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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Oxygen isotope evidence for input of magmatic fluids and precipitation of Au-Ag-tellurides in an otherwise ordinary adularia-sericite epithermal system in NE China

Abstract Tellurium-rich (Te) adularia-sericite epithermal Au-Ag deposits are an important current and future source of precious and critical metals. However, the source and evolution of ore-forming fluids in these deposits are masked by traditional bulk analysis of quartz oxygen isotope ratios that homogenize fine-scale textures and growth zones. To advance understanding of the source of Te and precious metals, herein, we use petrographic and cathodoluminescence (CL) images of such textures and growth zones to guide high spatial resolution secondary ion mass spectroscopy (SIMS) oxygen isotope analyses (10 µm spot) and spatially correlated fluid inclusion microthermometric measurements on successive quartz bands in contemporary Te-rich and Te-poor adularia-sericite (-quartz) epithermal Au-Ag vein deposits in northeastern China. The results show that large positive oxygen isotope shifts from –7.1 to +7.7‰ in quartz rims are followed by precipitation of Au-Ag telluride minerals in the Te-rich deposit, whereas small oxygen isotope shifts of only 4‰ (–2.2 to +1.6‰) were detected in quartz associated with Au-Ag minerals in the Te-poor deposits. Moreover, fluid-inclusion homogenization temperatures are higher in comb quartz rims (avg. 266.4 to 277.5 °C) followed by Au-Ag telluride minerals than in previous stages (~250 °C) in the Te-rich deposit. The Te-poor deposit has a consistent temperature (~245 °C) in quartz that pre- and postdates Au-Ag minerals. Together, the coupled increase in oxygen isotope ratios and homogenization temperatures followed by precipitation of Au-Ag tellurides strongly supports that inputs of magmatic fluid containing Au, Ag, and Te into barren meteoric water-dominated flow systems are critical to the formation of Te-rich adularia-sericite epithermal Au-Ag deposits. In contrast, Te-poor adularia-sericite epithermal Au-Ag deposits show little or no oxygen isotope or fluid-inclusion evidence for inputs of magmatic fluid.

Geochemistry & Geophysics↗
NASA NTRS1992

Floating zone melting of cadmium telluride

To produce superior crystals of cadmium telluride, floating zone melting in space has been proposed. Techniques required for floating zone melting of cadmium telluride are being developed. We have successfully float-zoned cadmium telluride on earth using square rods. A resistance heater was constructed for forming the molten zone. Evaporation of the molten zone was controlled by adding excess cadmium to the growth ampoule combined with heating of the entire ampoule. An effective method to hold the feed rod was developed. Slow rotation of the growth ampoule was proven experimentally to be necessary to achieve a complete symmetric molten zone. Most of the resultant cylindrical rods were single crystals with twins. Still needed is a suitable automatic method to control the zone length. We tried a fiber optical technique to control the zone length, but experiments showed that application of this technique to automate zone length control is unlikely to be successful.

Chang, Wen-Ming↗
DOE OSTI2021

Cadmium Magnesium Telluride for Next Generation X-Ray Free Electron Laser, Synchrotron and Many Other Applications

We developed a picosecond photodetector based on our Bridgman grown and specially engineered Cadmium Magnesium Telluride (Cd 1-x Mg x Te) single crystal that is sensitive to both optical and x-ray pulses for coarse timing in Free Electron Laser applications. Cd 1-x Mg x Te is a wide bandgap semiconductor material with potential applications, not only in optoelectronics, but also in particle physics as an intense pulse radiation detector for bremsstrahlung, X-ray/gamma ray radiation, thermal neutrons, and medical imaging. However, for femtosecond optical and x-ray cross correlation, the material has to have very short lifetime, a condition that is opposite to that required for nuclear spectroscopy applications. At the same time, the material also needs to have very low bulk leakage current, in the 0.10 pA range. Hence the ability to tailor or engineer the material is very crucial. In this paper, picosecond response and the crystal growth of this specially engineered cadmium magnesium telluride material will be presented. Other material characterization and transient measurements will also be discussed along with room temperature semiconductor detector performance for other nuclear radiation detection applications.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Effects of excess Te on flux inclusion formation in the growth of cadmium zinc telluride when forced melt convection is applied

The presence of second phase defects, particularly flux inclusions of tellurium rich composition, are of great concern for charge collection efficiency in cadmium zinc telluride (CZT) and cadmium telluride (CT) material intended for applications such as radiation detection. These inclusions can distort applied electric field lines within the detector as well as act as trapping centers for charge carriers. Reduction and/or elimination of these inclusions is required to achieve appropriate charge collection efficiencies, especially in detectors of thicknesses greater than 5 mm. These so-called flux inclusions are understood to form as a consequence of constitutional undercooling at the crystal growth interface. In this study, a forced melt convection technique was applied in Vertical Bridgman (VB) melt growth of CZT without reducing imposed growth rates of ~2 mm/hr. Several rotation profiles were tested while adjusting the melt composition from 51.62 to 61.75 atomic percent (at%) Te where the Te concentration was initially increased to improve overall material purity. With forced melt convection, the best inclusion distributions were achieved with highly Te rich melt compositions, far beyond the stoichiometric composition range for the CZT system. Average inclusion diameters were reduced to 2 µm while inclusions greater than 5 µm were essentially eliminated. Composition analyses of these ingots revealed near equilibrium concentrations of Te, even with ingots grown from Te concentrations as high as 61.75 at% Te. In this paper, a recipe for the reduction of inclusions in CZT melt growth is put forward and the implications of this method on our understanding of inclusion formation are discussed.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

A Ba 6 Cu 31 Te 22 ( A = K, Rb, Cs) Featuring Polyanionic Copper–Telluride Frameworks with Ultralow Thermal Conductivity

In this study, hree polyanionic tellurides, ABa 6 Cu 31 Te 22 (A = K, Rb, Cs), were synthesized in salt flux. The isostructural tellurides crystallize in a new structure type, in the cubic Pa$\overline{3}$ space group with a Wyckoff sequence of d 10 c 2 b 1 and large unit cell volumes of over 5500 Å 3 . The structures feature a framework of [CuTe 4 ] tetrahedra and [CuTe 3 ] trigonal pyramids with disorder in the Cu sites. The polyanionic frameworks have large square antiprism and cuboctahedral voids where Ba and alkali metal cations are situated, forming [BaTe 8 ] and [ATe 12 ], respectively. The overall compositions are close to being charge balanced. The large [ATe 12 ] cuboctahedra allowed for significant anisotropic displacement of the A cations, as observed from both single crystal X-ray diffraction and heat capacity studies. Alkali cations rattling together with Cu atom displacement and disorder leads to the dispersion of phonons, thus softening the lattice and subsequently reducing the thermal conductivity. Evaluations of the electronic band structure revealed the occurrence of a narrow bandgap together with the presence of a flat band near the valence band maximum, giving rise to the high thermopower. The Cs and Rb analogues show a slope change in the temperature dependence of electrical resistivity around room temperature, which is typical for semimetals or degenerate semiconductors. For the as-synthesized and unoptimized materials, high values of the thermoelectric figure-of-merit of ~0.2 were observed at 623 K.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Monolayer 2D semiconducting tellurides for high-mobility electronics

Discovery and design of two-dimensional (2D) materials with suitable band gaps and high carrier mobility are of vital importance for the photonics, optoelectronics, and high-speed electronics. In this work, based on first principles calculations using density functional theory with Perdew-Burke-Ernzerhof and Heyd-Scuseria-Ernzerhoffunctionals, we introduce a family of monolayer isostructural semiconducting tellurides MNTe 4 , with M={Ti,Zr,Hf} and N={Si,Ge}. We find that these compounds have been identified to possess direct band gaps from 1.0 to 1.31 eV, which are well suited for photonics and optoelectronics applications. Additionally, anisotropic in-plane transport behavior is observed, and small electron and hole (0.11–0.15m e ) effective masses are identified along the dominant transport direction. Ultrahigh carrier mobility is predicted for this family of 2D compounds, which host great promise for potential applications in high-speed electronic devices. Furthermore, detailed analysis of electronic structures reveals the origins of the promising properties of this unique class of 2D telluride materials.

2-dimensional systems↗
DOE OSTI2020

A Density Functional Theory (DFT) Study on the Effect of Chlorine in the Magnesium Zinc Oxide (MZO) Front Interface for Cadmium Telluride (CdTe) Thin Film Solar Cells

Cadmium telluride photovoltaics has benefitted greatly from the cadmium chloride treatment which causes a remarkable improvement in cell efficiencies. This work investigates the effect of elemental chlorine at the interface between the magnesium zinc oxide front contact and the cadmium telluride absorber in such a device. Band alignment including band bending and interface states and its role in potential charge carrier transport is the key feature studied. It is seen that a small amount of chlorine is leads to a more desirable band alignment. Higher concentrations of chlorine result in unfavorable band characteristics.

14 SOLAR ENERGY↗
DOE OSTI2023

Cadmium Telluride Accelerator Consortium (CTAC)

The United States is the leader in cadmium telluride (CdTe) photovoltaic (PV) manufacturing, and CdTe is the second most-deployed solar technology in the world. The CdTe Accelerator Consortium (CTAC) was formed to enhance U.S. technology leadership and competitiveness in CdTe photovoltaics (PV) including increasing cell efficiencies, decreasing module costs, and maintaining or increasing domestic CdTe PV material and module production. Leadership for the 3-year consortium was selected by an NREL team through a competitive solicitation. CTAC was formally announced on August 1st by U.S. Secretary of Energy Jennifer M. Granholm and U.S. Representative Marcy Kaptur at an event held at University of Toledo. We will give an overview of CTAC research directions along with their goals and activities. We can also discuss how CTAC relates to the National Renewable Energy Laboratory (NREL) and to the U.S. Manufacturing of Advanced Cadmium Telluride Photovoltaics Consortium (US-MAC). Visit our poster to find out who leads CTAC and how you can get involved.

costs↗
DOE OSTI2021

Germanium Telluride Chalcogenide Switches for RF Applications

This project developed prototype germanium telluride switches, which can be used in RF applications to improve SWAP (size, weight, and power) and signal quality in RF systems. These switches can allow for highly reconfigurable systems, including antennas, communications, optical systems, phased arrays, and synthetic aperture radar, which all have high impact on current National Security goals for improved communication systems and communication technology supremacy. The final result of the project was the demonstration of germanium telluride RF switches, which could act as critical elements necessary for a single chip RF communication system that will demonstrate low SWAP and high reconfigurability

42 ENGINEERING↗
NASA NTRS1995

Growth rates and interface shapes in germanium and lead tin telluride observed in-situ, real-time in vertical Bridgman furnaces

Using the advanced technology developed to visualize the melt-solid interface in low Prandtl number materials, crystal growth rates and interface shapes have been measured in germanium and lead tin telluride semiconductors grown in vertical Bridgman furnaces. The experimental importance of using in-situ, real time observations to determine interface shapes, to measure crystal growth rates, and to improve furnace and ampoule designs is demonstrated. The interface shapes observed in-situ, in real-time were verified by quenching and mechanically induced interface demarcation, and they were also confirmed using machined models to ascertain the absence of geometric distortions. Interface shapes depended upon the interface position in the furnace insulation zone, varied with the nature of the crystal being grown, and were dependent on the extent of transition zones at the ends of the ampoule. Actual growth rates varied significantly from the constant translation rate in response to the thermophysical properties of the crystal and its melt and the thermal conditions existing in the furnace at the interface. In the elemental semiconductor germanium the observed rates of crystal growth exceeded the imposed translation rate, but in the compound semiconductor lead tin telluride the observed rates of growth were less than the translation rate. Finally, the extent of ampoule thermal loading influenced the interface positions, the shapes, and the growth rates.

Barber, P. G.↗
NASA NTRS2000

The Effect of Microgravity on the Growth of Lead Tin Telluride

The main objective of this research was to present a model for the prediction of the effect of the microgravity environment on the growth of Lead Tin Telluride. The attitude change and its relation to the experimental objectives: The main objective for the AADSF experiment on USMP 3 involving LTT growth was to estimate the effect of ampoule orientation on the axial and radial segregation of tin telluride. As the furnace was not situated on a gimbal there was no possibility to reorient the ampoule during the flight. Instead the only way to change the growth orientation was to change the attitude of the orbiter. This was accomplished by vernier rocket firings. In what follows it must be noted that the orbiter body coordinates are such that the positive z axis points outward from the 'belly', the positive 'x' axis points outwards from the nose and the positive 'y' axis points outwards from the starboard side. The furnace which was in the pay load had its axis aligned with the orbiter's 'z' axis with the hot end closest to the shuttle body. There were basically three orientations that were desired. These corresponded to the ampoule being seen as a heated from above (thermally stable-solutally unstable) configuration, the heated from below (where the instabilities were reversed from the first orientation) configuration and an 'in between' case where the ampoule axis was misaligned with respect to the orbiters 'g(sub z)' axis.

Narayanan, R.↗
NASA NTRS2013

Fabrication of Nanovoid-Imbedded Bismuth Telluride with Low Dimensional System

A new fabrication method for nanovoids-imbedded bismuth telluride (Bi--Te) material with low dimensional (quantum-dots, quantum-wires, or quantum-wells) structure was conceived during the development of advanced thermoelectric (TE) materials. Bismuth telluride is currently the best-known candidate material for solid-state TE cooling devices because it possesses the highest TE figure of merit at room temperature. The innovative process described here allows nanometer-scale voids to be incorporated in Bi--Te material. The final nanovoid structure such as void size, size distribution, void location, etc. can be also controlled under various process conditions.

Chu, Sang-Hyon↗
NASA NTRS2014

Method of Creating Micro-scale Silver Telluride Grains Covered with Bismuth Nanoparticles

Provided is a method of enhancing thermoelectric performance by surrounding crystalline semiconductors with nanoparticles by contacting a bismuth telluride material with a silver salt under a substantially inert atmosphere and a temperature approximately near the silver salt decomposition temperature; and recovering a metallic bismuth decorated material comprising silver telluride crystal grains.

Kim, Hyun-Jung↗
DOE OSTI2021

Dynamically Tunable Terahertz Emission Enabled by Anomalous Optical Phonon Responses in Lead Telluride

Lead telluride (PbTe), a narrow bandgap semiconductor commonly used in infrared detectors, exhibits anomalous vibrational and structural properties, making it appealing for thermoelectrics. Despite significant fundamental interest in the microscopic origins of its unusual vibrational properties, the optical functionalities stemming from phonons and electron–phonon coupling in PbTe have not been closely investigated. This work reports measurements of terahertz (THz) radiation from a PbTe single crystal following ultrafast optical excitation and investigates IR-active phonon responses as a function of excitation fluence and temperature. We uncover a spectrally tunable THz emission peak enabled by an epsilon-near-zero response of the coupled plasmon–longitudinal optical phonon mode that can be dynamically shifted via tuning photocarrier density. Spectral tunability (Δω/ω = 25%) is significant and beyond what has been achieved by any other THz emitter. In addition, the emitted THz fields reveal signatures of a zone center transverse optical phonon anomaly and unveil a new mode at 0.3 THz that diminishes in amplitude under increasing photocarrier density. Temperature-dependent measurements suggest that the transverse-like modes at 1 and 1.5 THz are possibly of different origins. These results indicate that the unusual phononic properties in PbTe are tunable via photoexcitation and enable new optical functionalities in THz applications, such as spectrally tunable emitters and all-optical modulators.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Impact of selenium addition to the cadmium-zinc-telluride matrix for producing high energy resolution X-and gamma-ray detectors

Abstract Both material quality and detector performance have been steadily improving over the past few years for the leading room temperature radiation detector material cadmium-zinc-telluride (CdZnTe). However, although tremendous progress being made, CdZnTe still suffers from high concentrations of performance-limiting defects, such as Te inclusions, networks of sub-grain boundaries and compositional inhomogeneity due to the higher segregation coefficient of Zn. Adding as low as 2% (atomic) Se into CdZnTe matrix was found to successfully mitigate many performance-limiting defects and provide improved compositional homogeneity. Here we report record-high performance of Virtual Frisch Grid (VFG) detector fabricated from as-grown Cd 0.9 Zn 0.1 Te 0.98 Se 0.02 ingot grown by the Traveling Heater Method (THM). Benefiting from superior material quality, we achieved superb energy resolution of 0.77% at 662 keV (as-measured without charge-loss correction algorithms) registered at room temperature. The absence of residual thermal stress in the detector was revealed from white beam X-ray topographic images, which was also confirmed by Infra-Red (IR) transmission imaging under cross polarizers. Furthermore, neither sub-grain boundaries nor their networks were observed from the X-ray topographic image. However, large concentrations of extrinsic impurities were revealed in as-grown materials, suggesting a high likelihood for further reduction in the energy resolution after improved purification of the starting material.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Nitrogen p-type doping in polycrystalline zinc selenide telluride films

Nitrogen-doped zinc selenide telluride (N:ZnSe x Te 1−x ) is of interest because it is one of the widest-gap II–VI semiconductors that can still be doped p-type with reasonably high hole concentrations. We sputter deposit N:ZnSe x Te 1−x films, varying Se/(Se + Te), or x, from 0 to 0.7, N 2 flow rate from 0.25 to 0.75 sccm, and substrate temperature from 250 to 370 °C. Increasing x from 0 to 0.39 at the optimal temperature of 370 °C and N 2 flow rate of 0.5 sccm leads to 1.3 atomic % nitrogen incorporation and wurtzite phase stabilization. Such doping and alloying increases hole concentration from 3 × 10 18 cm −3 to 3 × 10 19 cm −3 , although mobility drops from 0.4 to 0.02 cm 2 V −1 s −1 . Our sputtered N:ZnSe 0.38 Te 0.62 has an absorption onset 0.1 eV greater than the ZnTe value of 1.87 eV. Increasing x from 0 to 0.51 enhances transmittance by moving absorption onset from 1.87 to 2.11 eV with diminished band gap bowing likely due to disorder, and increases the work function from 5.12 to 5.42 eV. This combination of tunable properties makes sputtered N:ZnSe x Te 1−x desirable for transparent p-type contacts in polycrystalline Cd(Se,Te) optoelectronic devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Unsupervised Learning for Improved Gamma-Ray Spectrometry in Pixelated Cadmium Zinc Telluride (CZT) Detectors

Machine learning has been found to be ubiquitously useful across many industries, presenting an opportunity to improve radiation detection performance using data-driven algorithms. Improved detector resolution can aid in the detection, identification, and quantification of radionuclides. Here, in this work, a novel, data-driven, unsupervised learning approach is developed to improve detector spectral characteristics by learning, and subsequently rejecting, poorly performing regions of the pixelated detector. Feature engineering is used to fit individual characteristic photo peaks to a Doniach lineshape with a linear background model. Then, principal component analysis is used to learn a lower-dimension latent space representation of each photo peak where the pixels are clustered, and subsequently ranked, based on the cluster mean distance to an optimal point. Pixels within the worst cluster(s) are rejected to improve the full-width at half-maximum (FWHM) by 10% to 15% (relative to the bulk detector) at 50% net efficiency when applied to training data obtained from measurements of a 100 μCi 154 Eu source using a H3D M400i pixelated cadmium zinc telluride detector. These results compare well with, but do not outperform, a greedy algorithm that accumulates pixels in order of FWHM from lowest to highest used as a benchmark. In the future, this approach can be extended to include the detector energy and angular response. Finally, the model is applied to newly seen natural and enriched uranium spectra relevant for nuclear safeguards applications.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

Cadmium Magnesium Telluride for Next-Generation X-Ray Free Electron Laser, Synchrotron, and Many Other Applications

We developed a picosecond photodetector based on our Bridgman-grown and specially engineered cadmium magnesium telluride (Cd 1–x MgxTe) single crystal that is sensitive to both optical and X-ray pulses for coarse timing in free-electron laser applications. Cd 1–x MgxTe is a widebandgap semiconductor with potential applications, not only in optoelectronics, but also in particle physics as an intense pulse radiation detector for bremsstrahlung, X-ray/gamma-ray radiation, thermal neutrons, and medical imaging. For femtosecond optical and X-ray crosscorrelation, the material must have a very short lifetime, a condition that is opposite to that required for nuclear spectroscopy applications. At the same time, the material also needs to have a very low bulk leakage current, in the 10–90 nA range for voltages to even 1000 V. Hence, the ability to tailor or engineer the material is very crucial. Picosecond response and the crystal growth of this specially engineered Cd 1–x MgxTe material are presented. Furthermore, other characterization and transient measurements are discussed along with room-temperature semiconductor detector performance for other nuclear radiation detection applications.

36 MATERIALS SCIENCE↗