SEARCH · Search NASA
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Data resulting from a continuing effort to provide system/subsystem definition data to aid in the evaluation of the SPS program concept is presented. The specific data described relate to the proposed use of solid state devices as microwave power amplifiers in the satellite microwave power transmission subsystem.
State-of-the-art performance is demonstrated with solid-state amplifiers in K-band. The amplifier provides 8.2 watts of power with 39 dB gain over a frequency band of 1.4 GHz. Nonlinearity analyses of solid-state amplifiers suggest that system performance can be improved significantly by using an FET amplifier. Preliminary investigations reveal that the solid-state amplifiers can be space-qualified and can be expected to replace the TWTA in many communication links in the near future. It is pointed out that with improvements in device technology, the power, bandwidth and efficiency of solid-state amplifiers using FETs can be further improved. With FETs operating at a junction temperature of less than 125 C, solid-state amplifiers are inherently reliable, indicating a ten-year mean time to failure.
Performance results and design considerations are presented for an all solid-state Ku-band power amplifier which is feasible for use in PM communication systems for airborne or spacecraft transmitter applications. A six-stage GaAs FET preamplifier and a driver and balanced power amplifier utilizing GaAs IMPATT diodes operating in the injection locked oscillator mode are discussed. For high power and efficiency Schottky-Read IMPATT's with low-high-low doping profiles are employed. For improved reliability the IMPATT's incorporate a TiW barrier metallization to retard degradation of the IMPATT's. Results of accelerated life testing of the IMPATT devices are also presented.
The feasibility of developing solid-state amplifiers at 4 and 10 GHz for application in spacecraft altimeters was studied. Bipolar-transistor, field-effect-transistor, and Impatt-diode amplifier designs based on 1980 solid-state technology are investigated. Several output power levels of the pulsed, low-duty-factor amplifiers are considered at each frequency. Proposed transistor and diode amplifier designs are illustrated in block diagrams. Projections of size, weight, and primary power requirements are given for each design.
This program is the result of the continuing demand and future requirement for a high data rate 60-GHz communications link. A reliable solid-state transmitter which delivers the necessary power over a wide bandwidth using the present IMPATT diode technology required the development of combining techniques. The development of a 60-GHz IMPATT power combiner amplifier is detailed. The results form a basis from which future wideband, high-power IMPATT amplifiers may be developed. As a result, several state-of-the-art advancements in millimeter-wave components technology were achieved. Specific achievements for the amplifier integration were: development of a nonresonant divider/combiner circuit; reproducible multiple junction circulator assemblies; and reliable high power 60-GHz IMPATT diodes. The various design approaches and tradeoffs which lead to the final amplifier configuration are discussed. A detailed circuit design is presented for the various amplifier components, and the conical line combiner, radial line combiner, and circulator development are discussed. The performance of the amplifier, the overall achievement of the program, the implications of the results, and an assessment of future development needs and recommendations are examined.
X-band system amplifies low-duty-cycle pulses. Amplifier chain consists of driver-amplifier section using GaAs FET's with hybrid couplers, and power-amplifier section using IMPATT diodes with circulators for input/output coupling and for isolation between stages. Solid-state X-band amplifier package constitutes reliable, lightweight, compact, RF source. Used for many applications involving low-and variable-duty-cycle operation as well as fixed and high-duty-cycle operation.
Highly-reliable lightweight solid-state RF (radio frequency) transfer switch replaces less reliable mechanical switch in handling medium power for S-band power amplifier.
A new diode-pumped solid-state multipass amplifier produced 38-dB small-signal gain at 1.047 micron in Nd:YLF with 1.6-W pump power and 37 percent extraction efficiency near saturation. The amplifier had a 1:1 confocally reimaging multipass design that generated both high gain and high efficiency. The same amplifier design with 13 W of pump power was tested with Nd:YAG at 1.064 micron, which gave 38-dB small-signal gain and 3.2 W of output power, and with Nd:YVO4, also at 1.064 micron, which gave greater than 50-dB small-signal gain and 4.3 W of output power.
Fabricated as single-chip integrated circuit. Device based partly on concept proved in commercial solid-state lasers: using unstable-resonator oscillator to define electromagnetic mode and, following oscillator, traveling-wave amplifier to generate high power. Mode-definition and power-amplification functions optimized separately. Hyperbolic-grating, unstable-resonator oscillator/amplifier diode laser produces single-longitudinal-mode, broad, laterally coherent, diffraction-limited, high-power beam.
To record biopotentials with extreme dynamic ranges, biopotential inputs are capacitatively coupled to a miniature, low power, solid-state signal conditioner consisting of a two-stage differential preamplifier that has a low noise figure. The ouput of the preamplifier uses diodes to provide an overall gain which is nearly logarithmic.
The overall objective of this Phase 2 effort was to develop and deliver to NASA a high repetition rate laser-diode-pumped solid-state pulsed laser system with output in the green portion of the spectrum. The laser is for use in data communications, and high efficiency, short pulses, and low timing jitter are important features. A short-pulse 1 micron laser oscillator, a new multi-pass amplifier to boost the infrared power, and a frequency doubler to take the amplified infrared pulsed laser light into the green. This produced 1.5 W of light in the visible at a pulse repetition rate of 20 kHz in the laboratory. The pulses have a full-width at half maximum of near 1 ns. The results of this program are being commercialized.
Combination of temperature-compensated logarithmic amplifiers and p-i-n photodiodes operating in zero-bias mode provides lightweight radiometer for detecting spectral intensities encompassing more than three decades over a range of at least 300 to 800 nanometers at low power levels.
Test data were collected on 1035 plastic encapsulated devices and 75 hermetically scaled control group devices that were purchased from each of five different manufacturers in the categories of (1) low power Schottsky TTL (bipolar) digital circuits; (2) CMOS digital circuits; (3) operational amplifier linear circuits; and (4) NPN transistors. These parts were subjected to three different initial screening conditions, then to extended life testing, to determine any possible advantages or trends for any particular screen. Several tests were carried out in the areas of flammability testing, humidity testing, high pressure steam (auroclave) testing, and high temperature storage testing. Test results are presented. Procurement and application considerations for use of plastic encapsulated semiconductors are presented and a statistical analysis program written to study the log normal distributions resulting from life testing is concluded.
Two prototype solid-state phased array systems concepts for potential use in the Solar Power Satellite are described. In both concepts, the beam is centered on the rectenna by means of phase conjugation of a pilot signal emanating from the ground. Also discussed is on-going solid-state amplifier development.
The use of nonlinear crystals to extend the frequency range of solid-state laser sources is proposed. The harmonic generation of high-average-power laser sources and CW-laser-sources nonlinear crystals is considered. The development of Nd:YAG pumped parametric oscillators and optical parametric amplifiers using LiNbO3 or AgGaS2 is studied. The LiNbO3 oscillator has tunable output over the 1.4-4.0 micron range and is applicable for remote sensing measurements of molecules and of humidity and temperature; AgGaS2 oscillators provide the potential for 3-15 micron infrared generation. Advances in material synthesis techniques related to the design and synthesis of nonlinear media are discussed. Various procedures for the synthesis of nonlinear crystals are described.
The engineering development of a solid-state transmitter amplifier operating in the 20-GHz frequency range is described. This effort involved a multitude of disciplines including IMPATT device development, circulator design, multiple-diode circuit design, and amplifier integration and test. The objective was to develop a transmitter amplifier demonstrating the feasibility of providing an efficient, reliable, lightweight solid-state transmitter to be flown on a 30 to 20 GHz communication demonstration satellite. The work was done under contract from NASA/Lewis Research Center for a period of three years. The result was the development of a GaAs IMPACT diode amplifier capable of an 11-W CW output power and a 2-dB bandwidth of 300 MHz. GaAs IMPATT diodes incorporating diamond heatsink and double-Read doping profile capable of 5.3-W CW oscillator output power and 15.5% efficiency were developed. Up to 19% efficiency was also observed for an output power level of 4.4 W. High performance circulators with a 0.2 dB inserting loss and bandwidth of 5 GHz have also been developed. These represent a significant advance in both device and power combiner circuit technologies in K-band frequencies.
A solid-state source of long pulse length, sodium-resonance radiation was developed for the purpose of generating an artificial star in the earth's mesospheric sodium layer. This radiation is generated by sum-frequency mixing the output of a 1.064 micron Nd:YAG laser with the output of a 1.319-micron Nd:YAG laser. By operating these lasers at wavelengths very close to the peak of their tuning curves, it is possible to match the wavelength of the sum-frequency radiation to that of the sodium D2 adsorption wavelength. Two pulsed laser systems were constructed, one producing as much as 0.6 J of sodium resonance radiation at a 10-Hz repetition rate and another producing as much as 24 mJ at a 840-Hz repetition rate. In both laser systems, the 1.06-micron and 1.32-micron Nd:YAG lasers are configured as mode-locked master oscillators followed by power amplifiers. Other aspects of this project are presented.
The applications of Q-switched lasers are well known, for example, laser radar, laser remote sensing, satellite orbit determination, Moon orbit and 'moon quake' determination, satellite laser communication, and many nonlinear optics applications. Most of the applications require additional properties of the Q-switched lasers, such as single-axial and/or single-transverse mode, high repetition rate, stable pulse shape and pulse width, or ultra compact and rugged oscillators. Furthermore, space based and airborne lasers for lidar and laser communication applications require efficient, compact, lightweight, long-lived, and stable-pulsed laser sources. Diode-pumped solid-state lasers (DPSSL) have recently shown the potential for satisfying all of these requirements. We will report on the operating characteristics of a diode-pumped, monolithic, self-Q-switched Cr,Nd:YAG laser where the chromium ions act as a saturable absorber for the laser emission at 1064 nm. The pulse duration is 3.5 ns and the output is highly polarized with an extinction ratio of 700:1. It is further shown that the output is single-longitudinal-mode with transform-limited spectral line width without pulse-to-pulse mode competition. Consequently, the pulse-to-pulse intensity fluctuation is less than the instrument resolution of 0.25 percent. This self-stabilization mechanism is because the lasing mode bleaches the distributed absorber and establishes a gain-loss grating similar to that used in the distributed feedback semiconductor lasers. A repetition rate above 5 KHz has also been demonstrated. For higher power, this laser can be used for injection seeding an amplifier (or amplifier chain) or injection locking of a power oscillator pumped by diode lasers. We will discuss some research directions on the master oscillator for higher output energy per pulse as well as how to scale the output power of the diode-pumped amplifier(s) to multi-kilowatt average power.