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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Organic Direct-Bonded-Copper-Based Rapid Prototyping for Silicon Carbide Power Module Packaging

Silicon carbide (SiC) power devices are playing ever- growing roles in high-power-density power electronics converters by offering benefits such as high voltage rating, fast transients, and high thermal performance. Organic direct-bonded copper (ODBC)-based packaging, due to its ductility and ease of han- dling, allows the possibility of a more flexible layout design that may better tap the potential of SiC benefits. In this work, an ODBC-based prototyping routine is developed that accelerates the iterations of packaging layout design with low cost. The properties of ODBC and its handling are briefly introduced, and tools and fabrication steps are explained. Following this routine, a 1.2-kV SiC half-bridge power module is designed and fabricated with the focus on sub-nanohenry ultra-low loop inductance. Simulation and experimental validation are also conducted.

25 ENERGY STORAGE↗
DOE OSTI2023

Solution Processed Schottky Diodes Enabled by Silicon Carbide Nanowires for Harsh Environment Applications

Silicon carbide nanowires (SiC NWs) exhibit promising features to allow solution-processable electronics to be deployed in harsh environments. By utilizing a nanoscale form of SiC, we were able to disperse the material into liquid solvents, while maintaining the resilience of bulk SiC. Here, this letter reports the fabrication of SiC NW Schottky diodes. Each diode consisted of just one nanowire with an approximate diameter of 160 nm. In addition to analyzing the diode performance, the effects of elevated temperatures and proton irradiation on the current–voltage characteristics of SiC NW Schottky diodes were also examined. The device could maintain similar values for ideality factor, barrier height, and effective Richardson constant upon proton irradiation with a fluence of 10 16 ion/cm 2 at 873 K. As a result, these metrics have clearly demonstrated the high-temperature tolerance and irradiation resistance of SiC NWs, ultimately indicating that they may provide utility in allowing solution-processable electronics in harsh environments.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2020

Design and strategy for next-generation silicon carbide composites for nuclear energy

Silicon carbide (SiC) ceramic-based composites continue to be attractive material options for fusion in-vessel components and fission reactor core structures because of their exceptional high-temperature capability and favorable neutronic properties. As performance data accumulates, the limitations of the current generation of nuclear-grade SiC composites are becoming more apparent. These limitations mainly involve strength degradation during high-dose neutron irradiation. In this paper, we discuss several options for improving the performance of the next generation of SiC composites to enhance the radiation resistance, along with new experimental results on neutron irradiation resistance. The main emphasis is on the selection of the fibers and the design and development of alternative interphase layers for advanced composites.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2020

Quantification of silicon carbide grain structure in TRISO fuel by BSE image analysis

The grain structure of the silicon carbide (SiC) layer in tristructural-isotropic (TRISO) fuels has commonly been qualified in fuel specifications based on a qualitative comparison to visual standards to ensure undesirable microstructure are not produced. This approach is inherently dependent on subjective judgement and provides limited data for analysis or comparison. An alternative method to rapidly quantify (i.e., provide a numeric measure of) the grain structure of the SiC layer in TRISO fuels has been developed. This method relies on the identification of silicon carbide grain boundaries based on brightness variation in backscattered electron (BSE) images through the application of automated image processing algorithms. The speed with which the requisite BSE imaging and analysis may be completed enables the practical use of this method on an industrial scale as a part of qualifying TRISO fuel to meet a given specification on silicon carbide grain structure, which is an important parameter for TRISO fuel performance. The method is benchmarked by comparison to prior Electron-Backscattered Diffraction (EBSD) results for TRISO particles from the Advanced Gas Reactor (AGR) program.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2021

The Creation of True Two-Dimensional Silicon Carbide

This paper reports the successful synthesis of true two-dimensional silicon carbide using a top-down synthesis approach. Theoretical studies have predicted that 2D SiC has a stable planar structure and is a direct band gap semiconducting material. Experimentally, however, the growth of 2D SiC has challenged scientists for decades because bulk silicon carbide is not a van der Waals layered material. Adjacent atoms of SiC bond together via covalent sp3 hybridization, which is much stronger than van der Waals bonding in layered materials. Additionally, bulk SiC exists in more than 250 polytypes, further complicating the synthesis process, and making the selection of the SiC precursor polytype extremely important. This work demonstrates, for the first time, the successful isolation of 2D SiC from hexagonal SiC via a wet exfoliation method. Unlike many other 2D materials such as silicene that suffer from environmental instability, the created 2D SiC nanosheets are environmentally stable, and show no sign of degradation. 2D SiC also shows interesting Raman behavior, different from that of the bulk SiC. Our results suggest a strong correlation between the thickness of the nanosheets and the intensity of the longitudinal optical (LO) Raman mode. Furthermore, the created 2D SiC shows visible-light emission, indicating its potential applications for light-emitting devices and integrated microelectronics circuits. We anticipate that this work will cause disruptive impact across various technological fields, ranging from optoelectronics and spintronics to electronics and energy applications.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2022

Development of a silicon carbide ceramic based counter-flow heat exchanger by binder jetting and liquid silicon infiltration for concentrating solar power

A silicon carbide ceramic counter-flow heat exchanger with integrated headers was printed by binder jetting additive manufacturing process. Multiple phenolic binder infiltration cycles (3 or 5) followed by pyrolysis were conducted to increase the net carbon content of the printed SiC specimens. Subsequently, to attain full densification, silicon melt infiltration was used. The microstructure and mechanical properties were comprehensively characterized on the densified material. The chemical compositions and visual distribution of the various regions in the specimens were determined via scanning electron microscopy, while X-ray diffraction and synchrotron µ-computed tomography were used to provide a quantitative assessment of the volume fractions of the identified phase regions. Microhardness measurements showed dependence on the local microstructure. The fracture strength of the material was correlated with the specimen density and agreed with the reported values in the literature. High-temperature exposure at 750 °C for up to 200h did not degrade the strength for the specimens with three phenolic-binder infiltrations; however, the strengths degraded for ones with five phenolic-binder infiltrations. The associated fracture toughnesses of the specimens were ~3.4 MPam 1/2 at room temperature and 750°C, and the thermal conductivities varied from >150 W/mK at room temperature to ~45 W/mK at 750°C. Hence, this study validated the use of the binder-jetting printed SiC ceramic materials for high-temperature heat exchanges. Lastly, we also present in this work the first successful fabrication of a binder-jetting printed one-piece dense SiC ceramic heat exchanger body with unblocked channels that can be used for the flow of heat transfer fluids.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Single-Phase Jet Impingement Cooling for a Power-Dense Silicon Carbide Power Module

The adoption of silicon carbide (SiC) devices in the electric vehicle (EV) industry is increasing due to their superior performance over silicon devices. SiC devices enable further miniaturization of EV inverters, increasing their power density, which results in thermal management challenges. Here in this paper, the limits of single-phase jet impingement cooling are explored for an automotive SiC power module. We propose embedding pin fins in the direct-bonded-copper (DBC) substrate of the power module package using laser powder bed fusion additive manufacturing. The thermalhydraulic performance of the DBC-embedded pin fins is compared against folded fins that are directly soldered to the DBC substrate. A heat conduction analysis was conducted on a SiC package to determine the target heat transfer coefficient (HTC) for the heat sink. A water-ethylene glycol (WEG) jet impingement on the proposed concepts was studied using unit-cell models to achieve the target HTC. The studied designs put emphasis on the reliability and manufacturability requirements of the automotive industry. The thermal performance of DBC-embedded pin fins outperformed the DBC-soldered folded fins. The performance of the DBC-embedded pin fins is benchmarked against WEG-based cooling systems of commercial EVs. With the proposed cooling solution, we have shown a pathway of reducing the specific thermal resistance by 75% compared to BMW i3 thermal management system without any penalty on pressure drop or parasitic power.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2024

Multiscale Modeling of Silicon Carbide Cladding for Nuclear Applications: Thermal Performance Modeling

The complex multiscale and anisotropic nature of silicon carbide (SiC) ceramic matrix composite (CMC) makes it difficult to accurately model its performance in nuclear applications. The existing models for nuclear grade composite SiC do not account for the microstructural features and how these features can affect the thermal and structural behavior of the cladding and its anisotropic properties. In addition to the microstructural features, the properties of individual constituents of the composites and fiber tow architecture determine the bulk properties. Models for determining the relationship between the individual constituents’ properties and the bulk properties of SiC composites for nuclear applications are absent, although empirical relationships exist in the literature. Here, a hierarchical multiscale modeling approach was presented to address this challenge. This modular approach addressed this difficulty by dividing the various aspects of the composite material into separate models at different length scales, with the evaluated property from the lower-length-scale model serving as an input to the higher-length-scale model. The multiscale model considered the properties of various individual constituents of the composite material (fiber, matrix, and interphase), the porosity in the matrix, the fiber volume fraction, the composite architecture, the tow thickness, etc. By considering inhomogeneous and anisotropic contributions intrinsically, our bottom-up multiscale modeling strategy is naturally physics-informed, bridging constitutive law from micromechanics to meso-mechanics and structural mechanics. The effects that these various physical attributes and thermo-physical properties have on the composite’s bulk thermal properties were easily evaluated and demonstrated through the various analyses presented herein. Since silicon carbide fiber-reinforced SiC CMCs are also promising thermal–structural materials with a broad range of high-end technology applications beyond nuclear applications, we envision that the multiscale modeling method we present here may prove helpful in future efforts to develop and construct reinforced CMCs and other advanced composite nuclear materials, such as MAX phase materials, that can service under harsh environments of ultrahigh temperatures, oxidation, corrosion, and/or irradiation.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2025

Laser-induced slip casting as an additive manufacturing approach for silicon carbide

Here, this work presents processing silicon carbide (SiC) with the laser-induced slip casting (LIS) additive manufacturing (AM). SiC was stabilized in water with polyethyleneimine (PEI) dispersant, and SiC slurries were made with rheology for LIS printing. High-density ceramic parts were printed, followed by single-step binder burnout and sintering. The printed parts achieved 93–95 % of theoretical density. X-ray computed tomography (XCT) revealed a small distribution of flaws exceeding 100 microns. The mechanical properties were measured in both parallel and perpendicular to the printing layers, and the orientation with layers perpendicular to the bending moment resulted in higher strength compared to the parallel direction. Porosity resulting from processing and large inclusions of boron carbide (B4C) were the root cause of failure in the measured samples. Despite these defects through this effort, this new approach demonstrates promise for green forming of SiC with densities greater than 95 % theoretical and tensile strengths above 250 MPa.

Additive Manufacturing↗
DOE OSTI2022

Integrated silicon carbide diode rectifier circuits

An integrated silicon carbide rectifier circuit with an on chip isolation diode. The isolation diode can be a channel-to-substrate isolation diode or a channel to channel isolation diode. the circuit teaches an integrated diode rectification circuit for use with a two phase center tap transformer having a first voltage output, a second voltage output, and a center tap output with a single chip having a first half-wave rectifier connected to the first voltage output, a second half-wave rectifier connected to the second voltage output, and a floating substrate connection connected to the center tap output and an on chip first channel-to-substrate isolation diode electrically connected between the first half-wave rectifier and the floating substrate.

Barlow, Matthew↗
DOE OSTI2023

Multi-Scale Characterization of Porosity and Cracks in Silicon Carbide Cladding after Transient Reactor Test Facility Irradiation

Silicon carbide (SiC) ceramic matrix composite (CMC) cladding is currently being pursued as one of the leading candidates for accident-tolerant fuel (ATF) cladding for light water reactor applications. The morphology of fabrication defects, including the size and shape of voids, is one of the key challenges that impacts cladding performance and guarantees reactor safety. Therefore, quantification of defects’ size, location, distribution, and leak paths is critical to determining SiC CMC in-core performance. This research aims to provide quantitative insight into the defect’s distribution under multi-scale characterization at different length scales before and after different Transient Reactor Test Facility (TREAT) irradiation tests. A non-destructive multi-scale evaluation of irradiated SiC will help to assess critical microstructural defects from production and/or experimental testing to better understand and predict overall cladding performance. X-ray computed tomography (XCT), a non-destructive, data-rich characterization technique, is combined with lower length scale electronic microscopic characterization, which provides microscale morphology and structural characterization. This paper discusses a fully automatic workflow to detect and analyze SiC-SiC defects using image processing techniques on 3D X-ray images. Following the XCT data analysis, advanced characterizations from focused ion beam (FIB) and transmission electron microscopy (TEM) were conducted to verify the findings from the XCT data, especially quantitative results from local nano-scale TEM 3D tomography data, which were utilized to complement the 3D XCT results. In this work, three SiC samples (two irradiated and one unirradiated) provided by General Atomics are investigated. The irradiated samples were irradiated in a way that was expected to induce cracking, and indeed, the automated workflow developed in this work was able to successfully identify and characterize the defects formation in the irradiated samples while detecting no observed cracking in the unirradiated sample. These results demonstrate the value of automated XCT tools to better understand the damage and damage propagation in SiC-SiC structures for nuclear applications.

21 SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS↗
DOE OSTI2020

Evaluations of Silicon Carbide Temperature Monitors

The effect of irradiation on materials properties is an important field of study for materials usage in both fission and fusion systems for energy production. Neutron flux and energy spectrums are well understood; however, the irradiation temperature can be more difficult to determine. Since the early 1960s, Silicon Carbide (SiC) has been used as a passive post-irradiation temperature monitor because the irradiation defects anneal out above the irradiation temperature. Irradiation temperature is determined by measuring a property change after isochronal annealing or during a continuously monitored annealing process. There are many properties that may be measured including electrical resistivity, bulk density, dimensions, thermal diffusivity, or lattice spacing. Electrical resistivity is accepted as a robust measurement technique; however, such method is time-consuming since the steps involved must be performed in a serial manner. The use of thermal expansion from continuous dilatometry is an automated process requiring minimal setup time. As part of a Nuclear Science User Facilities (NSUF) project, low dose silicon carbide monitors were irradiated in the BR2 material test reactor at SCK, Belgium, and were then evaluated at the Idaho National Laboratory (INL) High Temperature Test Laboratory (HTTL) to determine their peak temperature achieved during irradiation. The technical significance of this work was that the monitors were irradiated to a dose that was significantly less than recommended in published literature. This paper will discuss the evaluation processes available at HTTL and the performance of the low dose silicon carbide temperature monitors.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Zirconium-diboride silicon-carbide composites: A review

Zirconium diboride (ZrB 2 ) and silicon carbide (SiC) composites have long been of interest since it was observed that ZrB 2 improved the thermal shock resistance of SiC. However, processing of these materials can be difficult due to high and different sintering temperatures and differences in the thermodynamic stability of each material. ZrB 2 –SiC composites have been processed in a variety of ways including hot-pressing, spark-plasma sintering, reactive melt infiltration, pack cementation, chemical vapor deposition, chemical vapor infiltration, stereolithography, direct ink writing, selective laser sintering, electron beam melting, and binder jet additive manufacturing. Each manufacturing method has its own pros and cons. This review serves to summarize more than 60 years of research and provide a coherent resource for the variety of methods and advancements in development of ZrB 2 –SiC composites.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Evaluation of Low Dose Silicon Carbide Temperature Monitors

Thermocouples are generally used to provide real-time temperature indications in instrumented tests performed at materials and test reactors. Melt wires or paint spots are often included in such tests as an independent technique of detecting peak temperatures incurred during irradiation. In addition, less expensive static capsule tests, which have no leads attached for real-time data transmission, often rely on melt wires and paint spots as a post-irradiation technique for peak temperature indication. Unfortunately, these techniques are limited in that they can only detect whether a single temperature is or is not exceeded. Silicon carbide (SiC) monitors are advantageous because a single monitor can be used to determine the peak temperature reached within a relatively broad range (200 – 800°C). Although the use of SiC monitors was proposed more than five decades ago, the ultimate performance limits of this technique are not fully understood. The Nuclear Science User Facilities (NSUF) is the United States Department of Energy Office of Nuclear Energy's only designated nuclear energy user facility. Its mission is to provide nuclear energy researchers access to world-class capabilities and to facilitate the advancement of nuclear science and technology. This mission is supported by providing access to state-of-the-art experimental irradiation testing, post irradiation examination facilities, and high performance computing capabilities as well as technical and scientific assistance for the design and execution of projects. As part of an NSUF project, low dose silicon carbide monitors were irradiated in the Belgian Reactor 2 and were then evaluated both at the SCK•CEN and at Idaho National Laboratory's High Temperature Test Laboratory to determine their peak temperature achieved during irradiation. The technical significance of this work was that the monitors were irradiated to a dose that was significantly less than recommended in published literature. This paper will discuss the evaluation process, the irradiation test, and the performance of the low dose silicon carbide temperature monitors.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Silicon carbide fiber manufacturing: Cost and technology

Significant advances have been made in the past decade concerning silicon carbide fiber manufacturing methods resulting in near-stoichiometric small-diameter fibers that meet the property requirements for most of the ceramic matrix composites (CMC) and nuclear applications. The manufacturing cost, however, remained prohibitively high, preventing the use of it in different applications requiring much lower cost. Silicon carbide (SiC) fiber reinforced CMC is dominated by the cost of SiC fiber which comprises more than 50 % of the finished part cost. Here, this article provides insight into the SiC fiber manufacturing costs and highlights the need for an alternative SiC fiber precursor and manufacturing method. Analysis of the existing polycarbosilane (PCS)-based SiC fiber manufacturing shows that the crosslinking (curing) and raw material preparation steps are high-cost steps that need lower cost options. Alternative SiC fiber precursor should be sought for lowering the cost of SiC fibers.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Grinding of additively manufactured silicon carbide surfaces for optical applications

Many of the properties of Silicon carbide (SiC) are advantageous for optical applications, such as telescope mirrors and industrial laser systems. However, the base shapes of complex components are costly and difficult to manufacture. Leveraging additive manufacturing, near net complex components are readily processed. In this work, we investigate the post processing of additively manufactured SiC (AM SiC) compared to chemical vapor deposited (CVD) SiC. The specific grinding energy for the AM SiC was lower than CVD, however the trends were the same. A specular finish was observed on both materials but the AM SiC finish was limited due to residual porosity.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Electric current–assisted direct joining of silicon carbide

Conventional direct joining technologies are difficult to use with silicon carbide (SiC) materials, especially for fiber composite forms of SiC, because of the harsh conditions required. Therefore, to reduce the temperature and/or process time required for the direct joining process, an electric current–assisted joining (ECAJ) method was studied. Joining of low–resistivity grade, nitrogen doped β-SiC was demonstrated at a relatively low nominal temperature of 1750 °C with a 10 min hold by enhancing the passage of current through the material. The joining mechanism is discussed in terms of localized overheating and accelerated self-diffusion at the interface. In the case of joining at 2160 °C for 1 min, rapid crystal growth of textured SiC was found at the interface. This study indicates that rapid ECAJ-based direct joining is a practical and appropriate method for joining SiC-based materials.

36 MATERIALS SCIENCE↗