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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1982

High density Schottky barrier IRCCD sensors for SWIR applications at intermediate temperature

Monolithic 32 x 64 and 64 x 1:128 palladium silicide (Pd2Si) interline transfer infrared charge coupled devices (IRCCDs) sensitive in the 1 to 3.5 micron spectral band were developed. This silicon imager exhibits a low response nonuniformity of typically 0.2 to 1.6% rms, and was operated in the temperature range between 40 to 140 K. Spectral response measurements of test Pd2Si p-type Si devices yield quantum efficiencies of 7.9% at 1.25 microns, 5.6% at 1.65 microns 2.2% at 2.22 microns. Improvement in quantum efficiency is expected by optimizing the different structural parameters of the Pd2Si detectors. The spectral response of the Pd2Si detectors fit a modified Fowler emission model. The measured photo-electric barrier height for the Pd2Si detectors is 0.34 eV and the measured quantum efficiency coefficient, C1, is 19%/eV. The dark current level of Pd2Si Schottky barrier focal plane arrays (FPAs) is sufficiently low to enable operation at intermediate temperatures at TV frame rates. Typical dark current level measured at 120 K on the FPA is 2 nA/sq cm. The operating temperature of the Pd2Si FPA is compatible with passive cooler performance. In addition, high density Pd2Si Schottky barrier FPAs are manufactured with high yield and therefore represent an economical approach to short wavelength IR imaging. A Pd2Si Schottky barrier image sensor for push-broom multispectral imaging in the 1.25, 1.65, and 2.22 micron bands is being studied. The sensor will have two line arrays (dual band capability) of 512 detectors each, with 30 micron center-to-center detector spacing. The device will be suitable for chip-to-chip abutment, thus providing the capability to produce large, multiple chip focal planes with contiguous, in-line sensors.

Elabd, H.↗
NASA NTRS2006

Pointing Reference Scheme for Free-Space Optical Communications Systems

A scheme is proposed for referencing the propagation direction of the transmit laser signal in pointing a free-space optical communications terminal. This recently developed scheme enables the use of low-cost, commercial silicon-based sensors for tracking the direction of the transmit laser, regardless of the transmit wavelength. Compared with previous methods, the scheme offers some advantages of less mechanical and optical complexity and avoids expensive and exotic sensor technologies. In free-space optical communications, the transmit beam must be accurately pointed toward the receiver in order to maintain the communication link. The current approaches to achieve this function call for part of the transmit beam to be split off and projected onto an optical sensor used to infer the pointed direction. This requires that the optical sensor be sensitive to the wavelength of the transmit laser. If a different transmit wavelength is desired, for example to obtain a source capable of higher data rates, this can become quite impractical because of the unavailability or inefficiency of sensors at these wavelengths. The innovation proposed here decouples this requirement by allowing any transmit wavelength to be used with any sensor. We have applied this idea to a particular system that transmits at the standard telecommunication wavelength of 1,550 nm and uses a silicon-based sensor, sensitive from 0.5 to 1.0 micrometers, to determine the pointing direction. The scheme shown in the figure involves integrating a low-power 980-nm reference or boresight laser beam coupled to the 1,550-nm transmit beam via a wavelength-division-multiplexed fiber coupler. Both of these signals propagate through the optical fiber where they achieve an extremely high level of co-alignment before they are launched into the telescope. The telescope uses a dichroic beam splitter to reflect the 980- nm beam onto the silicon image sensor (a quad detector, charge-coupled device, or active-pixel-sensor array) while the 1,550- nm signal beam is transmitted through the optical assembly toward the remotely located receiver. Since the 980-nm reference signal originates from the same single-mode fiber-coupled source as the transmit signal, its position on the sensor is used to accurately determine the propagation direction of the transmit signal. The optics are considerably simpler in the proposed scheme due to the use of a single aperture for transmitting and receiving. Moreover, the issue of mechanical misalignment does not arise because the reference signal and transmitted laser beams are inherently co-aligned. The beam quality of the 980-nm reference signal used for tracking is required to be circularly symmetric and stable at the tracking-plane sensor array in order to minimize error in the centroiding algorithm of the pointing system. However, since the transmit signal is delivered through a fiber that supports a single mode at 1,550 nm, propagation of higher order 980-nm modes is possible. Preliminary analysis shows that the overall mode profile is dominated by the fundamental mode, giving a near symmetric profile. The instability of the mode was also measured and found to be negligible in comparison to the other error contributions in the centroid position on the sensor array.

Wright, Malcolm↗
NASA NTRS2013

High Throughput, High Yield Fabrication of High Quantum Efficiency Back-Illuminated Photon Counting, Far UV, UV, and Visible Detector Arrays

In this paper we discuss the high throughput end-to-end post fabrication processing of high performance delta-doped and superlattice-doped silicon imagers for UV, visible, and NIR applications. As an example, we present our results on far ultraviolet and ultraviolet quantum efficiency (QE) in a photon counting, detector array. We have improved the QE by nearly an order of magnitude over microchannel plates (MCPs) that are the state-of-the-art UV detectors for many NASA space missions as well as defense applications. These achievements are made possible by precision interface band engineering of Molecular Beam Epitaxy (MBE) and Atomic Layer Deposition (ALD).

spectroscopy↗
NASA NTRS2021

Advances in Detector-Integrated Filter Coatings for the Far Ultraviolet

We report on the continued development of multilayer optical coatings on back-illuminated silicon imaging sensors in order to enhance the functionality of such systems at ultraviolet wavelengths. This includes the development metal-dielectric filter structures to enable solar-blind operation, and graded thickness coatings to tune the spatial response of a detector system to the dispersion of a spectrometer. Such systems can maintain the high internal quantum efficiency afforded by the delta-doping process utilized at NASA JPL, while also providing long-wavelength rejection or a spatially optimized efficiency (or both). We present the characterization of CCD and CMOS image sensors incorporating these processes, and describe the atomic layer deposition coating processes. Such detectors are currently being developed for ground-based high energy physics applications as well as NASA orbital astrophysics instruments operating at wavelengths shorter than 200 nm.

Nikzad, Shouleh↗
DOE OSTI2026

Spectrometer-free quantitative vapor sensing and classification via spatiotemporal imaging of porous silicon metasurfaces

Metasurfaces offer a compact platform for optical vapor sensing, but their practical deployment has been limited by weak evanescent light–matter interactions and reliance on spectrally resolved instrumentation. Here, we report porous silicon (pSi) metasurfaces for spectrometer-free quantitative detection of volatile organic compounds (VOCs) with strongly enhanced light–matter interaction. The engineered porosity increases sensitivity by >100× relative to non-porous dielectric metasurfaces, enabling limits of detection of 1.65 ppm for methanol and 9.1 ppm for ethanol across a broad dynamic range (<10 ppm to >103 ppm). Imaging-based readout provides a lightweight, spectrometer-free pathway for real-time quantitative sensing. Beyond quantitative detection, the mesoporous architecture introduces adsorption–desorption kinetics as an additional information channel. Analysis of the resulting spatiotemporal signatures enables kinetic fingerprinting without reliance on infrared spectral features or surface functionalization, and a lightweight machine-learning classifier differentiates acetone, methanol, ethanol, and isopropanol with 91.6% accuracy. These results establish porous metasurfaces as spatiotemporal sensing elements that couple quantitative vapor detection with kinetic fingerprinting through real-time dynamical responses, enabling low-cost, high-performance optical sensors.

Dash, Tomoshree [Clemson University]↗
DOE OSTI2024

Atom-resolved imaging with a silicon tip integrated into an on-chip scanning tunneling microscope

Limited throughput is a shortcoming of the Scanning Tunneling Microscope (STM), particularly when used for atomically precise lithography. To address this issue, we have developed an on-chip STM based on Microelectromechanical-Systems (MEMS) technology. The device reported here has one degree of freedom, replacing the Z axis in a conventional STM. The small footprint of the on-chip STM provides a great opportunity to increase STM throughput by incorporating a number of on-chip STMs in an array to realize parallel STM. The tip methodology adopted for the on-chip STM presented here, which is a batch-fabricated Si tip, makes our design conducive to this goal. In this work, we investigate the capability of this on-chip STM with an integrated Si tip for STM imaging. We integrate the on-chip STM into a commercial ultrahigh-vacuum STM system and perform imaging with atomic resolution on par with conventional STMs but at higher scan speeds due to the higher sensitivity of the MEMS actuator relative to a piezotube. The results attest that it is possible to achieve a parallel and high-throughput STM platform, which is a fully batch-fabricated MEMS STM nanopositioner capable of performing atomic-resolution STM imaging.

Instruments & Instrumentation↗
DOE OSTI2021

A Comprehensive Survey of Readout Strategies for SiPMs Used in Nuclear Imaging Systems

Silicon photomultipliers (SiPMs) offer advantages such as lower relative cost, smaller size, and lower operating voltages compared to photomultiplier tubes. A SiPM’s readout circuit topology can significantly affect the characteristics of an imaging array. In nuclear imaging and detection, energy, timing, and position are the primary characteristics of interest. Nuclear imaging has applications in the medical, astronomy, and high energy physics fields, making SiPMs an active research area. This work is focused on the circuit topologies required for nuclear imaging. We surveyed the readout strategies including the front end preamplification topology choices of transimpedance amplifier, charge amplifier, and voltage amplifier. In addition, a review of circuit topologies suitable for energy, timing, and position information extraction was performed along with a summary of performance limitations and current challenges.

42 ENGINEERING↗
DOE OSTI2020

High-field spatial imaging of charge transport in silicon at low temperature

We present direct imaging measurements of charge transport across a 1 cm × 1 cm × 4 mm-thick crystal of high purity silicon (~15 kΩ-cm) at temperatures of 5 K and 500 mK. We use these data to measure lateral diffusion of electrons and holes as a function of the electric field applied along the [111] crystal axis and to verify our low-temperature Monte Carlo software. The range of field strengths in this paper exceed those used in our previous study [R. A. Moffatt et al., Appl. Phys. Lett. 114, 032104 (2019)] by a factor of 10 and now encompass the region in which some recent silicon dark matter detectors operate [R. Agnese et al., Phys. Rev. Lett. 121, 051301 (2018)]. Finally, we also report on a phenomenon of surface charge trapping, which can reduce expected charge collection.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
NASA NTRS2009

Improved Starting Materials for Back-Illuminated Imagers

An improved type of starting materials for the fabrication of silicon-based imaging integrated circuits that include back-illuminated photodetectors has been conceived, and a process for making these starting materials is undergoing development. These materials are intended to enable reductions in dark currents and increases in quantum efficiencies, relative to those of comparable imagers made from prior silicon-on-insulator (SOI) starting materials. Some background information is prerequisite to a meaningful description of the improved starting materials and process. A prior SOI starting material, depicted in the upper part the figure, includes: a) A device layer on the front side, typically between 2 and 20 m thick, made of p-doped silicon (that is, silicon lightly doped with an electron acceptor, which is typically boron); b) A buried oxide (BOX) layer (that is, a buried layer of oxidized silicon) between 0.2 and 0.5 m thick; and c) A silicon handle layer (also known as a handle wafer) on the back side, between about 600 and 650 m thick. After fabrication of the imager circuitry in and on the device layer, the handle wafer is etched away, the BOX layer acting as an etch stop. In subsequent operation of the imager, light enters from the back, through the BOX layer. The advantages of back illumination over front illumination have been discussed in prior NASA Tech Briefs articles.

Pain, Bedabrata↗
NASA NTRS1985

Photocurrent images of amorphous-silicon solar-cell modules

Results obtained in applying the unique characteristics of the solar cell laser scanner to investigate the defects and quality of amorphous silicon cells are presented. It is concluded that solar cell laser scanners can be effectively used to nondestructively test not only active defects but also the cell quality and integrity of electrical contacts.

Kim, Q.↗
NASA NTRS1991

An integrated eddy current detection and imaging system on a silicon chip

Eddy current probes have been used for many years for numerous sensing applications including crack detection in metals. However, these applications have traditionally used the eddy current effect in the form of a physically wound single or different probe pairs which of necessity must be made quite large compared to microelectronics dimensions. Also, the traditional wound probe can only take a point reading, although that point might include tens of individual cracks or crack arrays; thus, conventional eddy current probes are beset by two major problems: (1) no detailed information can be obtained about the crack or crack array; and (2) for applications such as quality assurance, a vast amount of time must be taken to scan a complete surface. Laboratory efforts have been made to fabricate linear arrays of single turn probes in a thick film format on a ceramic substrate as well as in a flexible cable format; however, such efforts inherently suffer from relatively large size requirements as well as sensitivity issues. Preliminary efforts to fully extend eddy current probing from a point or single dimensional level to a two dimensional micro-eddy current format on a silicon chip, which might overcome all of the above problems, are presented.

Henderson, H. Thurman↗
NASA NTRS1994

The Imaging Properties of a Silicon Wafer X-Ray Telescope

Silicon wafers have excellent optical properties --- low microroughness and good medium-scale flatness --- which Make them suitable candidates for inexpensive flat-plate grazing-incidence x-ray mirrors. On short spatial scales (less than 3 mm) the surface quality of silicon wafers rivals that expected of the Advanced X-Ray Astrophysics Facility (AXAF) high-resolution optics. On larger spatial scales, however, performance may be degraded by the departure from flatness of the wafer and by distortions induced by the mounting scheme. In order to investigate such effects, we designed and constructed a prototype silicon-wafer x-ray telescope. The device was then tested in both visible light and x rays. The telescope module consists of 94 150-mm-diameter wafers, densely packed into the first stage of a Kirkpatrick-Baez configuration. X-ray tests at three energies (4.5, 6.4, and 8.0 keV) showed an energy-independent line spread function with full width at half maximum (FWHM) of 150 arcseconds, dominated by deviations from large-scale flatness.

Joy, M. K.↗
NASA NTRS1976

Multispectral mapping of the lunar surface using groundbased telescopes

Images of the lunar surface were obtained at several wavelengths using a silicon vidicon imaging system and groundbased telescopes. These images were recorded and processed in digital form so that quantitative information is preserved. The photometric precision of the images is shown to be better than 1 percent. Ratio images calculated by dividing images obtained at two wavelengths (0.40/0.56 micrometer) and 0.95/0.56 micrometer are presented for about 50 percent of the lunar frontside. Spatial resolution is about 2 km at the sub-earth point. A complex of distinct units is evident in the images. Earlier work with the reflectance spectrum of lunar materials indicates that for the most part these units are compositionally distinct. Digital images of this precision are extremely useful to lunar geologists in disentangling the history of the lunar surface.

Mccord, T. B.↗
NASA NTRS1976

Multispectral mapping of the lunar surface using ground-based telescopes

Images of the lunar surface were obtained at several wavelengths using a silicon vidicon imaging system and ground-based telescopes. These images were recorded and processed in digital form so that quantitative information was preserved. The photometric precision of the images is shown to be better than 1%. Ratio images calculated by dividing images obtained at two wavelengths (0.40/0.56 and 0.95/0.56 microns) are presented for about 50% of the lunar frontside. Spatial resolution is about 2 km at the subearth point. A complex of distinct units is evident in the images. Earlier work with the reflectance spectrum of lunar materials indicates that, for the most part, these units are compositionally distinct.

Mccord, T. B.↗
DOE OSTI2025

Imaging the Acceptor Wave Function Anisotropy in Silicon

We present the first scanning tunneling microscopy (STM) image of hydrogenic acceptor wave functions in silicon. These acceptor states appear as square-ring-like features in STM images and originate from near-surface defects introduced by high-energy bismuth implantation into a silicon (001) wafer. Scanning tunneling spectroscopy confirms the formation of a p-type surface. Effective-mass and tight-binding calculations provide an excellent description of the observed square-ring-like features, confirming their acceptor character and attributing their symmetry to the light- and heavy-hole band degeneracy in silicon. A detailed understanding of the energetic and spatial properties of acceptor wave functions in silicon is essential for engineering large-scale acceptor-based quantum devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗