THz frequency multiplier chains based on planar Schottky diodes
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The performance as a THz-frequency modulator of a small-area Schottky diode mounted in a corner-cube antenna is evaluated, including the effects of carrier inertia and dielectric relaxation. Calculations are performed for a 1.4-micron diameter diode operating at a carrier frequency of 2.252 THz and a modulation frequency of 8 GHz. The phase modulation is found to completely dominate the amplitude modulation. The performance is shown to be degraded well below the plasma frequency in the undepleted epilayer due to the presence of a second resonance caused by the interaction of the barrier capacitance and the effective inductance due to carrier inertia. An increase in epilayer doping (reducing the diode radius) may improve the single-sideband conversion efficiency by about 20 dB.
Abstract Subwavelength metallic resonators provide a route to achieving strong light–matter coupling by means of tight confinement of resonant electromagnetic fields. Investigation of such resonators however often presents experimental difficulties, particularly at terahertz (THz) frequencies. A single subwavelength resonator interacts weakly with THz beams, making it difficult to probe it using far‐field methods, whereas arrays of resonators exhibit inter‐resonator coupling, which affect the resonator spectral signature and field confinement. Here, traditional far‐field THz spectroscopy is systematically compared with aperture‐type THz near‐field microscopy for investigating complementary THz resonators. While the far‐field method proves impractical for measuring single resonators, the near‐field technique gives high signal‐to‐noise spectral information, only achievable in the far‐field with resonator arrays. At the same time, the near‐field technique allows to analyze single resonators without significant interaction with the near‐field probe. Furthermore, the near‐field technique allows highly confined fields and surface waves to be mapped in space and time. This information gives invaluable insight into spectral response in resonator arrays. This near‐field microscopy and spectroscopy method enables investigations of strong light–matter coupling at THz frequencies in the single‐resonator regime.
Diffusion-cooled Nb hot-electron bolometer (HEB) mixers have the potential to simultaneously achieve high intermediate frequency (IF) bandwidths and low mixer noise temperatures for operation at THz frequencies (above the superconductive gap energy). We have measured the IF signal bandwidth at 630 GHz of Nb devices with lengths L = 0.3, 0.2, and 0.1 micrometer in a quasioptical mixer configuration employing twin-slot antennas. The 3-dB EF bandwidth increased from 1.2 GHz for the 0.3 gm long device to 9.2 GHz for the 0.1 gm long device. These results demonstrate the expected 1/L squared dependence of the IF bandwidth at submillimeter wave frequencies for the first time, as well as the largest EF bandwidth obtained to date. For the 0.1 gm device, which had the largest bandwidth, the double sideband (DSB) noise temperature of the receiver was 320-470 K at 630 GHz with an absorbed LO power of 35 nW, estimated using the isothermal method. A version of this mixer with the antenna length scaled for operation at 2.5 THz has also been tested. A DSB receiver noise temperature of 1800 plus or minus 100 K was achieved, which is about 1,000 K lower than our previously reported results. These results demonstrate that large EF bandwidth and low-noise operation of a diffusion-cooled HEB mixer is possible at THz frequencies with the same device geometry.
This report summarizes work done under NASA Grant NAG2-1062 awarded to the University of Colorado. The project goal was to evaluate the scientific capabilities and technical requirements for a far-infrared heterodyne spectrometer suitable for the SOFIA Airborne Observatory, which is now being developed by NASA under contract to the Universities Space Research Association (USRA). The conclusions detailed below include our specific recommendations for astronomical observations, as well as our intended technical approach for reaching these scientific goals. These conclusions were presented to USRA in the form of a proposal to build this instrument. USRA subsequently awarded the University of Colorado a 3-year grant (USRA 8500-98-010) to develop the proposed Hot-Electron micro-Bolometer (HEB) mixer concept for high frequencies above 3 THz, as well as other semiconductor mixer technologies suitable for high sensitivity receivers in the 2-6 THz frequency band.
The project goal was to evaluate the scientific capabilities and technical requirements for a far-infrared heterodyne spectrometer suitable for the SOFIA Airborne Observatory, which is now being developed by NASA under contract to the Universities Space Research Association (USRA). The conclusions detailed below include our specific recommendations for astronomical observations, as well as our intended technical approach for reaching these scientific goals. These conclusions were presented to USRA in the form of a proposal to build this instrument. USRA subsequently awarded the University of Colorado a 3-year grant to develop the proposed Hot-Electron micro-Bolometer (HEB) mixer concept for high frequencies above 3 THz, as well as other semiconductor mixer technologies suitable for high sensitivity receivers in the 2-6 THz frequency band.
In semiconductor quantum well structures, the intersubband energy separation can be adjusted to the terahertz (THz) frequency range by changing the well width and material combinations. The electronic and optical properties of these nanostructures can also be controlled by an applied dc electric field. These unique features lead to a large frequency tunability of the quantum well devices. In the on-going project of modeling of the THz lasers, we investigate the possibility of using optical pumping to generate THz radiation based on intersubband transitions in semiconductor quantum wells. We choose the optical pumping because in the electric current injection it is difficult to realize population inversion in the THz frequency range due to the small intersubband separation (4-40 meV). We considered both small conduction band offset (GaAs/AlGaAs) and large band offset (InGaAs/AlAsSb) quantum well structures. For GaAs/AlGaAs quantum wells, mid-infrared C02 lasers are used as pumping sources. For InGaAs/AlAsSb quantum wells, the resonant intersubband transitions can be excited by the near-infrared diode lasers. For three- and four-subband quantum wells, we solve the pumpfield-induced nonequilibrium distribution function for each subband of the quantum well system from a set of rate equations that include both intrasubband and intersubband relaxation processes. Taking into account the coherent interactions between pump and THz (signal) waves, we calculate the optical gain for the THz field. The gain arising from population inversion and stimulated Raman processes is calculated in a unified manner. A graph shows the calculated THz gain spectra for three-subband GaAs/AlGaAs quantum wells. We see that the coherent pump and signal wave interactions contribute significantly to the gain. The pump intensity dependence of the THz gain is also studied. The calculated results are shown. Because of the optical Stark effect and pump-induced population redistribution, the maximum THz gain saturates at larger pump intensities.
Abstract Excitation of Dirac plasmon polaritons (DPPs) in bi‐dimensional materials have attracted considerable interest in recent years, both from perspectives of understanding their physics and exploring their transformative potential for nanophotonic devices, including ultra‐sensitive plasmonic sensors, ultrafast saturable absorbers, modulators, and switches. Topological insulators (TIs) represent an ideal technological platform in this respect because they can support plasmon polaritons formed by Dirac carriers in the topological surface states. Tracing propagation of DPPs is a very challenging task, particularly at terahertz (THz) frequencies, where the DPP wavelength becomes over one order of magnitude shorter than the free space photon wavelength. Furthermore, severe attenuation hinders the comprehensive analysis of their characteristics. Here, the properties of DPPs in real TI‐based devices are revealed. Bi 2 Se 3 rectangular antennas can efficiently confine the propagation of DPPs to a single dimension and, as a result, enhance the DPPs visibility despite the strong intrinsic attenuation. The plasmon dispersion and loss properties from plasmon profiles are experimentally determined, along the antennas, obtained using holographic near‐field nano‐imaging in a wide range of THz frequencies, from 2.05 to 4.3 THz. The detailed investigation of the unveiled DPP properties can guide the design of novel topological quantum devices exploiting their directional propagation.
Series-fed coplanar waveguide embedding circuits are being developed for terahertz mixers using, in particular, submicron-sized superconducting devices, such as hot electron bolometers as the nonlinear element. Although these mixers show promising performance, they usually also show a considerable downward shift in the center frequency, when compared with simulations obtained by using simplified models. This makes it very difficult to design low-noise mixers for a given THz frequency. This shiftis principally caused by parasitics due to the extremely small details (in terms of wavelength) of the device, and by the electrical properties of the RF choke filter in the DC/IF line. In this paper, we present an improved equivalent network model of such mixer circuits which agrees with measured results at THz frequencies and we propose a new set of THz bolometric mixers that have been fabricated and are currently being tested.
Two-dimensional (2D) van der Waals materials are shaping the landscape of next-generation devices, offering significant technological value thanks to their unique, tunable, and layer-dependent electronic and optoelectronic properties. Time-domain spectroscopic techniques at terahertz (THz) frequencies offer noninvasive, contact-free methods for characterizing the dynamics of carriers in 2D materials. They also pave the path toward the applications of 2D materials in detection, imaging, manufacturing, and communication within the increasingly important THz frequency range. In this paper, we overview the synthesis of 2D materials and the prominent THz spectroscopy techniques: THz time-domain spectroscopy, optical-pump THz-probe technique, and optical pump–probe THz spectroscopy. Through a confluence of experimental findings, numerical simulation, and theoretical analysis, we present the current understanding of the rich ultrafast physics of technologically significant 2D materials: graphene, transition metal dichalcogenides, MXenes, perovskites, topological 2D materials, and 2D heterostructures. Finally, we offer a perspective on the role of THz characterization in guiding future research and in the quest for ideal 2D materials for new applications.
A third-order distributed feedback laser has an active medium disposed on a substrate as a linear array of segments having a series of periodically spaced interstices therebetween and a first conductive layer disposed on a surface of the active medium on each of the segments and along a strip from each of the segments to a conductive electrical contact pad for application of current along a path including the active medium. Upon application of a current through the active medium, the active medium functions as an optical waveguide, and there is established an alternating electric field, at a THz frequency, both in the active medium and emerging from the interstices. Spacing of adjacent segments is approximately half of a wavelength of the THz frequency in free space or an odd integral multiple thereof, so that the linear array has a coherence length greater than the length of the linear array.
Dedicated spectrometers for terahertz radiation with [0.3, 30] THz frequencies using traditional optomechanical interferometry are substantially less common than their infrared and microwave counterparts. This paper presents the design and initial performance measurements of a tabletop Fourier transform spectrometer (FTS) for multi-terahertz radiation using infrared optics in a Michelson arrangement. This is coupled to a broadband pyroelectric photodetector designed for [0.1, 30] THz frequencies. We measure spectra of narrowband and broadband input radiation to characterize the performance of this instrument above 10 THz, where signal-to-noise is high. This paves the groundwork for planned upgrades to extend below 10 THz. We also briefly discuss potential astroparticle physics applications of such FTS instruments to broadband axion dark matter searches, whose signature comprises low-rate monochromatic photons with unknown frequency.
Antiferromagnetic spin motion at terahertz (THz) frequencies attracts growing interests for fast spintronics, however, their smaller responses to external field inhibit device application. Recently the noncollinear antiferromagnet Mn 3 Sn, a Weyl semimetal candidate, was reported to show large anomalous Hall effect (AHE) at room temperature comparable to ferromagnets. Dynamical aspect of such large responses is an important issue to be clarified for future THz data processing. Here the THz anomalous Hall conductivity in Mn 3 Sn thin films is investigated by polarization-resolved spectroscopy. Large anomalous Hall conductivity Re σxyð Þ ω 20 Ω1cm1 at THz frequencies is clearly observed as polarization rotation. A peculiar temperature dependence corresponding to the breaking/recovery of symmetry in the spin texture is also discussed. Observation of the THz AHE at room temperature demonstrates the ultrafast readout for the antiferromagnetic spintronics using Mn3Sn, and will also open new avenue for studying nonequilibrium dynamics in Weyl antiferromagnets.
Near-ideal GaAs Schottky barrier diodes especially designed for mixing applications in the THz frequency range are presented. A diode fabrication process for submicron diodes with near-ideal electrical and noise characteristics is described. This process is based on the electrolytic pulse etching of GaAs in combination with an in-situ platinum plating for the formation of the Schottky contacts. Schottky barrier diodes with a diameter of 1 micron fabricated by the process have already shown excellent results in a 650 GHz waveguide mixer at room temperature. A conversion loss of 7.5 dB and a mixer noise temperature of less than 2000 K have been obtained at an intermediate frequency of 4 GHz. The optimization of the diode structure and the technology was possible due to the development of a generalized Schottky barrier diode model which is valid also at high current densities. The common diode design and optimization is discussed on the basis of the classical theory. However, the conventional fomulas are valid only in a limited forward bias range corresponding to currents much smaller than the operating currents under submillimeter mixing conditions. The generalized new model takes into account not only the phenomena occurring at the junction such as current dependent recombination and drift/diffusion velocities, but also mobility and electron temperature variations in the undepleted epi-layer. Calculated diode I/V and noise characteristics are in excellent agreement with the measured values. Thus, the model offers the possibility of optimizing the diode structure and predicting the diode performance under mixing conditions at THz frequencies.
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The current state of the art for photomixer based sources is explored in light of heterodyne local oscillator and coherent tests sources for antenna and component characterization at THz frequencies.
Vigorous research efforts during the past several decades have successfully closed the “terahertz gap” between microwaves and infrared light, offering new and increasingly efficient ways to produce, detect, and manipulate radiation fields in the terahertz (THz) frequency range. In our laboratory, THz time-domain spectroscopy (THz-TDS) and optical-pump THz-probe (OPTP) experiments have been routinely utilized as ultrafast spectroscopy tools to investigate a variety of emerging quantum materials and metamaterials. The ultrafast THz pulses are produced by femtosecond laser excitation of photoconductive antennas, semiconductor surfaces (InAs), and nonlinear crystals (ZnTe, GaSe, and LiNbO 3 ). Photoconductive antennas and nonlinear crystals also allow for the coherent detection of these pulses in the time domain, with amplitude and phase spectra obtained in the frequency domain via fast Fourier transform. Although such solid-state schemes are highly desirable in many aspects and thus also commonly utilized in many research laboratories and industrial applications, they typically suffer from limited bandwidths due to the absorption and frequency dispersion induced primarily by phonon resonances, limiting THz applications such as spectroscopy of emerging materials, imaging and detection, and biomedical characterization.