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At least 37 records · Page 2

Testing of Diode-Clamping in an Inductive Pulsed Plasma Thruster Circuit

Testing of a 5.5 kV silicon (Si) diode and 5.8 kV prototype silicon carbide (SiC) diode in an inductive pulsed plasma thruster (IPPT) circuit was performed to obtain a comparison of the resulting circuit recapture efficiency,eta(sub r), defined as the percentage of the initial charge energy remaining on the capacitor bank after the diode interrupts the current. The diode was placed in a pulsed circuit in series with a silicon controlled rectifier (SCR) switch, and the voltages across different components and current waveforms were collected over a range of capacitor charge voltages. Reverse recovery parameters, including turn-off time and peak reverse recovery current, were measured and capacitor voltage waveforms were used to determine the recapture efficiency for each case. The Si fast recovery diode in the circuit was shown to yield a recapture efficiency of up to 20% for the conditions tested, while the SiC diode further increased recapture efficiency to nearly 30%. The data presented show that fast recovery diodes operate on a timescale that permits them to clamp the discharge quickly after the first half cycle, supporting the idea that diode-clamping in IPPT circuit reduces energy dissipation that occurs after the first half cycle

Toftul, Alexandra↗

Aircrew coordination and decisionmaking: Peer ratings of video tapes made during a full mission simulation

Six professionally active, retired captains rated the coordination and decisionmaking performances of sixteen aircrews while viewing videotapes of a simulated commercial air transport operation. The scenario featured a required diversion and a probable minimum fuel situation. Seven point Likert-type scales were used in rating variables on the basis of a model of crew coordination and decisionmaking. The variables were based on concepts of, for example, decision difficulty, efficiency, and outcome quality; and leader-subordin ate concepts such as person and task-oriented leader behavior, and competency motivation of subordinate crewmembers. Five-front-end variables of the model were in turn dependent variables for a hierarchical regression procedure. The variance in safety performance was explained 46%, by decision efficiency, command reversal, and decision quality. The variance of decision quality, an alternative substantive dependent variable to safety performance, was explained 60% by decision efficiency and the captain's quality of within-crew communications. The variance of decision efficiency, crew coordination, and command reversal were in turn explained 78%, 80%, and 60% by small numbers of preceding independent variables. A principle component, varimax factor analysis supported the model structure suggested by regression analyses.

Murphy, M. R.↗

Development of a 1000V, 200A, low-loss, fast-switching, gate-assisted turn-off thyristor

The results of a program to develop a fast high power thyristor that can operate in switching circuits at frequencies of 10 to 20 kHz with very low power loss are given. Feasibility was demonstrated for a thyristor that blocks 1000V forward and reverse, conducts 200A, turns on in little more than 2 more microseconds with only 2A of gate drive, turns off in 3 microseconds with 2A of gate assist current and has an energy dissipation of only 12 mJ per pulse for a 20 microsecond half sine wave 200A pulse. Data were generated that clearly showed the tradeoffs that can be made between the turn off time and forward drop. The understanding of this relationship is necessary in the selection of deliverable thyristors with turn off times up to 7 microseconds to give improved efficiency in a series resonant dc to dc inverter application.

Schlegel, E. S.↗

Silicon Carbide High-Temperature Power Rectifiers Fabricated and Characterized

The High Temperature Integrated Electronics and Sensors (HTIES) team at the NASA Lewis Research Center is developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high power, and/or high-radiation conditions will enable significant improvements to a far ranging variety of applications and systems. These improvements range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. In the case of jet engines, uncooled operation of 300 to 600 C SiC power actuator electronics mounted in key high-temperature areas would greatly enhance system performance and reliability. Because silicon cannot function at these elevated temperatures, the semiconductor device circuit components must be made of SiC. Lewis' HTIES group recently fabricated and characterized high-temperature SiC rectifier diodes whose record-breaking characteristics represent significant progress toward the realization of advanced high-temperature actuator control circuits. The first figure illustrates the 600 C probe-testing of a Lewis SiC pn-junction rectifier diode sitting on top of a glowing red-hot heating element. The second figure shows the current-versus voltage rectifying characteristics recorded at 600 C. At this high temperature, the diodes were able to "turn-on" to conduct 4 A of current when forward biased, and yet block the flow of current ($quot;turn-off") when reverse biases as high as 150 V were applied. This device represents a new record for semiconductor device operation, in that no previous semiconductor electronic device has ever simultaneously demonstrated 600 C functionality, and 4-A turn-on and 150-V rectification. The high operating current was achieved despite severe device size limitations imposed by present-day SiC wafer defect densities. Further substantial increases in device performance can be expected when SiC wafer defect densities decrease as SiC wafer production technology matures.

Source record↗

Development of a 1000V, 200A, low-loss, fast-switching, gate-assisted turn-off thyristor

Feasibility was demonstrated for a thyristor that blocks 1000V forward and reverse, conducts 200A, and turns on in little more than 2 microsec with only 2A of gate drive. Its features include a turn-off time of 3 microsec achieved with 2A of gate assist current of a few microseconds duration and an energy dissipation of only 12 mJ per pulse for a 20 microsec half sine wave, 200A pulse. Extensive theoretical and experimental study of the electrical behavior of thyristors having a fast turn-off time have significantly improved the understanding of the physics of turning thyristor off. Thyristors of two new designs were fabricated and evaluated. The high speed and low power were achieved by a combination of gate amplification, cathode shunting, and gate-assisted turn-off. Two techniques for making this combination practical are described.

Schlegel, E. S.↗

5.8kV SiC PiN Diode for Switching of High-Efficiency Inductive Pulsed Plasma Thruster Circuits

Inductive Pulsed Plasma Thruster (IPPT) pulse circuits, such as those needed to operate the Pulsed Inductive Thruster (PIT), are required to quickly switch capacitor banks operating at a period of μs while conducting current at levels on the order of at least 10 kA. [1,2] For all iterations of the PIT to date, spark gaps have been used to discharge the capacitor bank through an inductive coil. Recent availability of fast, high‐power solid state switching devices makes it possible to consider the use of semiconductor switches in modern IPPTs. In addition, novel pre‐ionization schemes have led to a reduction in discharge energy per pulse for electric thrusters of this type, relaxing the switching requirements for these thrusters. [3,4] Solid state switches offer the advantage of greater controllability and reliability, as well as decreased drive circuit dimensions and mass relative to spark gap switches. The use of solid state devices such as Integrated Gate Bipolar Transistors (IGBTs), Gate Turn‐off Thyristors (GTOs) and Silicon‐Controlled Rectifiers (SCRs) often involves the use of power diodes. These semiconductor devices may be connected antiparallel to the switch for protection from reverse current, or used to reduce power loss in a circuit by clamping off current ringing. In each case, higher circuit efficiency may be achieved by using a diode that is able to transition, or 'switch,' from the forward conducting state ('on' state) to the reverse blocking state ('off' state) in the shortest amount of time, thereby minimizing current ringing and switching losses. Silicon Carbide (SiC) PiN diodes offer significant advantages to conventional fast‐switching Silicon (Si) diodes for high power and fast switching applications. A wider band gap results in a breakdown voltage 10 times that of Si, so that a SiC device may have a thinner drift region for a given blocking voltage. [5] This leads to smaller, lighter devices for high voltage applications, as well as reduced forward conduction losses, faster reverse recovery time (faster turn‐off), and lower‐magnitude reverse recovery current. In addition, SiC devices have lower leakage current as compared to their Si counterparts, and a high thermal conductivity, potentially allowing the former to operate at higher temperatures with a smaller, lighter heatsink (or no heatsink at all).

Toftul, Alexandra↗

Mixed conductive composites for ‘Low-Temperature’ thermo-chemical CO 2 splitting and syngas generation

An effective strategy to design platinum group metal (PGM) free redox catalysts for “low temperature” CO 2 splitting followed with methane partial oxidation was proposed and validated. Composites of mixed ionic-electronic conductive (MIEC) oxides were found to be highly effective at relatively low temperatures (600–750 °C). Specifically, perovskite structured LaNi 0.35 Fe 0.65 O 3 and rock salt structured Ce 0.85 Gd 0.1 Cu 0.05 O 2–δ , as two compatible yet structurally distinct MIEC oxides, were integrated into composite redox catalyst particles. Resulting from the synergistic effect of the two MIEC phases, 90% CO 2 to CO conversion was demonstrated at 750 °C. Up to 90% methane conversion with 96% CO selectivity was also achieved in the methane POx step. The redox catalysts were characterized in detail to illustrate the underlying mechanisms for the synergistic effects. Electrical conductivity relaxation (ECR) measurements indicated significantly lowered activation energy for lattice oxygen (O 2– ) migration (0.43 eV). The enhanced oxygen migration in turn led to reversible exsolution of active transition metal nanoparticles (Ni–Fe alloy) from the mixed oxide, serving as active sites for methane activation while further enhancing lattice oxygen exchange, as confirmed by in situ X-ray diffraction and transmission electron microscopy. In conclusion, the composite redox catalysts demonstrate superior redox activity, coke resistance, and long term redox stability, making them potentially suitable for CO 2 utilization and methane partial oxidation under a hybrid redox process scheme.

03 NATURAL GAS↗

Composite Mixed Ionic-electronic Conducting Materials for Low-Temperature Thermochemical CO 2 Splitting and Syngas Generation

An effective strategy to design platinum group metal (PGM) free redox catalysts for “low temperature” CO 2 splitting followed with methane partial oxidation was proposed and validated. Composites of mixed ionic-electronic conductive (MIEC) oxides were found to be highly effective at relatively low temperatures (600–750 °C). Specifically, perovskite structured LaNi 0.35 Fe 0.65 O 3 and rock salt structured Ce 0.85 Gd 0.1 Cu 0.05 O 2-δ , as two compatible yet structurally distinct MIEC oxides, were integrated into composite redox catalyst particles. Resulting from the synergistic effect of the two MIEC phases, 90% CO 2 to CO conversion was demonstrated at 750 °C. Up to 90% methane conversion with 96% CO selectivity was also achieved in the methane POx step. The redox catalysts were characterized in detail to illustrate the underlying mechanisms for the synergistic effects. Electrical conductivity relaxation (ECR) measurements indicated significantly lowered activation energy for lattice oxygen (O 2- ) migration (0.43 eV). The enhanced oxygen migration in turn led to reversible exsolution of active transition metal nanoparticles (Ni–Fe alloy) from the mixed oxide, serving as active sites for methane activation while further enhancing lattice oxygen exchange, as confirmed by in situ X-ray diffraction and transmission electron microscopy. As a result, the composite redox catalysts demonstrate superior redox activity, coke resistance, and long term redox stability, making them potentially suitable for CO 2 utilization and methane partial oxidation under a hybrid redox process scheme.

Jiang, Qiongqiong↗

Ionospheric convection driven by NBZ currents

Computer simulations of Birkeland currents and electric fields in the polar ionosphere during periods of northward IMF were conducted. When the IMF z component is northward, an additional current system, called the NBZ current system, is present in the polar cap. These simulations show the effect of the addition of NBZ currents on ionospheric convection, particularly in the polar cap. When the total current in the NBZ system is roughly 25 to 50 percent of the net region 1 and 2 currents, convection in the central portion of the polar cap reverses direction and turns sunward. This creates a pattern of four-cell convection with two small cells located in the polar cap, rotating in an opposite direction from the larger cells. When the Birkeland currents are fixed (constant current source), the electric field is reduced in regions of relatively high conductivity, which affects the pattern of ionospheric convection. Day-night asymmetries in conductivity change convection in such a way that the two polar-cap cells are located within the large dusk cell. When ionospheric convection is fixed (constant voltage source), Birkeland currents are increased in regions of relatively high conductivity. Ionospheric currents, which flow horizontally to close the Birkeland currents, are changed appreciably by the NBZ current system. The principal effect is an increase in ionospheric current in the polar cap.

Rasmussen, C. E.↗

Sequential Polarity-Reversing Circuit

Proposed circuit reverses polarity of electric power supplied to bidirectional dc motor, reversible electro-mechanical actuator, or other device operating in direction depending on polarity. Circuit reverses polarity each time power turned on, without need for additional polarity-reversing or direction signals and circuitry to process them.

Labaw, Clayton C.↗

Voltage reapplication rate control for commutation of thyristors

A circuit for commutating a thyristor (21) by shunting its current for a minimum interval, thereby removing sustaining voltage to said thyristor, then subsequently restoring voltage to said thyristor at a predetermined rate, utilizes a series combination of a commutation electronic switch (22) and an isolated dc voltage supply (23) connected in parallel with the thyristor. The voltage supply is arranged with a polarity that permits the current flowing through the thyristor in one direction to be bypassed through the series combination while the commutation switch is turned on and to reverse bias the thyristor when the commutation switch is fully on. A dv/dt control circuit (24) limits the rate of rise of voltage across the commutation switch (22) as it is turned off in response to a command input signal. The dv/dt control circuit is comprised of a constant current drive (31) and a capacitor (32) connected between the output terminal of the commutation switch and the control input terminal of the commutation switch. The thyristor may be a triac (40) with two commutation switches (42, 43), one for current of each polarity, or with a single commutation switch (55) and a bridge circuit (52-55) for selecting the polarity of the switch (56).

Rippel, Wally E.↗

Modeling Aircraft Wing Loads from Flight Data Using Neural Networks

Neural networks were used to model wing bending-moment loads, torsion loads, and control surface hinge-moments of the Active Aeroelastic Wing (AAW) aircraft. Accurate loads models are required for the development of control laws designed to increase roll performance through wing twist while not exceeding load limits. Inputs to the model include aircraft rates, accelerations, and control surface positions. Neural networks were chosen to model aircraft loads because they can account for uncharacterized nonlinear effects while retaining the capability to generalize. The accuracy of the neural network models was improved by first developing linear loads models to use as starting points for network training. Neural networks were then trained with flight data for rolls, loaded reversals, wind-up-turns, and individual control surface doublets for load excitation. Generalization was improved by using gain weighting and early stopping. Results are presented for neural network loads models of four wing loads and four control surface hinge moments at Mach 0.90 and an altitude of 15,000 ft. An average model prediction error reduction of 18.6 percent was calculated for the neural network models when compared to the linear models. This paper documents the input data conditioning, input parameter selection, structure, training, and validation of the neural network models.

Allen, Michael J.↗

Flight Measurements of Flying Qualities of a P-47D-30 Airplane (AAF No. 43-3441) to Determine Longitudinal Stability and Control and Stalling Characteristics

Flight tests have been made to determine the longitudinal stability and control and stalling characteristics of the P-47.E-30 airplane. The teat results show the airplane to be unstable stick free in any power-on condition even at the most forward center-of-gravity position tested. At the rearward center-of-gravity position tested the airplane also had neutral to negative stick-fixed stability with power on. The characteristics in accelerated flight were acceptable at the forward center-of-gravity position at low and high altitudes except at high speed where the control-force variations with acceleration were high. At the rearward center-of-gravity position, elevator-force reversals were experienced in turns at low speeds, and the force per g was low at all the other speeds. Ample stall warning was afforded in all the conditions tested and the stalling characteristics were very satisfactory except in the approach and wave-off conditions.

Kraft, Christopher C., Jr.↗

The tilts of corotating interaction regions at mid heliographic latitudes

Ulysses observations of corotating interaction regions (CIRs) at mid heliographic latitudes have shown that the flow downstream of the forward shock (or wave) on the leading edge of a CIR generally turns northward and westward, while the flow downstream of the reverse wave on the trailing edge generally turns southward and eastward. These systematic flow deflections are a natural consequence of large scale pressure gradients associated with the CIRs, and indicate that the forward waves tend to propagate toward and across the equator with increasing heliocentric distance, while the reverse waves tend to propagate toward the pole. Recent determinations of CIR shock normals using the Ulysses magnetic field data appear to confirm these plasma results (Burton, private communication). Numerical simulations indicate that these effects (which imply that CIRs are systematically tilted in the north-south direction at mid latitudes) are a natural consequence of the tilt of the solar magnetic dipole axis relative to the solar rotation axis. The present work utilizes a variety of techniques to analyze the flow deflections observed within CIRs from which we can infer the overall orientations of the CIRs and the speeds and directions of propagation of the waves. Where possible, the observations are quantitatively compared with the results of 3-dimensional MHD simulations.

Riley, Pete↗

Spin-tunnel investigation of a 1/13-scale model of the NASA AD-1 oblique-wing research aircraft

The spin and recovery characteristics of a 1/13-scale model of the NASA AD-1 oblique-wing research aircraft at wing-skew positions of 0, 25, 45, and 60 deg (right wing forward) were investigated. Spins were obtained for all wing-skew positions tested. For the unskewed wing position, two spin modes were possible. One spin mode was very steep and recoveries were obtained within 1 turn or less by rudder reversal. The second spin mode was flat and fast; the angle of attack was about 75 deg and the spin rate was about 145 deg/sec (2.5 seconds per turn). For the skewed wing positions, spins were obtained only in the direction of the forward-skewed wing (right wing forward). No spins were obtained to the left when the wing was skewed with the right wing forward. Recoveries should be attempted by deflecting the rudder to full against the spin, the ailerons to full with the spin, and movement of the wings to 0 deg skew. If the wing is skewed, the recovery may not be effected until the wing skew approaches 0 deg.

White, W. L.↗

Piezomagnetic switching and complex phase equilibria in uranium dioxide

Abstract Actinide materials exhibit strong spin–lattice coupling and electronic correlations, and are predicted to host new emerging ground states. One example is piezomagnetism and magneto-elastic memory effect in the antiferromagnetic Mott-Hubbard insulator uranium dioxide, though its microscopic nature is under debate. Here, we report X-ray diffraction studies of oriented uranium dioxide crystals under strong pulsed magnetic fields. In the antiferromagnetic state a [888] Bragg diffraction peak follows the bulk magnetostriction that expands under magnetic fields. Upon reversal of the field the expansion turns to contraction, before the [888] peak follows the switching effect and piezomagnetic ‘butterfly’ behaviour, characteristic of two structures connected by time reversal symmetry. An unexpected splitting of the [888] peak is observed, indicating the simultaneous presence of time-reversed domains of the 3-k structure and a complex magnetic-field-induced evolution of the microstructure. These findings open the door for a microscopic understanding of the piezomagnetism and magnetic coupling across strong magneto-elastic interactions.

36 MATERIALS SCIENCE↗

Gallium Oxide Heterojunction Diodes for 400 °C High‐Temperature Applications

β ‐Ga 2 O 3 ‐based semiconductor devices are expected to have significantly improved high‐power and high‐temperature performance due to its ultrawide bandgap of close to 5 eV. However, the high‐temperature operation of these ultrawide‐bandgap devices is usually limited by the relatively low 1–2 eV built‐in potential at the Schottky barrier with most high‐work‐function metals. Herein, heterojunction p ‐NiO/n‐ β ‐Ga 2 O 3 diodes fabrication and optimization for high‐temperature device applications are reported, demonstrating a current rectification ratio ( I ON / I OFF ) of more than 10 6 at 410 °C. The NiO heterojunction diode can achieve higher turn‐on ( V ON ) voltage and lower reverse leakage current compared to the Ni‐based Schottky diode fabricated on the same single‐crystal β ‐Ga 2 O 3 substrate, despite charge transport dominated by interfacial recombination. Electrical characterization and device modeling show that these advantages are due to a higher built‐in potential and additional band offset. These results suggest that heterojunction p–n diodes based on β ‐Ga 2 O 3 can significantly improve high‐temperature electronic device and sensor performance.

Sohel, Shahadat H.↗