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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS2009

Improved Starting Materials for Back-Illuminated Imagers

An improved type of starting materials for the fabrication of silicon-based imaging integrated circuits that include back-illuminated photodetectors has been conceived, and a process for making these starting materials is undergoing development. These materials are intended to enable reductions in dark currents and increases in quantum efficiencies, relative to those of comparable imagers made from prior silicon-on-insulator (SOI) starting materials. Some background information is prerequisite to a meaningful description of the improved starting materials and process. A prior SOI starting material, depicted in the upper part the figure, includes: a) A device layer on the front side, typically between 2 and 20 m thick, made of p-doped silicon (that is, silicon lightly doped with an electron acceptor, which is typically boron); b) A buried oxide (BOX) layer (that is, a buried layer of oxidized silicon) between 0.2 and 0.5 m thick; and c) A silicon handle layer (also known as a handle wafer) on the back side, between about 600 and 650 m thick. After fabrication of the imager circuitry in and on the device layer, the handle wafer is etched away, the BOX layer acting as an etch stop. In subsequent operation of the imager, light enters from the back, through the BOX layer. The advantages of back illumination over front illumination have been discussed in prior NASA Tech Briefs articles.

Pain, Bedabrata↗
NASA NTRS1985

Photocurrent images of amorphous-silicon solar-cell modules

Results obtained in applying the unique characteristics of the solar cell laser scanner to investigate the defects and quality of amorphous silicon cells are presented. It is concluded that solar cell laser scanners can be effectively used to nondestructively test not only active defects but also the cell quality and integrity of electrical contacts.

Kim, Q.↗
NASA NTRS1991

An integrated eddy current detection and imaging system on a silicon chip

Eddy current probes have been used for many years for numerous sensing applications including crack detection in metals. However, these applications have traditionally used the eddy current effect in the form of a physically wound single or different probe pairs which of necessity must be made quite large compared to microelectronics dimensions. Also, the traditional wound probe can only take a point reading, although that point might include tens of individual cracks or crack arrays; thus, conventional eddy current probes are beset by two major problems: (1) no detailed information can be obtained about the crack or crack array; and (2) for applications such as quality assurance, a vast amount of time must be taken to scan a complete surface. Laboratory efforts have been made to fabricate linear arrays of single turn probes in a thick film format on a ceramic substrate as well as in a flexible cable format; however, such efforts inherently suffer from relatively large size requirements as well as sensitivity issues. Preliminary efforts to fully extend eddy current probing from a point or single dimensional level to a two dimensional micro-eddy current format on a silicon chip, which might overcome all of the above problems, are presented.

Henderson, H. Thurman↗
NASA NTRS1994

The Imaging Properties of a Silicon Wafer X-Ray Telescope

Silicon wafers have excellent optical properties --- low microroughness and good medium-scale flatness --- which Make them suitable candidates for inexpensive flat-plate grazing-incidence x-ray mirrors. On short spatial scales (less than 3 mm) the surface quality of silicon wafers rivals that expected of the Advanced X-Ray Astrophysics Facility (AXAF) high-resolution optics. On larger spatial scales, however, performance may be degraded by the departure from flatness of the wafer and by distortions induced by the mounting scheme. In order to investigate such effects, we designed and constructed a prototype silicon-wafer x-ray telescope. The device was then tested in both visible light and x rays. The telescope module consists of 94 150-mm-diameter wafers, densely packed into the first stage of a Kirkpatrick-Baez configuration. X-ray tests at three energies (4.5, 6.4, and 8.0 keV) showed an energy-independent line spread function with full width at half maximum (FWHM) of 150 arcseconds, dominated by deviations from large-scale flatness.

Joy, M. K.↗
NASA NTRS1976

Multispectral mapping of the lunar surface using groundbased telescopes

Images of the lunar surface were obtained at several wavelengths using a silicon vidicon imaging system and groundbased telescopes. These images were recorded and processed in digital form so that quantitative information is preserved. The photometric precision of the images is shown to be better than 1 percent. Ratio images calculated by dividing images obtained at two wavelengths (0.40/0.56 micrometer) and 0.95/0.56 micrometer are presented for about 50 percent of the lunar frontside. Spatial resolution is about 2 km at the sub-earth point. A complex of distinct units is evident in the images. Earlier work with the reflectance spectrum of lunar materials indicates that for the most part these units are compositionally distinct. Digital images of this precision are extremely useful to lunar geologists in disentangling the history of the lunar surface.

Mccord, T. B.↗
NASA NTRS1976

Multispectral mapping of the lunar surface using ground-based telescopes

Images of the lunar surface were obtained at several wavelengths using a silicon vidicon imaging system and ground-based telescopes. These images were recorded and processed in digital form so that quantitative information was preserved. The photometric precision of the images is shown to be better than 1%. Ratio images calculated by dividing images obtained at two wavelengths (0.40/0.56 and 0.95/0.56 microns) are presented for about 50% of the lunar frontside. Spatial resolution is about 2 km at the subearth point. A complex of distinct units is evident in the images. Earlier work with the reflectance spectrum of lunar materials indicates that, for the most part, these units are compositionally distinct.

Mccord, T. B.↗
NASA NTRS1979

Lunar multispectral maps - Part II of the lunar nearside

Images of the lunar surface are being obtained at several wavelengths using a silicon vidicon imaging system and ground-based telescopes. These images are recorded and processed in digital form so that quantitative information is preserved; their photometric precision has been shown to be 1% or better. Ratio images, calculated by dividing those obtained at two wavelengths (0.40/0.56 and 0.95/0.56 micron), were presented in an earlier article, and more are presented here for a total coverage of about 60% of the lunar frontside. Spatial resolution is about 2 km at the subearth point. A complex of distinct units is evident in the images. Earlier work with the reflectance spectrum of lunar materials indicates that for the most part these units are compositionally distinct. These digital images are being used by lunar geologists to interpret the history of the lunar surface.

Mccord, T. B.↗
NASA NTRS1974

Memory systems for signal generating photoelectric image detectors

Digital systems are discussed which have the capacity to handle the large amounts of information contained in a typical image. It was used with a high gain pulse counting television camera tube, with a silicon target image detector and an analog to digital converter between the detector and the memory.

Dennison, E. W.↗
NASA NTRS1999

Design of a 2.5 Gbps Optical Transmitter for the International Space Station

A high data rate laser transmitter assembly (LTA) has been designed as the source for an optical free-space communication link between the International Space Station and the 1-meter Optical Communication Telescope Laboratory (OCTL) to be built at the Table Mountain Facility (IMF, Wrightwood, CA). The transmitter design concept uses a fiber-based master oscillator power amplifier (MOPA) configuration with an average output power of 200 made at a 1550 nm transmit wavelength. This transmitter source is also designed to provide a signal at 980 nm to the Silicon-based focal plane array for the point-ahead beam control function. This novel integration of a 980 nm boresight signal allows the use of Silicon based imagers for the acquisition/tracking and point-ahead functions, yet permits the transmit signal to be at any wavelength outside the Silicon sensitivity. The LTA, a sub-system of the Flight Terminal, has been designed to have a selectable data rate from 155 - 2500 Mbps in discrete steps. It also incorporates a 2.5 Gbps pseudo-random bit sequence (PRBS) generator for complete link testing and diagnostics. The design emphasizes using commercial off the shelf components (COTS).

Ortiz, Gerardo G.↗
NASA NTRS1988

Acoustic imaging of subtle porosity variations in ceramics

Acoustic images of silicon carbide ceramic disks were obtained using a precision scanning contact pulse-echo technique. Phase and cross-correlation velocity and attenuation maps were used to form color images of microstructural variations. These acoustic images reveal microstructural variations not observable with X-radiography.

Generazio, E. R.↗
NASA NTRS1988

Intersubband absorption of silicon-based quantum wells for infrared imaging

The 10-micron intersubband absorption in quantum wells made of the silicon-based system, Si/Si(1-x)Ge(x), has been calculated. The necessary details of the effective-mass anisotropy are included in the present analysis. It is found that it is readily possible to achieve an absorption constant of order of 10,000/cm in Si quantum wells with current doping technology. For 110-line and 111-line growth directions, a further advantage of Si quantum wells is pointed out, namely, an allowed absorption at normal incidence due to the anisotropic effective mass in Si.

Yang, Chan-Ion↗
NASA NTRS1985

Shortwave infrared 512 x 2 line sensor for earth resources applications

As part of the NASA remote-sensing Multispectral Linear Array Program, an edge-buttable 512 x 2 IRCCD line image sensor with 30-micron Pd2Si Schottky-barrier detectors is developed for operation with passive cooling at 120 K in the 1.1-2.5 micron short infrared band. On-chip CCD multiplexers provide one video output for each 512 detector band. The monolithic silicon line imager performance at a 4-ms optical integration time includes a signal-to-noise ratio of 241 for irradiance of 7.2 microwatts/sq cm at 1.65 microns wavelength, a 5000 dynamic range, a modulation transfer function, greater than 60 percent at the Nyquist frequency, and an 18-milliwatt imager chip total power dissipation. Blemish-free images with three percent nonuniformity under illumination and nonlinearity of 1.25 percent are obtained. A five SWIR imager hybrid focal plane was constructed, demonstrating the feasibility of arrays with only a two-detector loss at each joint.

Tower, J. R.↗
NASA NTRS2003

Improved Process for Fabricating Carbon Nanotube Probes

An improved process has been developed for the efficient fabrication of carbon nanotube probes for use in atomic-force microscopes (AFMs) and nanomanipulators. Relative to prior nanotube tip production processes, this process offers advantages in alignment of the nanotube on the cantilever and stability of the nanotube's attachment. A procedure has also been developed at Ames that effectively sharpens the multiwalled nanotube, which improves the resolution of the multiwalled nanotube probes and, combined with the greater stability of multiwalled nanotube probes, increases the effective resolution of these probes, making them comparable in resolution to single-walled carbon nanotube probes. The robust attachment derived from this improved fabrication method and the natural strength and resiliency of the nanotube itself produces an AFM probe with an extremely long imaging lifetime. In a longevity test, a nanotube tip imaged a silicon nitride surface for 15 hours without measurable loss of resolution. In contrast, the resolution of conventional silicon probes noticeably begins to degrade within minutes. These carbon nanotube probes have many possible applications in the semiconductor industry, particularly as devices are approaching the nanometer scale and new atomic layer deposition techniques necessitate a higher resolution characterization technique. Previously at Ames, the use of nanotube probes has been demonstrated for imaging photoresist patterns with high aspect ratio. In addition, these tips have been used to analyze Mars simulant dust grains, extremophile protein crystals, and DNA structure.

Stevens, R.↗
NASA NTRS1977

Vesta - The first pyroxene band from new spectroscopic measurements

Spectral reflectance measurements of asteroid 4 Vesta were obtained using a silicon vidicon spectrometer with a resolution of 2 to 4 thousandths of a micron. A flow chart illustrating the data reduction procedure is given, and the location, absorptivity, and bandwidth of an absorption band detected in the near infrared region are described. The absorption band has been interpreted as due to electronic absorptions in ferrous iron in sixfold coordination in the pyroxene, pigeonite. The heightened spectral resolution obtained from the silicon vidicon imaging system permits determination of the relative calcium content of the pyroxene (10 to 12%). Furthermore, the symmetry of the absorption band implies an absence of olivine, which is commonly associated with pyroxene in terrestrial and meteoritic mineral samples. Support for these conclusions is found in spectral analyses of pyroxene, as well as in spectral reflectance measurements of 4 Vesta obtained by other observers.

Mcfadden, L. A.↗
NASA NTRS1977

Lunar spectral units - A northern hemispheric mosaic

The distribution of lunar spectral units has been studied with the aid of multispectral imaging using silicon vidicons. The employed method has been developed over the last few years. The lunar observations used in the study had been made on May 7, 1974 (UT) at the Table Mountain Observatory. Four narrow bandpass interference filters centered at 0.38, 0.56, 0.85, and 1.05 micrometers were used. In the data displays presented the large differences (as in visual albedo) between the mare and the uplands have been deliberately minimized to allow small variations between these two major regions to be studied. Most of the spectral units are quite distinct, with relatively sharp boundaries. Attention is given to the general characteristics of spectral units, the distribution of mare basalt types, and the distribution of orange glass and dark mantling material.

Johnson, T. V.↗
NASA NTRS1982

Charge-coupled device (CCD) television camera for NASA's Galileo mission to Jupiter

The CCD detector under construction for use in the slow-scan television camera for the NASA Galileo Jupiter orbiter to be launched in 1985 is presented. The science objectives and the design constraints imposed by the earth telemetry link, platform residual motion, and the Jovian radiation environment are discussed. Camera optics are inherited from Voyager; filter wavelengths are chosen to enable discrimination of Galilean-satellite surface chemical composition. The CCO design, an 800 by 800-element 'virtual-phase' solid-state silicon image-sensor array with supporting electronics, is described with detailed discussion of the thermally generated dark current, quantum efficiency, signal-to-noise ratio, and resolution. Tests of the effect of ionizing radiation were performed and are analyzed statistically. An imaging mode using a 2-1/3-sec frame time and on-chip summation of the signal in 2 x 2 blocks of adjacent pixels is designed to limit the effects of the most extreme Jovian radiation. Smearing due to spacecraft/target relative velocity and platform instability will be corrected for via an algorithm maximizing spacial resolution at a given signal-to-noise level. The camera is expected to produce 40,000 images of Jupiter and its satellites during the 20-month mission.

Klaasen, K. P.↗
NASA NTRS2013

Analysis on H Spectral Shape During the Early 2012 SEPs with the PAMELA Experiment

The satellite-borne PAMELA experiment has been continuously collecting data since 2006.This apparatus is designed to study charged particles in the cosmic radiation. The combination of a permanent magnet, a silicon strip tracker and a silicon-tungsten imaging calorimeter, and the redundancy of instrumentation allow very precise studies on the physics of cosmic rays in a wide energy range and with high statistics. This makes PAMELA a very suitable instrument for Solar Energetic Particle (SEP) observations. Not only does its pan the energy range between the ground-based neutron monitor data and the observations of SEPs from space,but PAMELA also carries out the first direct measurements of the composition for the highest energy SEP events, including those causing Ground Level Enhancements (GLEs).In particular, PAMELA has registered many SEP events during solar cycle 24,offering unique opportunities to address the question of high-energy SEP origin. A preliminary analysis on proton spectra behaviour during this event is presented in this work.

Protons↗
NASA NTRS1994

Silicon sample holder for molecular beam epitaxy on pre-fabricated integrated circuits

The sample holder of the invention is formed of the same semiconductor crystal as the integrated circuit on which the molecular beam expitaxial process is to be performed. In the preferred embodiment, the sample holder comprises three stacked micro-machined silicon wafers: a silicon base wafer having a square micro-machined center opening corresponding in size and shape to the active area of a CCD imager chip, a silicon center wafer micro-machined as an annulus having radially inwardly pointing fingers whose ends abut the edges of and center the CCD imager chip within the annulus, and a silicon top wafer micro-machined as an annulus having cantilevered membranes which extend over the top of the CCD imager chip. The micro-machined silicon wafers are stacked in the order given above with the CCD imager chip centered in the center wafer and sandwiched between the base and top wafers. The thickness of the center wafer is about 20% less than the thickness of the CCD imager chip. Preferably, four titanium wires, each grasping the edges of the top and base wafers, compress all three wafers together, flexing the cantilever fingers of the top wafer to accommodate the thickness of the CCD imager chip, acting as a spring holding the CCD imager chip in place.

Hoenk, Michael E.↗