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At least 37 records · Page 2

Effect of Tilt Angle on the Morphology of SiC Epitaxial Films Grown on Vicinal (0001) SiC Substrates

In this study of 4H-SiC and 6H-SiC epitaxial films we found that film morphology was strongly dependent on the tilt angle of the substrate. Large surface steps (up to 25 nm high) due to step bunching were more prevalent at smaller tilt angles. Also, 4H films were more susceptible than 6H to 3C-SiC inclusions during growth. The lateral growth of steps from screw dislocations in low-tilt-angle substrates demonstrated that step bunching on the atomic scale was anisotropic with respect to growth direction for both 4H-SiC and 6H-SiC. A model explaining this behavior is presented. We observed and directly measured the Burgers vector of a 'super' screw dislocation in a 6H-SiC epilayer.

Powell, J. A.↗

Thermomechanical Performance of C and SiC Multilayer, Fiber-Reinforced, CVI SiC Matrix Composites

Hybrid fiber approaches have been attempted in the past to alloy desirable properties of different fiber-types for mechanical properties, thermal stress management, and oxidation resistance. Such an approach has potential for the CrSiC and SiCrSiC composite systems. SiC matrix composites with different stacking sequences of woven C fiber (T300) layers and woven Sic fiber (Hi-NicalonTM) layers were fabricated using the standard CVI process. Delamination occurred to some extent due to thermal mismatch for all of the composites. However, for the composites with a more uniform stacking sequence, minimal delamination occurred, enabling tensile properties to be determined at room temperature and elevated temperatures (stress-rupture in air). Composites were seal-coated with a CVI SiC layer as well as a proprietary C-B-Si (CBS) layer. Definite improvement in rupture behavior was observed in air for composites with increasing SiC fiber content and a CBS layer. The results will be compared to standard C fiber reinforced CVI SiC matrix and Hi-Nicalon reinforced CVI SiC matrix composites.

Morscher, Gregory N.↗

Measurements of Breakdown Field and Forward Current Stability in 3C-SiC P-N Junction Diodes Grown on Step-Free 4H-SiC

This paper reports on initial fabrication and electrical characterization of 3C-SiC p-n junction diodes grown on step-free 4H-SiC mesas. Diodes with n-blocking-layer doping ranging from approx. 2 x 10(exp 16)/cu cm to approx.. 5 x 10(exp 17)/cu cm were fabricated and tested. No optimization of junction edge termination or ohmic contacts was employed. Room temperature reverse characteristics of the best devices show excellent low-leakage behavior, below previous 3C-SiC devices produced by other growth techniques, until the onset of a sharp breakdown knee. The resulting estimated breakdown field of 3C-SiC is at least twice the breakdown field of silicon, but is only around half the breakdown field of <0001> 4H-SiC for the doping range studied. Initial high current stressing of 3C diodes at 100 A/sq cm for more than 20 hours resulted in less than 50 mV change in approx. 3 V forward voltage. 3C-SiC, pn junction, p+n diode, rectifier, reverse breakdown, breakdown field,heteroepitaxy, epitaxial growth, electroluminescence, mesa, bipolar diode

Neudeck, Philip G.↗

Growth of Defect-Free 3C-SiC on 4H- and 6H-SiC Mesas Using Step-Free Surface Heteroepitaxy

A new growth process, herein named step-free surface heteroepitaxy, has achieved 3CSiC films completely free of double positioning boundaries and stacking faults on 4H-SiC and 6H-SiC substrate mesas. The process is based upon the initial 2-dimensional nucleation and lateral expansion of a single island of 3C-SiC on a 4H- or 6H-SiC mesa surface that is completely free of bilayer surface steps. Our experimental results indicate that substrate-epilayer in-plane lattice mismatch (delta a/a = 0.0854% for 3C/4H) is at least partially relieved parallel to the interface in the initial bilayers of the heterofilm, producing an at least partially relaxed 3C-SiC film without dislocations that undesirably thread through the thickness of the epilayer. This result should enable realization of improved 3C-SiC devices.

Neudeck, Philip G.↗

Mechanical properties of fusion welded ceramics in the $\mathrm{SiC-ZrB}$ 2 and $\mathrm{SiC-ZrB}$ 2 -$\mathrm{ZrC}$ systems

Mechanical properties of welded SiC-ZrB 2 and SiC-ZrB 2 -ZrC ceramics were measured up to 1700 °C. Commercial powders were hot pressed, machined into coupons, and preheated to 1600 °C before joining the ceramics using either tungsten inert gas welding or plasma arc welding. Toughness of the parent materials was 3–4 MPa*m 1/2 which decreased after welding to 2–2.5 MPa*m 1/2 . Strength of the SiC-ZrB 2 -ZrC parent material was ~700 MPa at 25 °C, ~300 MPa at 1700 °C, and retained 40–60% of this strength once welded. Strength of the SiC-ZrB2 parent material was ~600 MPa at 25 °C and 1700 °C and retained 20–30% of this strength once welded. Griffith analysis indicated that the strength in the parent materials was controlled by the size of SiC clusters while strength of welds was controlled by the size of pores in fusion zones. Therefore, removal of pores in produced fusion zones should be investigated to improve strength of future ceramic welds.

36 MATERIALS SCIENCE↗

TRISO SiC Failure Probability for Reactivity Initiated Accidents in High-Temperature Gas-Cooled Reactors

This work analyzes the failure process of the silicon carbide (SiC) layer in tristructural isotropic (TRISO) during reactivity-initiated accident scenarios for a high-temperature gas-cooled reactor (HTGR) with BISON. Two cases are considered—a group control rod withdrawal (CRW) and a control rod ejection (CRE)—reproduced from a previous study. Failure probability is modeled using Weibull statistics, and worst-case scenario Weibull parameters are adopted to simulate the envelopes in BISON with a one-dimensional TRISO model. CRW scenario results are characterized by higher values of maximum energy deposition and final temperature and volumetric strain with respect to the CRE ones, but the latter have remarkably higher SiC failure probability, mainly due to the offset in strain rates between the two cases. This work also confirms the validity and conservatism of the performance envelopes produced in a previous work by replicating the envelope formulation using RELAP5-3D and RAVEN with a different sampling technique and obtaining consistent results. A sensitivity analysis using the Sobol variance decomposition method on SiC failure probability is then performed involving a set of inputs on both CRW and CRE. The two most important parameters are Weibull modulus and characteristic stress, and their relative importance depends on the specific case. The proposed interpretation of the results is that both energy deposition and strain rate influence the relative degree of importance of the failure parameters. Computation of 95% confidence intervals around worst-case scenario SiC failure probability values is also carried out for four different sets of Weibull parameters. Heren a new criterion for SiC TRISO quality classification built upon safety-based ranges of Weibull parameters is proposed to be integrated in future Fuel-Production Quality Assurance Plans.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

HFIR SiC-SiC Composite Clad Tube Bowing Test: Pre-Irradiation Characterization

This report describes the pre-irradiation characterization of the SiC-SiC composite clad tube bowing experiment that will be irradiated in the High Flux Isotope Reactor (HFIR). There are concerns that SiCSiC fuel cladding in light water reactors could undergo bowing because of the non-uniform fast neutron flux profiles. This experiment is combined with the SiC-SiC channel box experiment, which has similar concerns regarding control blade movements in boiling water reactors. The HFIR experiment aims to validate the predicted deformation and stresses in the composite clad specimen after the exposure of fast neutron flux gradients. Significant radial fast neutron flux gradients that exist in the permanent reflector of HFIR were thoroughly characterized by using detailed 3D neutronic calculations. The 3D displacement damage dose rate profile and the resulting volumetric swelling in SiC were used as inputs to structural analyses to determine the predicted deformation that will affect the specimens. The tube specimens were characterized by using traditional dimensional inspection and surface profilometry to provide detailed information regarding the pre-irradiation condition as the first step to evaluate the radiation-induced deformation. Furthermore, fine engraving markers were inscribed along all outer surfaces of the specimen and mapped by using a digital microscope and a multidimensional stage. This allows marker spacings to be accurately measured and compared with similar measurements that will be made post-irradiation to provide local radiation-induced strain mapping. The experiment successfully completed two HFIR cycle irradiations, cycles 492 and 493, which finished on July 25, 2021.

21 SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS↗

Nitriding kinetics of Si-SiC powder mixtures as simulations of reaction bonded Si3N4-SiC composites

The nitriding kinetics of Si and Si plus SiC powder mixtures were studied to simulate the fabrication of RBSN-SiC ceramic matrix composites. Very clean, assynthesized, and solvent-exposed powders were studied; C-rich and Si-rich SiC 0.04-0.05 micron diameter powders were mixed in varying concentrations with SiH4-derived 0.2-0.3 micron diameter Si powder. Complete nitridation is achieved with C-rich SiC powders in 140 min at 1250 C, and in the centers of Si-rich SiC powders in 15 min. The effects on the incubation periods, fast reaction periods, and slow reaction periods that characterize these nitriding processes were studied to explain unusual reverse reaction gradients and other effects of contamination.

Lightfoot, A.↗

Growth of improved quality 3C-SiC films on 6H-SiC substrates

Previously reported chemical vapor deposition of 3C-SiC on 6H-SiC has resulted in films with a high density of double positioning boundaries (DPBs). It is found that growth on as-grow faces of 6H-SiC crystals can yield films that are largely free of DPBs. The (111) 3C-SiC films, up to 12 microns thick, were evaluated by optical and electron microscopy and low-temperature photoluminescence (LTPL). The LTPL spectra of the films were similar to those of high quality Lely-grown 3C-SiC.

Powell, J. A.↗

Evaluation of Additively Manufactured Monolithic SiC and SiC-Matrix Ceramic Matrix Composites for Concentrating Solar Receiver Applications - Fabrication and Testing of Receiver Design Feature Specimens in a Simulating Lab Test via Laser Heating

Increasing operating temperatures of solar receivers is paramount to the efficiency of concentrated solar thermal (CST) and solar power (CSP) systems. Owing to its high temperature stability combined with excellent thermal and optical properties, SiC has been the material of choice for application in high-temperature solar receivers. We report the results of our study of the effective heat transfer characteristics of several candidate SiC structure motifs, or feature geometries, which are fabricated via additive manufacturing. The SiC structure motifs studied include different permutations of three-dimensional periodic lattices and defined shapes. A solar-thermal simulating laboratory test setup is constructed using a 4kW CO2 laser system with beam shaping optics to apply concurrent radiative heating power on one face of 2”-diameter cylindrical feature specimens, representing the structure motifs of interest for receiver element design, while flowing through the sample as heat transfer fluid. Using the test setup, simulative test conditions representative of a concentrated solar flux of up to ~2000 suns could be achieved in the lab tests under varying air flow through the test structure. A simple 1D numerical analysis scheme is developed to extract an effective or compound heat transfer coefficient representative of the test structure under steady-state heat flow conditions. The test results and their use to guide the selection and optimization of SiC material and structure motifs for the receiver element design fabrication are discussed.

14 SOLAR ENERGY↗

Influence of weave architecture on mechanical response of SiC f -SiC m tubular composites

Due to their high resistance to radiation damage and elevated temperature, silicon carbide fiber-reinforced, silicon carbide matrix composites (SiC f -SiC m ) are identified as potential cladding structures for use in nuclear reactors. In this study, four composite architectures with varying ply numbers along the thickness direction and different biaxial or triaxial plain weave orientations at either 45° or 60°, were systematically evaluated under various stress states to assess the influence of weave architecture on mechanical performance. Experiments were conducted on SiC f -SiC m composite tubes under tensile hoop, axial compression, and rotating flexural loading to evaluate the mechanical response and investigate the failure modes using high-speed imaging and digital image correlation (DIC) techniques. It was found that for tensile hoop burst and flexural loading, the braiding angle had the most significant influence on the strength of the composite, whereas the effect of fiber angle was more limited for compression testing. Under axial compression a unique failure mode where a microcrack nucleates and grows only to a length equal to the thickness of a single yarn was identified. This crack growth behavior is reflected as periodic oscillations in the load-displacement response. For both axial and hoop loading, regardless of weave angle and number of plies, failure always initiated parallel to the tube axis in a single yarn and the cumulative interaction of these microcracks lead to either axial burst or fracture at an angle to the tube axis along a yarn. Furthermore, these results point to the importance of customizing the design of tube architecture for enhanced performance in specified nuclear applications.

36 MATERIALS SCIENCE↗

A study of metal-ceramic wettability in SiC-Al using dynamic melt infiltration of SiC

Pressure-assisted infiltration with a 2014 Al alloy of plain and Cu-coated single crystal platelets of alpha silicon carbide was used to study particulate wettability under dynamic conditions relevant to pressure casting of metal-matrix composites. The total penetration length of infiltrant metal in porous compacts was measured at the conclusion of solidification as a function of pressure, infiltration time, and SiC size for both plain and Cu-coated SiC. The experimental data were analyzed to obtain a threshold pressure for the effect of melt intrusion through SiC compacts. The threshold pressure was taken either directly as a measure of wettability or converted to an effective wetting angle using the Young-Laplace capillary equation. Cu coating resulted in partial but beneficial improvements in wettability as a result of its dissolution in the melt, compared to uncoated SiC.

Asthana, R.↗

An Insidious Mode of Oxidative Degradation in a SiC-SiC Composite

The oxidative durability of a SiC-SiC composite with Hi-Nicalon fiber and BN interphase was investigated at 800 C (where pesting is known to occur in SiC-SiC composites) for exposure durations of up to 500 hours and in a variety of oxidant mixes and flow rates, ranging from quasi-stagnant room air, through slow flowing O2 containing 30-90% H2O, to the high-velocity flame of a burner rig. Degradation of the composite was determined from residual strength and fracture strain in post-exposure mechanical tests and correlated with microstructural evidence of damage to fiber and interphase. The severest degradation of composite behavior was found to occur in the bumer rig, and is shown to be connected with the high oxidant velocity and substantial moisture content, as well as a thin sublayer of carbon indicated to form between fiber and interphase during composite processing.

Ogbuji, Linus U. J. T.↗

Stress-Dependent Matrix Cracking in 2D Woven SiC-Fiber Reinforced Melt-Infiltrated SiC Matrix Composites

The matrix cracking of a variety of SiC/SiC composites has been characterized for a wide range of constituent variation. These composites were fabricated by the 2-dimensional lay-up of 0/90 five-harness satin fabric consisting of Sylramic fiber tows that were then chemical vapor infiltrated (CVI) with BN, CVI with SiC, slurry infiltrated with SiC particles followed by molten infiltration of Si. The composites varied in number of plies, the number of tows per length, thickness, and the size of the tows. This resulted in composites with a fiber volume fraction in the loading direction that ranged from 0.12 to 0.20. Matrix cracking was monitored with modal acoustic emission in order to estimate the stress-dependent distribution of matrix cracks. It was found that the general matrix crack properties of this system could be fairly well characterized by assuming that no matrix cracks originated in the load-bearing fiber, interphase, chemical vapor infiltrated Sic tow-minicomposites, i.e., all matrix cracks originate in the 90 degree tow-minicomposites or the large unreinforced Sic-Si matrix regions. Also, it was determined that the larger tow size composites had a much narrower stress range for matrix cracking compared to the standard tow size composites.

Morscher, Gregory N.↗

Measured Attenuation of Coplanar Waveguide on 6H, p-type SiC and High Purity Semi-Insulating 4H SiC through 800 K

Wireless sensors for high temperature applications such as oil drilling and mining, automobiles, and jet engine performance monitoring require circuits built on wide bandgap semiconductors. In this paper, the characteristics of microwave transmission lines on 4H-High Purity Semi-Insulating SiC and 6H, p-type SiC is presented as a function of temperature and frequency. It is shown that the attenuation of 6H, p-type substrates is too high for microwave circuits, large leakage current will flow through the substrate, and that unusual attenuation characteristics are due to trapping in the SiC. The 4H-HPSI SiC is shown to have low attenuation and leakage currents over the entire temperature range.

Ponchak, George E.↗