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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Tuning discharge voltage by Schottky electron barrier in P2-Na 2/3 Mg 0.205 Ni 0.1 Fe 0.05 Mn 0.645 O 2

Recently, Mg doped Na metal oxide layered cathode compounds have attracted strong interest for Na-ion battery applications. We report a new type of asymmetric phase evolution between charge and discharge is found to show much-enhanced discharge voltage in P2-Na 2/3 Mg 0.205 Ni 0.1 Fe 0.05 Mn 0.645 O 2 over the parent cathode compound. P2 solid solution is found to show an abnormal coexistence with O2-P2 two-phase reaction during discharge with simultaneous reduction of O, Ni, and Fe redoxes, distinct from the conventional P2-O2 two-phase reaction in the charge. Our analysis suggests that the P2 and O2 two-phase boundary forms a novel unidirectional Schottky barrier to impede electron and Na diffusions in discharge only, thus making the kinetically preferred P2 solid solution phase abnormally coexist with the two-phase region for high discharge voltage and low polarization. Our work demonstrates tuning dynamic evolution of electronic Schottky barrier as a new dimension for advanced kinetic design of high-performance battery cathode materials.

25 ENERGY STORAGE↗
DOE OSTI2021

Large area vertical Ga 2 O 3 Schottky diodes for X-ray detection

In this work, the Schottky barrier diodes were fabricated from a bulk Sn-doped (001) n-type Ga 2 O 3 substrate with a Si-doped epitaxial layer grown by hydride vapor phase epitaxy (HVPE), which demonstrate a good response to X-rays. Circular metal contacts with diameters ranging from 50 to 1500 um and square metal contacts ranging from 100 X 100 to 1600 X 1600 um 2 were deposited on the wafer. The devices were characterized for their electrical performance including forward current–voltage (FIV), reverse current–voltage (RIV), and capacitance-voltage (CV) measurements. The best device showed a breakdown voltage of –804 V and the devices tested had an average ideality of 1.12. The devices exhibited a clear response to X-rays even at zero bias with an experimentally observed response time 1.03 s and a linear response of detector signal to the X-ray dose rate. The experimentally observed device response time improved to 0.25 s when bias voltage is applied. The device also survived a long-term stability test of over 2 h under a constant X-ray irradiation. The sensitivity and the lower limit of detection for X-ray by Ga2O3 epitaxial Schottky detectors were discussed and determined as 43.5 C/mGy cm –2 at –200 V and 8.31 nGy Air /s, respectively.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2024

Demonstrating the β-Ga 2 O 3 Schottky diodes for alpha radiation detection

Schottky barrier diodes were fabricated on (001) monoclinic β-Ga 2 O 3 wafers with low doped epitaxial layers of 7.0 × 10 15 cm −3 . Circular Ni Schottky contacts with area 2 mm 2 were deposited by electron beam evaporation. Devices were characterized electrically by performing forward and reverse current-voltage sweeps with a range of −100 V–2 V, as well as capacitance-voltage sweeps to −30 V. The breakdown voltage was also determined to be −180 V for the devices. Experiments measuring the electrical response from incident X-ray radiation was performed. A response time to X-ray radiation of less than 1 s was recorded and a decay time of approximately 2 s after removing X-ray source, which primarily attribute to X-ray switching on and off time. Energy spectra of alpha particles from a 0.9 μCi 241 Am button source was collected at various voltage biases using devices with the lowest measured leakage current while reverse biased. The total count rate was observed to increase linearly with increasing device bias. In conclusion, the peak channel number was observed to increase with increasing bias with the best resolution of 9.5% at −100 V reverse bias.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

Solution Processed Schottky Diodes Enabled by Silicon Carbide Nanowires for Harsh Environment Applications

Silicon carbide nanowires (SiC NWs) exhibit promising features to allow solution-processable electronics to be deployed in harsh environments. By utilizing a nanoscale form of SiC, we were able to disperse the material into liquid solvents, while maintaining the resilience of bulk SiC. Here, this letter reports the fabrication of SiC NW Schottky diodes. Each diode consisted of just one nanowire with an approximate diameter of 160 nm. In addition to analyzing the diode performance, the effects of elevated temperatures and proton irradiation on the current–voltage characteristics of SiC NW Schottky diodes were also examined. The device could maintain similar values for ideality factor, barrier height, and effective Richardson constant upon proton irradiation with a fluence of 10 16 ion/cm 2 at 873 K. As a result, these metrics have clearly demonstrated the high-temperature tolerance and irradiation resistance of SiC NWs, ultimately indicating that they may provide utility in allowing solution-processable electronics in harsh environments.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2021

Defect characterization and charge transport measurements in high-resolution Ni/n-4H-SiC Schottky barrier radiation detectors fabricated on 250 μ m epitaxial layers

Advances in the growth processes of 4H-SiC epitaxial layers have led to the continued expansion of epilayer thickness, allowing for the detection of more penetrative radioactive particles. In this work, we report the fabrication and characterization of high-resolution Schottky barrier radiation detectors on 250 μm thick n-type 4H-SiC epitaxial layers, the highest reported thickness to date. Several 8 × 8 mm 2 detectors were fabricated from a diced 100 mm diameter 4H-SiC epitaxial wafer grown on a conductive 4H-SiC substrate with a mean micropipe density of 0.11 cm -2 From the Mott–Schottky plots, the effective doping concentration was found to be in the range (0.95–1.85) × 10 14 cm -3 , implying that full depletion could be achieved at ~5.7 kV (0.5 MV/cm at the interface). The current-voltage characteristics demonstrated consistently low leakage current densities of 1–3 nA/cm 2 at a reverse bias of -800 V. This resulted in the pulse-height spectra generated using a 241Am alpha source (5486 keV) manifesting an energy resolution of less than 0.5% full width at half maximum (FWHM) for all the detectors at -200 V. The charge collection efficiencies (CCEs) were measured to be 98–99% with no discernable correlation to the energy resolution. A drift-diffusion model fit to the variation of CCE as a function of bias voltage, revealed a minority carrier diffusion length of ~10 μm. Deep level transient spectroscopy measurements on the best resolution detector revealed that the excellent performance was the result of having ultralow concentrations of the order of 1011 cm-3 lifetime limiting defects—Z 1/2 and EH 6/7 .

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Interface formation and Schottky barrier height for Y, Nb, Au, and Pt on Ge as determined by hard x-ray photoelectron spectroscopy

Development of a robust, thin, hole-blocking (n+) contact on high purity germanium (HPGe) has been the main challenge in the development of Ge-based radiation sensors. Yttrium has been reported to be a viable hole-blocking contact on HPGe, and detectors with low leakage have been fabricated. Niobium has also been considered as a potential hole-blocking contact due to its low work function. Here, we investigate interface chemistry and the Schottky barrier height of Y and Nb, as well as electron-blocking contacts Au and Pt, on Ge(100) surfaces using hard x-ray photoelectron spectroscopy. We find a barrier height of 1.05 ± 0.10 eV for Y/HPGe, confirming the formation of a hole-blocking barrier. For Nb/HPGe, the barrier height of 0.13 ± 0.10 eV demonstrates that the interface is not hole-blocking. The Schottky barrier of Au and Pt was found to be 0.45 ± 0.10 and 0.51 ± 0.10 eV, respectively.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Impact of metal diffusion, lattice distortions, native defects, and ambient on dielectric breakdown in Ni–Ga 2 O 3 Schottky diodes

Ga 2 O 3 unipolar devices are of high interest due to their ~8 MV/cm predicted breakdown fields, which have not yet been achieved due to premature device failure. Pre- and post-failure defect analysis of Ni–Ga 2 O 3 Schottky diodes in ultrahigh vacuum (UHV) and air were performed using depth-resolved cathodoluminescence, high angle annular dark field scanning transmission electron microscopy, and energy dispersive x-ray analysis to understand the physical mechanisms that precede premature breakdown. The breakdown voltage in UHV was dramatically reduced by nearly 40% compared with the breakdown in air. This reduction in the breakdown voltage correlated with post-breakdown differences in Ni distribution, indicating that the coordination and bonding of Ni contribute strongly to electrical behavior in Ni–Ga 2 O 3 Schottky diodes. Breakdown studies in UHV revealed that Ni diffuses away more from the metal–semiconductor interface than with air breakdown, where Ni localizes more near the interface, indicative of the preferential formation of a Ni oxide under O-poor conditions. These measurements also identified the formation of divacancy-interstitial complexes and their characteristic luminescence signature ~150 nm from the interface, the densities of which correlated with breakdown fields. These findings show that electric-field-induced degradation occurs via the rearrangement of native point defects, which act as an additional precursor to device failure. Macroscopically, they show the impact of both vacuum conditions and metal reactivity on Ga 2 O 3 device fabrication.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Spatial Mapping of Chiral-Induced Spin Selectivity in Chiral Perovskite via Spin-Schottky Junction

Chiral halide perovskite (c-HP) semiconductors exhibit on average a large chiral-induced spin selectivity (CISS) effect. Nevertheless, the microscopic details of CISS and its integration in opto-spintronic constructs remain nascent. Reliable reporting of CISS performance characteristics represents a significant challenge in providing the necessary design rules. We show a Kelvin probe force microscopy (KPFM) method that can quantitatively evaluate and spatially map the chirality-dependent surface contact potential difference resulting from the formation of a spin-Schottky junction. We revealed inhomogeneity in the CISS response, where low-CISS regions in the c-HP films reduce the overall macroscopic average, likely serving as a key factor in optimizing macroscopic performance. We also observed that although c-HP films made from higher precursor concentrations lead to thicker films and higher carrier concentrations with subsequent larger barrier heights in the Schottky junction, stronger spin relaxation due to non-ideal film quality reduces spin polarization.

14 SOLAR ENERGY↗
DOE OSTI2021

Low Thermal Resistance (0.5 K/W) Ga 2 O 3 Schottky Rectifiers With Double-Side Packaging

The low thermal conductivity of Ga 2 O 3 has arguably been the most serious concern for Ga 2 O 3 power and RF devices. Despite many simulation studies, there is no experimental report on the thermal resistance of a large-area, packaged Ga 2 O 3 device. This work fills this gap by demonstrating a 15-A double-side packaged Ga 2 O 3 Schottky barrier diode (SBD) and measuring its junction-to-case thermal resistance (R θJC ) in the bottom-side- and junction-side-cooling configurations. The R θJC characterization is based on the transient dual interface method, i.e., JEDEC 51-14 standard. The R θJC of the junction- and bottom-cooled Ga 2 O 3 SBD was measured to be 0.5 K/W and 1.43 K/W, respectively, with the former R θJC lower than that of similarly-rated commercial SiC SBDs. This low R θJC is attributable to the heat extraction directly from the Schottky junction instead of through the Ga 2 O 3 chip. Here, the R θJC lower than that of commercial SiC devices proves the viability of Ga 2 O 3 devices for high-power applications and manifest the significance of proper packaging for their thermal management.

42 ENGINEERING↗
DOE OSTI2023

High Performance Pd/4H-SiC Epitaxial Schottky Barrier Radiation Detectors for Harsh Environment Applications

Although many refractory metals have been investigated as the choice of contact metal in 4H-SiC devices, palladium (Pd) as a Schottky barrier contact for 4H-SiC radiation detectors for harsh environment applications has not been investigated adequately. Pd is a refractory metal with high material weight-to-thickness ratio and a work function as high as nickel, one of the conventional metal contacts for high performing 4H-SiC Schottky barrier detectors (SBDs). In this article, Pd/4H-SiC epitaxial SBDs have been demonstrated for the first time as a superior self-biased (0 V applied bias) radiation detector when compared to benchmark Ni/4H-SiC SBDs. The Pd/4H-SiC SBD radiation detectors showed a very high energy resolution of 1.9% and 0.49% under self- and optimized bias, respectively, for 5486 keV alpha particles. The SBDs demonstrated a built-in voltage (V bi ) of 2.03 V and a hole diffusion length (L d ) of 30.8 µm. Such high V bi and L d led to an excellent charge collection efficiency of 76% in the self-biased mode. Capacitance mode deep level transient spectroscopy (DLTS) results revealed that the “lifetime-killer” Z 1/2 trap centers were present in the 4H-SiC epilayer. Another deep level trap was located at 1.09 eV below the conduction band minimum and resembles the EH5 trap with a concentration of 1.98 × 10 11 cm –3 and capture cross-section 1.7 × 10 –17 cm –2 ; however, the detector performance was found to be limited by charge trapping in the Z 1/2 center. The results presented in this article revealed the unexplored potential of a wide bandgap semiconductor, SiC, as high-efficiency self-biased radiation detectors. Such high performance self-biased radiation detectors are poised to address the longstanding problem of designing self-powered sensor devices for harsh environment applications e.g., advanced nuclear reactors and deep space missions.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

Molybdenum Contacts to MoS 2 Field‐Effect Transistors: Schottky Barrier Extraction, Electrical Transport, and Low‐Frequency Noise

MoS 2 has great interest for nanoscale electronic devices, including transistors and sensors. Defect‐free structure, clean interface with the gate dielectric, and metals with suitable metal–semiconductor junctions are key for reliable devices. Molybdenum is shown as an excellent electrode for MoS 2 field‐effect transistors (FETs), but the correlation among device current, field‐effect mobility, and the low‐frequency noise (LFN) with number of atomic layers is not studied. Furthermore, the impact of Mo/MoS 2 Schottky barrier on electronic injection and scattering in the device needs to be understood. Herein, by studying the FETs with channels of different numbers of atomic‐layer thicknesses, it is shown that a molybdenum metal contact to MoS 2 provides reliable current injection with low Schottky barrier height, low contact resistance, low electron–phonon scattering, and negligible impurity scattering. The mobility and LFN are optimal at a channel thickness of ≈12 atomic layers, which is consistent with the “mobility maximum window” in MoS 2 transistors with prior studies using other contact metals.

Kwon, Jiseok↗
DOE OSTI2020

Direct metal contacts printing on 4H-SiC for alpha detectors and inhomogeneous Schottky barriers

Electrical characterization of several 4H-SiC Schottky diodes with Aerosol-Jet printed gold (Au), silver (Ag), and platinum (Pt) contacts was performed using forward and reverse current–voltage (IV) measurements. From these measurements, device parameters such as Schottky barrier height and ideality factor were determined; however, many of the devices exhibited nonideal behavior and inferior performance characterized by ideality factors significantly greater than one, disproportionate low voltage leakage current and low barrier heights. Forward current–voltage (FIV) characteristics were fitted to an inhomogeneous barrier height theory to explain the abnormal behavior exhibited by the printed devices. Here, transmission electron microscopy (TEM) of the device cross-sections was performed to investigate the printed metal and semiconductor epitaxial layer interface, which revealed the imperfections in the metal–semiconductor contact. Despite these irregularities, alpha radiation detection capability of these devices was still achieved with an energy resolution of 1.89% at 5.486 MeV, and the best achievable resolution at 0.51% with no energy degradation of 5.486 MeV.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2026

Negative Schottky Barriers and Spin-Polarized Fermi Crossings at WSe 2 /NbSe 2 Interfaces

Discovering and engineering spin-polarized surface states in the electronic structures of condensed matter systems is a crucial first step in the development of spintronic devices, wherein spin-polarized bands crossing the Fermi level can facilitate information transfer. Here, through nanofocused angle-resolved photoemission spectroscopy (nano-ARPES) and density functional theory-based calculations, we show that the interface between monolayer WSe 2 and metallic NbSe 2 exhibits a negative Schottky barrier height of ∼ −30 meV: the K-point valleys of the semiconducting layer are shifted by ∼800 meV to produce a surface-localized Fermi surface populated only by spin-polarized charge carriers. By increasing the WSe 2 thickness, the Fermi pockets can be moved from K to Γ, demonstrating tunability of novel semimetallic phases that exist atop a substrate additionally possessing charge density wave and superconducting phases. Together, this study provides a spectroscopic understanding into p-type, Schottky barrier-free interfaces, which are of urgent interest for bypassing the limitations of current-generation vertical field effect transistors, in addition to longer-term spintronics development.

2D material heterostructures↗
DOE OSTI2025

Growth of tetragonal PtO by molecular-beam epitaxy and its integration into β-Ga 2 O 3 Schottky diodes

We demonstrate the epitaxial growth of tetragonal platinum monoxide (PtO) on MgO, TiO 2 , and β-Ga 2 O 3 single-crystalline substrates by ozone molecular-beam epitaxy. We provide synthesis routes and derive a growth diagram under which PtO films can be synthesized by physical vapor deposition. A combination of electrical transport and photoemission spectroscopy measurements, in conjunction with density functional theory calculations, reveal PtO to be a degenerately doped p-type semiconductor with a bandgap of E g ≈ 1.6 eV. Spectroscopic ellipsometry measurements are used to extract the complex dielectric function spectra, indicating a transition from free-carrier absorption to higher photon energy transitions at E ≈ 1.6 eV. Using tetragonal PtO as an anode contact, we fabricate prototype Schottky diodes on n-type Sn-doped β-Ga 2 O 3 substrates and extract Schottky barrier heights of ϕ B > 2.2 eV.

Hensling, Felix V. E. [Cornell Univ., Ithaca, NY (↗
DOE OSTI2026

Performance of Heterostructural TaC/AlGaN Schottky Diodes Based on First Principles Electronic Structure Properties

Advances in ultra-wide bandgap materials, such as high Al-content AlxGa1-xN (AlGaN), are essential for next generation power electronics, but the requirement for lattice matched substrates is currently a significant obstacle. Recently, conductive TaC has emerged as a promising virtual substrate for AlGaN heteroepitaxy, with wurtzite (0001) AlxGa1-xN lattice-matched to rocksalt (111) TaC at x ~ 0.5. Thus, understanding and controlling the electronic properties of the TaC/AlGaN interface is key for developing technological applications based on TaC/AlGaN devices. Using density functional theory and electronic structure calculations, we here investigate TaC/Al0.5Ga0.5N interfaces, where we include explicit alloy models in the slab calculations. We predict the Schottky barrier height and the electric field discontinuity resulting from interface charges. Considering all possible combinations of (Ta, C) substrate termination, (Al/Ga, N) nucleation, and (Al/Ga, N) polarity, we construct a chemical potential phase diagram to identify the stable interfaces that can be accessed through variation of the synthesis conditions. The predicted interface electronic properties are implemented in device performance simulations to demonstrate a practical design for a strain-free, high-efficiency TaC/AlGaN Schottky diode with a low barrier height and without interface charges, underscoring the potential of TaC as a substrate for ultra-wide bandgap devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Electrical and Thermal Performance of Ga₂O₃–Al₂O₃–Diamond Super-Junction Schottky Barrier Diodes

The design space of Ga 2 O 3 -based devices is severely constrained due to its low thermal conductivity and absence of viable p-type dopants. In this work, we discuss the limits of operation of a novel Ga 2 O 3 –Al 2 O 3 –diamond-based super-junction device concept, which can alleviate the constraints associated with Ga 2 O 3 -based devices. The improvements achieved using the proposed device concept are demonstrated through electrical and thermal simulations of Ga 2 O 3 –Al 2 O 3 –diamond-based super-junction Schottky barrier diodes (SJ-SBDs) and non-punch-through or conventional Schottky barrier diodes (NP-SBDs). The SJ-SBD enables operation below the R ON -breakdown voltage limit of Ga 2 O 3 NP-SBD, enabling >4 kV blocking voltage at R ON of 1–3 mΩ cm 2 . Here, the maximum switching frequency of SJ-SBD may be only a few kHz, as it is limited by the activation energy of acceptors (0.39 eV) in the diamond. Crucially, compared with NP-SBD, the use of diamond also results in ~60% reduction in temperature rise during static power dissipation. Polycrystalline diamond (PCD) properties depend on detailed microstructure and benefits compared to ideal Ga 2 O 3</sub NP-SBD arise for diamond critical fields ≥6 MV/cm and thermal conductivities as low as 50–150 W/(m • K).

36 MATERIALS SCIENCE↗
DOE OSTI2022

AlN quasi-vertical Schottky barrier diode on AlN bulk substrate using Al 0.9 Ga 0.1 N current spreading layer

Abstract An aluminum nitride (AlN) quasi-vertical Schottky barrier diode (SBD) was fabricated on an AlN bulk substrate. An undoped AlN layer, a Si-doped Al 0.9 Ga 0.1 N current spreading layer and an AlN buffer layer were grown by plasma-enhanced molecular beam epitaxy. The epitaxial AlN layer was etched down to the n-Al 0.9 Ga 0.1 N layer to form an Ohmic contact. Ni/Au and V/Al/Ni/Au were deposited on the top AlN layer as Schottky contacts and on the exposed n-Al 0.9 Ga 0.1 N layer as Ohmic contacts, respectively. The Ohmic characteristics on the n-Al 0.9 Ga 0.1 N layer, capacitance–voltage ( C – V ) and current–voltage ( I – V ) characteristics of the AlN SBD were investigated.

Physics↗