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DOE OSTI2021

Temperature-dependent Spectral Emission of Hexagonal Boron Nitride Quantum Emitters on Conductive and Dielectric Substrates

We report a reduction in the linewidth and suppression of spectral diffusion of quantum emitters in hexagonal boron nitride supported on a conductive substrate. In this work, we observe a temperature-dependent reduction in the spectral emission linewidth for CVD-grown and exfoliated crystals on conductive ITO relative to those seen on silicon dioxide (SiO 2 ) substrates. We show that the inhomogeneous linewidth can be suppressed by 45% as a result of using a conductive substrate. We investigate the zero-phonon line profile at temperatures ranging from 4 to 300 K and decompose the effects of thermal broadening and spectral diffusion at each temperature by Voigt fitting. The temperature dependence of homogeneous and inhomogeneous components of the broadening is discussed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2024

The influence of laser energy on deuterium emission characteristics from a Zircaloy-4 plasma

Laser-produced plasma coupled with optical emission spectroscopy (OES) is a promising technique for detecting certain isotopes, with unique capabilities such as standoff and rapid detection and minimal to no sample preparation requirements. The key figure-of-merit for isotopic analysis using optical spectroscopy tools is the linewidth relative to the isotope shift. Although the isotopes of hydrogen (1H, 2H, and 3H) possess large isotopic shifts (1H–2H ≈ 180 pm, 1H–3H ≈ 240 pm), being a light element, the H transitions are susceptible to various broadening mechanisms in the plasma environment. One of the critical parameters that influence the linewidth of a transition in an LPP is the incident laser energy. In the present study, we evaluated the role of laser energy on plume expansion dynamics, deuterium emission intensity, and linewidth in a nanosecond laser-produced Zircaloy-4 plasma. The changes in 2Hα emission intensity and linewidth were investigated for varying laser fluence and time after plasma onset. Spatially resolved and spatially integrated OES were performed and compared to investigate the emission spectral features and linewidth of 2Hα. Monochromatic two-dimensional time-resolved imaging was also performed to understand the morphology of the deuterium and protium emission relative to all species in the plume. Our results showed that 1Hα and 2Hα emissions predominantly occur closer to the target. Measurements of 2Hα linewidth approached similar values at later times of plasma evolution regardless of the laser energy. The linewidths of the 2Hα transition showed insignificant differences between spatially resolved and spatially integrated measurements.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2025

Erbium quantum memory platform with long optical coherence via back-end-of-line deposition on foundry-fabricated photonics

Realizing scalable quantum interconnects necessitates the integration of solid-state quantum memories with foundry photonics processes. While prior photonic integration efforts have relied upon specialized, laboratory-scale fabrication techniques, this work demonstrates the monolithic integration of a quantum memory platform with low-loss foundry photonic circuits via back-end-of-line deposition. We deposited thin films of titanium dioxide (Ti⁢O 2 ) doped with erbium (Er) onto silicon nitride nanophotonic waveguides and studied Er optical coherence at subkelvin temperatures with photon echo techniques. Furthermore, we suppressed optical dephasing through ex-situ oxygen annealing and optimized measurement conditions, which yielded an optical coherence time of 64 μ⁢s (a 5-kHz homogeneous linewidth) and slow spectral diffusion of 27 kHz over 4 ms, results that are comparable to state-of-the-art Er nanophotonic devices. Combined with second-long electron spin lifetimes and demonstrated electrical control of Er emission, our findings establish Er:Ti⁢O 2 on foundry photonics as a manufacturable platform for ensemble and single-ion quantum memories.

Electro-optic effects↗

DOE OSTI2025

Microstructural and preliminary optical and microwave characterization of erbium-doped CaMoO 4 thin films

This work explores erbium-doped calcium molybdate (Er:CaMoO4) thin films grown on silicon and yttria stabilized zirconia (YSZ) substrates, as a potential solid state system for C-band (utilizing the ∼1.5 μm Er 3+ 4f–4f transition) quantum emitters for quantum network applications. Through molecular beam epitaxial growth experiments and electron microscopy, X-ray diffraction, and reflection electron diffraction studies, we identify an incorporation limited deposition regime that enables a 1:1 Ca:Mo ratio in the growing film leading to single phase CaMoO 4 formation that can be in situ doped with Er (typically 2–100 ppm). We further show that growth on silicon substrates is single phase but polycrystalline in morphology, while growth on YSZ substrates leads to high-quality epitaxial single crystalline CaMoO 4 films. We perform preliminary optical and microwave characterization on the suspected Y 1 –Z 1 transition of 2 ppm, 200 nm epitaxial Er:CaMoO 4 annealed thin films and extract an optical inhomogeneous linewidth of 9.1(1) GHz, an optical excited state lifetime of 6.7(2) ms, a spectral diffusion-limited homogeneous linewidth of 6.7(4) MHz, and an EPR linewidth of 1.10(2) GHz.

Masiulionis, Ignas [Univ. of Chicago, IL (United S↗

DOE OSTI2024

Optical and microstructural characterization of Er 3+ doped epitaxial cerium oxide on silicon

Rare-earth ion dopants in solid-state hosts are ideal candidates for quantum communication technologies, such as quantum memories, due to the intrinsic spin–photon interface of the rare-earth ion combined with the integration methods available in the solid state. Erbium-doped cerium oxide (Er:CeO 2 ) is a particularly promising host material platform for such a quantum memory, as it combines the telecom-wavelength (~ 1.5 μm) 4f–4f transition of erbium, a predicted long electron spin coherence time when embedded in CeO 2 , and a small lattice mismatch with silicon. In this work, we report on the epitaxial growth of Er:CeO 2 thin films on silicon using molecular beam epitaxy, with controlled erbium concentration between 2 and 130 parts per million (ppm). We carry out a detailed microstructural study to verify the CeO 2 host structure and characterize the spin and optical properties of the embedded Er 3+ ions as a function of doping density. In as-grown Er:CeO 2 in the 2–3 ppm regime, we identify an EPR linewidth of 245(1) MHz, an optical inhomogeneous linewidth of 9.5(2) GHz, an optical excited state lifetime of 3.5(1) ms, and a spectral diffusion-limited homogeneous linewidth as narrow as 4.8(3) MHz. We test the annealing of Er:CeO 2 films up to 900 °C, which yields narrowing of the inhomogeneous linewidth by 20% and extension of the excited state lifetime by 40%.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Spatiotemporal evolution of emission and absorption signatures in a laser-produced plasma

Here we report spatiotemporal evolution of emission and absorption signatures of Al species in a nanosecond (ns) laser-produced plasma (LPP). The plasmas were generated from an Inconel target, which contained ~0:4 wt. % Al, using 1064 nm, ≈6 ns full width half maximum pulses from an Nd:YAG laser at an Ar cover gas pressure of ≈34 Torr. The temporal distributions of the Al I (394.4 nm) transition were collected from various spatial points within the plasma employing time-of-flight (TOF) emission and laser absorption spectroscopy, and they provide kinetics of the excited state and ground state population of the selected transition. The emission and absorption signatures showed multiple peaks in their temporal profiles, although they appeared at different spatial locations and times after the plasma onset. The absorption temporal profiles showed an early time signature representing shock wave propagation into the ambient gas. We also used emission and absorption spectral features for measuring various physical properties of the plasma. The absorption spectral profiles are utilized for measuring linewidths, column density, and kinetic temperature, while emission spectra were used to measure excitation temperature. A comparison between excitation and kinetic temperature was made at various spatial points in the plasma. Our results highlight that the TOF measurements provide a resourceful tool for showing the spatiotemporal LPP dynamics with higher spatial and temporal resolution than is possible with spectral measurements but are difficult to interpret without additional information on excitation temperatures and linewidths. The combination of absorption and emission TOF and spectral measurements thus provides a more complete picture of LPP spatiotemporal dynamics than is possible using any one technique alone.

(140.3440) Laser-induced breakdown, (280.4788) Opt↗

DOE OSTI2023

Many-Exciton Quantum Dynamics in a Ruddlesden–Popper Tin Iodide

We present a study on the many-body exciton interactions in a Ruddlesden–Popper tin halide, namely, (PEA) 2 SnI 4 (PEA = phenylethylammonium), using coherent two-dimensional electronic spectroscopy. The optical dephasing times of the third-order polarization observed in these systems are determined by exciton many-body interactions and lattice fluctuations. We investigate the excitation-induced dephasing (EID) and observe a significant reduction of the dephasing time with increasing excitation density as compared to its lead counterpart (PEA) 2 PbI 4 , which we have previously reported in a separate publication [J. Chem. Phys. 2020, 153, 164706]. Surprisingly, we find that the EID interaction parameter is four orders of magnitude higher in (PEA) 2 SnI 4 than that in (PEA) 2 PbI 4 . This increase in the EID rate may be due to exciton localization arising from a more statically disordered lattice in the tin derivative. This is supported by the observation of multiple closely spaced exciton states and the broadening of the linewidth with increasing population time (spectral diffusion), which suggests a static disordered structure relative to the highly dynamic lead-halide. Additionally, we find that the exciton nonlinear coherent lineshape shows evidence of a biexcitonic state with low binding energy (<10 meV) not observed in the lead system. We model the lineshapes based on a stochastic scattering theory that accounts for the interaction with a nonstationary population of dark background excitations. Our study provides evidence of differences in the exciton quantum dynamics between tin- and lead-based Ruddlesden–Popper metal halides (RPMHs) and links them to the exciton–exciton interaction strength and the static disorder aspect of the crystalline structure.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2025

Omni‐Resonant Imaging Across the Visible

Resonant field enhancement in optical cavities is provided over only narrow linewidths and for specific spatial modes. Consequently, spectrally restrictive planar Fabry-Pérot cavities have not contributed to date to white-light imaging, which necessitates a highly multimoded broadband field to satisfy the resonance condition. It is shown that introducing judicious angular-dispersion circumvents the fundamental trade-off between cavity linewidth and finesse in a Fabry-Pérot cavity by exciting a 130-nm-bandwidth achromatic resonance across the visible spectrum, which far exceeds the finesse-limited linewidth (0.5 nm), and even exceeds the free spectral range (45 nm). This omni-resonant configuration enables broadband color-imaging over a 100-nm-bandwidth in the visible with minimal spherical and chromatic aberrations. Omni-resonant imaging is demonstrated using coherent and incoherent light, and spatially extended and localized fields comprising stationary and moving objects. This work paves the way to harnessing broadband resonant enhancements for spatially structured fields, as needed for example in solar windows.

42 ENGINEERING↗

DOE OSTI2023

Indistinguishable telecom band photons from a single Er ion in the solid state

Atomic defects in the solid state are a key component of quantum repeater networks for long-distance quantum communication1. Recently, there has been significant interest in rare earth ions, in particular Er 3+ for its telecom band optical transition that allows long-distance transmission in optical fibres. However, the development of repeater nodes based on rare earth ions has been hampered by optical spectral diffusion, precluding indistinguishable single-photon generation. Here, we implant Er 3+ into CaWO 4 , a material that combines a non-polar site symmetry, low decoherence from nuclear spins and is free of background rare earth ions, to realize significantly reduced optical spectral diffusion. For shallow implanted ions coupled to nanophotonic cavities with large Purcell factor, we observe single-scan optical linewidths of 150 kHz and long-term spectral diffusion of 63 kHz, both close to the Purcell-enhanced radiative linewidth of 21 kHz. This enables the observation of Hong–Ou–Mandel interference between successively emitted photons with a visibility of V = 80(4)%, measured after a 36 km delay line. We also observe spin relaxation times T 1,s = 3.7 s and T 2,s > 200 μs, with the latter limited by paramagnetic impurities in the crystal instead of nuclear spins. Furthermore, this represents a notable step towards the construction of telecom band quantum repeater networks with single Er 3+ ions.

42 ENGINEERING↗

DOE OSTI2021

Time-resolved absorption spectroscopic characterization of ultrafast laser-produced plasmas under varying background pressures

Time-resolved tunable laser absorption spectroscopy is used to characterize the physical properties of ultrafast laser-produced plasmas. The plasmas were produced from an Inconel target, with = 0.4 wt. % Al, using ~ 35 fs, ~800 nm laser pulses at varying Ar background pressures from 1-100 Torr. The absorption spectrum of atomic Al is measured with high spectral and temporal resolution when the probe laser is stepped across the selected Al transition at 394.4 nm. Spectral fitting is used to infer linewidths, kinetic temperature, Al column density, and pressure broadening coefficient. The late time physical properties of plasmas are compared for various pressure levels. Our studies highlight that a significant lower state population exists even at early times of ultrafast laser-produced plasma evolution and lower state population persistence decreases with increasing ambient pressure. We also show that the fundamental optical properties, such as pressure-broadening, can be measured using ultrafast laser-produced plasmas combined with laser absorption spectroscopy.

laser absorption spectroscopy, laser produced plas↗

DOE OSTI2022

Origin of the injection-dependent emission blueshift and linewidth broadening of III-nitride light-emitting diodes

III-nitride light-emitting diodes (LEDs) exhibit an injection-dependent emission blueshift and linewidth broadening that is severely detrimental to their color purity. By using first-principles multi-scale modeling that accurately captures the competition between polarization-charge screening, phase-space filling, and many-body plasma renormalization, we explain the current-dependent spectral characteristics of polar III-nitride LEDs fabricated with state-of-the-art quantum wells. Our analysis uncovers a fundamental connection between carrier dynamics and the injection-dependent spectral characteristics of light-emitting materials. For example, polar III-nitride LEDs offer poor control over their injection-dependent color purity due to their poor hole transport and slow carrier-recombination dynamics, which forces them to operate at or near degenerate carrier densities. Designs that accelerate carrier recombination and transport and reduce the carrier density required to operate LEDs at a given current density lessen their injection-dependent wavelength shift and linewidth broadening.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2025

Laser-Induced Spectral Diffusion of T Centers in Silicon Nanophotonic Devices

Color centers in silicon are emerging as spin-photon interfaces operating at telecommunication wavelengths. The nanophotonic device integration of silicon color centers via ion implantation leads to significant optical-linewidth broadening, which makes indistinguishable photon generation challenging. Here, we study the optical spectral diffusion of T centers in a silicon photonic crystal cavity. We investigate the linewidth-broadening timescales and origins by measuring the temporal correlations of the resonance frequency under different conditions. Spectral hole-burning measurements reveal no spectral broadening at short timescales from 102 ns to 725 ns. We probe broadening at longer timescales using a check pulse to herald the T-center frequency and a probe pulse to measure the frequency after a wait time. The optical resonance frequency is stable up to 3 ms in the dark. Laser pulses below the silicon band gap applied during the wait time lead to linewidth broadening. Our observations establish laser-induced processes as the dominant spectral-diffusion mechanism for T centers in devices and inform materials and feedback strategies for indistinguishable photon generation.

Zhang, Xueyue↗

DOE OSTI2024

Heralded Generation of Correlated Photon Pairs from CdS/CdSe/CdS Quantum Shells

Quantum information processing demands efficient quantum light sources (QLS) capable of producing high-fidelity single photons or entangled photon pairs. Single epitaxial quantum dots (QDs) have long been proven to be efficient sources of deterministic single photons; however, their production via molecular-beam epitaxy presents scalability challenges. Conversely, colloidal semiconductor QDs offer scalable solution processing and tunable photoluminescence, but suffer from broader linewidths and unstable emissions. This leads to spectrally inseparable emission from exciton (X) and biexciton (XX) states, complicating the production of single photons and triggered photon pairs. Here, in this work, we demonstrate that colloidal semiconductor quantum shells (QSs) achieve significant spectral separation (∼75–80 meV) and long temporal stability of X and XX emissive states, enabling the observation of exciton-biexciton bunching in colloidal QDs. Our low-temperature single-particle measurements show cascaded XX-X emission of single photon pairs for over 200 s, with minimal overlap between X and XX features. The X-XX distinguishability allows for an in-depth theoretical characterization of cross-correlation strength, placing it in perspective with photon pairs of epitaxial counterparts. These findings highlight a strong potential of semiconductor quantum shells for applications in quantum information processing.

biexciton↗

DOE OSTI2024

Sub‐Diffraction Correlation of Quantum Emitters and Local Strain Fields in Strain‐Engineered WSe 2 Monolayers

Strain-engineering in atomically thin metal dichalcogenides is a useful method for realizing single-photon emitters (SPEs) for quantum technologies. Correlating SPE position with local strain topography is challenging due to localization inaccuracies from the diffraction limit. Currently, SPEs are assumed to be positioned at the highest strained location and are typically identified by randomly screening narrow-linewidth emitters, of which only a few are spectrally pure. In this work, hyperspectral quantum emitter localization microscopy is used to locate 33 SPEs in nanoparticle-strained WSe 2 monolayers with sub-diffraction-limit resolution (≈30 nm) and correlate their positions with the underlying strain field via image registration. In this system, spectrally pure emitters are not concentrated at the highest strain location due to spectral contamination; instead, isolable SPEs are distributed away from points of peak strain with an average displacement of 240 nm. These observations point toward a need for a change in the design rules for strain-engineered SPEs and constitute a key step toward realizing next-generation quantum optical architectures.

2D material↗

DOE OSTI2020

A path to scaling helium-3 spin-exchange optical pumping

Polarized 3 He has contributed to breakthroughs in particle physics, neutron scattering, and lung imaging, mostly by optical pumping of liter quantities in valved cells or in sealed cells pumped in situ. Only metastability exchange optical pumping currently meets the demand for delivering large quantities of highly polarized 3 He to external volumes. Our development program is under way to achieve medium to large-scale spin-exchange optical pumping of 3 He. Thin-walled aluminosilicate cells placed in contact with thermal reservoirs inside a pressure vessel were optically pumped with kilowatt-scale lasers spectrally narrowed to match pressure-broadened absorption linewidths. We report here the key elements of this program and significant milestones: multi-liter volume valved cells that provide long longitudinal lifetimes that reached polarization as high as 85% inside a thermally stable and pressurized environment.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

DOE OSTI2026

High finesse buckled microcavities

Optical cavities are widely used in modern science and technology to enable a wide range of both quantum and classical applications. Recently, the growing demand for miniaturization and high performance has fueled the exploration of new fabrication methods beyond traditional polishing techniques and macroscopic mirrors. Visible and near-infrared (NIR) wavelengths are particularly important for quantum applications, where achieving low-loss resonators is also more challenging than in the telecom range, presenting unique challenges and opportunities for microscopic cavity systems. Here, we present a fabrication method for making NIR microcavities using buckled dielectric membrane mirrors, achieving a record finesse of 0.9 million at 780 nm for microcavities. We demonstrated flexible device geometries—including singular mirrors and mirror arrays, featuring radii of curvature ranging from 1 to 10 mm. The fabrication process offers high uniformity, high yield, and robust performance across a wide range of cavity lengths. Additionally, we can produce easy-to-assemble microcavity packages, with a total volume of ~2(4) mm 3 , featuring optical modes with a linewidth of 5.16 MHz (570 kHz) and a free spectral range (FSR) of 3.18 THz (150 GHz). Our results extend the frontier of microcavity fabrication for classical and quantum photonic technologies.

Ding, Sophie Weiyi [Harvard Univ., Cambridge, MA (↗

DOE OSTI2023

Linewidth narrowing in self-injection-locked on-chip lasers

Abstract Stable laser emission with narrow linewidth is of critical importance in many applications, including coherent communications, LIDAR, and remote sensing. In this work, the physics underlying spectral narrowing of self-injection-locked on-chip lasers to Hz-level lasing linewidth is investigated using a composite-cavity structure. Heterogeneously integrated III–V/SiN lasers operating with quantum-dot and quantum-well active regions are analyzed with a focus on the effects of carrier quantum confinement. The intrinsic differences are associated with gain saturation and carrier-induced refractive index, which are directly connected with 0- and 2-dimensional carrier densities of states. Results from parametric studies are presented for tradeoffs involved with tailoring the linewidth, output power, and injection current for different device configurations. Though both quantum-well and quantum-dot devices show similar linewidth-narrowing capabilities, the former emits at a higher optical power in the self-injection-locked state, while the latter is more energy-efficient. Lastly, a multi-objective optimization analysis is provided to optimize the operation and design parameters. For the quantum-well laser, minimizing the number of quantum-well layers is found to decrease the threshold current without significantly reducing the output power. For the quantum-dot laser, increasing the quantum-dot layers or density in each layer increases the output power without significantly increasing the threshold current. These findings serve to guide more detailed parametric studies to produce timely results for engineering design.

47 OTHER INSTRUMENTATION↗

DOE OSTI2023

Photophysics of Intrinsic Single‐Photon Emitters in Silicon Nitride at Low Temperatures

A robust process for fabricating intrinsic single-photon emitters in silicon nitride is recently established. These emitters show promise for quantum applications due to room-temperature operation and monolithic integration with technologically mature silicon nitride photonics platforms. Here, the fundamental photophysical properties of these emitters are probed through measurements of optical transition wavelengths, linewidths, and photon antibunching as a function of temperature from 4.2 to 300 K. Important insight into the potential for lifetime-limited linewidths is provided through measurements of inhomogeneous and temperature-dependent broadening of the zero-phonon lines. At 4.2 K, spectral diffusion is found to be the main broadening mechanism, while spectroscopy time series reveal zero-phonon lines with instrument-limited linewidths.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗