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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Wide-band power combining units for Ka-band are simulated for use as MMIC amplifier applications. Short-slot couplers as well as magic-tees are the basic elements for the combiners. Wide bandwidth (5 GHz) and low insertion (approx.0.2 dB) and high combining efficiencies (approx.90 percent) are obtained.
The traveling-wave tube (TWT) is a vacuum device invented in the early 1940's used for amplification at microwave frequencies. Amplification is attained by surrendering kinetic energy from an electron beam to a radio frequency (RF) electromagnetic wave. The demand for vacuum devices has been decreased largely by the advent of solid-state devices. However, although solid state devices have replaced vacuum devices in many areas, there are still many applications such as radar, electronic countermeasures and satellite communications, that require operating characteristics such as high power (Watts to Megawatts), high frequency (below 1 GHz to over 100 GHz) and large bandwidth that only vacuum devices can provide. Vacuum devices are also deemed irreplaceable in the music industry where musicians treasure their tube-based amplifiers claiming that the solid-state and digital counterparts could never provide the same "warmth" (3). The term traveling-wave tube includes both fast-wave and slow-wave devices. This article will concentrate on slow-wave devices as the vast majority of TWTs in operation fall into this category.
Performance of solid-state imaging device enhanced by coating surface through which photons enter with thin film of carbon or diamondlike carbon. Film beneficial in two ways: acts as antireflection coat, and helps to dissipate undesired static electric charges that otherwise accumulate on surface.
Solid state and vacuum tube output devices for communication satellites
Nonreciprocal devices using solid state magnetoplasmas at millimeter and submillimeter wavelengths
Solid-state device developed for high-speed acquisition, dynamic storage, and amplification of three-dimensional holographic images. Holograms generated via four-wave mixing in two or more photorefractive crystals (or subelements of single crystal) to create single-crystal or multicrystal oscillator. Apparatus provides dynamic storage of holographic image of object after electronic shutter closed to turn off object beam. Provides capability to store, amplify, process, and transmit time-varying, two-dimensional, spatial information. Developments include sensors, actuators, and optical computers operating at speeds on order of speed of light. Potential in applications in which need for high-speed acquisition and storage of three-dimensional holographic images.
The development of solid state microwave power amplifiers for a solar power satellite transmitting antenna is discussed. State-of-the-art power-added efficiency, gain, and single device power of various microwave solid state devices are compared. The GaAs field effect transistors and the Si-bipolar transistors appear potentially feasible for solar power satellite use. The integration of solid state devices into antenna array elements is examined and issues concerning antenna integration and consequent satellite configurations are examined.
Dual-element power devices for solid state inverters, evaluating potential hazards of reverse second breakdown
A light-weight, inexpensively fabricated, hermetically sealable, repairable package for small electronic or electromechanical units, having multiple connections, is described. A molded ring frame of polyamide-imide plastic (Torlon) is attached along one edge to a base plate formed of a highly heat conducting material, such as aluminum or copper. Bores are placed through a base plate within the area of the edge surface of ring frame which result in an attachment of the ring frame to the base plate during molding. Electrical leads are molded into the ring frame. The leads are L-shaped gold-plated copper wires imbedded within widened portions of the side wall of the ring frame. Within the plastic ring frame wall the leads are bent (typically, though not necessarily at 90 deg) so that they project into the interior volume of the ring frame for connection to the solid state devices.
This project developed Cd-free quantum dot (QD) downconverters for efficacious human-centric lighting (HCL) light emitting diode (LED) devices. Solid state HCL devices address the lack of light in the cyan wavelength region (460-490 nm) in white LEDs by enhancing the melanopic daylight efficacy ratio (MDER) value. MDER is a metric that indicates the degree to which artificial lighting stimulates nonvisual biological processes in the retina responsible for regulating circadian rhythms compared with natural lighting. The peak sensitivity of melanopsin in the retina is at 479 nm, therefore artificial lighting which can fill the well-known “cyan gap” may improve human health. Due to the Restriction of Hazardous Substances (RoHS) regulations, cadmium-free core/shell/shell QDs are the primary targets for low toxicity, tunable downconverters. Cyan- and red-emitting core/shell/shell QDs were implemented in LED devices toward achieving a brightness of 210 lm/W at 4000 K, CRI 90, and MDER > 0.7. Synthetic development of Cd-free materials yielded cyan InP/ZnS QDs with a photoluminescence quantum yield (PLQY) of ~60% between 480-490 nm, and red InP/ZnSe/(ZnSeS)/ZnS QDs reaching ~80% PLQY at 620-630 nm. We successfully demonstrated that the inclusion of cyan QDs increased the MDER value to ≥0.7, but the brightness of the HCL LED devices was hindered due to low PLQY values. However, upon substitution of the Cd-free cyan QD with a low-Cd QD with >90% PLQY, brightness improved by 25% over the Cd-free device to 179 lm/W. Despite the technical obstacles remaining toward improving emission characteristics and stability of QDs under high flux, we have confirmed the promise of narrow, tunable QD emitters in SSL packages toward the goal of healthy, human-centric lighting.
The modulation of channel conductance in field-effect transistors (FETs) via metal-insulator-semiconductor structures has revolutionized information processing and storage. However, the limitations of silicon-based FETs in electrical switching have driven the search for new materials capable of overcoming these constraints. Electrostatic gating of competing electronic phases in a Mott material near its metal-to-insulator transition (MIT) offers the prospects of substantial modulation of the conducting electrons and electrical resistivity through small changes in band filling. While electrostatic control of the MIT has been previously reported, the advancement of Mott materials toward novel Mott-based transistors, MottFETs requires the realization of their unique physical properties in a solid-state device. In this study, we present gate control of electron correlation using a solid-state device utilizing the oxide Mott system La 1-x Sr x VO 3 as a correlated FET channel. We report on a gate resistance response that cannot be explained in a purely electrostatic framework. This behavior suggests an enhancement in effective mass and a reduction in effective carrier density as the system approaches its insulating state, consistent with theoretical predictions for Mott systems, suggesting at least 100× charge gain originating from the correlated behavior. These preliminary results pave the way toward the development of highly efficient, low-power electronic devices that could surpass the performance bottlenecks of conventional FETs by leveraging the electronic phase transitions of correlated electron systems.
Improvements for low current detector components - high megohm resistors, electrometer tubes, solid state devices, modulators, electron multipliers, insulators, and high impedance switching devices
A design is presented for a semi-integrated millimeter/submillimeter wavelength receiver/transmitter front end incorporating a planar antenna and a solid-state device in an efficient feed structure which can be matched directly to high f-number optical systems. The feed system combines the simplicity and robustness of a dielectric substrate lens with the high gain of a parabolic reflector in a single structure that is termed a dielectric-filled parabola. The same fundamental unit can be configured as either a heterodyne or direct detection mode receiver, a power transmitter or a frequency multiplier by changing out the solid-state device and/or the integrated antenna. The structure can also be used with a small integrated antenna array in a multibeam or imaging arrangement. Design and fabrication details for the feed system are given. These are followed by beam pattern and impedance measurements taken on a microwave model when dipole, bow-tie, log-periodic, and log-spiral antennas are used as the integrated feed elements.
Effect of varying epitaxial deposition parameters on reliability of silicon planar solid state devices
A survey was made of the state-of-the-art in millimeter (20 GHz to 300 GHz) wave transmission systems and related devices. The survey includes summaries of analytical studies and theoretical results that were obtained for various transmission line structures. This material was supplemented by further analysis where appropriate. The transmission line structures are evaluated in terms of electrical performance, ease of manufacture, usefulness for building other devices and compatibility with solid state devices. Descriptions of waveguide transmission lines which have commonly been used in the microwave frequency range are provided along with special attention given to the problems that these guides face when their use is extended into the millimeter wave range. Also, guides which have been introduced specifically to satisfy the requirements of millimeter wave transmission are discussed in detail.
Low noise amplifiers, laser radar optics, gas lasers and holography, and microminiaturized solid state devices for radio electronics
High voltage, high current switching devices using semiconductor controlled rectifiers
Solid state bulk and semiconductor junction phenomena evaluated for advanced NASA sensors and transducers