Results for “TANTALUM” — Page 2

NASA NTRS2010

Effect of Post-HALT Annealing on Leakage Currents in Solid Tantalum Capacitors

Degradation of leakage currents is often observed during life testing of tantalum capacitors and is sometimes attributed to the field-induced crystallization in amorphous anodic tantalum pentoxide dielectrics. However, degradation of leakage currents and the possibility of annealing of degraded capacitors have not been investigated yet. In this work the effect of annealing after highly accelerated life testing (HALT) on leakage currents in various types of solid tantalum capacitors was analyzed. Variations of leakage currents with time during annealing at temperatures from 125 oC to 180 oC, thermally stimulated depolarization (TSD) currents, and I-V characteristics were measured to understand the conduction mechanism and the reason for current degradation. Annealing resulted in a gradual decrease of leakage currents and restored their initial values. Repeat HALT after annealing resulted in reproducible degradation of leakage currents. The observed results are explained based on ionic charge instability (drift/diffusion of oxygen vacancies) in the tantalum pentoxide dielectrics using a modified Schottky conduction mechanism.

Teverovsky, Alexander↗

NASA NTRS2012

Effect of Compressive Stresses on Leakage Currents in Microchip Tantalum Capacitors

Microchip tantalum capacitors are manufactured using new technologies that allow for production of small size capacitors (down to EIA case size 0402) with volumetric efficiency much greater than for regular chip capacitors. Due to a small size of the parts and leadless design they might be more sensitive to mechanical stresses that develop after soldering onto printed wiring boards (PWB) compared to standard chip capacitors. In this work, the effect of compressive stresses on leakage currents in capacitors has been investigated in the range of stresses up to 200 MPa. Significant, up to three orders of magnitude, variations of currents were observed after the stress exceeds a certain critical level that varied from 10 MPa to 180 MPa for capacitors used in this study. A stress-induced generation of electron traps in tantalum pentoxide dielectric is suggested to explain reversible variations of leakage currents in tantalum capacitors. Thermo-mechanical characteristics of microchip capacitors have been studied to estimate the level of stresses caused by assembly onto PWB and assess the risk of stress-related degradation and failures. Keywords: tantalum capacitors, leakage current, soldering, reliability, mechanical stress.

Teverovsky, Alexander↗

NASA NTRS2017

Kinetics of Moisture Sorption and Reverse Bias Degradation in Chip Tantalum Capacitors

Exposure of chip MnO2 tantalum capacitors to humid environments might result in increased ESR, leakage currents, and first turn-on failures. However, there is a lack of literature data on the effect of moisture on reverse bias behavior of the parts. The presence of moisture can also result in pop-corning when a high water vapor pressure develops when moisture absorbed in pores of tantalum slugs vaporizes instantly during soldering process resulting in damage to capacitors. A study of kinetics of moisture ingress to and release from active elements of capacitors would allow a better understanding of degradation mechanisms and is important for preventing failures. In this work, a technique for investigation of moisture sorption and desorption in solid chip tantalum capacitors that employs tantalum slugs as a humidity sensor have been developed and kinetics of the process analyzed for different types of capacitors at temperatures from room to 125 ºC. A model that relates diffusion characteristics of polymer cases and size of the slugs to characteristic times of moisture sorption has been developed. A strong effect of moisture on long-term degradation of reverse bias currents in MnO2 cathode capacitors has been demonstrated and physical mechanisms discussed.

Teverovsky, Alexander↗

NASA NTRS2017

Kinetics of Moisture Sorption and Reverse Bias Degradation in Chip Tantalum Capacitors

Exposure of chip MnO2 tantalum capacitors to humid environments might result in increased ESR, leakage currents, and first turn-on failures. However, there is a lack of literature data on the effect of moisture on reverse bias behavior of the parts. The presence of moisture can also result in pop-corning when a high water vapor pressure develops when moisture absorbed in pores of tantalum slugs vaporizes instantly during soldering process resulting in damage to capacitors. A study of kinetics of moisture ingress to and release from active elements of capacitors would allow a better understanding of degradation mechanisms and is important for preventing failures. In this work, a technique for investigation of moisture sorption and desorption in solid chip tantalum capacitors that employs tantalum slugs as a humidity sensor have been developed and kinetics of the process analyzed for different types of capacitors at temperatures from room to 125 C. A model that relates diffusion characteristics of polymer cases and size of the slugs to characteristic times of moisture sorption has been developed. A strong effect of moisture on long-term degradation of reverse bias currents in MnO2 cathode capacitors has been demonstrated and physical mechanisms discussed.

Teverovsky, Alexander↗

NASA NTRS2021

Acceleration Factors for Reliability Assessment of Polymer Tantalum Capacitors

Using polymer tantalum capacitors in Hi-Rel systems requires an assessment of the reliability characteristics of the parts. For this assessment, tantalum capacitors are typically subjected to reliability testing at temperatures and voltages exceeding their specified values, and the failure rate (FR) — or the probability of failure during use conditions — is calculated based on voltage and temperature acceleration factors. In this work, various types and lots of polymer tantalum capacitors have been tested at highly accelerated life test (HALT) conditions and the acceleration factors have been determined using different techniques. It has been shown that the behavior of capacitors under HALT conditions can be described based on the time-dependent dielectric breakdown (TDDB) model, which explains the presence of infant mortality (IM) and wear-out failures using the same failure mechanisms and allows for an assessment of the acceleration factors. The difference in acceleration factors obtained using exponential and power models is discussed. Analysis shows that with proper derating, screening, and qualification testing, the reliability of frameless Hi-Rel COTS polymer tantalum capacitors is adequate for space missions.

Alex Eidelman↗

NASA NTRS2021

Acceleration Factors for Reliability Assessment of Polymer Tantalum Capacitors

Using polymer tantalum capacitors in Hi-Rel systems requires an assessment of the reliability characteristics of the parts. For this assessment, tantalum capacitors are typically subjected to reliability testing at temperatures and voltages exceeding their specified values, and the failure rate (FR) — or the probability of failure during use conditions — is calculated based on voltage and temperature acceleration factors. In this work, various types and lots of polymer tantalum capacitors have been tested at highly accelerated life test (HALT) conditions and the acceleration factors have been determined using different techniques. It has been shown that the behavior of capacitors under HALT conditions can be described based on the time-dependent dielectric breakdown (TDDB) model, which explains the presence of infant mortality (IM) and wear-out failures using the same failure mechanisms and allows for an assessment of the acceleration factors. The difference in acceleration factors obtained using exponential and power models is discussed. Analysis shows that with proper derating, screening, and qualification testing, the reliability of frameless Hi-Rel COTS polymer tantalum capacitors is adequate for space missions.

Alex Eidelman↗

NASA NTRS2018

Anomalous Transients in Chip Polymer Tantalum Capacitors

Contrary to MnO2 tantalum capacitors, transient processes in polymer tantalum capacitors after voltage application might result in anomalously high, ampere-level currents when a capacitor might appear as a short circuit for a time that is much greater than a transient time in MnO2 capacitors. In this work, conditions that cause anomalous transients in different types of polymer tantalum capacitors have been analyzed. Related phenomena that included increasing of capacitance and dissipation factors with voltage, parametric surge current test failures without damage to capacitors, and increasing leakage currents at low temperatures are described. It has been shown that anomalous transients increased substantially with applied voltage and with reduction of moisture content in capacitors caused by storage or operation at high temperatures and/or in vacuum. Different types of capacitors exhibited different level of transients and modification of conductive polymers or process of their application might decrease transient leakage currents substantially. For space applications, the risk of failures related to anomalous transients can be mitigated by special testing procedures to select parts with an acceptable level of transients and by voltage derating.

Tantalum Capacitors↗

NASA NTRS2014

Evaluation of Ferrite Chip Beads as Surge Current Limiters in Circuits with Tantalum Capacitors

Limiting resistors are currently required to be connected in series with tantalum capacitors to reduce the risk of surge current failures. However, application of limiting resistors decreases substantially the efficiency of the power supply systems. An ideal surge current limiting device should have a negligible resistance for DC currents and high resistance at frequencies corresponding to transients in tantalum capacitors. This work evaluates the possibility of using chip ferrite beads (FB) as such devices. Twelve types of small size FBs from three manufacturers were used to evaluate their robustness under soldering stresses and at high surge current spikes associated with transients in tantalum capacitors. Results show that FBs are capable to withstand current pulses that are substantially greater than the specified current limits. However, due to a sharp decrease of impedance with current, FBs do not reduce surge currents to the required level that can be achieved with regular resistors.

surge current testing↗

NASA NTRS2015

Random Vibration Testing of Advanced Wet Tantalum Capacitors

Advanced wet tantalum capacitors allow for improved performance of power supply systems along with substantial reduction of size and weight of the systems that is especially beneficial for space electronics. Due to launch-related stresses, acceptance testing of all space systems includes random vibration test (RVT). However, many types of advanced wet tantalum capacitors cannot pass consistently RVT at conditions specified in MIL-PRF-39006, which impedes their use in space projects. This requires a closer look at the existing requirements, modes and mechanisms of failures, specifics of test conditions, and acceptance criteria. In this work, different lots of advanced wet tantalum capacitors from four manufacturers have been tested at step stress random vibration conditions while their currents were monitored before, during, and after the testing. It has been shown that the robustness of the parts and their reliability are mostly due to effective self-healing processes and limited current spiking or minor scintillations caused by RVT do not increase the risk of failures during operation. A simple model for scintillations events has been used to simulate current spiking during RVT and optimize test conditions. The significance of scintillations and possible effects of gas generation have been discussed and test acceptance criteria for limited current spiking have been suggested.

cracking↗

NASA NTRS2015

Random Vibration Testing of Advanced Wet Tantalum Capacitors

Advanced wet tantalum capacitors allow for improved performance of power supply systems along with substantial reduction of size and weight of the systems that is especially beneficial for space electronics. Due to launch-related stresses, acceptance testing of all space systems includes random vibration test (RVT). However, many types of advanced wet tantalum capacitors cannot pass consistently RVT at conditions specified in MIL-PRF-39006, which impedes their use in space projects. This requires a closer look at the existing requirements, modes and mechanisms of failures, specifics of test conditions, and acceptance criteria. In this work, different lots of advanced wet tantalum capacitors from four manufacturers have been tested at step stress random vibration conditions while their currents were monitored before, during, and after the testing. It has been shown that the robustness of the parts and their reliability are mostly due to effective self-healing processes and limited current spiking or minor scintillations caused by RVT do not increase the risk of failures during operation. A simple model for scintillations events has been used to simulate current spiking during RVT and optimize test conditions. The significance of scintillations and possible effects of gas generation have been discussed and test acceptance criteria for limited current spiking have been suggested.

cracking↗

NASA NTRS2015

Random Vibration Testing of Advanced Wet Tantalum Capacitors

Advanced wet tantalum capacitors allow for improved performance of power supply systems along with substantial reduction of size and weight of the systems that is especially beneficial for space electronics. Due to launch-related stresses, acceptance testing of all space systems includes random vibration test (RVT). However, many types of advanced wet tantalum capacitors cannot pass consistently RVT at conditions specified in MIL-PRF-39006, which impedes their use in space projects. This requires a closer look at the existing requirements, modes and mechanisms of failures, specifics of test conditions, and acceptance criteria. In this work, different lots of advanced wet tantalum capacitors from four manufacturers have been tested at step stress random vibration conditions while their currents were monitored before, during, and after the testing. It has been shown that the robustness of the parts and their reliability are mostly due to effective self-healing processes and limited current spiking or minor scintillations caused by RVT do not increase the risk of failures during operation. A simple model for scintillations events has been used to simulate current spiking during RVT and optimize test conditions. The significance of scintillations and possible effects of gas generation have been discussed and test acceptance criteria for limited current spiking have been suggested.

wet tantalum capacitors↗

NASA NTRS2015

Leakage Currents and Gas Generation in Advanced Wet Tantalum Capacitors

Currently, military grade, established reliability wet tantalum capacitors are among the most reliable parts used for space applications. This has been achieved over the years by extensive testing and improvements in design and materials. However, a rapid insertion of new types of advanced, high volumetric efficiency capacitors in space systems without proper testing and analysis of degradation mechanisms might increase risks of failures. The specifics of leakage currents in wet electrolytic capacitors is that the conduction process is associated with electrolysis of electrolyte and gas generation resulting in building up of internal gas pressure in the parts. The risk associated with excessive leakage currents and increased pressure is greater for high value advanced wet tantalum capacitors, but it has not been properly evaluated yet. In this work, in Part I, leakages currents in various types of tantalum capacitors have been analyzed in a wide range of voltages, temperatures, and time under bias. Gas generation and the level of internal pressure have been calculated in Part II for different case sizes and different hermeticity leak rates to assess maximal allowable leakage currents. Effects related to electrolyte penetration to the glass seal area have been studied and the possibility of failures analyzed in Part III. Recommendations for screening and qualification to reduce risks of failures have been suggested.

degradation mechanisms↗

NASA NTRS2016

Advanced Wet Tantalum Capacitors: Design, Specifications and Performance

Insertion of new types of commercial, high volumetric efficiency wet tantalum capacitors in space systems requires reassessment of the existing quality assurance approaches that have been developed for capacitors manufactured to MIL-PRF-39006 requirements. The specifics of wet electrolytic capacitors is that leakage currents flowing through electrolyte can cause gas generation resulting in building up of internal gas pressure and rupture of the case. The risk associated with excessive leakage currents and increased pressure is greater for high value advanced wet tantalum capacitors, but it has not been properly evaluated yet. This presentation gives a review of specifics of the design, performance, and potential reliability risks associated with advanced wet tantalum capacitors. Problems related to setting adequate requirements for DPA, leakage currents, hermeticity, stability at low and high temperatures, ripple currents for parts operating in vacuum, and random vibration testing are discussed. Recommendations for screening and qualification to reduce risks of failures have been suggested.

wet tantalum capacitors (WTC)↗

NASA NTRS2017

Advanced Wet Tantalum Capacitors: Design, Specifications and Performance

Insertion of new types of commercial, high volumetric efficiency wet tantalum capacitors in space systems requires reassessment of the existing quality assurance approaches that have been developed for capacitors manufactured to MIL-PRF-39006 requirements. The specifics of wet electrolytic capacitors is that leakage currents flowing through electrolyte can cause gas generation resulting in building up of internal gas pressure and rupture of the case. The risk associated with excessive leakage currents and increased pressure is greater for high value advanced wet tantalum capacitors, but it has not been properly evaluated yet. This presentation gives a review of specifics of the design, performance, and potential reliability risks associated with advanced wet tantalum capacitors. Problems related to setting adequate requirements for DPA, leakage currents, hermeticity, stability at low and high temperatures, ripple currents for parts operating in vacuum, and random vibration testing are discussed. Recommendations for screening and qualification to reduce risks of failures have been suggested.

hermeticity↗

NASA NTRS2017

2017 NEPP Tasks Update for Ceramic and Tantalum Capacitors

This presentation gives an overview of current NEPP tasks on ceramic and tantalum capacitors and plans for the future. It includes tasks on leakage currents, gas generation and case deformation in wet tantalum capacitors; ESR degradation and acceleration factors in MnO2 and polymer cathode capacitors. Preliminary results on the effect of moisture on degradation of reverse currents in MnO2 tantalum capacitors are discussed. Latest results on mechanical characteristics of MLCCs and modeling of degradation of leakage currents in BME capacitors with defects are also presented.

ceramic capacitors↗

NASA NTRS2021

Breakdown in Tantalum Capacitors

Failures in tantalum capacitors can be considered as a time-dependent-breakdown and reliability of all types of capacitors, including wet, MnO2 and polymer cathode parts, depends on the efficiency of self-healing that can mend parts after breakdown. A mechanism of self-healing in MnO2 capacitors is associated with oxygen reduction in the cathode layer and isolation of the breakdown site with high-resistive Mn2O3/Mn3O4 compositions. Although this mechanism is commonly accepted, details of self-healing have not been analyzed sufficiently yet, and the effects of scintillations on behavior of the parts has not been fully understood. There is a lack of data on the self-healing efficiency in different lots of capacitors. Even less is known about self-healing in polymer tantalum capacitors. In this work, different types of polymer and MnO2 capacitors have been tested for scintillation breakdown using a constant current stress (CCS) technique modified to allow detection of the amplitudes and durations of current spikes during breakdown. Characteristics of the parts and in particular leakage currents were measured to assess the efficiency of self-healing and improve screening processes for tantalum capacitors. Damaged sites were localized using infrared camera and their appearance analyzed after deprocessing and crosssectioning. Thermal effects during scintillations have been modeled, self-healing processes in polymer and MnO2 cathode capacitors discussed, and mechanisms of breakdown based on the growth of conductive filaments in the dielectric suggested.

tantalum polymer capacitors↗

NASA NTRS2022

Useful Life of Tantalum Capacitors

Currently, the major reliability characteristic of tantalum capacitors is the failure rate, which is a constant used to characterize random failures of electronic components. However, contemporary MnO2 and polymer tantalum capacitors have both infant mortality (IM) and wear-out (WO) failures. This requires assessments of the useful life of the parts that is limited by the time of inception of WO failures that can be determined using an adequate reliability model and results of highly accelerated life testing (HALT). In this presentation, a modified time dependent dielectric breakdown (TDDB) model is used to describe both IM and WO failures during HALT. Specifics of physical processes resulting in degradation and failures in polymer and MnO2 tantalum capacitors are discussed, and the increase of IM failures with the level of stress is explained. The model justifies exponential dependence of the acceleration factors on voltage and predicts higher values of the voltage acceleration constant for IM compared to WO failures.

tantalum capacitors↗

NASA NTRS1972

Tungsten-reinforced tantalum

Method is described for producing tungsten-reinforced tantalum, a material possessing the high temperature strength of tungsten and room temperature ductility and weldability of tantalum. This material is produced by bonding together and overlaying structure of tungsten wires with chemical vapor deposited tantalum.

Bacigalupi, R. J.↗