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At least 37 records · Page 2

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DOE OSTI2024

Solid state protective smart plug device

A wireless-controlled smart plug device and methods of use and operation, using a solid state switch to provide electrical power from an outlet to a load, and provide protection against overload, short circuit, ground, arc, or voltage surge faults. The switch includes a bidirectional semiconductor switch with two back-to-back connected transistors, such as silicon power MOSFETs, silicon insulated-gate bipolar transistors (IGBTs), silicon carbide (SiC) transistors, or gallium nitride (GaN) transistors, each configured to control the current flow from the electrical receptacle to the external electrical load.

Shen, Zheng↗

DOE OSTI2021

Interleaved multi-channel, multi-level, multi-quadrant DC-DC converters

Direct-current-to-direct-current (DC-DC) power converters that include two or more multi-quadrant, multi-level, DC-DC, switching converter subcircuits, connected in parallel at respective input and output sides, so as to provide a multi-channel, multi-quadrant, multi-level configuration, are disclosed. The DC-DC power converters further include a control circuit configured to control the switching converter subcircuits so that corresponding switching semiconductors in each of the switching converter subcircuits are switched in an interleaved manner. In some embodiments, each of the switching converter subcircuits is a three-level, neutral-point-clamped, four-quadrant DC-DC converter circuit. In other embodiments, each of the switching converter subcircuits is a three-level, neutral-point-clamped, two-quadrant DC-DC converter circuit. In any of these embodiments, a filter capacitor may be connected between across a pair of output terminals at the output sides of the switching converter subcircuits.

Du, Yu↗

DOE OSTI2026

Ultrafast vertical photoconductive intrinsic diamond switch with high current (17.1 A at 1 kV)

Here, this Letter reports on a vertical, bulk-conducting photoconductive semiconductor switch (PCSS) fabricated on an intrinsic Type IIa single-crystal diamond substrate. Under near-bandgap excitation at 225 nm with a 20 μ J pulse, a strong photocurrent response of 17.1 A at 1 kV DC bias magnitude is obtained by (i) tuning the optical trigger wavelength to the “matched-absorption” window (224–235 nm) near the band edge, where the optical penetration depth becomes comparable to the 500 μ m substrate thickness, and (ii) choosing the bias polarity ensuring electron-dominant conduction, given that electrons have a higher mobility than holes in diamond. The PCSS has an area-normalized responsivity of 54.2 mA W −1 cm −2 and an effective on-resistance of 8.48 Ω, with a fast 90%–10% transient fall time of 25 ns, attributed to carrier sweep-out. These results support vertical, bulk-conducting intrinsic diamond PCSS as a promising platform for high-power optical switching and provide new insight into intrinsic photoconductivity in diamond.

24 POWER TRANSMISSION AND DISTRIBUTION↗

DOE OSTI2020

Modular, multi-channel, interleaved power converters

A multi-phase power converter includes two or more multi-phase, bi-directional, multi-level, switching power converter subcircuits, connected in parallel at respective AC and DC sides, so as to provide a multi-channel, bi-directional, multi-level configuration. The AC sides of the switching converter subcircuits are directly coupled to one another and to a multi-phase AC input via series interface reactors, and the DC sides of the switching converter subcircuits are directly connected to one another and to a common split-capacitor bank at each level of the multi-level outputs of the switching converter subcircuits. A control circuit is configured to selectively control one or more switching semiconductor devices in each of the switching converter subcircuits. In some embodiments, the control circuit includes a closed-loop zero-sequence controller and a zero-sequence generator configured to eliminate circulating current among the switching converter subcircuits and to balance voltages across levels of the common split-capacitor bank.

24 POWER TRANSMISSION AND DISTRIBUTION↗

DOE OSTI2021

Electronic assembly having sectional thermal management

The first board section comprises a switching module with heat-generating semiconductor switches associated with a first operational temperature range. The first board section has a first conductive layer of a first thickness. The second board section comprises a plurality of capacitors mounted on a second circuit board. The second board section has conductive traces for interconnecting the capacitors as a network. The capacitors are associated with a second operational temperature range that is lower than the first operational temperature range. A thermal isolation intermediary forms a barrier between, or adjoining, the first board section and the second board section, where the first board section and the second board section are spaced part from each other by the thermal isolation intermediary.

Schmit, Christopher J.↗

DOE OSTI2025

Evaluating switch lifetime in soft-switched single-stage differential-mode SST

The reliability of semiconductor switches in single-stage differential-mode solid-state transformers (DM-SSTs) has not been systematically evaluated under soft-switching operation and realistic grid conditions. This paper presents a switch-level reliability analysis for soft-switched and hard-switched DM-SST configurations by integrating converter-specific power loss modeling with empirical lifetime prediction. Analytical derivation of device current profiles specific to the DM-SST is used to characterize electrothermal stress, which is then mapped to lifetime using degradation models obtained from power cycling tests (PCTs). Applied to realistic SST load profiles and grid voltage variations, this approach provides a probabilistic prediction of switch lifetime for the DM-SST. Lifetime estimates for both SiC MOSFETs and Si IGBTs are presented, offering insight into device degradation under converter operating conditions. The results quantify the reliability benefits of soft switching in single-stage SSTs, highlighting how switching dynamics influence long-term switch degradation.

14 SOLAR ENERGY↗

DOE OSTI2023

PV Inverter Systems Enabled by Monolithically Integrated SiC based Four Quadrant Power Switch (4-QPS) [BiDFET]

The purpose of this project was to develop a new breed of Power Conversion Systems (PCS) for PV integration that is enabled by the newly developed 4-Quadrant Single Die SiC Power Semiconductor Switches (4-QPS) or also referred to as “Bidirectional FET (BIDFET)”. This work includes semiconductor die development, advanced packaging, converter design, development, and testing of 4-QPS enabled hardware prototypes at 1 kW (for single phase residential application) and 10 kW (for three phase commercial application). The BiDirectional Field-Effect Transistor (BiDFET) can enable circuit topologies requiring four-quadrant switches, that were earlier designed using discrete combinations of MOSFETs, IGBTs, GaN HEMTs, and PiN diodes. The monolithic nature of the BiDFET allows lower device count, smaller switch volume, lower inductance, and simpler packaging, and hence more reliable and commercially viable implementation in power electronics converters. The matrix converter topologies, now feasible using BiDFETs, can eliminate the bulky and unreliable dc link capacitors or inductors required for conventional voltage-source or current-source converters in ac–ac and ac–dc applications. The 1.2 kV BiDFET has the potential to disrupt all the applications utilizing 1.2 kV switches, including electric vehicle (EV) drivetrain, bidirectional EV chargers, industrial motor drives, solid-state transformers, datacenter power supplies, elevator drives, dc microgrids, energy storage grid integration, solid-state breakers, etc.

24 POWER TRANSMISSION AND DISTRIBUTION↗

DOE OSTI2020

Photoconductive Switch with High Sub-Bandgap Responsivity in Nitrogen-Doped Diamond

To evaluate nitrogen-doped diamond as a candidate for Photoconductive Semiconductor Switches (PCSS) triggered in the sub-bandgap visible range, we have fabricated and tested diamond PCSS from a set of diamond grades of varying nitrogen concentration. The nitrogen-doped diamond PCSS have higher responsivity than other diamond optoelectronic devices in the visible range. We present a novel demonstration of sub-bandgap triggered diamond PCSS, which when scaled to higher voltage, can compete with and even surpass performance of existing ultraviolet-triggered diamond PCSS. This work suggests that nitrogen-doped diamond is a promising candidate for high-power, fast optoelectronic devices.

36 MATERIALS SCIENCE↗

DOE OSTI2025

Design and Fabrication of a Thyristor Using Ion Implantation of Anode and Cathode

A thyristor is a solid-state semiconductor switch made up of four alternating p and n type layers. When the switch is turned on by a small pulse, current can flow as long as the device stays on. When the voltage drops below the turn on level or the current reverses, the switch will turn off. Thyristors only allow current to flow in one direction. One of the benefits of a thyristor device is in its capacity to conduct large voltages with a small device and a small turn-on pulse requirement. Another distinguishing feature of thyristors compared to other semiconductor devices is that it can only be in the on or off state, there’s no in-between state for the device to exist within. These properties make thyristors very useful as switch devices, especially in applications where current flow is only needed in one direction and could potentially be damaging in the opposite direction. Currently, thyristors are most commonly used to control very high power loads and they are available commercially in many designs to control different amounts of current.

42 ENGINEERING↗

DOE OSTI2023

Recent Advancements in Reconfigurable mmWave Devices Based on Phase-Change and Metal Insulator Transition Materials

Chalcogenide Phase Change Materials (PCM) and metal insulator transition (MIT) materials are a group of materials that are capable of switching between low resistance and high resistance states. These emerging materials have been widely used in optical storage media and memory devices. Over the past recent years, there have been interests in exploiting the PCM and MIT materials, especially germanium antimony telluride (GST) alloys and vanadium dioxide (VO 2 ), for radio frequency (RF) applications. The PCM and MIT-based RF devices are expected to bridge the gap between semiconductor switches and microelectromechanical system (MEMS) switches as they combine the low insertion loss performance of MEMS technology and the small size and reliability performance of semiconductor technology. This article presents an overview of the PCM and MIT materials for RF circuits and discusses the recent advancements in reconfigurable millimeter-wave (mmWave) devices based on PCM and MIT materials in depth.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Novel, Middle and Long Wave Infrared Laser Sources For Accelerator Applications

The main accomplishment during Years 2020-2024 of the DOE Accelerator Stewardship Program is proof-of-principle demonstration of amplification of an ultrashort 10 µm seed pulse in a multiatmosphere CO 2 laser optically pumped by nanosecond pulses of either a ~4.3 µm Fe:ZnSe laser or a 2.8 µm electro-optically (EO) Q-switched Er: Laser. This has been accomplished at the UCLA Neptune Laboratory by using about 100 mJ, ~100 ns long pulses generated by the pump laser built for this purpose by the UAB team. Implementation of EO Q-switching regime in the solid-state Er:laser system made possible nanosecond synchronization between the pump pulse and the 0.5 ps seed pulse produced by a commercial Ti:sapphire laser based mid-IR OPA/DFG. The injection mode-locking regime realized in a compact Mult atmosphere 3 Hz CO 2 -He regenerative amplifier enabled generation of a train of ultrashort pulses separated by the cavity round-trip time of ~3.2 ns. The measured gain lifetime of ~1 µs at a total pressure of ~12-15 atm indicates that lifetime of the upper laser level is a critical limiting factor in designing high-pressure CO 2 amplifiers. A single picosecond 10 mm pulse with an energy 0.1-0.2 mJ was extracted from the amplifier’s cavity using an ultrafast Ge semiconductor switch whose reflectivity was photo-induced by a femtosecond 800 nm pulse. For direct amplification regime, nonlinear absorption in Ge at 10 mm at GW/cm 2 intensities limited the extracted energy. Therefore, the generated energy could be further increased by minimizing losses in the switch and optimizing the cavity mode size. Based on the obtained data in collaboration with BNL colleagues, we have designed a high-pressure CO 2 amplifier to be used as a preamplifier for the future experiments at the ATF BNL. The latter work is the subject of funding availability.

60 APPLIED LIFE SCIENCES↗

DOE OSTI2022

A Tri-Port Current-Source Soft-Switching Medium-Voltage String Inverter for Large-Scale Solar-Plus-Storage Farms

This article presents a tri-port current-source soft-switching medium-voltage string inverter (TMVSI) to reduce the Levelized cost of energy (LCOE) of large-scale solar-plus-storage (SPS) farms. Throughout this work, the topology, operating principle, circuit simulation, control, and hardware design of the TMVSI are introduced. In addition, three key challenges compromising the performance of the TMVSI are addressed in this article. First, a new feed-forward compensation for model predictive control of the TMVSI is proposed to compensate for sampling and computational delay and high dc-link ripple with low computational cost and high scalability. Second, the use of laminated permanent magnets is proposed to reduce the losses of the MV medium-frequency transformer (MFT) in the TMVSI while increasing its saturation current. Finally, an improved U-shape winding pattern is proposed to decrease the leakage inductance of the MV MFT and reduce the voltage stress across semiconductor switches without adding cost or complexity. Here, the effectiveness of the TMVSI is validated by experiments at up to 20kW/500V in different test cases with custom-built prototypes. The contributions of this work make the TMVSI a viable solution to SPS farms and unleash its potential for LCOE reduction.

14 SOLAR ENERGY↗

DOE OSTI2025

Cryogenically enhanced quasi-optical resonator for megawatt pulsed millimeter-wave sources

We report the design, cryogenic optimization, and performance modeling of a compact quasi-optical ring resonator intended to compress microwaves pulses at 170 and 250 GHz to the megawatt level. By combining ultra-low-loss CVD diamond and gold-doped silicon wafers with high-RRR copper mirrors, the calculated unloaded quality factor exceeds 4.3 × 10 5 at 20 K and yields simulated gains up to $\mathscr{G}$ = 4.1 × 10 3 . Coupling the resonator with a laser-driven semiconductor switch described by an extended Vogel model shows that 1 MW, nanosecond pulses can be generated from only 445 W of microwave drive power while dissipating 272 W into the cryostat. A practical cooling architecture using two Gifford–McMahon stages (20 and 80 K) is proposed, demonstrating that high-repetition-rate (10–20 kHz) operation is feasible with commercially available cryocoolers. The results outline a clear path toward cost-effective, table-top sources for extreme-ultraviolet lithography, dynamic nuclear polarization, and fusion systems.

Panisset, Constant [Ecole Polytechnique Federale L↗

DOE OSTI2024

A Compact, Single Stage, >1 kV Medium-Voltage Line Impedance Stabilization Network

This paper presents the design of a single-phase, single-stage line impedance stabilization network (LISN) for medium-voltage (MV) applications. More than 1 kV rated widebandgap (WBG) power semiconductor switches are increasingly utilized in new, emerging power electronics energy systems to improve power density and efficiency. However, due to inherently fast-switching speeds, WBG switch modules emit considerable electromagnetic interference (EMI) (e.g., common mode (CM) or differential mode (DM)). State-of-the-art offers standardized LISN solutions to validate and certify the new energy system for electromagnetic compatibility (EMC). However, most are for low voltage applications (i.e., < 1 kV). MV LISNs (i.e., > 1 kV) are rare until recently and literature does not provide sufficient guidelines for designing and characterizing such devices. It has been a critical challenge for many scientists and engineers to reliably certify the emerging MV energy systems (e.g., electric ships and aircraft). This paper addresses such a technology gap. Specifically, a CISPR 16-1-2 compliant 50Ω/50μH LISN with 1.5kV, 75A and 30MHz measurement capability has been proposed. Detailed performance study versus non-linear parasitic parameters variations in MV inductors and capacitors have been done. Based on new understandings, novel techniques to intuitively mitigate unwanted parasitic have been proposed to develop the proposed LISN successfully. Thorough characterization of important LISN parameters are presented and factors influencing them are analyzed. A rigorous analysis, experimental tests, and in-depth comparisons over state-of-the-art have been made to validate the effectiveness. This is done through the state-of-the-art 300kVA MV EMI testbed.

42 ENGINEERING↗

DOE OSTI2024

ARC-SAFE: Accelerated Response semiconducting Contactors and Surge Attenuation For DC Electrical systems (Final Scientific/Technical Report)

The landscape of power transmission and distribution is quickly evolving as more power conversion is done through power electronics and transmitted or distributed at medium voltage direct current (MVDC). As power electronics tend to store less energy and be less resilient to faults than conventional power transformers, a reliable and fast protection against faults is critical to protect power electronics (PE) based infrastructure, especially for medium- and high-voltage applications. This motivates the development of PE based protection circuits to replace slower contemporary electromechanical breakers. In this project a novel PE based MVDC circuit breaker is developed; the new design is comprised of 1) a normally-on leg made of commercially-available, cascaded SiC junction field effect transistors (JFETs) with a passive balancing network, and 2) a normally-off leg based on an optically-triggered gallium nitride (GaN) photoconductive semiconductor switch (PCSS). The normally-off leg was designed to be quickly turned on, to divert current to an auxiliary dissipative circuit, as the normally-on leg is turned off. This approach, using solid-state devices, was selected for a high-performance, fast-switching operation for the DC circuit breaker as compared to approaches that use slower mechanical switches. To be practical, the circuit breaker must have low conduction loss (low Ron) in the normally-on leg and fast coordinated triggering of the normally-off leg to avoid damage from inductive flyback, which could be considerable for long lengths of cable.

24 POWER TRANSMISSION AND DISTRIBUTION↗

DOE OSTI2024

A Review on Protection Challenges on Transmission Lines Connected to Inverter Based Resources

The increased penetration of inverter-based resources (IBRs) connected to transmission grids is challenging how traditional electric power systems operate. Such systems were originally designed based on the dominant presence of synchronous generators. Some main challenges include the increased concerns about system stability due to the reduced system inertia caused by IBRs and the reduced protection reliability caused by the non-deterministic fault current response of IBRs. The protection relays’ algorithms have been designed and validated based on well-known fault current characteristics of synchronous generations, while the short-circuit responses of IBRs heavily depend on their vendor-specific control schemes, which are mainly set to protect inverter semiconductor switches and DC components. The magnitude of short current that IBRs contribute is typically between 1.1–1.5 times the rated current that may behave unstably and incoherently with the voltages. The control scheme of the IBRs also controls the active (P) and reactive (Q) support during system voltage sag and swell conditions. These characteristics challenge not only protective relay schemes but also existing short-circuit software tools to correctly model IBRs for fault studies and protection coordination analyses. Utilities, university researchers, research institutes, and relay manufacturers have performed studies to investigate different aspects of high IBR penetration. Almost all studies support 1) creating international and national standards to regulate the IBRs, 2) revising engineering tools to address shortcomings, and 3) adjusting the protective relay settings to resolve protection problems. This paper summarizes the studies and research conducted in recent years to quantify the impact of IBR penetration on transmission line protection and to identify potential solutions to improve the dependability and reliability of grid protection systems.

14 SOLAR ENERGY↗

DOE OSTI2024

A review on protection challenges of Transmission Lines connected to Inverter Based Resources

14 SOLAR ENERGY↗

DOE OSTI2026

Ultra Wide Bandgap Laser Addressable Photoconductors

Wide Band Gap (WBG) and Ultra Wide Band Gap (UWBG) photoconductors have the potential to meet several critical mission needs for LLNL and the broader USG due to their exceptional characteristics related to large critical electric field. In particular, high energy laser systems such as the National Ignition Facility would benefit from the development of new materials for active optical devices such as the Optically Addressable Light Valve (OALV) used in the Programmable Spatial Shaper System. Missions in Global Security would benefit from higher performance Photoconductive Semiconductor Switches for pulsed power and radiofrequency amplifiers. This project examined the suitability of both commercially available and custom synthesized semi insulating WBG and UWBG materials for several of these applications. We developed high laser damage threshold OALVs for optical systems based on several of these materials as well as new RF, pulsed power, and power electronics devices based on the same. These devices show superior power handling in terms of laser damage threshold, electric field, and power output. A number of the technologies developed have been transitioned to both internal and external customers.

42 ENGINEERING↗