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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

The performance of Schottky diodes as far-infrared modulators

The performance as a THz-frequency modulator of a small-area Schottky diode mounted in a corner-cube antenna is evaluated, including the effects of carrier inertia and dielectric relaxation. Calculations are performed for a 1.4-micron diameter diode operating at a carrier frequency of 2.252 THz and a modulation frequency of 8 GHz. The phase modulation is found to completely dominate the amplitude modulation. The performance is shown to be degraded well below the plasma frequency in the undepleted epilayer due to the presence of a second resonance caused by the interaction of the barrier capacitance and the effective inductance due to carrier inertia. An increase in epilayer doping (reducing the diode radius) may improve the single-sideband conversion efficiency by about 20 dB.

Grossman, Erich N.↗
NASA NTRS1999

Noise and Bandwidth Measurements of Diffusion-Cooled Nb Hot-Electron Bolometer Mixers at Frequencies Above the Superconductive Energy Gap

Diffusion-cooled Nb hot-electron bolometer (HEB) mixers have the potential to simultaneously achieve high intermediate frequency (IF) bandwidths and low mixer noise temperatures for operation at THz frequencies (above the superconductive gap energy). We have measured the IF signal bandwidth at 630 GHz of Nb devices with lengths L = 0.3, 0.2, and 0.1 micrometer in a quasioptical mixer configuration employing twin-slot antennas. The 3-dB EF bandwidth increased from 1.2 GHz for the 0.3 gm long device to 9.2 GHz for the 0.1 gm long device. These results demonstrate the expected 1/L squared dependence of the IF bandwidth at submillimeter wave frequencies for the first time, as well as the largest EF bandwidth obtained to date. For the 0.1 gm device, which had the largest bandwidth, the double sideband (DSB) noise temperature of the receiver was 320-470 K at 630 GHz with an absorbed LO power of 35 nW, estimated using the isothermal method. A version of this mixer with the antenna length scaled for operation at 2.5 THz has also been tested. A DSB receiver noise temperature of 1800 plus or minus 100 K was achieved, which is about 1,000 K lower than our previously reported results. These results demonstrate that large EF bandwidth and low-noise operation of a diffusion-cooled HEB mixer is possible at THz frequencies with the same device geometry.

Wyss, R. A.↗
NASA NTRS1998

Far-Infrared Heterodyne Spectrometer for SOFIA

This report summarizes work done under NASA Grant NAG2-1062 awarded to the University of Colorado. The project goal was to evaluate the scientific capabilities and technical requirements for a far-infrared heterodyne spectrometer suitable for the SOFIA Airborne Observatory, which is now being developed by NASA under contract to the Universities Space Research Association (USRA). The conclusions detailed below include our specific recommendations for astronomical observations, as well as our intended technical approach for reaching these scientific goals. These conclusions were presented to USRA in the form of a proposal to build this instrument. USRA subsequently awarded the University of Colorado a 3-year grant (USRA 8500-98-010) to develop the proposed Hot-Electron micro-Bolometer (HEB) mixer concept for high frequencies above 3 THz, as well as other semiconductor mixer technologies suitable for high sensitivity receivers in the 2-6 THz frequency band.

Betz, A. L.↗
NASA NTRS1998

Far-Infrared Heterodyne Spectrometer for Sofia

The project goal was to evaluate the scientific capabilities and technical requirements for a far-infrared heterodyne spectrometer suitable for the SOFIA Airborne Observatory, which is now being developed by NASA under contract to the Universities Space Research Association (USRA). The conclusions detailed below include our specific recommendations for astronomical observations, as well as our intended technical approach for reaching these scientific goals. These conclusions were presented to USRA in the form of a proposal to build this instrument. USRA subsequently awarded the University of Colorado a 3-year grant to develop the proposed Hot-Electron micro-Bolometer (HEB) mixer concept for high frequencies above 3 THz, as well as other semiconductor mixer technologies suitable for high sensitivity receivers in the 2-6 THz frequency band.

Betz, A. L.↗
NASA NTRS1999

Modeling of THz Lasers Based on Intersubband Transitions in Semiconductor Quantum Wells

In semiconductor quantum well structures, the intersubband energy separation can be adjusted to the terahertz (THz) frequency range by changing the well width and material combinations. The electronic and optical properties of these nanostructures can also be controlled by an applied dc electric field. These unique features lead to a large frequency tunability of the quantum well devices. In the on-going project of modeling of the THz lasers, we investigate the possibility of using optical pumping to generate THz radiation based on intersubband transitions in semiconductor quantum wells. We choose the optical pumping because in the electric current injection it is difficult to realize population inversion in the THz frequency range due to the small intersubband separation (4-40 meV). We considered both small conduction band offset (GaAs/AlGaAs) and large band offset (InGaAs/AlAsSb) quantum well structures. For GaAs/AlGaAs quantum wells, mid-infrared C02 lasers are used as pumping sources. For InGaAs/AlAsSb quantum wells, the resonant intersubband transitions can be excited by the near-infrared diode lasers. For three- and four-subband quantum wells, we solve the pumpfield-induced nonequilibrium distribution function for each subband of the quantum well system from a set of rate equations that include both intrasubband and intersubband relaxation processes. Taking into account the coherent interactions between pump and THz (signal) waves, we calculate the optical gain for the THz field. The gain arising from population inversion and stimulated Raman processes is calculated in a unified manner. A graph shows the calculated THz gain spectra for three-subband GaAs/AlGaAs quantum wells. We see that the coherent pump and signal wave interactions contribute significantly to the gain. The pump intensity dependence of the THz gain is also studied. The calculated results are shown. Because of the optical Stark effect and pump-induced population redistribution, the maximum THz gain saturates at larger pump intensities.

Liu, Ansheng↗
NASA NTRS2002

Improved equivalent circuit for twin slot terahertz receivers

Series-fed coplanar waveguide embedding circuits are being developed for terahertz mixers using, in particular, submicron-sized superconducting devices, such as hot electron bolometers as the nonlinear element. Although these mixers show promising performance, they usually also show a considerable downward shift in the center frequency, when compared with simulations obtained by using simplified models. This makes it very difficult to design low-noise mixers for a given THz frequency. This shiftis principally caused by parasitics due to the extremely small details (in terms of wavelength) of the device, and by the electrical properties of the RF choke filter in the DC/IF line. In this paper, we present an improved equivalent network model of such mixer circuits which agrees with measured results at THz frequencies and we propose a new set of THz bolometric mixers that have been fabricated and are currently being tested.

HEB slot antennas CPW↗
NASA NTRS2015

Efficient Third-Order Distributed Feedback Laser with Enhanced Beam Pattern

A third-order distributed feedback laser has an active medium disposed on a substrate as a linear array of segments having a series of periodically spaced interstices therebetween and a first conductive layer disposed on a surface of the active medium on each of the segments and along a strip from each of the segments to a conductive electrical contact pad for application of current along a path including the active medium. Upon application of a current through the active medium, the active medium functions as an optical waveguide, and there is established an alternating electric field, at a THz frequency, both in the active medium and emerging from the interstices. Spacing of adjacent segments is approximately half of a wavelength of the THz frequency in free space or an odd integral multiple thereof, so that the linear array has a coherence length greater than the length of the linear array.

Hu, Qing↗
NASA NTRS1992

New approach to the design of Schottky barrier diodes for THz mixers

Near-ideal GaAs Schottky barrier diodes especially designed for mixing applications in the THz frequency range are presented. A diode fabrication process for submicron diodes with near-ideal electrical and noise characteristics is described. This process is based on the electrolytic pulse etching of GaAs in combination with an in-situ platinum plating for the formation of the Schottky contacts. Schottky barrier diodes with a diameter of 1 micron fabricated by the process have already shown excellent results in a 650 GHz waveguide mixer at room temperature. A conversion loss of 7.5 dB and a mixer noise temperature of less than 2000 K have been obtained at an intermediate frequency of 4 GHz. The optimization of the diode structure and the technology was possible due to the development of a generalized Schottky barrier diode model which is valid also at high current densities. The common diode design and optimization is discussed on the basis of the classical theory. However, the conventional fomulas are valid only in a limited forward bias range corresponding to currents much smaller than the operating currents under submillimeter mixing conditions. The generalized new model takes into account not only the phenomena occurring at the junction such as current dependent recombination and drift/diffusion velocities, but also mobility and electron temperature variations in the undepleted epi-layer. Calculated diode I/V and noise characteristics are in excellent agreement with the measured values. Thus, the model offers the possibility of optimizing the diode structure and predicting the diode performance under mixing conditions at THz frequencies.

Jelenski, A.↗
NASA NTRS2004

Accurate electromagnetic modeling of terahertz detectors

Twin slot antennas coupled to superconducting devices have been developed over the years as single pixel detectors in the terahertz (THz) frequency range for space-based and astronomy applications. Used either for mixing or direct detection, they have been object of several investigations, and are currently being developed for several missions funded or co-funded by NASA. Although they have shown promising performance in terms of noise and sensitivity, so far they have usually also shown a considerable disagreement in terms of performance between calculations and measurements, especially when considering center frequency and bandwidth. In this paper we present a thorough and accurate electromagnetic model of complete detector and we compare the results of calculations with measurements. Starting from a model of the embedding circuit, the effect of all the other elements in the detector in the coupled power have been analyzed. An extensive variety of measured and calculated data, as presented in this paper, demonstrates the effectiveness and reliability of the electromagnetic model at frequencies between 600 GHz and 2.5THz.

Hot Electron Bolometer (HEB)↗
NASA NTRS2004

Solid-state Terahertz Sources for Space Applications

This paper discusses the construction of solid-state frequency multiplier chains utilized far teraherz receiver applications such as the Herschel Space Observatory . Emphasis will he placed on the specific requirements to be met and challenges that were encountered. The availability of high power amplifiers at 100 GHz makes it possible to cascade frequency doublers and triplers with sufficient RF power to pump heterodyne receivers at THz frequencies. The environmental and mechanical constraints will be addressed as well as reliability issues.

solid state frequency↗
NASA NTRS2001

Laser Micromachining Fabrication of THz Components

Laser micromachining techniques can be used to fabricate high-quality waveguide structures and quasi-optical components to micrometer accuracies. Successful GHz designs can be directly scaled to THz frequencies. We expect this promising technology to allow the construction of the first fully integrated THz heterodyne imaging arrays. At the University of Arizona, construction of the first laser micromachining system designed for THz waveguide components fabrication has been completed. Once tested and characterized our system will be used to construct prototype THz lx4 focal plane mixer arrays, magic tees, AR coated silicon lenses, local oscillator source phase gratings, filters and more. Our system can micro-machine structures down to a few microns accuracy and up to 6 inches across in a short time. This paper discusses the design and performance of our micromachining system, and illustrates the type, range and performance of components this exciting new technology will make accessible to the THz community.

DrouetdAubigny, C.↗
NASA NTRS2016

Foreground Bias from Parametric Models of Far-IR Dust Emission

We use simple toy models of far-IR dust emission to estimate the accuracy to which the polarization of the cosmic microwave background can be recovered using multi-frequency fits, if the parametric form chosen for the fitted dust model differs from the actual dust emission. Commonly used approximations to the far-IR dust spectrum yield CMB residuals comparable to or larger than the sensitivities expected for the next generation of CMB missions, despite fitting the combined CMB plus foreground emission to precision 0.1 percent or better. The Rayleigh-Jeans approximation to the dust spectrum biases the fitted dust spectral index by (Delta)(Beta)(sub d) = 0.2 and the inflationary B-mode amplitude by (Delta)(r) = 0.03. Fitting the dust to a modified blackbody at a single temperature biases the best-fit CMB by (Delta)(r) greater than 0.003 if the true dust spectrum contains multiple temperature components. A 13-parameter model fitting two temperature components reduces this bias by an order of magnitude if the true dust spectrum is in fact a simple superposition of emission at different temperatures, but fails at the level (Delta)(r) = 0.006 for dust whose spectral index varies with frequency. Restricting the observing frequencies to a narrow region near the foreground minimum reduces these biases for some dust spectra but can increase the bias for others. Data at THz frequencies surrounding the peak of the dust emission can mitigate these biases while providing a direct determination of the dust temperature profile.

cosmic microwave background↗
NASA NTRS2014

Scalable Background-Limited Polarization-Sensitive Detectors for mm-wave Applications

We report on the status and development of polarization-sensitive detectors for millimeter-wave applications. The detectors are fabricated on single-crystal silicon, which functions as a low-loss dielectric substrate for the microwave circuitry as well as the supporting membrane for the Transition-Edge Sensor (TES) bolometers. The orthomode transducer (OMT) is realized as a symmetric structure and on-chip filters are employed to define the detection bandwidth. A hybridized integrated enclosure reduces the high-frequency THz mode set that can couple to the TES bolometers. An implementation of the detector architecture at Q-band achieves 90% efficiency in each polarization. The design is scalable in both frequency coverage, 30-300 GHz, and in number of detectors with uniform characteristics. Hence, the detectors are desirable for ground-based or space-borne instruments that require large arrays of efficient background-limited cryogenic detectors.

Millimeter-Wave Detectors↗
NASA NTRS2002

Terahertz technology and applications

Despite great scientific interest since at least the 1920's, the THz frequency range remains on e of the least tapped regions of the electromagnetic spectrum. Sandwiched between traditional microwave and optical technologies where there is a limited atmospheric propagation path, little commercial emphasis has been placed on THz systems. This has, perhaps fortunately, preserved some unique science and applications for tomorrow's technologies. For over 25 years the sole niche for THz technology has been in the high resolution spectroscopy and remote sensing areas where heterodyne and Fourier transform techniques have allowed astronomers, chemists, Earth, planetary and space scientists to measure, catalog and map thermal emission lines for a wide variety of lightweight molecules. As it turns out, no where else in the electromagnetic spectrum do we receive so much information about these chemical species. In fact, the universe is bathed in THz energy, most of it going unnoticed and undetected.

THz electromagnetic spectrum↗
NASA NTRS2016

Silicon Micromachined Modulated Metasurface Antennas in the Terahertz Range

This paper explores the capabilities of a class of metasurface (MTS), which consists of metalized cylinders on a ground plane, for the realization of modulated MTS antennas at terahertz (THz) frequencies. The proposed structure is particularly appropriate for being micromachined out of a silicon wafer by means of deep reactive ion etching (DRIE). The constraints that DRIE imposes in the design of the MTS unit cell are discussed, along with the advantages of silicon micromachined modulated MTSs with respect to other fabrication approaches in the THz range.

deep-reactive ion etching↗
NASA NTRS1995

Conversion gain and noise of niobium superconducting hot-electron-mixers

A study has been done of microwave mixing at 20 GHz using the nonlinear (power dependent) resistance of thin niobium strips in the resistive state. Our experiments give evidence that electron-heating is the main cause of the nonlinear phenomenon. Also a detailed phenomenological theory for the determination of conversion properties is presented. This theory is capable of predicting the frequency-conversion loss rather accurately for arbitrary bias by examining the I-V-characteristic. Knowing the electron temperature relaxation time, and using parameters derived from the I-V-characteristic also allows us to predict the -3 dB IF bandwidth. Experimental results are in excellent agreement with the theoretical predictions. The requirements on the mode of operation and on the film parameters for minimizing the conversion loss (and even achieving conversion gain) are discussed in some detail. Our measurements demonstrate an intrinsic conversion loss as low as 1 dB. The maximum IF frequency defined for -3 dB drop in conversion gain, is about 80 MHz. Noise measurements indicate a device output noise temperature of about 50 K and SSB mixer noise temperature below 250 K. This type of mixer is considered very promising for use in low-noise heterodyne receivers at THz frequencies.

CONVERSION GAIN↗