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Results for “SWITCHING ELEMENT”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2

Electronic Neural Networks

Memory based on neural network models content-addressable and fault-tolerant. System includes electronic equivalent of synaptic network; particular, matrix of programmable binary switching elements over which data distributed. Switches programmed in parallel by outputs of serial-input/parallel-output shift registers. Input and output terminals of bank of high-gain nonlinear amplifiers connected in nonlinear-feedback configuration by switches and by memory-prompting shift registers.

Lambe, John↗

Amplitude steered array

A spin stabilized satellite has an electronically despun antenna array comprising a multiplicity of peripheral antenna elements. A high gain energy beam is established by connecting a suitable fraction or array of the elements in phase. The beam is steered or caused to scan by switching elements in sequence into one end of the array as elements at the other end of the array are switched out. The switching transients normally associated with such steering are avoided by an amplitude control system. Instead of abruptly switching from one element to the next, a fixed value of power is gradually transferred from the element at the trailing edge of the array to the element next to the leading edge.

Dietrich, F. J.↗

Ferromagnetic-fluid logic devices

Logic element switches flows of low pressure process control fluid in fluidics assemblies. Device operates both electrically and fluidically and is controlled by passing permanent magnet or electromagnet over elements, thus providing proximity switching functions.

Makowski, M. J.↗

Parallel-Access Alinement Network Using Barrel Switches

Practical version of parallel-access alinement network utilizes two barrel switches for interfacing N parallel memory modules with N parallel processing elements. Switches are interconnected where 17 memory ports (MP's) are connected to 17 processor ports (PP's). Network uses two electronic barrel switches to direct data flow in parallel data-processing system. Each switch can shift a multibit parallel input a predetermined number of places to left or right, end off, or end around in one clock-pulse.

Barnes, George H.↗

System-state and operating condition sensitive control method and apparatus for electric power delivery systems

This invention provides a method and apparatus for determining a precise switching sequence for the power switching elements of electric power delivery systems of the on-off switching type and which enables extremely fast transient response, precise regulation and highly stable operation. The control utilizes the values of the power delivery system power handling network components, a desired output characteristic, a system timing parameter, and the externally imposed operating conditions to determine where steady state operations should be in order to yield desired output characteristics for the given system specifications. The actual state of the power delivery system is continuously monitored and compared to a state-space boundary which is derived from the desired equilibrium condition, and from the information obtained from this comparison, the system is moved to the desired equilibrium condition in one cycle of switching control. Since the controller continuously monitors the power delivery system's externally imposed operating conditions, a change in the conditions is immediately sensed and a new equilibrium condition is determined and achieved, again in a single cycle of switching control.

Burns, III, William Wesley↗

Nanosecond photonic switch architectures demonstrated in an all-digital monolithic platform

We present an all-digital, fully programmable, nanosecond-scale photonic switch platform, monolithically integrating electronics for actuation, tuning, and power-monitoring alongside switching elements, resulting in a scalable, packageable solution for high-radix photonic switch fabrics. Furthermore by utilizing this platform, we achieve record loss and extinction performances comprising a 2x2 Mach Zehnder switch with 0.8 dB of loss and 28 dB extinction and a 2x2 nested Mach Zehnder switch with 1.3 dB of loss and 38 dB extinction.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

High voltage DC switchgear development for multi-kW space power system: Aerospace technology development of three types of solid state power controllers for 200-1100VDC with current ratings of 25, 50, and 80 amperes with one type utilizing an electromechanical device

Three types of solid state power controllers (SSPC's) for high voltage, high power DC system applications were developed. The first type utilizes a SCR power switch. The second type employes an electromechanical power switch element with solid state commutation. The third type utilizes a transistor power switch. Significant accomplishments include high operating efficiencies, fault clearing, high/low temperature performance and vacuum operation.

Billings, W. W.↗

Frequency shifting with a solid-state switching capacitor

Frequency shifting, commonly used in electronic signal processing, is applied in tuning, automatic frequency control, antenna element switching, phase shifting, etc. Frequency shifting can be accomplished economically and reliably with simple circuit comprising conventional resistor and solid-state switching device which can be equivalent to two capacitors, depending on switching state.

Mattauch, R. J.↗

Push—pull microring-assisted space-and-wavelength selective switch

We introduce a novel design of a space-and-wavelength selective switch based on microring-assisted Mach–Zehnder interferometers. Multiple pairs of overcoupled microring resonators are incorporated as efficient and narrowband phase shifters and are driven in push–pull scheme. We design and demonstrate a 2 × <#comment/> 2 × <#comment/> 2 λ <#comment/> elementary switch block with full spatial and spectral switching capabilities. The switching device’s cross talk suppression and extinction ratio both exceed 21 dB. We measure over 75 GHz optical bandwidth per channel and less than 1.5 dB power penalty at 10 − <#comment/> 9 BER when two 32 Gbps on–off keying signals are loaded simultaneously. This new class of switching elements can further enable compact and high-performance space-and-wavelength selective switch fabrics without the need for wavelength (de)multiplexers or parallel switching planes.

Huang, Yishen (ORCID:0000000278710462)↗

New Generation Power System for Space Applications

The Deep Space Avionics (DSA) Project is developing a new generation of power system building blocks. Using application specific integrated circuits (ASICs) and power switching modules a scalable power system can be constructed for use on multiple deep space missions including future missions to Mars, comets, Jupiter and its moons. The key developments of the DSA power system effort are five power ASICs and a mod ule for power switching. These components enable a modular and scalab le design approach, which can result in a wide variety of power syste m architectures to meet diverse mission requirements and environments . Each component is radiation hardened to one megarad) total dose. The power switching module can be used for power distribution to regular spacecraft loads, to propulsion valves and actuation of pyrotechnic devices. The number of switching elements per load, pyrotechnic firin gs and valve drivers can be scaled depending on mission needs. Teleme try data is available from the switch module via an I2C data bus. The DSA power system components enable power management and distribution for a variety of power buses and power system architectures employing different types of energy storage and power sources. This paper will describe each power ASIC#s key performance characteristics as well a s recent prototype test results. The power switching module test results will be discussed and will demonstrate its versatility as a multip urpose switch. Finally, the combination of these components will illu strate some of the possible power system architectures achievable fro m small single string systems to large fully redundant systems.

power switching↗

A 0.2–2 GHz Time-Interleaved Multistage Switched-Capacitor Delay Element Achieving 2.55–448.6 ns Programmable Delay Range and 330 ns/mm 2 Area Efficiency

Simulation of radar returns, full-duplex systems, and signal repeaters require hundreds of ns of programmable broadband radio frequency (RF) delay in the signal path to simulate large distances in the case of radar returns, for signal cancellation in full-duplex, and for isolation from reflections in signal repeaters. However, programmable broadband RF delay has been limited to ones of ns due to challenges in miniaturization with low loss and low power consumption. In this work, we present a 0.2–2 GHz digitally programmable RF delay element based on a time-interleaved multistage switched-capacitor (TIMS-SC) approach. The proposed approach enables hundreds of ns of broadband RF delay by employing sample time expansion in multiple stages of switched-capacitor storage elements. Further, the delay element was implemented in a 45 nm SOI CMOS process and achieves a 2.55–448.6 ns programmable delay range with < 0.12% delay variation across 1.8 GHz of bandwidth at maximum delay, 2.42 ns programmable delay steps, and 330 ns/mm 2 area efficiency. Through the proposed approach, the device shows minimal delay change across a -40 °C to 85 °C temperature range and < 0.25 dB gain variation across delay settings. The device achieves 26 dB gain, 7.4 dB noise figure, and consumes 74 mW from a 1 V supply with an active area of 1.36 mm 2 .

42 ENGINEERING↗

High-voltage, full-floating 10-MHz square-wave generator with phase control

Wherein a fast (50 ns) rise-time high-frequency square-wave generator capable of switching between arbitrary voltages of high potential difference (1000 V or more) is described utilizing solid-state circuitry of low power consumption. Power field effect transistors are used as the active switching element, which afford compact size and simplified circuit construction. With the addition of monostable multivibrators, high-voltage square-wave pulse trains of controllable phase are produced. The generator should find application in a wide variety of situations where fast switching between high voltages is required, such as in time-of-flight, coincidence, and beams-modulation experiments.

Bernius, Mark T.↗

Antiphase-Boundary-Engineered Domain Switching in a (110)-Oriented BiFeO 3 Film

A ferroelectric domain wall memory device exploits the presence (or absence) of domain walls as the basis for information storage. Although structural defects strongly influence ferroelectric domain wall nucleation and growth, this correlation is far from being fully understood. For example, a single defect can play opposing roles: it can act as a nucleation site to initiate domain switching or, conversely, serve as a pinning center inhibiting domain wall motion. This is particularly the case for antiphase boundaries (APBs), whose influence on switching remains relatively unexplored despite being ubiquitous in oxide perovskite ferroelectrics. Here, we use aberration-corrected scanning transmission microscopy and in situ transmission electron microscopy under an applied bias to extensively characterize the influence of an APB on the switching behavior in a (110)-oriented BiFeO 3 thin film. We demonstrate that deterministic nucleation occurs in the proximity of a vertically oriented APB, following which domain growth occurs laterally in a symmetric fashion. Atomic-scale structural analysis reveals that the shear operation vector for the APB is 1/2[110]; this half-unit-cell shift extends over a few nanometers, implying that the APB plane is inclined toward the imaging direction. The symmetric switching observation is attributed to local inhomogeneous lattice strain and a reduction of polarization caused by the APB. These results demonstrate that an extended structural defect can be used as an active switching element rather than a stumbling block in reprogrammable domain-wall-based devices. Ultimately, this will expand the capabilities of ferroelectric thin films for future electronic devices based on ferroelectric domain walls.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Terahertz Detection Using Enhanced Two‐Step Absorption in Photoconductive Metasurfaces Gated at λ = 1.55 µm

Abstract Superior ultrafast photoconductive properties make low temperature grown (LT) GaAs one of the best materials for photoconductive terahertz (THz) detection. However, the large bandgap of LT‐GaAs limits its operation to gating at wavelengths shorter than 870 nm. Here, it is demonstrated for the first time that nanostructuring the LT‐GaAs into a highly absorbing metasurface enables THz photoconductive detection with a pulsed laser at λ = 1.55 µm. The very weak sub‐bandgap absorption mediated by midgap states in LT‐GaAs is strongly enhanced using the concept of perfect absorption via degenerate critical coupling. Integrated with a THz antenna, the LT‐GaAs metasurface enables high sensitivity THz detection with a high dynamic range of 60 dB and large bandwidth up to 4.5 THz. The LT‐GaAs metasurface has the potential to serve as a universal ultrafast switching element for THz applications, enabling low‐cost, turn‐key THz systems for a variety of real‐world applications.

Jung, Hyunseung↗

Switching Time Probing in Electric Field–Assisted Magnetization of PbZrTiO{sub 3}/Cobalt Structure

Electric field–assisted full magnetization switching in a multiferroic heterostructure composed of a PbZrTiO{sub 3} (PZT) substrate and 100 nm cobalt (Co) layer was investigated. For this, by measuring magnetic in plane anisotropy of the sample, using magneto-optical Kerr effect (MOKE), it was shown that the sample has a uniaxial anisotropy. In addition, the coercive field of the Co layer can be tuned by applying an electric field to the PZT which can be used in electric field–assisted magnetization reversal in the Co layer. Direct measurement reveals that electric field–assisted magnetization switching in layers take place in about 100 μs that is in compatibility with domain wall motion. Our measurement is a promising technique for probing of switching time in electric field–assisted magnetization switching elements.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗