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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS2000

Ultra-High Density Holographic Memory Module with Solid-State Architecture

NASA's terrestrial. space, and deep-space missions require technology that allows storing. retrieving, and processing a large volume of information. Holographic memory offers high-density data storage with parallel access and high throughput. Several methods exist for data multiplexing based on the fundamental principles of volume hologram selectivity. We recently demonstrated that a spatial (amplitude-phase) encoding of the reference wave (SERW) looks promising as a way to increase the storage density. The SERW hologram offers a method other than traditional methods of selectivity, such as spatial de-correlation between recorded and reconstruction fields, In this report we present the experimental results of the SERW-hologram memory module with solid-state architecture, which is of particular interest for space operations.

Markov, Vladimir B.↗
DOE OSTI2024

Algorithmic optimization of quantum optical storage in solids

Quantum memory devices with high storage efficiency and bandwidth are essential elements for future quantum networks. Solid-state quantum memories can provide broadband storage, but they primarily suffer from low storage efficiency. We use passive optimization and algorithmic optimization techniques to demonstrate nearly a sixfold enhancement in quantum memory efficiency. In this regime, we demonstrate coherent and single-photon-level storage with a high signal-to-noise ratio. The optimization technique presented here can be applied to most solid-state quantum memories to significantly improve the storage efficiency without compromising the memory bandwidth. Published by the American Physical Society 2024

Lei, Yisheng↗
DOE OSTI2019

Molecularly Thin Electrolyte for All Solid-State Nonvolatile Two-Dimensional Crystal Memory

A molecularly thin electrolyte is developed to demonstrate a nonvolatile, solid-state, one-transistor (1T) memory based on an electric-double-layer (EDL) gated WSe 2 field-effect transistor (FET). The custom-designed monolayer electrolyte consists of cobalt crown ether phthalocyanine and lithium ions, which are positioned by field-effect at either the surface of the WSe 2 channel or an h-BN capping layer to achieve “1” or “0”, respectively. Bistability in the monolayer electrolyte memory is significantly improved by the h-BN cap with density functional theory (DFT) calculations showing enhanced trapping of Li+ near h-BN due to a ~1.34 eV increase in the absolute value of the adsorption energy compared to vacuum. The threshold voltage shift between the two states corresponds to a change in charge density of ~2.5 × 10 12 cm –2 , and an On/Off ratio exceeding 10 4 at a back gate voltage of 0 V. The On/Off ratio remains stable after 1000 cycles and the retention time for each state exceeds 6 h (max measured). Furthermore, when the write time approaches 1 ms, the On/Off ratio remains >10 2 , showing that the monolayer electrolyte-gated FET can respond on time scales similar to existing flash memory. The data suggest that faster switching times and lower switching voltages could be feasible by top gating.

2D crystal↗
DOE OSTI2025

Scalable low-loss cryogenic packaging of quantum memories in CMOS-foundry processed photonic chips

Optically linked solid-state quantum memories such as color centers in diamond are a promising platform for distributed quantum information processing and networking. Photonic integrated circuits (PICs) have emerged as a crucial enabling technology for these systems, integrating quantum memories with efficient electrical and optical interfaces in a compact and scalable platform. Packaging these hybrid chips into deployable modules while maintaining low optical loss and resiliency to temperature cycling is a central challenge to their practical use. We demonstrate a packaging method for PICs using surface grating couplers and angle-polished fiber arrays that is robust to temperature cycling, offers scalable channel count, applies to a wide variety of PIC platforms and wavelengths, and offers pathways to automated high-throughput packaging. Using this method, we show optically and electrically packaged quantum memory modules integrating all required qubit controls on chip, operating at millikelvin temperatures with <3 dB losses achievable from fiber to quantum memory for the TE 0 mode at a wavelength of 737 nm.

Bernson, Robert [Tyndall National Institute, Cork ↗
DOE OSTI2025

Spin-optomechanical cavity interfaces by deep subwavelength phonon-photon confinement

A central goal of quantum information science is transferring qubits between space, time, and modality. Spin-based systems in solids are promising quantum memories, but high-fidelity transfer of their quantum states to telecom optical fields remains challenging. Here, we introduce a phonon-mediated interface between spins in a diamond nanobeam optomechanical crystal and telecom optical fields by a simultaneous deep-subwavelength confinement of optical and acoustic fields with mode volumes $V_{\textrm{mech}}$$/Λ^3_\textrm{p} ~ 10^{-5}$ and $V_{\textrm{opt}}$$/λ^3 ~ 10^{−3}$, respectively. This confinement boosts the spin-mechanical coupling rate of Group-IV silicon vacancy (SiV − ) centers by an order of magnitude to ~ 32 MHz while retaining high acousto-optical couplings. The optical cavity couples to the spin irrespective of the emitter’s native excited states, avoiding spectral diffusion. Using Quantum Monte Carlo simulations, we estimate heralded entanglement fidelities exceeding 0.96 between two such interfaces. We anticipate broad utility beyond diamond emitter-telecom systems to most solid-state quantum memories.

Raniwala, Hamza [Massachusetts Inst. of Technology↗
NASA NTRS1993

A Magnetic Solid-State Storage Technology: Vertical Bloch Line Storage

No storage technology is known to exist today which simultaneously offers high-storage density, nonvolatility, and a solid-state form factor. For example, common random access memories are solid-state, but are volatile and typically offer modest density. Alternatively, mainstream magnetic disk and magnetic tape systems offer high storage density and nonvolatility, but are fundamentally not solid-state. A number of applications exist which would be suited well with high performance solid- state technology. NASA, for example, is beginning baseline solid-state recorders for upcoming space missions, such as the Cassini mission to Saturn.

Katti, R. R.↗
DOE OSTI2025

Erbium quantum memory platform with long optical coherence via back-end-of-line deposition on foundry-fabricated photonics

Realizing scalable quantum interconnects necessitates the integration of solid-state quantum memories with foundry photonics processes. While prior photonic integration efforts have relied upon specialized, laboratory-scale fabrication techniques, this work demonstrates the monolithic integration of a quantum memory platform with low-loss foundry photonic circuits via back-end-of-line deposition. We deposited thin films of titanium dioxide (Ti⁢O 2 ) doped with erbium (Er) onto silicon nitride nanophotonic waveguides and studied Er optical coherence at subkelvin temperatures with photon echo techniques. Furthermore, we suppressed optical dephasing through ex-situ oxygen annealing and optimized measurement conditions, which yielded an optical coherence time of 64 μ⁢s (a 5-kHz homogeneous linewidth) and slow spectral diffusion of 27 kHz over 4 ms, results that are comparable to state-of-the-art Er nanophotonic devices. Combined with second-long electron spin lifetimes and demonstrated electrical control of Er emission, our findings establish Er:Ti⁢O 2 on foundry photonics as a manufacturable platform for ensemble and single-ion quantum memories.

Electro-optic effects↗
DOE OSTI2025

HDF5 in the exascale era: Delivering efficient and scalable parallel I/O for exascale applications

Accurately modeling real-world systems requires scientific applications at exascale to generate massive amounts of data and manage data storage efficiently. However, parallel input and output (I/O) faces challenges due to new application workflows and the state-of-the-art memory, interconnect, and storage architectures considered in exascale designs. The storage hierarchy has expanded with node-local persistent memory, solid-state storage, and traditional disk and tape-based storage, thus requiring efficiency at each layer and much more efficient data movement among these layers. This paper discusses how the ExaHDF5 project improved the I/O performance and data management for exascale architectures by enhancing HDF5, a widely used parallel I/O library. The team developed an Asynchronous I/O Virtual Object Layer (VOL) connector that allowed overlapping I/O with computation. They also created a Cache VOL to complement asynchronous I/O by incorporating fast storage layers, such as burst buffer and node-local storage, into the parallel I/O workflow through caching and staging data. Additionally, the team enabled data aggregation and I/O at the node level by using a Subfiling Virtual File Driver (VFD). To demonstrate superior I/O performance with HDF5 at exascale, the ExaHDF5 team collaborated with several exascale applications. In this paper, we show I/O performance improvements for three applications: Cabana (a particle-based simulation library), EQSIM (a regional earthquake simulation software), and E3SM (a climate system modeling library).

Asynchronous I/Ol↗
DOE OSTI2024

Telecom Networking with a Diamond Quantum Memory

Practical quantum networks require interfacing quantum memories with existing channels and systems that operate in the telecom band. Here we demonstrate low-noise, bidirectional quantum frequency conversion that enables a solid-state quantum memory to directly interface with telecom-band systems. In particular, we demonstrate conversion of visible-band single photons emitted from a silicon-vacancy ( Si V ) center in diamond to the telecom O band, maintaining low noise ( g 2 ( 0 ) < 0.1 ) and high indistinguishability ( V = 89 ± 8 % ). We further demonstrate the utility of this system for quantum networking by converting telecom-band time-bin pulses, sent across a lossy and noisy 50-km deployed fiber link, to the visible band and entangling them with a diamond quantum memory with fidelity F ≥ 87 ± 2.5 % . These results demonstrate the viability of Si V quantum memories integrated with telecom-band systems for scalable quantum networking applications. Published by the American Physical Society 2024

Physics↗
NASA NTRS1991

Magnetic Analog Random-Access Memory

Proposed integrated, solid-state, analog random-access memory base on principle of magnetic writing and magnetoresistive reading. Current in writing conductor magnetizes storage layer. Remanent magnetization in storage layer penetrates readout layer and detected by magnetoresistive effect or Hall effect. Memory cells are part of integrated circuit including associated reading and writing transistors. Intended to provide high storage density and rapid access, nonvolatile, consumes little power, and relatively invulnerable to ionizing radiation.

Katti, Romney R.↗
DOE OSTI2026

Thin-film lithium niobate on diamond as a platform for efficient spin-phonon coupling

Negatively charged silicon vacancy (SiV − ) centers in diamond are leading candidates for solid-state quantum memory that can be controlled using electromagnetic or acoustic waves. The latter are particularly promising due to the strong strain response of SiV − , enabling large spin-phonon interaction strengths. Indeed, coherent spin control via surface acoustic waves (SAWs) has been demonstrated and is essential for developing on-chip phononic quantum networks. However, the absence of piezoelectricity in diamond requires an interface with a piezoelectric material for efficient transduction and delivery of acoustic waves to spins in diamonds. Here, we demonstrate a heterogeneously integrated phononic platform that combines thin-film lithium niobate with diamond to enable acoustic control of single SiV − spins. Additionally, leveraging large SAW-induced strain at the location of SiV − , we achieve coherent acoustic control of an electron spin with more than twofold improvement in Rabi frequency compared to state-of-the-art devices based on aluminum nitride on diamond. Furthermore, this work represents a crucial step towards realizing phonon-based quantum information processing systems.

Optically detected magnetic resonance↗
NASA NTRS1980

Applications of satellite data relay to problems of field seismology

A seismic signal processor was developed and tested for use with the NOAA-GOES satellite data collection system. Performance tests on recorded, as well as real time, short period signals indicate that the event recognition technique used is nearly perfect in its rejection of cultural signals and that data can be acquired in many swarm situations with the use of solid state buffer memories. Detailed circuit diagrams are provided. The design of a complete field data collection platform is discussed and the employment of data collection platforms in seismic network is reviewed.

Webster, W. J., Jr.↗
NASA NTRS1981

A seismic signal processor suitable for use with the NOAA/GOES satellite data collection system

Because of the high data-rate requirements, a practical system capable of collecting seismic information in the field and relaying it, via satellite, to a central collection point is not yet available. A seismic signal processor has been developed and tested for use with the NOAA/GOES satellite data collection system. Performance tests on recorded, as well as real time, short period signals indicate that the event recognition technique used is nearly perfect in its rejection of environmental noise and other non-seismic signals and that, with the use of solid state buffer memories, data can be acquired in many swarm situations. The design of a complete field data collection platform is discussed based on the prototype evaluation.

Webster, W. J., Jr.↗
NASA NTRS1994

Reconfigurable Full-Page Braille Displays

Electrically actuated braille display cells of proposed type arrayed together to form full-page braille displays. Like other braille display cells, these provide changeable patterns of bumps driven by digitally recorded text stored on magnetic tapes or in solid-state electronic memories. Proposed cells contain electrorheological fluid. Viscosity of such fluid increases in strong electrostatic field.

Garner, H. Douglas↗
NASA NTRS1994

Vertical Bloch Line Storage Technology

Vertical Bloch Line storage is an emerging technology which has the potential for offering a number of desired data storage attributes in a single chip.

Vertical Block Line solid-state memory storage den↗
NASA NTRS1994

Space Data Storage Systems and Technologies

A central aspect of most space missions is the acquisition from space of unique mission-specific data and the subsequent return of these data to Earth.

storage ranging from magnetic tape to solid-state ↗
NASA NTRS1993

Reversible non-volatile switch based on a TCNQ charge transfer complex

A solid-state synaptic memory matrix (10) having switchable weakly conductive connections at each node (24) whose resistances can be selectably increased or decreased over several orders of magnitude by control signals of opposite polarity, and which will remain stable after the signals are removed, comprises an insulated substrate (16), a set of electrical conductors (14) upon which is deposited a layer (18) of an organic conducting polymer, which changes from an insulator to a conductor upon the transfer of electrons, such as polymerized pyrrole doped with 7,7,8,8-tetracyanoquinodimethane (TCNQ), covered by a second set of conductors (20) laid at right angles to the first.

Nagasubramanian, Ganesan↗