay equipment and the results from the relay evaluation.

COMTRADE↗
DOE OSTI2024

Power Electronics Materials and Bonded Interfaces - Reliability and Lifetime

The need for reliable bonded interface materials is critical to realize the performance benefits of wide-bandgap devices in power electronic modules, especially in operating temperatures greater than 150 degrees Celsius. In this paper, we investigate the thermomechanical performance of sintered copper (Cu) as a large-area attachment, bonded between Cu baseplates and active-metal-bonded substrates, under accelerated thermal shock (-40 degrees Celsius to 200 degrees Celsius) conditions. In the fabrication phase of the samples, we used different stencil patterns and found out that the grid and stripe patterns resulted in a better outgassing of the residual organics during the sintering process, thereby ensuring a substantially improved bond quality than a full-area print. The paste consisted of Cu microflakes and we performed sintering using a Budatec SP300 sintering press at 275 degrees Celsius with 15 MPa of bonding pressure for 5 minutes in a nitrogen atmosphere. Under accelerated experiments, we monitored the degradation of the sintered Cu bond in the samples through C-mode scanning acoustic microscope (C-SAM) images. To quantify the defect percentage in C-SAM images, we investigated image denoising techniques to exclude the pattern prints. Finally, we cross-sectioned a sample and obtained digital microscope images, which revealed adhesive fracture as the dominant failure mechanism.

ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2024

Reliable operation of Cr 2 O 3 :Mg/ $β$-Ga 2 O 3 p–n heterojunction diodes at 600 °C

Beta gallium oxide (β-Ga 2 O 3 )-based semiconductor heterojunctions have recently demonstrated improved performance at high voltages and elevated temperatures and are, thus, promising for applications in power electronic devices and harsh environment sensors. However, the long-term reliability of these ultra-wideband gap (UWBG) semiconductor devices remains barely addressed and may be strongly influenced by chemical reactions at the p–n heterojunction interface. Here, we experimentally demonstrate operation and evaluate the reliability of Cr 2 O 3 :Mg/β-Ga 2 O 3 p–n heterojunction diodes during extended operation at 600 °C, as well as after 30 repeated cycles between 25 and 550 °C. The calculated pO 2 -temperature phase stability diagram of the Ga-Cr-O material system predicts that Ga 2 O 3 and Cr 2 O 3 should remain thermodynamically stable in contact with each other over a wide range of oxygen pressures and operating temperatures. The fabricated Cr 2 O 3 :Mg/β-Ga 2 O 3 p–n heterojunction diodes show room-temperature on/off ratios >104 at ±5 V and a breakdown voltage (V Br ) of -390 V. The leakage current increases with increasing temperature up to 600 °C, which is attributed to Poole–Frenkel emission with a trap barrier height of 0.19 eV. Over the course of a 140-h thermal soak at 600 °C, both the device turn-on voltage and on-state resistance increase from 1.08 V and 5.34 mΩ cm 2 to 1.59 V and 7.1 mΩ cm 2 , respectively. This increase is attributed to the accumulation of Mg and MgO at the Cr 2 O 3 /Ga 2 O 3 interface as observed from the time-of-flight secondary ion mass spectrometry analysis. These findings inform future design strategies of UWBG semiconductor devices for harsh environment operation and underscore the need for further reliability assessments for β-Ga 2 O 3 -based devices.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Thermally induced PtOx interfacial layer enhances stability of Pt/β-Ga2O3 vertical Schottky diodes

This study investigates the long-term stability of Pt/β-Ga2O3 field-plated Schottky barrier diodes at high temperatures, with extended thermal cycling and soaking stress. The device characteristics reveal a strong dependence on operating temperature, leading to an ON/OFF current ratio of ∼10× at ±3 V and 600 °C. Extensive thermal cycling (25 cycles over 100 h) between room temperature and 350 °C shows that leakage currents stabilize after the initial ten cycles. This stabilization is likely due to the formation of a thin PtOx layer at the Pt/β-Ga2O3 interface, as confirmed by high-resolution scanning transmission electron microscopy. Further exposure to a constant 350 °C environment for 10 h reveals a slight increase in the leakage current from 10−7 to 10−6 A at −5 V and degradation of the forward current, due to potential thermodynamic instability of the Ohmic contacts. This study provides insights into the changes in the Pt/β-Ga2O3 diode performance with thermal stress, offering a basis for predicting the device’s operational reliability at high temperatures for sensing and power applications.

08 HYDROGEN↗
DOE OSTI2020

Design Considerations for High-Voltage Insulated Gate Drive Power Supply for 10-kV SiC MOSFET Applied in Medium-Voltage Converter

High-performance gate drive power supply (GDPS) plays a crucial role in ensuring the reliability and safety of the gate driver for power semiconductor devices. This article focuses on the design of a high-voltage-insulated GDPS for the 10-kV silicon carbide MOSFET in medium-voltage (MV) application. Design considerations, including insulation scheme, high-voltage-insulated transformer design, and load voltage regulation scheme, are proposed. In addition, the performance of the secondary-side-regulated (SSR) GDPS and that of the primary-side-regulated (PSR) GDPS are compared for several aspects, including interwinding capacitance, load voltage regulation rate, conversion efficiency, and hardware complexity. Finally, an SSR GDPS and a PSR GDPS, with an insulation voltage of 20 kV, are built in the lab. Furthermore, the test results demonstrate that the PSR GDPS is more preferable because of lower interwinding capacitance, lower load voltage regulation rate, higher conversion efficiency, and simpler control circuit.

42 ENGINEERING↗
DOE OSTI2023

Distributed Energy Resource (DER) Reliability for Backup Electric Power Systems

Hospitals, emergency services, military bases, ports, airports, industries, commercial facilities, and others rely on backup power systems to provide electricity for their critical loads during grid outages. The purpose of this report it to provide accurate reliability information on commonly deployed distributed energy resources (DERs) to improve quantitative estimates for the reliability of these backup power systems during a grid outage. A backup power system consists of DERs, an electric distribution system with its associated switches and other devices, and mechanisms to control and manage the flow of electricity. Too often, facilities and campuses fail to properly quantify the reliability of their backup power systems. DERs are assumed to be 100% reliable, with the only concern being the availability of fuel. Such assumptions can lead to gross errors in the backup system's reliability estimates, particularly for long-duration outages. This report provides a set of estimates for reliability of emergency diesel generators (EDGs), natural gas prime generators and combined heat and power (CHP) prime movers, solar photovoltaics (PV), wind turbines, and Li-ion battery energy storage systems (BESS). The estimates are derived from empirical data when available and supplemented by modeling results when needed. These reliability estimates are for the DERs ability to provide power during a grid outage, ranging from an hour to 2 weeks.

14 SOLAR ENERGY↗