Search NASA⌕ Search

SEARCH · Search NASA

Results for “Silicon photonics”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS2007

InGaAsP Avalanche Photodetectors for Non-Gated 1.06 micrometer Photon-Counting Receivers

The efficient detection of single photons at 1.06 micron is of considerable interest for lidar/ladar systems designed for remote sensing an d ranging as well as for free-space optical transmission in photon-st arved applications. However, silicon-based single photon avalanche diodes (SPADs) used at shorter wavelengths have very low single photon d etection efficiency (approximately 1 - 2%) at 1.06 micron, and InP/In GaAs SPADs designed for telecommunications wavelengths near 1.5 micro n exhibit high dark count rates that generally inhibit non-gated (free-running) operation. To bridge this "single photon detection gap" for wavelengths just beyond 1 micron, we have developed high performance , large area (80 - 200 micron diameter) InP-based InGaAsP quaternary absorber SPADs optimized for operation at 1.06 micron and based on a highly reliable planar geometry avalanche photodiode structure. We wil l show that dark count rates are sufficiently low to allow for non-ga ted operation while achieving detection efficiencies far surpassing t hose found for Si SPADs. At a detection efficiency of 10%, 80 micron diameter devices exhibit dark count rates below 1000 Hz and count rate s of at least 3 MHz when operated at -40 C. Significantly higher dete ction efficiencies (30 - 50%) are achievable with acceptable tradeoff s in dark count rate. In this paper, we will also discuss performance modeling for these devices and compare their behavior with longer wav elength InP-based InGaAs ternary absorber SPADs fabricated on a relat ed device design platform.

Itzler, Mark A.↗
NASA NTRS1984

Photodeposition of Nitride Insulators on 3-5 Substrates

Laser assisted chemical vapor deposition (LCVD) of nitride insulators, using an excimer laser operating on either KrF or ArF transitions (248 nm or 193 nm respectively) was explored. The properties of silicon nitride films Deposited with 193 nm photons on quartz and silicon substrates in a SiH4, NH3, N2 and He mixture are discussed. Aluminum films were deposited at substrate temperatures from room temperature to 200 C using 248 nm or 193 nm photons to dissociate trimethylaluminum (TMA). Deposition of Al films were investigated to isolate problems associated with TMA such as C and O contamination during AlN depositions. The Al film properties were evaluated on SiO2 and Si substrates. Preliminary results were obtained for aluminum nitride films using TMA and NH3 as the gas phase Al and N donors. The properties of Cr films deposited over areas 5 square cm using 193 nm or 248 nm photons to dissociate Cr(CO) were investigated.

Collins, G. J.↗
NASA NTRS2015

Radiation-Resistant Photon-Counting Detector Package Providing Sub-ps Stability for Laser Time Transfer in Space

We are reporting on a design, construction and performance of photon-counting detector packages based on silicon avalanche photodiodes. These photon-counting devices have been optimized for extremely high stability of their detection delay. The detectors have been designed for future applications in fundamental metrology and optical time transfer in space. The detectors have been qualified for operation in space missions. The exceptional radiation tolerance of the detection chip itself and of all critical components of a detector package has been verified in a series of experiments.

radiation hardness↗
NASA NTRS1995

Proceedings of the International Conference on Integrated Micro/Nanotechnology for Space Applications

The recent evolution of microelectronic technologies coupled with the growth of micro-electro-mechanical systems (MEMS) has had significant impact in the commercial sector. The focus of this conference was to anticipate and extend the incorporation of nano-electronics and MEMS into application specific integrated microinstruments (ASIM's) in space systems. Presentations ranged from mission application of nano-satellites to silicon micromachining for photonic applications.

Source record↗
NASA NTRS1998

Design and Performance of a Miniature Lidar Wind Profiler (MLWP)

The directional velocity of the wind is one of the most critical components for understanding meteorological and other dynamic atmospheric processes. Altitude-resolved wind velocity measurements, also known as wind profiles or soundings, are especially necessary for providing data for meteorological forecasting and overall global circulation models (GCM's). Wind profiler data are also critical in identifying possible dangerous weather conditions for aviation. Furthermore, a system has yet to be developed for wind profiling from the surface of Mars which could also meet the stringent requirements on size, weight, and power of such a mission. Obviously, a novel wind profiling approach based on small and efficient technology is required to meet these needs. A lidar system based on small and highly efficient semiconductor lasers is now feasible due to recent developments in the laser and detector technologies. The recent development of high detection efficiency (50%), silicon-based photon-counting detectors when combined with high laser pulse repetition rates and long receiver integration times has allowed these transmitter energies to be reduced to the order of microjoules per pulse. Aerosol lidar systems using this technique have been demonstrated for both Q-switched, diode-pumped solid-state laser transmitters (lambda = 523 nm) and semiconductor diode lasers (lambda = 830 nm); however, a wind profiling lidar based on this technique has yet to be developed. We will present an investigation of a semiconductor-laser-based lidar system which uses the "edge-filter" direct detection technique to infer Doppler frequency shifts of signals backscattered from aerosols in the planetary boundary layer (PBL). Our investigation will incorporate a novel semiconductor laser design which mitigates the deleterious effects of frequency chirp in pulsed diode lasers, a problem which has limited their use in such systems in the past. Our miniature lidar could be used on a future Mars lander and perhaps find its own niche in terrestrial applications due to its potential low cost an small size.

Cornwell, Donald M., Jr.↗
NASA NTRS1986

Tailorable Infrared Sensing Devices

Alternating layers of GexSi1.x and Si deposited by molecular beam epitaxy. When electric field applied across stack, acts as detector for infrared photons. Device fabricated on silicon substrate together with sophisticated very-large-scale integrated circuitry. Useful for wide range of applications related to robotics, space exploration, and terrestrial surveillance.

Cheng, L. J.↗
NASA NTRS2013

Optimization of the Orbiting Wide-Angle Light Collectors (OWL) Mission for Charged-Particle and Neutrino Astronomy

OWL [1] uses the Earth's atmosphere as a vast calorimeter to fully enable the emerging field of charged-particle astronomy with high-statistics measurements of ultra-high-energy cosmic rays (UHECR) and a search for sources of UHE neutrinos and photons. Confirmation of the Greisen-Zatsepin-Kuzmin (GZK) suppression above approx. 4 x 10(exp 19) eV suggests that most UHECR originate in astrophysical objects. Higher energy particles must come from sources within about 100 Mpc and are deflected by approx. 1 degree by predicted intergalactic/galactic magnetic fields. The Pierre Auger Array, Telescope Array and the future JEM-EUSO ISS mission will open charged-particle astronomy, but much greater exposure will be required to fully identify and measure the spectra of individual sources. OWL uses two large telescopes with 3 m optical apertures and 45 degree FOV in near-equatorial orbits. Simulations of a five-year OWL mission indicate approx. 10(exp 6) sq km/ sr/ yr of exposure with full aperture at approx. 6 x 10(exp 19) eV. Observations at different altitudes and spacecraft separations optimize sensitivity to UHECRs and neutrinos. OWL's stereo event reconstruction is nearly independent of track inclination and very tolerant of atmospheric conditions. An optional monocular mode gives increased reliability and can increase the instantaneous aperture. OWL can fully reconstruct horizontal and upward-moving showers and so has high sensitivity to UHE neutrinos. New capabilities in inflatable structures optics and silicon photomultipliers can greatly increase photon sensitivity, reducing the energy threshold for n detection or increasing viewed area using a higher orbit. Design trades between the original and optimized OWL missions and the enhanced science capabilities are described.

Optimization↗
NASA NTRS1990

Photon detection with parallel asynchronous processing

An approach to photon detection with a parallel asynchronous signal processor is described. The visible or IR photon-detection capability of the silicon p(+)-n-n(+) detectors and the parallel asynchronous processing are addressed separately. This approach would permit an independent analog processing channel to be dedicated to every pixel. A laminar architecture consisting of a stack of planar arrays of the devices would form a 2D array processor with a 2D array of inputs located directly behind a focal-plane detector array. A 2D image data stream would propagate in neuronlike asynchronous pulse-coded form through the laminar processor. Such systems can integrate image acquisition and image processing. Acquisition and processing would be performed concurrently as in natural vision systems. The possibility of multispectral image processing is addressed.

Coon, D. D.↗
NASA NTRS1997

Few arc-minute and keV resolutions with the TIGRE Compton telescope

The tracking and imaging gamma ray experiment (TIGRE) Compton telescope concept can provide an angular resolution of a few arcmin, an energy resolution of a few keV and high sensitivity, while providing the wide field of view necessary for surveying and monitoring observations. Silicon and CdZnTe strip detectors are used to detect Compton pair events and determine their incident directions and energies. Above 400 keV, Compton recoil electrons are tracked through successive layers of thin silicon strip detectors. Compton scattered photons are detected with CdZnTe strip detectors. Pair electrons and positrons are tracked to provide high sensitivity observations in the 10 to 100 MeV range. Polarization studies are performed with large angle Compton scatter events. The TIGRE concept and development status are described.

Zych, A.↗
NASA NTRS2005

N-Type delta Doping of High-Purity Silicon Imaging Arrays

A process for n-type (electron-donor) delta doping has shown promise as a means of modifying back-illuminated image detectors made from n-doped high-purity silicon to enable them to detect high-energy photons (ultraviolet and x-rays) and low-energy charged particles (electrons and ions). This process is applicable to imaging detectors of several types, including charge-coupled devices, hybrid devices, and complementary metal oxide/semiconductor detector arrays. Delta doping is so named because its density-vs.-depth characteristic is reminiscent of the Dirac delta function (impulse function): the dopant is highly concentrated in a very thin layer. Preferably, the dopant is concentrated in one or at most two atomic layers in a crystal plane and, therefore, delta doping is also known as atomic-plane doping. The use of doping to enable detection of high-energy photons and low-energy particles was reported in several prior NASA Tech Briefs articles. As described in more detail in those articles, the main benefit afforded by delta doping of a back-illuminated silicon detector is to eliminate a "dead" layer at the back surface of the silicon wherein high-energy photons and low-energy particles are absorbed without detection. An additional benefit is that the delta-doped layer can serve as a back-side electrical contact. Delta doping of p-type silicon detectors is well established. The development of the present process addresses concerns specific to the delta doping of high-purity silicon detectors, which are typically n-type. The present process involves relatively low temperatures, is fully compatible with other processes used to fabricate the detectors, and does not entail interruption of those processes. Indeed, this process can be the last stage in the fabrication of an imaging detector that has, in all other respects, already been fully processed, including metallized. This process includes molecular-beam epitaxy (MBE) for deposition of three layers, including metallization. The success of the process depends on accurate temperature control, surface treatment, growth of high-quality crystalline silicon, and precise control of thicknesses of layers. MBE affords the necessary nanometer- scale control of the placement of atoms for delta doping. More specifically, the process consists of MBE deposition of a thin silicon buffer layer, the n-type delta doping layer, and a thin silicon cap layer. The n dopant selected for initial experiments was antimony, but other n dopants as (phosphorus or arsenic) could be used. All n-type dopants in silicon tend to surface-segregate during growth, leading to a broadened dopant-concentration- versus-depth profile. In order to keep the profile as narrow as possible, the substrate temperature is held below 300 C during deposition of the silicon cap layer onto the antimony delta layer. The deposition of silicon includes a silicon- surface-preparation step, involving H-termination, that enables the growth of high-quality crystalline silicon at the relatively low temperature with close to full electrical activation of donors in the surface layer.

Blacksberg, Jordana↗
NASA NTRS1972

The response of a 300 micron silicon detector to monoenergetic neutrons determined by the use of the Monte Carlo technique

The response of a 300 micron thick silicon detector to an incident monoenergetic neutron beam is evaluated by the Monte Carlo method for the cases of both a shielded and a bare detector. The result of Monte Carlo calculation, using elastic, inelastic, and absorption reactions indicates that the response of the silicon detector to neutrons is basically due to the elastic scattering. In addition, the gamma rays generated in the shield of the detector will result in a response which is 3 or 4 orders of magnitude smaller than response to incident photons. The response of a bare silicon detector is calculated for neutron energies up to 6 MeV and bias energies from 50 to 250 KeV. It is found that the maximum response for a 300 micron thick silicon detector is less than .004 c/n within this selected neutron and bias energy range. When the pulse height defect is introduced in the calculation the results at low energy neutrons were reduced.

Tahezadeh, M.↗
NASA NTRSDate not supplied

Photonic Source for Binary Source Simulations

More than half of the sun-like stars are in binary systems or have companions that hinder the search for planets around them using traditional technologies. There are only 69 FGK dwarfs within ten pc that can harbor true earth analogs. Direct imaging can detect and study the habitability of those targets measuring the chemical composition of the atmosphere, and astrometry can measure the planet's mass. We use Multi-Star Wavefront Control (MSWC), a technique that removes stellar leakage from both stellar components to enable direct imaging of binary systems. Currently, there is a technology demonstration experiment of MSWC for the Roman coronagraph instrument at the High Contrast Imaging Testbeds operated at JPL. One of the challenges for this experiment is to produce a binary source where both stars are incoherent with each other at close physical separation. On the other hand, to measure masses, it is possible to obtain relative astrometry measurements between the binary. The TOLIMAN concept proposes to use a diffractive pupil to calibrate the distortion and detector effects to reach 1uas astrometric accuracy. JPL currently has a laboratory to demonstrate this technology, which faces the same challenge as the MSWC project of producing two incoherent nearby sources. We developed Photonic Chips with multiple waveguides in Silicon Nitride for both projects to create incoherent single sources as close as 15um. In this paper, we present the concept application, the chips design, and the first results.

photonic chips↗
NASA NTRS1998

Studies of Avalanche Photodiodes (APDS) as Readout Devices for Scintillating Fibers for High Energy Gamma-Ray Astronomy Telescopes

New gamma ray and charged particle telescope designs based on scintillating fiber arrays could provide low cost, high resolution, lightweight, very large area and multi radiation length instrumentation for planned NASA space exploration. The scintillating fibers low visible light output requires readout sensors with single photon detection sensitivity and low noise. The sensitivity of silicon Avalanche Photodiodes (APDS) matches well the spectral output of the scintillating fibers. Moreover, APDs have demonstrated single photon capability. The global aim of our work is to make available to NASA a novel optical detector concept to be used as scintillating fiber readouts and meeting the requirements of the new generations of space-borne gamma ray telescopes. We proposed to evaluate the feasibility of using RMD's small area APDs ((mu)APD) as scintillating fiber readouts and to study possible alternative (mu)APD array configurations for space borne readout scintillating fiber systems, requiring several hundred thousand to one million channels. The evaluation has been conducted in accordance with the task description and technical specifications detailed in the NASA solicitation "Studies of Avalanche Photodiodes (APD as readout devices for scintillating fibers for High Energy Gamma-Ray Astronomy Telescopes" (#8-W-7-ES-13672NAIS) posted on October 23, 1997. The feasibility study we propose builds on recent developments of silicon APD arrays and light concentrators advances at RMD, Inc. and on more than 5 years of expertise in scintillating fiber detectors. In a previous program we carried out the initial research to develop a high resolution, small pixel, solid-state, silicon APD array which exhibited very high sensitivity in the UV-VIS spectrum. This (mu)APD array is operated in Geiger mode and results in high gain (greater than 10(exp 8)), extremely low noise, single photon detection capability, low quiescent power (less than 10 (mu)W/pixel for 30 micrometers sensitive area diameter) and output in the 1-5 volt range. If successful, this feasibility study will make possible the development of a scintillating fiber detector with unsurpassed sensitivity, extremely low power usage, a crucial factor of merit for space based sensors and telescopes.

Vasile, Stefan↗
NASA NTRS2016

Novel Photon-Counting Detectors for Free-Space Communication

We present performance data for novel photon counting detectors for free space optical communication. NASA GSFC is testing the performance of three novel photon counting detectors 1) a 2x8 mercury cadmium telluride avalanche array made by DRS Inc. 2) a commercial 2880 silicon avalanche photodiode array and 3) a prototype resonant cavity silicon avalanche photodiode array. We will present and compare dark count, photon detection efficiency, wavelength response and communication performance data for these detectors. We discuss system wavelength trades and architectures for optimizing overall communication link sensitivity, data rate and cost performance. The HgCdTe APD array has photon detection efficiencies of greater than 50 were routinely demonstrated across 5 arrays, with one array reaching a maximum PDE of 70. High resolution pixel-surface spot scans were performed and the junction diameters of the diodes were measured. The junction diameter was decreased from 31 m to 25 m resulting in a 2x increase in e-APD gain from 470 on the 2010 array to 1100 on the array delivered to NASA GSFC. Mean single photon SNRs of over 12 were demonstrated at excess noise factors of 1.2-1.3.The commercial silicon APD array has a fast output with rise times of 300ps and pulse widths of 600ps. Received and filtered signals from the entire array are multiplexed onto this single fast output. The prototype resonant cavity silicon APD array is being developed for use at 1 micron wavelength.

Photons↗
NASA NTRS2007

Compact Packaging of Photonic Millimeter-Wave Receiver

A carrier structure made from a single silicon substrate is the basis of a compact, lightweight, relatively inexpensive package that holds the main optical/electronic coupling components of a photonic millimeter-wave receiver based on a lithium niobate resonator disk. The design of the package is simple and provides for precise relative placement of optical components, eliminating the need for complex, bulky positioning mechanisms like those commonly used to align optical components to optimize focus and coupling. Although a prototype of the package was fabricated as a discrete unit, the design is amenable to integration of the package into a larger photonic and/or electronic receiver system. The components (see figure) include a lithium niobate optical resonator disk of 5-mm diameter and .200- m thickness, positioned adjacent to a millimeter- wave resonator electrode. Other components include input and output coupling prisms and input and output optical fibers tipped with ball lenses for focusing and collimation, respectively. Laser light is introduced via the input optical fiber and focused into the input coupling prism. The input coupling prism is positioned near (but not in contact with) the resonator disk so that by means of evanescent-wave coupling, the input laser light in the prism gives rise to laser light propagating circumferentially in guided modes in the resonator disk. Similarly, a portion of the circumferentially propagating optical power is extracted from the disk by evanescent-wave coupling from the disk to the output coupling prism, from whence the light passes through the collimating ball lens into the output optical fiber. The lens-tipped optical fibers must be positioned at a specified focal distance from the prisms. The optical fibers and the prisms must be correctly positioned relative to the resonator disk and must be oriented to obtain the angle of incidence (55 in the prototype) required for evanescent-wave coupling of light into and out of the desired guided modes in the resonator disk. To satisfy all these requirements, precise alignment features are formed in the silicon substrate by use of a conventional wet-etching process. These features include a 5-mm-diameter, 50- m-deep cavity that holds the disk; two trapezoidal-cross-section recesses for the prisms; and two grooves that hold the optical fibers at the correct positions and angles relative to the prisms and disk. The fiber grooves contain abrupt tapers, near the prisms, that serve as hard stops for positioning the lenses at the focal distance from the prisms. There are also two grooves for prismadjusting rods. The design provides a little slack in the prism recesses for adjusting the positions of the prisms by means of these rods to optimize the optical coupling.

Nguyen, Hung↗