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DOE OSTI2011

Kinetics of nickel silicide growth in silicon nanowires: From linear to square root growth

The common practice for nickel silicide formation in silicon nanowires (SiNWs) relies on axial growth of silicide along the wire that is initiated from nickel reservoirs at the source and drain contacts. In the present work the silicide intrusions were studied for various parameters including wire diameter (25-50 nm), annealing time (15-120 s), annealing temperature (300-440 deg. C), and the quality of the initial Ni/Si interface. The silicide formation was investigated by high-resolution scanning electron microscopy, high-resolution transmission electron microscopy (TEM), and atomic force microscopy. The main part of the intrusion formed at 420 deg. C consists of monosilicide NiSi, as was confirmed by energy dispersive spectroscopy STEM, selected area diffraction TEM, and electrical resistance measurements of fully silicided SiNWs. The kinetics of nickel silicide axial growth in the SiNWs was analyzed in the framework of a diffusion model through constrictions. The model calculates the time dependence of the intrusion length, L, and predicts crossover from linear to square root time dependency for different wire parameters, as confirmed by the experimental data.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2022

Stability, metallicity, and magnetism in niobium silicide nanofilms

Modern superconducting qubits based on two-dimensional (2D) transmons typically involve the growth of Nb thin films on high-resistivity Si substrates. Since imperfections at the Nb-Si heterointerface have been implicated as a source of two-level systems that limit quantum coherence times, detailed characterization and understanding of niobium silicide interfacial layers are critical to improving superconducting qubit technology. While bulk binary intermetallic niobium silicide phases are well understood, the thermodynamic phase stability and properties of ultrathin niobium silicides, such as those found at the Nb-Si heterointerface in 2D transmons, have not yet been explored. Here, we report finite-sized effects for ultrathin niobium silicide films using density functional theory calculations and predict nanoscale stabilization of Nb 6 Si 5 over the bulk α-Nb 5 Si 3 phase. This result is consistent with our experimental observations of a niobium silicide interfacial layer between a sputtered Nb thin film and the underlying Si substrate. Furthermore, our calculations show that Nb 6 Si 5 nanofilms are nonmagnetic, making them superior to nanofilms of α-Nb 5 Si 3 that exhibit antiferromagnetic correlations detrimental to long coherence times in superconducting qubits. Furthermore, by providing atomic-scale insight into niobium silicide nanofilms, this paper can help guide ongoing efforts to optimize Nb-Si heterointerfaces for long coherence times in superconducting qubits.

36 MATERIALS SCIENCE↗

DOE OSTI2018

Development of Self-Healing Zirconium-Silicide Coatings for Improved Performance Zirconium-Alloy Fuel Cladding

Zirconium-alloy fuel claddings have been used successfully in Light Water Reactors (LWR) for over four decades. However, under high temperature accident conditions, zirconium-alloys fuel claddings exhibit profuse exothermic oxidation accompanied by release of hydrogen gas due to the reaction with water/steam. Additionally, the ZrO 2 layer can undergo monoclinic to tetragonal to cubic phase transformations at high temperatures which can induce stresses and cracking. These events were unfortunately borne out in the Fukushima-Daiichi accident in in Japan in 2011. In reaction to such accident, protective oxidation-resistant coatings for zirconium-alloy fuel claddings has been extensively investigated to enhance safety margins in accidents as well as fuel performance under normal operation conditions. Such surface modification could also beneficially affect fuel rod heat transfer characteristics. Zirconium-silicide, a candidate coating material, is particularly attractive because zirconium-silicide coating is expected to bond strongly to zirconium-alloy substrate. Intermetallic compound phases of zirconium-silicide have high melting points and oxidation of zirconium silicide produces highly corrosion resistant glassy zircon (ZrSiO 4 ) and silica (SiO 2 ) which possessing self-healing qualities. Given the long-term goal of developing such coatings for use with nuclear reactor fuel cladding, this work describes results of oxidation and corrosion behavior of bulk zirconium-silicide and fabrication of zirconium-silicide coatings on zirconium-alloy test flats, tube configurations, and SiC test flats. In addition, boiling heat transfer of these modified surfaces (including ZrSi 2 coating) during clad quenching experiments is discussed in detail.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗

DOE OSTI2019

Chemistry of Electrolyte Reduction on Lithium Silicide

Silicon anodes are promising for next-generation lithium-ion batteries due to high theoretical capacity. However, their performance and lifetime are currently limited by continuous electrolyte reduction and solid-electrolyte interphase (SEI) formation. Thus, SEI studies are important but often complicated due to the rough morphology of samples, buried interfaces, and the presence of binders. Here, we demonstrate the chemical origin of SEI formation by electrolyte reduction on lithium silicide thin films, synthesized by diffusion of pure evaporated lithium into smooth sputtered silicon. These model samples allowed for accurate estimation of irreversible capacity loss due to electrolyte reduction and for precise characterization of the resulting SEI by vibrational and photoelectron spectroscopies. Spectroscopic characterizations showed clear evidence that lithium silicide reduced electrolyte directly upon contact. Negligible first-cycle irreversible capacity loss was observed for the lithium silicide compared to silicon, indicating that the decomposition product of electrolyte on lithium silicide is able to stop further electrolyte reduction to a large extent. Fluoro-ethylene carbonate was shown to significantly affect the chemistry of electrolyte reduction on lithium silicide and subsequent cycling performance. The results of this basic study reveal the chemistry occurring at the interface of the lithium silicide and electrolyte and help in understanding the limited calendar lifetime of Li-ion batteries with Si anodes.

25 ENERGY STORAGE↗

DOE OSTI2018

Silicidation of Tantalum Carbide and Zirconium Carbide Powders in a Gaseous SiO Environment

Tantalum carbide and zirconium carbide powders have been silicided in a gaseous SiO atmosphere at 1400°C. X-ray diffraction and energy dispersive X-ray microanalysis results demonstrate that the silicidation products are Ta{sub 5}Si{sub 3} and TaSi{sub 2} in the case of TaC and ZrSi in the case of ZrC. The silicidation rate has been shown to influence the percentages of these silicides in the reaction products. The degree of silicidation reached in this study is about 20% in the case of TaC and about 16% in the case of ZrC.

36 MATERIALS SCIENCE↗

DOE OSTI2010

Exploitation of a self-limiting process for reproducible formation of ultrathin Ni{sub 1-x}Pt{sub x} silicide films

This letter reports on a process scheme to obtain highly reproducible Ni{sub 1-x}Pt{sub x} silicide films of 3-6 nm thickness formed on a Si(100) substrate. Such ultrathin silicide films are readily attained by sputter deposition of metal films, metal stripping in wet chemicals, and final silicidation by rapid thermal processing. This process sequence warrants an invariant amount of metal intermixed with Si in the substrate surface region independent of the initial metal thickness, thereby leading to a self-limiting formation of ultrathin silicide films. The crystallographic structure, thickness, uniformity, and morphological stability of the final silicide films depend sensitively on the initial Pt fraction.

36 MATERIALS SCIENCE↗

DOE OSTI2013

Local solid phase growth of few-layer graphene on silicon carbide from nickel silicide supersaturated with carbon

Patterned few-layer graphene (FLG) films were obtained by local solid phase growth from nickel silicide supersaturated with carbon, following a fabrication scheme, which allows the formation of self-aligned ohmic contacts on FLG and is compatible with conventional SiC device processing methods. The process was realised by the deposition and patterning of thin Ni films on semi-insulating 6H-SiC wafers followed by annealing and the selective removal of the resulting nickel silicide by wet chemistry. Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) were used to confirm both the formation and subsequent removal of nickel silicide. The impact of process parameters such as the thickness of the initial Ni layer, annealing temperature, and cooling rates on the FLG films was assessed by Raman spectroscopy, XPS, and atomic force microscopy. The thickness of the final FLG film estimated from the Raman spectra varied from 1 to 4 monolayers for initial Ni layers between 3 and 20 nm thick. Self-aligned contacts were formed on these patterned films by contact photolithography and wet etching of nickel silicide, which enabled the fabrication of test structures to measure the carrier concentration and mobility in the FLG films. A simple model of diffusion-driven solid phase chemical reaction was used to explain formation of the FLG film at the interface between nickel silicide and silicon carbide.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2014

Near surface silicide formation after off-normal Fe-implantation of Si(001) surfaces

We report on formation of non-crystalline Fe-silicides of various stoichiometries below the amorphized surface of crystalline Si(001) after irradiation with 5 keV Fe{sup +} ions under off-normal incidence. We examined samples prepared with ion fluences of 0.1 × 10{sup 17} and 5 × 10{sup 17} ions cm{sup −2} exhibiting a flat and patterned surface morphology, respectively. Whereas the iron silicides are found across the whole surface of the flat sample, they are concentrated at the top of ridges at the rippled surface. A depth resolved analysis of the chemical states of Si and Fe atoms in the near surface region was performed by combining X-ray photoelectron spectroscopy and X-ray absorption spectroscopy (XAS) using synchrotron radiation. The chemical shift and the line shape of the Si 2p core levels and valence bands were measured and associated with the formation of silicide bonds of different stoichiometric composition changing from an Fe-rich silicides (Fe{sub 3}Si) close to the surface into a Si-rich silicide (FeSi{sub 2}) towards the inner interface to the Si(001) substrate. This finding is supported by XAS analysis at the Fe K-edge which shows changes of the chemical environment and the near order atomic coordination of the Fe atoms in the region close to surface. Because a similar Fe depth profile has been found for samples co-sputtered with Fe during Kr{sup +} ion irradiation, our results suggest the importance of chemically bonded Fe in the surface region for the process of ripple formation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2011

Exploitation of a Self-limiting Process for Reproducible Formation of Ultrathin Ni(1-x)Pt(x) Silicide Films

36 MATERIALS SCIENCE↗

DOE OSTI2023

Direct Transformation of SiH 4 to a Molecular L(H) 2 Co=Si=Co(H) 2 L Silicide Complex

The synthesis of bimetallic molecular silicide complexes is reported, based on the use of multiple Si–H bond activations in SiH 4 at the metal centers of 14-electron LCo I fragments (L = Tp", HB(3,5-diisopropylpyrazolyl) 3 – ; [BP 2 tBu Pz], PhB(CH 2 P t Bu 2 ) 2 (pyrazolyl)). Upon exposure of (Tp"Co) 2 (μ-N 2 ) (1) to SiH 4 , a mixture of (Tp"Co) 2 (μ-H) (2) and (Tp"Co) 2 (μ-H) 2 (3) was formed and no evidence for Si–H oxidative addition products was observed. In contrast, [BP 2 tBu Pz]-supported Co complexes led to Si–H oxidative additions with the generation of silylene and silicide complexes as products. Notably, the reaction of ([BP 2 tBu Pz]Co) 2 (μ-N 2 ) (5) with SiH 4 gave the dicobalt silicide complex [BP 2 tBu Pz](H) 2 Co=Si=Co(H) 2 [BP 2 tBu Pz] (8) in high yield, representing the first direct route to a symmetrical bimetallic silicide. Here, the effect of the [BP 2 tBu Pz] ligand on Co–Si bonding in 7 and 8 was explored by analysis of solid-state molecular structures and density functional theory (DFT) investigations. Upon exposure to CO or DMAP (DMAP = 4-dimethylaminopyridine), 8 converted to the corresponding [BP 2 tBu Pz]Co(L) x adducts (L = CO, x = 2; L = DMAP, x = 1) with concomitant loss of SiH 4 , despite the lack of significant Si–H interactions in the starting complex. On heating to 60 °C, 8 underwent reaction with MeCl to produce small quantities of Me x SiH 4–x (x = 1–3), demonstrating functionalization of the μ-silicon atom in a molecular silicide to form organosilanes.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

NASA NTRS1982

Surface morphology of erbium silicide

The surface of rare-earth silicides (Er, Tb, etc.), formed by the reaction of thin-film metal layers with a silicon substrate, is typically dominated by deep penetrating, regularly shaped pits. These pits may have a detrimental effect on the electronic performance of low Schottky barrier height diodes utilizing such silicides on n-type Si. This study suggests that contamination at the metal-Si or silicide-Si interface is the primary cause of surface pitting. Surface pits may be reduced in density or eliminated entirely through either the use of Si substrate surfaces prepared under ultrahigh vacuum conditions prior to metal deposition and silicide formation or by means of ion irradiation techniques. Silicide layers formed by these techniques possess an almost planar morphology.

Lau, S. S.↗

DOE OSTI2016

The Ce-Ni-Si system as a representative of the rare earth-Ni-Si family: Isothermal section and new rare-earth nickel silicides

The Ce-Ni-Si system has been investigated at 870/1070 K by X-ray and microprobe analyses. The existence of the known compounds, i.e.: Ce{sub 2}Ni{sub 15.8}Si{sub 1.2} (Th{sub 2}Ni{sub 17}-type), Ce{sub 2}Ni{sub 15-14}Si{sub 2-3} (Th{sub 2}Zn{sub 17}-type), CeNi{sub 8.6}Si{sub 2.4} (BaCd{sub 11}-type), CeNi{sub 8.8}Si{sub 4.2} (LaCo{sub 9}Si{sub 4}-type), CeNi{sub 6}Si{sub 6} (CeNi{sub 6}Si{sub 6}-type), CeNi{sub 5}Si{sub 1-0.3} (TbCu{sub 7}-type), CeNi{sub 4}Si (YNi{sub 4}Si-type), CeNi{sub 2}Si{sub 2} (CeGa{sub 2}Al{sub 2}-type), Ce{sub 2}Ni{sub 3}Si{sub 5} (U{sub 2}Co{sub 3}Si{sub 5}-type), Ce{sub 3}Ni{sub 6}Si{sub 2} (Ce{sub 3}Ni{sub 6}Si{sub 2}-type), Ce{sub 3}Ni{sub 4}Si{sub 4} (U{sub 3}Ni{sub 4}Si{sub 4}-type), CeNiSi{sub 2} (CeNiSi{sub 2}-type), ~CeNi{sub 1.3}Si{sub 0.7} (unknown type structure), Ce{sub 6}Ni{sub 7}Si{sub 4} (Pr{sub 6}Ni{sub 7}Si{sub 4}-type), CeNiSi (LaPtSi-type), CeNi{sub 0.8-0.3}Si{sub 1.2-1.7} (AlB{sub 2}-type), ~Ce{sub 2}Ni{sub 2}Si (unknown type structure), ~Ce{sub 4.5}Ni{sub 3.5}Si{sub 2} (unknown type structure), Ce{sub 15}Ni{sub 7}Si{sub 10} (Pr{sub 15}Ni{sub 7}Si{sub 10}-type), Ce{sub 5}Ni{sub 1.85}Si{sub 3} (Ce{sub 5}Ni{sub 1.85}Si{sub 3}-type), Ce{sub 6}Ni{sub 1.4}Si{sub 3.4} (Ce{sub 6}Ni{sub 1.67}Si{sub 3}-type), Ce{sub 7}Ni{sub 2}Si{sub 5} (Ce{sub 7}Ni{sub 2}Si{sub 5}-type) and Ce{sub 3}NiSi{sub 3} (Y{sub 3}NiSi{sub 3}-type) has been confirmed in this section. Moreover, the type structure has been determined for ~Ce{sub 2}Ni{sub 2}Si (Mo{sub 2}NiB{sub 2}-type Ce{sub 2}Ni{sub 2.5}Si{sub 0.5}) and ~Ce{sub 4.5}Ni{sub 3.5}Si{sub 2} (W{sub 3}CoB{sub 3}-type Ce{sub 3}Ni{sub 3-2.7}Si{sub 1-1.3}) and new ternary phases Ce{sub 2}Ni{sub 6.25}Si{sub 0.75} (Gd{sub 2}Co{sub 7}-type), CeNi{sub 7-7.6}Si{sub 6-5.4} (GdNi{sub 7}Si{sub 6}-type) and ~Ce{sub 27}Ni{sub 42}Si{sub 31} (unknown type structure) have been identified in this system. Quasi-binary phases, solid solutions, were detected at 870/1070 K for CeNi{sub 5}, CeNi{sub 3} and CeSi{sub 2}; while no appreciable solubility was observed for the other binary compounds of the Ce-Ni-Si system. As a prolongation of Rare Earth-Ni-Si system’s isostructural rows, LaNi{sub 7}Si{sub 6} and YNi{sub 6.6}Si{sub 6.1} (GdNi{sub 7}Si{sub 6}-type), ScNi{sub 6}Si{sub 6} (YCo{sub 6}Ge{sub 6}-type), NdNi{sub 6}Si{sub 6} (YNi{sub 6}Si{sub 6}-type), (Tb, Ho){sub 2}Ni{sub 15}Si{sub 2} (Th{sub 2}Zn{sub 17}-type), Nd{sub 2}Ni{sub 2.3}Si{sub 0.7} and Sm{sub 2}Ni{sub 2.2}Si{sub 0.8} (Mo{sub 2}NiB{sub 2}-type), Nd{sub 3}Ni{sub 2.55}Si{sub 1.45} (W{sub 3}CoB{sub 3}-type) and (Tb, Dy){sub 7}Ni{sub 50}Si{sub 19} (Y{sub 7}Ni{sub 49}Si{sub 20}-type) compounds were synthesized and investigated. Magnetic properties of the CeNi{sub 6}Si{sub 6}, CeNi{sub 7}Si{sub 6}, CeNi{sub 8.8}Si{sub 4.2}, Ce{sub 6}Ni{sub 7}Si{sub 4}, CeNi{sub 5}Si, Ce{sub 2}Ni{sub 2.5}Si{sub 0.5}, Nd{sub 2}Ni{sub 2.3}Si{sub 0.7} and Dy{sub 7}Ni{sub 50}Si{sub 19} compounds have also been investigated and are presented here. - Highlights: • Ce-Ni-Si isothermal section was obtained at 870/1070 K. • Twenty one known ternary cerium nickel silicides were confirmed in Ce-Ni-Si. • Five new cerium nickel silicides were detected in Ce-Ni-Si. • Eleven new rare earth nickel silicides were detected in R-Ni-Si. • Magnetic properties of eight rare earth nickel silicides were investigated.

36 MATERIALS SCIENCE↗

DOE OSTI2011

{sup 45}Sc Solid State NMR studies of the silicides ScTSi (T=Co, Ni, Cu, Ru, Rh, Pd, Ir, Pt)

The silicides ScTSi (T=Fe, Co, Ni, Cu, Ru, Rh, Pd, Ir, Pt) were synthesized by arc-melting and characterized by X-ray powder diffraction. The structures of ScCoSi, ScRuSi, ScPdSi, and ScIrSi were refined from single crystal diffractometer data. These silicides crystallize with the TiNiSi type, space group Pnma. No systematic influences of the {sup 45}Sc isotropic magnetic shift and nuclear electric quadrupolar coupling parameters on various structural distortion parameters calculated from the crystal structure data can be detected. {sup 45}Sc MAS-NMR data suggest systematic trends in the local electronic structure probed by the scandium atoms: both the electric field gradients and the isotropic magnetic shifts relative to a 0.2 M aqueous Sc(NO{sub 3}){sub 3} solution decrease with increasing valence electron concentration and within each T group the isotropic magnetic shift decreases monotonically with increasing atomic number. The {sup 45}Sc nuclear electric quadrupolar coupling constants are generally well reproduced by quantum mechanical electric field gradient calculations using the WIEN2k code. Highlights: Black-Right-Pointing-Pointer Arc-melting synthesis of silicides ScTSi. Black-Right-Pointing-Pointer Single crystal X-ray data of ScCoSi, ScRuSi, ScPdSi, and ScIrSi. Black-Right-Pointing-Pointer {sup 45}Sc solid state NMR of silicides ScTSi.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2017

Impact of laser anneal on NiPt silicide texture and chemical composition

We have combined synchrotron X-ray pole figure measurements and transmission electron microscopy (TEM) nano-beam diffraction to study the impact of millisecond laser anneal on the texture and microstructure of NiPt silicide thin films. The powerful use of nano-beam diffraction in plan-view geometry allows here for both a mapping of grain orientation and intra-grain measurements even if these crystalline grains become very small. With this unique combination of local and large-scale probes, we find that silicide formation on n and p doped substrates using laser annealing results in smaller grains compared with the films processed using standard rapid thermal annealing. The laser annealed samples also result in grains that are more epitaxially oriented with respect to the Si substrate. For n-type substrate, the film is dominated by (020) and (013) oriented fibers with significant levels of intra-grain bending (transrotation) observed in both types of grains. For p-type substrates, mostly epitaxially aligned grains are detected. TEM coupled with energy-dispersive X-ray analysis was also used to study the elemental distribution in the silicide samples. Furthermore, we confirm that laser anneal leads to a larger accumulation of platinum at the silicide-substrate interface and modifies the distribution of dopants throughout the film.

36 MATERIALS SCIENCE↗

DOE OSTI2018

Fabrication and Thermoelectric Characterization of Transition Metal Silicide-Based Composite Thermocouples

Metal silicide-based thermocouples were fabricated by screen printing thick films of the powder compositions onto alumina tapes followed by lamination and sintering processes. The legs of the embedded thermocouples were composed of composite compositions consisting of MoSi2, WSi2, ZrSi2, or TaSi2 with an additional 10 vol % Al2O3 to form a silicide–oxide composite. The structural and high-temperature thermoelectric properties of the composite thermocouples were examined using X-ray diffraction, scanning electron microscopy and a typical hot–cold junction measurement technique. MoSi2-Al2O3 and WSi2-Al2O3 composites exhibited higher intrinsic Seebeck coefficients (22.2–30.0 µV/K) at high-temperature gradients, which were calculated from the thermoelectric data of composite//Pt thermocouples. The composite thermocouples generated a thermoelectric voltage up to 16.0 mV at high-temperature gradients. The MoSi2-Al2O3//TaSi2-Al2O3 thermocouple displayed a better performance at high temperatures. The Seebeck coefficients of composite thermocouples were found to range between 20.9 and 73.0 µV/K at a temperature gradient of 1000 °C. There was a significant difference between the calculated and measured Seebeck coefficients of these thermocouples, which indicated the significant influence of secondary silicide phases (e.g., Mo5Si3, Ta5Si3) and possible local compositional changes on the overall thermoelectric response. The thermoelectric performance, high sensitivity, and cost efficiency of metal silicide–alumina ceramic composite thermocouples showed promise for high-temperature and harsh-environment sensing applications.

47 OTHER INSTRUMENTATION↗

DOE OSTI2018

First-principles study of surface properties of uranium silicides

We report that uranium silicides are currently under investigation as accident tolerant fuels for light water reactors because of its high uranium density and high thermal conductivity. Surface energy as an important material property is required for modeling of gas bubble behavior in nuclear fuels using mesoscale approaches, such as phase field and rate theory methods. However, there is no such information available for uranium silicides from either experiment or theory. To this end, we study the surface properties of two uranium silicide compounds U 3 Si 2 and U 3 Si using first-principles calculations. Of the low-index facets of tetragonal U 3 Si 2 and U 3 Si, we study a total of 13 surfaces up to a maximum Miller index of 3. From the calculated surface energies, the equilibrium single crystal shapes of U 3 Si 2 and U 3 Si are obtained using Wulff construction. The dominant surface orientation, surface area weighted surface energy and surface anisotropy are predicted. Finally, the obtained surface properties of U 3 Si 2 and U 3 Si can be used for an accurate description of the morphology of fission gas bubbles in uranium silicide fuels in the future.

36 MATERIALS SCIENCE↗

DOE OSTI2015

Challenges of nickel silicidation in CMOS technologies

In our paper, we review some of the key challenges associated with the Ni silicidation process in the most recent CMOS technologies. The introduction of new materials (e.g.SiGe), and of non-planar architectures bring some important changes that require fundamental investigation from a material engineering perspective. Following a discussion of the device architecture and silicide evolution through the last CMOS generations, we focus our study on a very peculiar defect, termed NiSi-Fangs. We describe a mechanism for the defect formation, and present a detailed material analysis that supports this mechanism. We highlight some of the possible metal enrichment processes of the nickel monosilicide such as oxidation or various RIE (Reactive Ion Etching) plasma process, leading to a metal source available for defect formation. Furthermore, we investigate the NiSi formation and re-formation silicidation differences between Si and SiGe materials, and between (1 0 0) and (1 1 1) orientations. Finally, we show that the thermal budgets post silicidation can lead to the formation of NiSi-Fangs if the structure and the processes are not optimized. Beyond the understanding of the defect and the discussion on the engineering solutions used to prevent its formation, the interest of this investigation also lies in the fundamental learning within the Ni–Pt–Si–Ge system and some additional perspective on Ni-based contacts to advanced microelectronic devices.

36 MATERIALS SCIENCE↗

DOE OSTI2023

A [CoSiH 2 ] Silylene Synthon Provides Modular Access to Homo- and Heterobimetallic [Co=Si=M] (M = Co, Fe) Silicide Complexes

Base-stabilized [BP 3 iPr ](H) 2 CoSiH 2 (DMAP) (1, [BP 3 iPr ] = PhB(CH 2 P i Pr 2 ) 3 – ; DMAP = 4-dimethylaminopyridine) is a rare instance of a synthon for the simplest “parent” silylene complex (LM=SiH 2 ). Complex 1 was accessed in high yields via double Si–H bond activation in SiH 4 by [BP 3 iPr ]Co(DMAP), and in solution, it undergoes rapid exchange between bound and free DMAP by an associative mechanism (as determined by variable-temperature 1 H NMR dynamic studies). The DMAP ligand of 1 is readily displaced by metal-based fragments that bind silicon and cleave the Si–H bonds of the SiH 2 moiety to produce bimetallic [Co=Si=M] (M = Co, Fe) molecular silicides. Thus, treatment of 1 with 0.5 equiv of (LCo I ) 2 (μ-N 2 ) (L = a tripodal ligand) resulted in the spontaneous formation of [BP 3 iPr ](H) 2 Co=Si=Co(H) 2 L (L = [BP 2 tBu Pz], PhB(CH 2 P t Bu 2 ) 2 (pyrazolyl) - (3); Tp", HB(3,5-diisopropylpyrazolyl) 3 – (4)) with the concomitant release of DMAP. The symmetrical silicide [BP 3 iPr ](H) 2 Co=Si=Co(H) 2 [BP 3 iPr ] (5) was prepared by treatment of a mixture of 1 and [BP 3 iPr ]Co(DMAP) with 2 equiv of Ph 3 B, which in this case is required to sequester DMAP as the elimination product Ph 3 B-DMAP. A heterobimetallic silicide, [BP 3 iPr ](H) 2 Co=Si=Fe(H) 2 [SiP 3 iPr ] (7; [SiP 3 iPr ] = PhSi(CH 2 P i Pr 2 ) 3 ), was obtained via in situ KC 8 reduction of [SiP 3 iPr ]FeCl and subsequent addition of 1 and Ph 3 B. These transformations involving a metal–SiH 2 derivative demonstrate a fundamentally new type of reactivity for silylene complexes and provide a unique synthetic method for construction of molecular silicide complexes.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗