Search NASA⌕ Search

SEARCH · Search NASA

Results for “Soft Error Effects”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1974

Soft X-ray bremsstrahlung and fluorescent line production in the atmosphere by low energy electrons

The effect of low energy quasi-trapped or precipitating electrons which impact on the counter windows of soft X-ray detectors are discussed. The errors caused by X-rays produced in the residual atmosphere above a rocket-borne detector because of the resemblance to X-rays of cosmic origin are examined. The design and development of counter windows which make it possible to identify the atmospherically produced X-rays are described. Curves are presented to show the following: (1) preliminary low energy electron data from Atmospheric Explorer C, (2) X-ray flux in electron-excited nitrogen and oxygen, (3) typical proportional counter response to low energy cosmic rays, and (4) proportional counter response to X-radiation produced by electrons incident upon a gas of oxygen to nitrogen number of 0.4.

Kraushaar, W. L.↗
NASA NTRS1984

Fault-tolerant system considerations for a redundant strapdown inertial measurement unit

The development and evaluation of a fault-tolerant system for the Redundant Strapdown Inertial Measurement Unit (RSDIMU) being developed and evaluated by the NASA Langley Research Center was continued. The RSDIMU consists of four two-degree-of-freedom gyros and accelerometers mounted on the faces of a semi-octahedron which can be separated into two halves for damage protection. Compensated and uncompensated fault-tolerant system failure decision algorithms were compared. An algorithm to compensate for sensor noise effects in the fault-tolerant system thresholds was evaluated via simulation. The effects of sensor location and magnitude of the vehicle structural modes on system performance were assessed. A threshold generation algorithm, which incorporates noise compensation and filtered parity equation residuals for structural mode compensation, was evaluated. The effects of the fault-tolerant system on navigational accuracy were also considered. A sensor error parametric study was performed in an attempt to improve the soft failure detection capability without obtaining false alarms. Also examined was an FDI system strategy based on the pairwise comparison of sensor measurements. This strategy has the specific advantage of, in many instances, successfully detecting and isolating up to two simultaneously occurring failures.

Motyka, P.↗
NASA NTRS2017

Single Event Effect Testing of the Analog Devices ADV212

The Analog Devices ADV212 was initially tested for single event effects (SEE) at the Texas AM University Cyclotron Facility (TAMU) in July of 2013. Testing revealed a sensitivity to device hang-ups classified as single event functional interrupts (SEFI), soft data errors classified as single event upsets (SEU), and, of particular concern, single event latch-ups (SEL). All error types occurred so frequently as to make accurate measurements of the exposure time, and thus total particle fluence, challenging. To mitigate some of the risk posed by single event latch-ups, circuitry was added to the electrical design to detect a high current event and automatically recycle power and reboot the device. An additional heavy-ion test was scheduled to validate the operation of the recovery circuitry and the continuing functionality of the ADV212 after a substantial number of latch-up events. As a secondary goal, more precise data would be gathered by an improved test method, described in this test report.

single event latch-ups (SEL)↗
NASA NTRS2010

Scaled CMOS Technology Reliability Users Guide

The desire to assess the reliability of emerging scaled microelectronics technologies through faster reliability trials and more accurate acceleration models is the precursor for further research and experimentation in this relevant field. The effect of semiconductor scaling on microelectronics product reliability is an important aspect to the high reliability application user. From the perspective of a customer or user, who in many cases must deal with very limited, if any, manufacturer's reliability data to assess the product for a highly-reliable application, product-level testing is critical in the characterization and reliability assessment of advanced nanometer semiconductor scaling effects on microelectronics reliability. A methodology on how to accomplish this and techniques for deriving the expected product-level reliability on commercial memory products are provided.Competing mechanism theory and the multiple failure mechanism model are applied to the experimental results of scaled SDRAM products. Accelerated stress testing at multiple conditions is applied at the product level of several scaled memory products to assess the performance degradation and product reliability. Acceleration models are derived for each case. For several scaled SDRAM products, retention time degradation is studied and two distinct soft error populations are observed with each technology generation: early breakdown, characterized by randomly distributed weak bits with Weibull slope (beta)=1, and a main population breakdown with an increasing failure rate. Retention time soft error rates are calculated and a multiple failure mechanism acceleration model with parameters is derived for each technology. Defect densities are calculated and reflect a decreasing trend in the percentage of random defective bits for each successive product generation. A normalized soft error failure rate of the memory data retention time in FIT/Gb and FIT/cm2 for several scaled SDRAM generations is presented revealing a power relationship. General models describing the soft error rates across scaled product generations are presented. The analysis methodology may be applied to other scaled microelectronic products and their key parameters.

Microelectronics Reliability↗
NASA NTRS1991

Multiple single event upsets in CMOS static rams

The occurrence of multiple upset errors during ground tests can contaminate the data and lead to error cross sections which are too high. In space, multiple errors may produce higher upsets than predicted and if they occur in single words they can defeat error detection and correction hardware. This investigation involves data which were taken during an experimental study of dose imprint effects in static memories. The results show that multiple errors occurred mainly for heavy ions with high linear energy transfers and with the majority of these in the soft upset sections of the dose-imprinted memory samples. The percentages of the total number of errors which were singles, doubles, and triplets, were determined as a function of LET, dose, and soft or hard section of the devices. The experimental observations are compared to the predictions of simple binomial statistics.

Stassinopoulos, E. G.↗
NASA NTRS1998

Overview of Device SEE Susceptibility from Heavy Ions

A fifth set of heavy ion single event effects (SEE) test data have been collected since the last IEEE publications (1,2,3,4) in December issues for 1985, 1987, 1989, and 1991. Trends in SEE susceptibility (including soft errors and latchup) for state-of-the-art parts are evaluated.

Nichols, D. K.↗
NASA NTRS1981

Annual Conference on Nuclear and Space Radiation Effects, 18th, University of Washington, Seattle, WA, July 21-24, 1981, Proceedings

Single event upset phenomena are discussed, taking into account cosmic ray induced errors in IIL microprocessors and logic devices, single event upsets in NMOS microprocessors, a prediction model for bipolar RAMs in a high energy ion/proton environment, the search for neutron-induced hard errors in VLSI structures, soft errors due to protons in the radiation belt, and the use of an ion microbeam to study single event upsets in microcircuits. Basic mechanisms in materials and devices are examined, giving attention to gamma induced noise in CCD's, the annealing of MOS capacitors, an analysis of photobleaching techniques for the radiation hardening of fiber optic data links, a hardened field insulator, the simulation of radiation damage in solids, and the manufacturing of radiation resistant optical fibers. Energy deposition and dosimetry is considered along with SGEMP/IEMP, radiation effects in devices, space radiation effects and spacecraft charging, EMP/SREMP, and aspects of fabrication, testing, and hardness assurance.

Tasca, D. M.↗
NASA NTRS1982

Fault-tolerance memory system architecture for radiation induced errors

A fault-tolerant memory (FTM) architecture is presented which can be used to overcome soft memory errors induced by alpha particles, cosmic radiation, or other random sources. The characteristics of the FTM are presented, a mathematical model is developed, and numerical examples are considered to illustrate the effectiveness of the approach. The FTM architecture has been incorporated in the NASA Standard Spacecraft Computer (NSSC-II) which will be employed in a variety of future space payloads and experiments.

White, J. B., Jr.↗
NASA NTRS1984

Computing in the presence of soft bit errors

It is shown that single-event-upsets (SEUs) due to cosmic rays are a significant source of single bit error in spacecraft computers. The physical mechanism of SEU, electron hole generation by means of Linear Energy Transfer (LET), it discussed with reference made to the results of a study of the environmental effects on computer systems of the Galileo spacecraft. Techniques for making software more tolerant of cosmic ray effects are considered, including: reducing the number of registers used by the software; continuity testing of variables; redundant execution of major procedures for error detection; and encoding state variables to detect single-bit changes. Attention is also given to design modifications which may reduce the cosmic ray exposure of on-board hardware. These modifications include: shielding components operating in LEO; removing low-power Schottky parts; and the use of CMOS diodes. The SEU parameters of different electronic components are listed in a table.

Rasmussen, R. D.↗
NASA NTRS1988

Acoustic measurement of the surface tension of levitated drops

The measurement of the frequency of the fundamental mode of shape oscillation of acoustically levitated drops has been carried out to determine the surface tension of the drop material. Sound fields of about 20 kHz in frequency allow the suspension of drops a few millimeters in size, as well as the necessary drive for oscillations. The surface tension of water, hexadecane, silicone oil, and aqueous solutions of glycerin levitated in air has been measured, and the results have been compared with those obtained with standard ring tensiometry. The two sets of data are in good agreement, the largest discrepancy being about 10 percent. Uncertainties in the effects of the nonspherical static shape of drops levitated in the earth's gravitational field and the rotation state of the sample are the major contributors to the experimental error. A decrease of the resonance frequency of the fundamental mode indicates a soft nonlinearity as the oscillation amplitude increases.

Trinh, E. H.↗
NASA NTRS1983

Microcircuit radiation effects databank

This databank is the collation of radiation test data submitted by many testers and serves as a reference for engineers who are concerned with and have some knowledge of the effects of the natural radiation environment on microcircuits. It contains radiation sensitivity results from ground tests and is divided into two sections. Section A lists total dose damage information, and section B lists single event upset cross sections, I.E., the probability of a soft error (bit flip) or of a hard error (latchup).

Source record↗
NASA NTRS2005

Enabling Pinpoint Landing (PPL) on Mars

Pinpoint landing (PPL) missions will deliver about 1000 kg of useful payload to the surface of Mars. Mid-to-high latitude landing site compatibility is sought which should provide the means to land at sites up to 2.5 km above Mars mean surface altitude. A dispersion and control analysis process is presented which helps to identify the effects of PPL error drivers, quantify the effect of dispersions on landing error and quantify the landing position control capability/authority along the entry path. An entry/descent/landing (EDL) profile is provided. Guided aeroshell is the baseline for all candidate Mars atmospheric entry architectures. A two-stage architecture is considered for the aerodynamic decelerator descent phase: supersonic parachute plus guided subsonic parachute or high-Mach inflatable decelerator plus guided subsonic parachute. The powered descent phase uses propulsive descent stage for soft landing and final error reduction maneuvers. Studies have found that the aeroshell entry face dispersions can be large, but closed-loop guidance can null out resulting errors to within about 2 km. Additionally, projected parachute control is inadequate to correct worst case dispersions without wind forecast data. To mitigate the problems dispersions due to atmospheric uncertainty can be reduced by providing on-board external means to measure density and winds ahead of the vehicle, higher L/D control authority options for the subsonic parachute phase can be investigated, and decelerators with control authority options for the supersonic descent phase can be examined. A navigation error analysis and wind effects summary are included.

aerodynamic↗
NASA NTRS1982

Study of and proposals for the correction of errors in a radar ranging device designed to facilitate docking of a teleoperator maneuvering system

A frequency modulated continuous wave radar system was developed. The system operates in the 35 gigahertz frequency range and provides millimeter accuracy range and range rate measurements. This level of range resolution allows soft docking for the proposed teleoperator maneuvering system (TMS) or other autonomous or robotic space vehicles. Sources of error in the operation of the system which tend to limit its range resolution capabilities are identified. Alternative signal processing techniques are explored with emphasis on determination of the effects of inserting various signal filtering circuits in the system. The identification and elimination of an extraneous low frequency signal component created as a result of zero range immediate reflection of radar energy from the surface of the antenna dish back into the mixer of the system is described.

Mcdonald, M. W.↗
NASA NTRS1984

Soft-error generation due to heavy-ion tracks in bipolar integrated circuits

Both bipolar and MOS integrated circuits have been empirically demonstrated to be susceptible to single-particle soft-error generation, commonly referred to as single-event upset (SEU), which is manifested in a bit-flip in a latch-circuit construction. Here, the intrinsic characteristics of SEU in bipolar (static) RAM's are demonstrated through results obtained from the modeling of this effect using computer circuit-simulation techniques. It is shown that as the dimensions of the devices decrease, the critical charge required to cause SEU decreases in proportion to the device cross-section. The overall results of the simulations are applicable to most integrated circuit designs.

Zoutendyk, J. A.↗
NASA NTRS1978

Annual Conference on Nuclear and Space Radiation Effects, 15th, University of New Mexico, Albuquerque, N. Mex., July 18-21, 1978, Proceedings

Radiation effects in MOS devices and circuits are considered along with radiation effects in materials, space radiation effects and spacecraft charging, SGEMP, IEMP, EMP, fabrication of radiation-hardened devices, radiation effects in bipolar devices and circuits, simulation, energy deposition, and dosimetry. Attention is given to the rapid anneal of radiation-induced silicon-sapphire interface charge trapping, cosmic ray induced errors in MOS memory cells, a simple model for predicting radiation effects in MOS devices, the response of MNOS capacitors to ionizing radiation at 80 K, trapping effects in irradiated and avalanche-injected MOS capacitors, inelastic interactions of electrons with polystyrene, the photoelectron spectral yields generated by monochromatic soft X radiation, and electron transport in reactor materials.

Simons, M.↗
NASA NTRS1978

Quasi-optimal decoding of linear block codes using soft decision detection

A simple but effective decoding procedure, applicable to any (n,k) linear block code with symbols from GF(q), is described. The technique involves a transformation of the parity check equations which focuses the code's correction power on the soft symbol set while still retaining the capability to correct one symbol error from outside this set. The soft symbol set is defined to be the n-k least reliably detected code symbol positions whose parity check row-spaces are linearly independent. The process generates a number of error vector screening candidates, each a solution to the parity check equations, and the maximum-likelihood candidate is accepted.

Greene, E. P.↗
NASA NTRS1991

Soft X Ray Telescope (SXT) focus error analysis

The analysis performed on the soft x-ray telescope (SXT) to determine the correct thickness of the spacer to position the CCD camera at the best focus of the telescope and to determine the maximum uncertainty in this focus position due to a number of metrology and experimental errors, and thermal, and humidity effects is presented. This type of analysis has been performed by the SXT prime contractor, Lockheed Palo Alto Research Lab (LPARL). The SXT project office at MSFC formed an independent team of experts to review the LPARL work, and verify the analysis performed by them. Based on the recommendation of this team, the project office will make a decision if an end to end focus test is required for the SXT prior to launch. The metrology and experimental data, and the spreadsheets provided by LPARL are used at the basis of the analysis presented. The data entries in these spreadsheets have been verified as far as feasible, and the format of the spreadsheets has been improved to make these easier to understand. The results obtained from this analysis are very close to the results obtained by LPARL. However, due to the lack of organized documentation the analysis uncovered a few areas of possibly erroneous metrology data, which may affect the results obtained by this analytical approach.

Ahmad, Anees↗