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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS2011

A 2.5-2.7 THz Room Temperature Electronic Source

We report on a room temperature 2.5 to 2.7 THz electronic source based on frequency multipliers. The source utilizes a cascade of three frequency multipliers with W-band power amplifiers driving the first stage multiplier. Multiple-chip multipliers are utilized for the two initial stages to improve the power handling capability and a sub-micron anode is utilized for the final stage tripler. Room temperature measurements indicate that the source can put out a peak power of about 14 microwatts with more than 4 microwatts in the 2.5 to 2.7 THz range.

Varactor diodes↗
NASA NTRS2013

On-Chip Power-Combining for High-Power Schottky Diode-Based Frequency Multipliers

A 1.6-THz power-combined Schottky frequency tripler was designed to handle approximately 30 mW input power. The design of Schottky-based triplers at this frequency range is mainly constrained by the shrinkage of the waveguide dimensions with frequency and the minimum diode mesa sizes, which limits the maximum number of diodes that can be placed on the chip to no more than two. Hence, multiple-chip power-combined schemes become necessary to increase the power-handling capabilities of high-frequency multipliers. The design presented here overcomes difficulties by performing the power-combining directly on-chip. Four E-probes are located at a single input waveguide in order to equally pump four multiplying structures (featuring two diodes each). The produced output power is then recombined at the output using the same concept.

Chattopadhyay, Goutam↗
NASA NTRS2015

On-Chip Power-Combining for High-Power Schottky Diode Based Frequency Multipliers

A novel MMIC on-chip power-combined frequency multiplier device and a method of fabricating the same, comprising two or more multiplying structures integrated on a single chip, wherein each of the integrated multiplying structures are electrically identical and each of the multiplying structures include one input antenna (E-probe) for receiving an input signal in the millimeter-wave, submillimeter-wave or terahertz frequency range inputted on the chip, a stripline based input matching network electrically connecting the input antennas to two or more Schottky diodes in a balanced configuration, two or more Schottky diodes that are used as nonlinear semiconductor devices to generate harmonics out of the input signal and produce the multiplied output signal, stripline based output matching networks for transmitting the output signal from the Schottky diodes to an output antenna, and an output antenna (E-probe) for transmitting the output signal off the chip into the output waveguide transmission line.

Siles Perez, Jose Vicente↗
NASA NTRS2006

THz multiplier circuits

Planar Schottky diode technology has been utilized to fabricate high-power broad-band monolithic multiplier circuits that can produce appreciable power well into the THz range. The chip fabrication technology that has been developed allows for robust circuit designs that can be easily packaged in conventional waveguide blocks. An overview of the capability of GaAs based Schottky diode multipliers will be presented.

Maestrini, A.↗
NASA NTRS2018

High Power W-Band/F-Band Schottky Diode Based Frequency Multipliers

A solid state device chip including diodes (generating a higher frequency output through frequency multiplication of the input frequency) and a novel on-chip power combining design. Together with the on-chip power combining, the chip has increased efficiency because the diodes' anodes, being micro-fabricated simultaneously on the same patch of a GaAs wafer under identical conditions, are very well balanced. The diodes' GaAs heterostructure and the overall chip geometry are designed to be optimized for high power operation. As a result of all these features, the device can generate record-setting power having a signal frequency in the F-band and W-band (30% conversion efficiency).

Siles Perez, Jose Vicente↗
NASA NTRS2002

THz frequency multiplier chains base on planar Schottky diodes

The Herschel Space Observatory (HSO), an ESA cornerstone mission with NASA contribution, will enable a comprehensive study of the galactic as well as the extra galactic universe. At the heart of this exploration are ultra sensitive coherent detectors that can allow for high-resolution spectroscopy. Successful operation of these receivers is predicated on providing a sufficiently powerful local oscillator (LO) source. Historically, a versatile space qualified LO source for frequencies beyond 500 GHz has been difficult if not impossible. This paper will focus on the effort under way to develop, build, characterize and qualify a LO chain to 1200 GHz (Band 5 on HSO) that is based on planar GaAs diodes mounted in waveguide circuits. State-of-the-art performance has been obtained from a three-stage ( x2 x 2 x 3 ) multiplier chain that can provide a peak output power of 120 uW (1178 GHz) at room temperature and a peak output power of 190 uW at 1183 GHz when cooled to 113 K. Implementation of this LO source for the Heterodyne Instrument for Far Infrared (HIFI) on HSO will be discussed in detail.

oscillator spectroscopy↗
NASA NTRS2016

THz Limb Sounder (TLS) for Lower Thermospheric Wind, Oxygen Density, and Temperature

Neutral winds are one of the most critical measurements in the lower thermosphere and E region ionosphere (LTEI) for understanding complex electrodynamic processes and ion-neutral interactions. We are developing a high-sensitivity, low-power, noncryogenic 2.06 THz Schottky receiver to measure wind profiles at 100-140 km. The new technique, THz limb sounder (TLS), aims to measure LTEI winds by resolving the wind-induced Doppler shift of 2.06 THz atomic oxygen (OI) emissions. As a transition between fine structure levels in the ground electronic state, the OI emission is in local thermodynamic equilibrium(LTE) at altitudes up to 350km. This LTE property, together with day-and-night capability and small line-of-sight gradient, makes the OI limb sounding a very attractive technique for neutral wind observations. In addition to the wind measurement, TLS can also retrieve [OI] density and neutral temperature in the LTEI region. TLS leverages rapid advances in THz receiver technologies including subharmonically pumped (SHP)mixers and Schottky-diode-based power multipliers. Current SHP Schottky receivers have produced good sensitivity for THz frequencies at ambient environment temperatures (120-150 K), which are achievable through passively cooling in spaceflight. As an emerging technique, TLS can fill the critical data gaps in the LTEI neutral wind observations to enable detailed studies on the coupling and dynamo processes between charged and neutral molecules.

wind profiles↗
NASA NTRS1992

Frequency multipliers for millimeter and submillimeter wavelengths

All-solid-state local oscillators in the terahertz frequency range are especially needed for space-borne radio astronomy and remote sensing of the atmosphere. Because solid-state oscillators cannot yet produce the necessary local oscillator power at submillimeter wavelengths, frequency multipliers are needed. So far, submillimeter-wave frequency multipliers are mainly based on a whisker-contacted Schottky diode as the nonlinear element. This paper discusses the multiplier theory and tools for analysis and design of millimeter- and submillimeter-wave multipliers. Experimental work is reviewed. The Schottky diode model at submillimeter frequencies, use of Schottky multiplier chains versus direct higher-order multipliers, and the effect of cooling on Schottky diode multipliers are discussed. Alternative diodes such as the high electron mobility varactor, the barrier-intrinsic n(+) diode, the barrier-n-n(+) diode, the quantum well diode, and the single barrier varactor are discussed, with attention also given to their potential as submillimeter frequency multipliers.

Raisanen, Antti V.↗
NASA NTRS1992

A Schottky/2-DEG varactor diode for millimeter and submillimeter wave multiplier applications

A new Schottky diode is investigated for use as a multiplier element in the millimeter and submillimeter wavelength regions. The new diode is based on the Schottky contact at the edge of a 2-dimensional electron gas (2-DEG). As a negative voltage is applied to the Schottky contact, the depletion layer between the Schottky contact and the 2-DEG expands and the junction capacitance decreases, resulting in a nonlinear capacitance-voltage characteristic. In this paper, we outline the theory, design, fabrication, and evaluation of the new device. Recent results include devices having cutoff frequencies of 1 THz and above. Preliminary multiplier results are also presented.

Peatman, W. C. B.↗
NASA NTRS1992

A 200 GHz tripler using single barrier varactor

The GaAs Schottky varactor diode is the nonlinear device most commonly used for submillimeter wave harmonic generation. Output power adequate to serve as a local oscillator source for SIS tunnel junctions has been demonstrated with whisker-contacted GaAs Schottky varactor multipliers in waveguide mounts up to about 800 GHz. In this paper, we present results for a tripler to 200 GHz using a new multiplier device, the single barrier varactor (SBV). This new varactor has a potential advantages such as stronger nonlinearities or special symmetry, which make it attractive for submillimeter wave frequency multiplication. The performance of a tripler using a SBV over a output frequency range from 186 to 207 GHz has been measured in a crossed waveguide mount. The theoretical performance of the device has been calculated using large signal analysis. A comparison of theoretical and measured results and a discussion of various losses in the mount and the varactor have also been presented.

Choudhury, Debabani↗
NASA NTRS1993

A 200 GHz tripler using a single barrier varactor

The GaAs Schottky varactor diode is the nonlinear device most commonly used for submillimeter wave harmonic generation. Output power adequate to serve as a local oscillator source for SIS tunnel junctions has been demonstrated with whisker-contacted GaAs Schottky varactor multipliers in waveguide mounts up to about 800 GHz. In this paper, we present results for a tripler to 200 GHz using a new multiplier device, the single barrier varactor (SBV). This new varactor has potential advantages such as stronger nonlinearities or special symmetry, which make it attractive for submillimeter wave frequency multiplication. The performance of a tripler using a SBV over a output frequency range from 186 to 207 GHz has been measured in a crossed waveguide mount. The theoretical performance of the device has been calculated using large signal analysis. A comparison of theoretical and measured results and a discussion of various losses in the mount and the varactor have also been presented.

Choudhury, Debabani↗
NASA NTRS2002

THz local oscillator sources: performance and capabilities

Frequency multiplier circuits based on planar GaAs Schottky diodes have made significant advances in the last decade. Useful power in the >1 THz range has now been demonstrated from a complete solid-state chain. This paper will review some of the technology responsible for this achievement along with presenting a brief look at future challenges.

Schottky diode multipliers↗
NASA NTRS1992

All-solid-state radiometers for environmental studies to 700 GHz

We report results with an all-solid-state radiometer for measurements of the ClO molecule at 649 GHz. The project is part of a program to provide low-noise, low-weight, low-power radiometers for space operation, and special effort has been expended on the development of high-efficiency solid-state frequency multipliers and Schottky-barrier mixers with low local oscillator power requirements. The best measured system noise temperature was 1750 K with the mixer and preamplifier cooled to 77 K. The mixer diode was easily pumped into saturation, indicating that the design has excellent prospects of operating at higher frequencies - our present design goal being 1 THz. We comment on the principal design features of such systems and will report on stratospheric measurements performed with this system.

Zimmermann, Ralph↗
NASA NTRS1996

Recent progress in submillimeter heterodyne receiver development

The progress made in relation to the development of sensitive submillimeter heterodyne receiver systems is reviewed. Sensitive superconductor-insulator-superconductor (SIS) tunnel junction mixers were demonstrated at frequencies of greater than 1 THz, with noise temperatures of below 1000 K. An alternative mixer technology is that of the superconducting hot electron bolometer, for which sensitivities of 1.2 THz and 2.5 THz were demonstrated. Local oscillator technology is under development. Gunn oscillators followed by Schottky varactor frequency multipliers have sufficient output power to drive SIS mixers at 1 THz. It is considered that optical photomixer local oscillators have potential for driving hot electron bolometers above 1 THz.

Zmuidzinas, J.↗