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At least 37 records · Page 2

Tip-based proximity ferroelectric switching and piezoelectric response in wurtzite multilayers

Proximity ferroelectricity is a paradigm for inducing ferroelectricity when a nonferroelectric polar material (such as Al⁢ N), which is unswitchable with an external field below the dielectric breakdown field, becomes a practically switchable ferroelectric in direct contact with a thin switchable ferroelectric layer (such as Al 1−𝑥 ⁢Sc 𝑥 ⁢N). Here, we develop a Landau-Ginzburg-Devonshire approach to study the proximity effect of local piezoelectric response and polarization reversal in wurtzite ferroelectric multilayers under a sharp electrically biased tip. Using finite-element modeling, we analyze the probe-induced nucleation of nanodomains, the features of local polarization hysteresis loops and coercive fields in the Al 1−𝑥 ⁢Sc 𝑥 ⁢N/Al⁢ N bilayers and three-layers. Similar to the wurtzite multilayers sandwiched between two parallel electrodes, the regimes of “proximity switching” (when all layers collectively switch) and the regime of “proximity suppression” (when they collectively do not switch) are the only two possible regimes in the probe-electrode geometry. However, the parameters and asymmetry of the local piezoresponse and polarization hysteresis loops depend significantly on the sequence of the layers with respect to the probe. The physical mechanism of proximity ferroelectricity in the local probe geometry is a depolarizing electric field determined by the polarization of the layers and their relative thickness. The field, whose direction is opposite to the polarization vector in the layer(s) with the larger spontaneous polarization (such as Al⁢ N), renormalizes the double-well ferroelectric potential to lower the steepness of the switching barrier in the “otherwise unswitchable” polar layers. Tip-based control of domains in otherwise nonferroelectric layers using proximity ferroelectricity can provide nanoscale control of domain reversal in memory, actuation, sensing, and optical applications. The ability of the tip-induced proximity switching to differentially switch multilayers, based on the order of the layers, provides a powerful tool for selective domain engineering.

36 MATERIALS SCIENCE

Propulsion System Design using a Dual 3-Phase PM Synchronous Reluctance Machine with X-Type Multi-Level GaN Inverter

— A propulsion system design is exhibited here that comprises of an X-type GaN power module based dual multi-level inverter and a PM Synchronous Reluctance motor. With the critical benefits of multi-level operation, namely low common mode EMI noise, low switching loss, low current Total Harmonic Distortion (THD), smoother torque and lower iron loss, this topology targets high system-level efficiency and high power density while using reduced rare earth (RE) elements in its motor. General Motors and Purdue University jointly designed and developed this 800V class, highly scalable traction drive that can deliver 200+ kW of power suitable for C-SUV to truck vehicle class. The 3-phase electric machine design utilizes dual winding with 6 terminals to work in line with the GaN X-type inverter, and results in a tractive solution that ensures higher machine efficiency while reducing cost and uncertainty related to use and availability of heavy rare earth/rare earth elements in its rotor.

MOMEN, FAIZUL [General Motors LLC, Detroit, MI (Un

From prediction to experimental realization of ferroelectric wurtzite Al1− x Gd x N alloys

AlN-based alloys find widespread application in high-power microelectronics, optoelectronics, and electromechanics. The realization of ferroelectricity in wurtzite AlN-based heterostructural alloys has opened up the possibility of directly integrating ferroelectrics with conventional microelectronics based on tetrahedral semiconductors, such as Si, SiC, and III–Vs, enabling compute-in-memory architectures, high-density data storage, and more. The discovery of AlN-based wurtzite ferroelectrics has been driven to date by chemical intuition and empirical explorations. Here, we demonstrate the computationally-guided discovery and experimental demonstration of new ferroelectric wurtzite Al1−xGdxN alloys. First-principles calculations indicate that the minimum energy pathway for switching changes from a collective to an individual switching process with a lower overall energy barrier, at a rare-earth fraction x with x > 0.10–0.15. Experimentally, ferroelectric switching is observed at room temperature in Al1−xGdxN films with x > 0.12, which strongly supports the switching mechanisms in wurtzite ferroelectrics proposed previously [Lee et al., Sci. Adv. 10, eadl0848 (2024)]. This is also the first demonstration of ferroelectricity in an AlN-based alloy with a magnetic rare-earth element, which could pave the way for additional functionalities such as multiferroicity and opto-ferroelectricity in this exciting class of AlN-based materials.

36 MATERIALS SCIENCE

Nitrogen: A promising doping strategy for high-performance ovonic threshold switching selectors

The Ovonic Threshold Switching (OTS) selector serves as an essential component in the development of three-dimensional high-density memory integration technology. Nevertheless, the state-of-the-art high-performance OTS materials usually contain toxic elements such as arsenic (As), posing significant risks to both environmental and human health. Nitrogen (N), which belongs to the same group as arsenic (As), has emerged as a highly promising alternative for As doping. However, the underlying mechanisms that govern N-based OTS materials have not yet been extensively investigated. In this study, we delve into the effects of N doping on the structural, bonding, and electronic properties of amorphous GeSe (a-GeNSe) by ab initio molecular dynamics simulations to bridge the knowledge gap. Our findings indicate that upon N doping in a-GeSe, the formation of robust Ge-N bonds, along with N-centered tetrahedral and triangular structures, resulting in the sluggish atomic movement that enhances the thermal stability and endurance of a-GeNSe. The OTS characteristics are significantly influenced by the material’s electronic band structure, and thus the relatively slow performance drift can be attributed to the stabilization of mid-gap states, a result of N doping which effectively slows down the aging process of chalcogenide glass. Moreover, the increased mobility gap in a-GeNSe raises the threshold voltage (V th ), making it more compatible with commercially available phase-change memory materials. Furthermore, our findings reveal the extensive impact of the N element on a typical OTS material and offer valuable perspectives for alternative doping strategies that could potentially supplant As practices.

36 MATERIALS SCIENCE

Shared aperture antenna array

A shared aperture antenna array including an array of antennas is disclosed. Elements of neighboring antennas are shared to create additional antennas. The shared elements include radiating patches and apertures. Each antenna shares an aperture with neighboring antennas. The array of antennas may be linear or two-dimensional. A phase shifting network with single-pole-single-throw reflective switches may be coupled to the antennas.

Tedeschi, Jonathan R.

Optimal Hairpin Winding Configuration for EV Traction Motors to Enhance Active CMV Cancellation Capability of NPL.X Inverter

Active common-mode voltage (CMV) cancellation in neutral-point-less (NPL.X) inverter is an effective approach for reducing common-mode electromagnetic interference and alleviating voltage stress associated with high-speed switching in EV traction drives. However, the existing hairpin winding configuration often exhibits impedance imbalance due to slot leakage inductance and manufacturing constraints, limiting the effectiveness of active CMV cancellation. This paper investigates symmetric hairpin winding configurations for a dual-three-phase EV traction machine to improve impedance symmetry. Considering the manufacturing constraints of six-layer hairpin windings, four feasible symmetric winding configurations are analyzed. Two-dimensional finite-element analysis is performed to extract the impedance parameters of each configuration. The extracted impedance parameters are used to quantify the impedance mismatch between complementary phase pairs and evaluate its influence on active CMV cancellation. The results show that the fully interleaved winding configuration achieves perfectly balanced phase impedances with 0 % mismatch, whereas the mismatch in the other configurations ranges from approximately 2.4 % to 0.8 %. Consequently, the resulting total CMV overshoot is significantly suppressed to near zero voltage under high-voltage and high switching frequency operating conditions, demonstrating the importance of winding symmetry for maximizing the active CMV cancellation capability of the NPL.X inverter.

Lee, Kangbeen [Purdue Univ., West Lafayette, IN (U

Proximity ferroelectricity in wurtzite heterostructures

Proximity ferroelectricity is an interface-associated phenomenon in electric-field-driven polarization reversal in a non-ferroelectric polar material induced by one or more adjacent ferroelectric materials. Here, in this paper, we report proximity ferroelectricity in wurtzite ferroelectric heterostructures. In the present case, the non-ferroelectric layers are AlN and ZnO, whereas the ferroelectric layers are Al 1−x B x N, Al 1−x Sc x N and Zn 1−x Mg x O. The layered structures include nitride–nitride, oxide–oxide and nitride–oxide stacks that feature two-layer (asymmetric) and three-layer (symmetric) configurations. Ferroelectric switching in both layers is validated by multimodal characterization methods, including polarization hysteresis, anisotropic chemical etching, second harmonic generation, piezo response force microscopy, electromechanical testing and atomic resolution polarization orientation imaging in real space by scanning transmission electron microscopy. We present a physical switching model in which antipolar nuclei originate in the ferroelectric layer and propagate towards the internal non-ferroelectric interface. The domain wall leading edge produces elastic and electric fields that extend beyond the interface at close proximity, reducing the switching barrier in the non-ferroelectric layer, and allowing complete domain propagation without breakdown. Density functional theory calculations of polymorph energies, reversal barriers and domain wall energies support this model. Proximity ferroelectricity enables polarization reversal in wurtzites without the chemical or structural disorder that accompanies elemental substitution, opening new questions and opportunities regarding interface-based ferroelectricity.

36 MATERIALS SCIENCE

Ferroelectricity of wurtzite Al 1−x Hf x N heterovalent alloys

Thin films of aluminum hafnium nitride (Al1−xHfxN) were synthesized via reactive magnetron sputtering for Hf contents up to x = 0.13. X-ray diffraction showed a single c-axis oriented wurtzite phase for all films. Hard x-ray photoelectron spectroscopy demonstrated homogeneous Al:Hf distribution through the thin films and confirmed their insulating character. A collection of complementary tests showed unambiguous polarization inversion, and thus ferroelectricity in multiple samples. Current density vs electric field hysteresis measurements showed distinct ferroelectric switching current peaks, the piezoelectric coefficient d 33,f,meas measured using a double beam laser interferometer (DBLI) showed a reversal in sign with similar magnitude, and anisotropic wet etching confirmed field-induced polarization inversion. This demonstrates the possibility of using tetravalent–and not just trivalent–alloying elements to enable ferroelectricity in AlN-based thin films, highlighting the compositional flexibility of ferroelectricity in wurtzites and greatly expanding the chemistries that can be considered for future devices.

36 MATERIALS SCIENCE

Tradeoffs in single stage drift step recovery diode generator design

A high-voltage generator of nanosecond pulses utilizing a drift step recovery diode (DSRD) as an opening switch in the compression section is designed to operate at peak voltages of 4 kV and repetition rates of 2 MHz in burst mode at reduced voltages. The generator is used to perform empirical studies on the output metrics of a DSRD generator with a focus on matching the circuit of the reverse current loop parameters and DSRD to the load. The dynamic impedance introduced by nonlinear elements in the DSRD was investigated with respect to the driving circuit by varying the number of DSRDs connected in series. Experimental results indicate that optimization of the driving circuit for the DSRD is key to minimizing losses and achieving optimal pulse compression. Furthermore, the results also indicate trends in DSRD performance as larger storage inductances and longer pumping times are used, limiting the pulse compression capabilities of a single stage DSRD generator.

Electrical properties and parameters

0D, 1D, 2D, and 3D simulations of an idealized coaxial impedance-matched Marx generator

We have conducted 0D, 1D, 2D, and 3D simulations of an idealized coaxial impedance-matched Marx generator (IMG) []. The 0D calculations were conducted with a four-element circuit model; the 1D, 2D, and 3D calculations were conducted with highly resolved, fully electromagnetic representations. The IMG consists of 30 stages distributed axially and connected electrically in series. Each stage is powered by two bricks separated by 180° and connected electrically in parallel. Each brick comprises two opposite-polarity capacitors in series with a single switch. The bricks drive an internal impedance-matched coaxial transmission line terminated by a resistive load. The simulations neglect effects due to the switch-triggering circuit, the capacitor-charging circuit, external conducting boundaries, and reactive components of the load. We find dimensionality does not significantly affect the electrical power delivered by the IMG to its load: peak load powers estimated by the 0D, 1D, 2D, and 3D simulations agree to within 1%. The 3D calculations demonstrate that electromagnetic power radiated by the bricks, and axial gaps between stages, reduces the peak load power by less than ∼ 1 % . Each simulation assumes the load impedance is 34% above that at which the load power is maximized. Operating an IMG with such an overmatched load offers several advantages while decreasing the peak load power by only 2%. The 0D, 1D, 2D, and 3D models outlined herein could be adapted to assess computationally competing IMG designs, and conduct a variety of numerical IMG experiments, an IMG is constructed. Published by the American Physical Society 2024

43 PARTICLE ACCELERATORS

A Comprehensive Study of the Impact of Inverter-Based Resource (IBR) Modeling and Control on Protection Relay Elements

Inverter-based resources (IBRs) exhibit fault responses that differ significantly from those of synchronous generators, which can challenge the reliable operation of many commonly used power system protection elements. The fault response of IBRs is primarily influenced by their control algorithms and configurations, but the impact of these controls on protection relays is not yet fully understood. This presentation provides a comprehensive study of how IBR modeling and controls affect transmission line protection. Key modeling and control aspects include the DC source, inverter model, power level control, current control, and current limiting. The study reveals that certain aspects - such as the type of DC source (battery, PV, or hybrid), inverter model (average vs. switching), and power level control methods (PQ dispatch vs. Vdc-Vac control for grid-following IBRs, and droop vs. VSM for grid-forming IBRs) - do not significantly affect relay response. However, faster control loops, such as current control and current limiting, do influence the relay behavior. Additionally, the study explores the effects of other factors, including momentary cessation, operating points, fast/slow current responses, and grid strength on relay performance. Finally, the study offers recommendations for both IBR and protection engineers to improve IBR fault response and enhance the reliability of protection systems.

14 SOLAR ENERGY

Challenges and Gaps in the Development of Pulsed Power for Fusion Applications: A Preroadmapping Perspective From Industry, Academia, and National Laboratory Experts

Fusion energy meets the twenty-first century World Grand Challenge of sustainable, ubiquitous, and safer energy sources. However, harnessing the promise of fusion energy has proven elusive. The competing approaches to fusion power plant design include inertial confinement fusion, National Ignition Facility (ICF-NIF, Z machine, etc.,) magnetic confinement fusion (MCF-Tokamak, stellarators, etc.), and other approaches that show promise in small- (flow stabilized Z pinches) or large-scale applications. These approaches are being accelerated with private and public funding and seek to demonstrate the feasibility of different approaches to fusion-based power plants. Yet, how can the necessary pulsed power technologies for these disruptive technology bases be accelerated with no clear “Dominant Design?” Roadmapping holds the promise to identify and develop common critical pulsed power components for laboratory, prototype, and commercial fusion, and can accelerate the commercialization of fusion reactor designs. A preroadmapping Workshop on Pulsed Power for Fusion was held at the IEEE International Pulsed Power Conference in San Antonio, TX, USA, in June 2023. The workshop had 177 attendees. Here, the common elements for many of the ICF technologies vying for dominant design were identified. The advancement of these technologies through roadmapping will enhance commercial expectations that require their rapid and innovative development in the next five years, as well as the next five to ten years. The key technologies identified that underpin and limit the advancement of fusion power include pulsed power technologies such as energy storage, high-voltage switching, additive manufacturing, and modular pulsed power circuit topologies. In conclusion, they are the focus of our effort in the following roadmap scenario, which will delineate potential paths to technology development.

Curry, Randy D. [I-Pulse Group, Albuquerque, NM (U

Transport signatures of phase fluctuations in superconducting qubits

Abstract Josephson junctions supply the nonlinear inductance element in superconducting qubits. In the widely used transmon configuration, where the junction is shunted by a large capacitor, the low charging energy minimizes the sensitivity of the qubit to charge noise while maintaining the necessary anharmonicity to qubit states. We report here low-frequency transport measurements on small standalone junctions and identically fabricated capacitively-shunted junctions that show two distinct features normally attributed to small capacitance junctions near zero bias: reduced switching currents and prominent finite resistance associated with phase diffusion in the current–voltage characteristic. Our transport data reveals the existence of phase fluctuations in transmons arising from intrinsic junction capacitance.

Wisne, M. (ORCID:0009000610684209)

Observation of Topological Chirality Switching Induced Freezing of a Skyrmion Crystal

Magnetic skyrmions are topologically protected quasi-particles with a well-defined chirality. Control over their chirality is proposed as an additional feature for encoding data bits or as qubits in quantum computing due to their high efficiency and stability against achiral magnetic textures. Here it is shown that an in-plane magnetic field can be utilized to reshape the energy barriers between different skyrmionic bubbles (e.g., Bloch type, type-II) enabling spontaneous chirality fluctuations with a frequency that increases with the strength of the in-plane field. The insulating van der Waals ferromagnet CrBr3 is used as an archetypal system for low damping, reduced energy dissipation and a high number of magnetic phases to capture the chirality dynamics in real time through cryo-Lorentz transmission electron microscopy. It is observed that the interplay between the intrinsic Dzyaloshinskii–Moriya interaction and out-of-plane field biased the chirality dynamics, favoring one handedness over the other. A remarkable consequence of the spontaneous chirality switching mechanism is that it induces a freezing (or crystallization) process in the skyrmion lattice. As the bubbles fluctuate between Bloch and type-II they elongate and shrink parallel to the in-plane field. Subsequently, the overall lattice crystallizes along the in-plane field direction, inducing a phase transition from a disordered liquid state to a hexatic phase where skyrmions are highly ordered resembling that of a solid. The results indicate chirality as an active element in the creation of topologically protected skyrmion crystals unveiling pathways toward chiral spintronic device platforms with tunable embedded configuration.

2D Phase Transition

Spin switchable optical phenomena in Rashba band structures through intersystem crossing in momentum space in solution-processing 2D-superlattice perovskite film

Spin-switchable phenomena are a critical element for the development of spintronic and chiroptic devices. Herein we combine a 2D-superlattice perovskite (4,4-DFPD2PbI4) film with a ferromagnetic cobalt (Co) layer to form a multiferroic perovskite/Co interface, and demonstrate spin-switchable circularly polarized luminescence (CPL) between right-handed σ+ and left-handed σ− polarizations. When the ferromagnetic spins of Co at the Co/perovskite interface are altered between positive and negative magnetic field directions, the CPL from the 2D-superlattice perovskite switches from σ+ to σ− polarization. The magnetic field effects present a unique method to confirm that CPL is generated by the circular-orbital momentum of light-emitting excitons within Rashba band structures, eliminating artifacts involving structural birefringence. Our polarized neutron reflectometry measurements confirm a super long-range spin-orbit interaction occurring in the 2D-superlattice perovskite films. The temperature dependence of spin-switchable phenomenon indicates an extraordinarily long orbital polarization lifetime, reaching microseconds at room temperature and milliseconds at 5 K.

36 MATERIALS SCIENCE

A Unified Wireless Charger, On-Board Charger, and Auxiliary Power Module for Electric Vehicle Charging Systems

This paper proposes a unified electric vehicle (EV) charging architecture that integrates wireless power transfer (WPT), an on-board charger (OBC), and an auxiliary power module (APM) within a single architecture. By sharing a multi-functional magnetic structure and active switch bridges, the proposed topology eliminates additional transformers and converter stages, reducing hardware complexity and improving power density. A multipurpose magnetic design achieves magnetic decoupling among the WPT, OBC, and APM functions while maintaining the required coupling for each mode. Through electrical reconfiguration, the WPT operates as an LCC-S converter, whereas the OBC and APM operate as dual-active-bridge (DAB) converters. The system supports multiple operating modes, including simultaneous high-voltage and lowvoltage battery charging. Finite-element and circuit simulations verify the magnetic characteristics and system operation, demonstrating the feasibility of the proposed unified architecture for EV charging applications.

Jo, Cheolhui [ORNL] (ORCID:0000000322692434)

How Inverter-Based Resources (IBRs) Affect Protection Relay Elements

Inverter-based resources (IBRs) exhibit fault responses that differ significantly from those of synchronous generators, which can challenge the reliable operation of many commonly used power system protection elements. The fault response of IBRs is primarily influenced by their control algorithms and configurations, but the impact of these controls on protection relays is not yet fully understood. This presentation provides a comprehensive study of how IBR modeling and controls affect transmission line protection. Key modeling and control aspects include the DC source, inverter model, power level control, current control, and current limiting. The study reveals that certain aspects - such as the type of DC source (battery, PV, or hybrid), inverter model (average vs. switching), and power level control methods (PQ dispatch vs. Vdc-Vac control for grid-following IBRs, and droop vs. VSM for grid-forming IBRs) - do not significantly affect relay response. However, faster control loops, such as current control and current limiting, do influence the relay behavior. Additionally, the study explores the effects of other factors, including momentary cessation, operating points, fast/slow current responses, and grid strength on relay performance. Finally, the study offers recommendations for both IBR and protection engineers to improve IBR fault response and enhance the reliability of protection systems.

14 SOLAR ENERGY

Fiber loop quantum buffer for photonic qubits

Abstract We report a fiber loop quantum buffer based on a low-loss 2 × 2 switch and a unit delay made of a fiber delay line. We characterize the device by using a two-photon polarization entangled state in which one photon of the entangled photon pair is stored and retrieved at a repetition rate up to 78 kHz. The device, which enables integer multiples of a unit delay, can store the qubit state in a unit of fiber delay line up to 5.4 km and the number of loop round-trips up to 3. Furthermore, we configure the device with other active elements to realize integer multiplier and divider of a unit delay of a qubit. The quantum state tomography is performed on the retrieved photon and its entangled photon. We obtain a state fidelity > 94 % with a maximum storage time of 52 s with an insertion loss of 5.56 dB. To further characterize the storing and retrieving processes of the device, we perform entanglement-assisted quantum process tomography on the buffered qubit state. The process fidelity of the device is > 0.98. Our result implies that the device preserves the superposition and entanglement of a qubit state from a two-photon polarization-entangled state. This is a significant step towards facilitating applications in optical asynchronous transfer mode based quantum networks.

Fook Lee, Kim (ORCID:0000000290901640)