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Results for “TUNNEL DIODE”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1989

Submicron nickel-oxide-gold tunnel diode detectors for rectennas

The characteristics of a metal-oxide-metal (MOM) tunnel diode made of nickel, nickel-oxide, and gold, designed and fabricated by standard integrated circuit technology for use in FIR rectennas, are presented. The MOM tunnel diode was formed by overlapping a 0.8-micron-wide layer of 1000-A of nickel, which was oxidized to form a thin layer of nickel oxide, with a 1500 A-thick layer of gold. The dc current-voltage characteristics of the MOM diode showed that the current dependence on voltage was linear about zero bias up to a bias of about 70 mV. The maximum detection of a low-level signal (10-mV ac) was determined to be at a dc voltage of 70 mV across the MOM diode. The rectified output signal due to a chopped 10.6-micron CO2 laser incident upon the rectenna device was found to increase with dc bias, with a maximum value of 1000 nV for a junction bias of 100 mV at room temperature.

Hoofring, A. B.↗
NASA NTRS1969

Simple tunnel diode circuit for accurate zero crossing timing

Tunnel diode circuit, capable of timing the zero crossing point of bipolar pulses, provides effective design for a fast crossing detector. It combines a nonlinear load line with the diode to detect the zero crossing of a wide range of input waveshapes.

Metz, A. J.↗
NASA NTRS1992

5 mW parallel-connected resonant-tunnelling diode oscillator

A new type of resonant-tunneling diode (RTD) oscillator that generates 5 mW at 1.18 GHz is reported. This result was obtained by connecting in parallel 25 individual diodes designed for such a connection. This experiment demonstrates that RTDs can successfully be used in a chip-level power-combining circuit.

Stephan, K. D.↗
NASA NTRS1992

A quasioptically stabilized resonant-tunneling-diode oscillator for the millimeter- and submillimeter-wave regions

A semiconfocal open-cavity resonator has been used to stabilize a resonant-tunneling-diode waveguide oscillator at frequencies near 100 GHz. The high quality factor of the open cavity resulted in a linewidth of approximately 10 kHz at 10 dB below the peak, which is about 100 times narrower than the linewidth of an unstabilized waveguide oscillator. This technique is well suited for resonant-tunneling-diode oscillators in the submillimeter-wave region.

Brown, Elliott R.↗
NASA NTRS2008

Torque Sensor Based on Tunnel-Diode Oscillator

A proposed torque sensor would be capable of operating over the temperature range from 1 to 400 K, whereas a typical commercially available torque sensor is limited to the narrower temperature range of 244 to 338 K. The design of this sensor would exploit the wide temperature range and other desirable attributes of differential transducers based on tunnel-diode oscillators as described in "Multiplexing Transducers Based on Tunnel-Diode Oscillators". The proposed torque sensor would include three flexural springs that would couple torque between a hollow outer drive shaft and a solid inner drive shaft. The torque would be deduced from the torsional relative deflection of the two shafts, which would be sensed via changes in capacitances of two capacitors defined by two electrodes attached to the inner shaft and a common middle electrode attached to the outer shaft.

Chui, Talso↗
NASA NTRS1964

Monostable circuit with tunnel diode has fast recovery

A monostable multivibrator circuit using a tunnel diode makes it possible for the MSMV to exceed the performance of present multivibrators in two respects. The rise time of the output voltage is faster and the duty cycle is raised to approximately 95 percent.

Heffner, P.↗
NASA NTRS1995

Optically-Switched Resonant Tunneling Diodes for Space-Based Optical Communication Applications

We are developing a new type of digital photo-receiver that has the potential to perform high speed optical-to-electronic conversion with a factor of 10 reduction in component count and power dissipation. In this paper, we describe the room-temperature photo-induced switching of this InP-based device which consists of an InGaAs/AlAs resonant tunneling diode integrated with an InGaAs absorber layer. When illuminated at an irradiance of greater than 5 Wcm(exp -2) using 1.3 micromillimeter radiation, the resonant tunneling diode switches from a high-conductance to a low-conductance electrical state and exhibits a voltage swing of up to 800 mV.

Moise, T. S.↗
NASA NTRS1992

Resonant tunneling diodes as sources for millimeter and submillimeter wavelengths

High-quality Resonant Tunneling Diodes have been fabricated and tested as sources for millimeter and submillimeter wavelengths. The devices have shown excellent I-V characteristics with peak-to-valley current ratios as high as 6:1 and current densities in the range of 50-150 kA/cm(exp 2) at 300 K. Used as local oscillators, the diodes are capable of state of the art output power delivered by AlGaAs-based tunneling devices. As harmonic multipliers, a frequency of 320 GHz has been achieved by quintupling the fundamental oscillation of a klystron source.

Vanbesien, O.↗
NASA NTRS1993

Resonant tunnelling diode oscillator as an alternative LO for SIS receiver applications

The resonant tunnelling diode (RTD) oscillator has been demonstrated for the first time as a local oscillator (LO) in a heterodyne receiver. Noise measurements made on a sensitive 200 GHz superconductor-insulator-superconductor receiver using both a multiplied Gunn diode and an RTD oscillator as the LO revealed no difference in receiver noise as a function of oscillator type.

Blundell, R.↗